专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明申请

US20100193915A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD, AND SEMICONDUCTOR DEVICE 失效
标题翻译：等离子体处理装置和等离子体处理方法以及半导体器件
公开(公告)号：US20100193915A1
公开(公告)日：2010-08-05
申请号：US12676526
申请日：2008-09-02
申请人： Katsushi Kishimoto , Yusuke Fukuoka
发明人： Katsushi Kishimoto , Yusuke Fukuoka
IPC分类号： H01L29/30 , C23C16/00 , H01L21/203
CPC分类号： C23C16/4412 , C23C16/45502 , C23C16/509 , H01J37/32091 , H01J37/3244 , H01J37/32449 , H01J37/32724 , H01J37/32834 , H01L21/02532 , H01L21/0262
摘要： In a chamber of a plasma processing apparatus, a cathode electrode and an anode electrode are disposed at a distance from each other. The cathode electrode is supplied with electric power from an electric power supply portion. The anode electrode is electrically grounded and a substrate is placed thereon. The anode electrode contains a heater. In an upper wall portion of the chamber, an exhaust port is provided and connected to a vacuum pump through an exhaust pipe. In a lower wall portion of a wall surface of the chamber, a gas introduction port is provided. A gas supply portion is provided outside the chamber.
摘要翻译：在等离子体处理装置的室中，阴极电极和阳极电极彼此间隔开设置。阴极由电力供给部供给电力。阳极电极接地，衬底放置在其上。阳极电极包含加热器。在室的上壁部分中，设置排气口并通过排气管与真空泵连接。在室的壁面的下壁部分设置有气体导入口。气体供给部设置在室外。

12. 发明申请

US20100034624A1 SUBSTRATE TRANSFER APPARATUS AND SUBSTRATE TRANSFER METHOD 有权
标题翻译：基板传输装置和基板传输方法
公开(公告)号：US20100034624A1
公开(公告)日：2010-02-11
申请号：US12536912
申请日：2009-08-06
申请人： Katsushi KISHIMOTO , Yusuke FUKUOKA , Noriyoshi KOHAMA , Yusuke OZAKI
发明人： Katsushi KISHIMOTO , Yusuke FUKUOKA , Noriyoshi KOHAMA , Yusuke OZAKI
IPC分类号： H01L21/673
CPC分类号： H01L21/67784 , H01L21/67748
摘要： A substrate transfer apparatus comprising: a plurality of floating-transfer guide plates adjacent to each other, each of guide plates having a plurality of floating gas ejecting holes; a gas supplying source; a tray to mount a substrate to be transferred, and that is floated by the floating gas; and a transfer arm for transferring the floated tray from the guide plate to the adjacent other guide plate, wherein the tray includes both side edges, and a contact/engagement portion formed at the respective both side edges for the transfer arm, each of the transfer arms including a base portion that can horizontally reciprocate along a rail provided so as to be parallel to the transfer direction, a guide portion provided to the base portion, that can horizontally reciprocate in a direction orthogonal to the transfer direction, and an arm portion provided to the guide portion, that can horizontally reciprocate in the direction parallel to the transfer direction.
摘要翻译：一种基板传送装置，包括：彼此相邻的多个浮动传送导向板，每个导板具有多个浮动气体喷射孔; 气体供应源; 用于安装待转移的基板并由浮动气体浮动的托盘; 以及用于将浮托盘从引导板传送到相邻的另一个引导板的传送臂，其中托盘包括两个侧边缘，以及形成在传送臂的相应两个侧边缘处的接触/接合部分，每个传送包括可沿着设置成平行于传送方向的轨道水平往复运动的基部的臂，设置在基部上的引导部，该引导部能够沿与传送方向正交的方向水平往复运动;以及臂部，导向部分能够沿平行于传送方向的方向水平往复运动。

13. 发明申请

US20100034622A1 SUBSTRATE TRANSFER APPARATUS 审中-公开
标题翻译：基板传送装置
公开(公告)号：US20100034622A1
公开(公告)日：2010-02-11
申请号：US12535230
申请日：2009-08-04
申请人： Katsushi Kishimoto , Yusuke Fukuoka , Hiroyuki Tadokoro , Yusuke Ozaki
发明人： Katsushi Kishimoto , Yusuke Fukuoka , Hiroyuki Tadokoro , Yusuke Ozaki
IPC分类号： H01L21/673
CPC分类号： H01L21/67748 , H01L21/67784
摘要： A substrate transfer apparatus comprising: a plurality of floating-transfer guide plates adjacent to each other with a space therebetween, each of the guide plates having a substrate-placing surface on which a substrate is to be placed, and a plurality of floating-gas ejecting holes for floating the substrate with use of a gas; a gas supplying source for supplying the floating gas to the respective guide plates; and an arm for transferring the floated substrate from the guide plate, from which the substrate is to be transferred, to the adjacent guide plate to which the substrate is to be transferred, wherein the substrate-placing surface of the guide plate to which the substrate is to be transferred is situated lower than the substrate-placing surface of the guide plate from which the substrate is to be transferred.
摘要翻译：一种基板传送装置，包括：彼此相邻的多个浮动传送导向板，其间具有空间，每个导板具有其上将放置基板的基板放置表面，以及多个浮动导体排出用于使用气体漂浮基板的孔; 气体供给源，用于将浮动气体供给到各个导向板; 以及用于将浮动的基板从基板被转印的导向板传送到要被转印的基板的相邻引导板的臂，其中基板的基板放置表面与基板要被转印的位置低于从基板被转印的导向板的基板放置表面。

14. 发明申请

US20100024872A1 SEMICONDUCTOR LAYER MANUFACTURING METHOD, SEMICONDUCTOR LAYER MANUFACTURING APPARATUS, AND SEMICONDUCTOR DEVICE MANUFACTURED USING SUCH METHOD AND APPARATUS 失效
标题翻译：半导体层制造方法，半导体层制造装置和使用这种方法和装置制造的半导体器件
公开(公告)号：US20100024872A1
公开(公告)日：2010-02-04
申请号：US12521080
申请日：2007-12-05
申请人： Katsushi Kishimoto , Yusuke Fukuoka
发明人： Katsushi Kishimoto , Yusuke Fukuoka
IPC分类号： H01L31/075 , H01L21/20 , H01L31/0352 , B05C11/115
CPC分类号： H01L21/02661 , C23C16/4408 , C23C16/45557 , H01L21/02532 , H01L21/02573 , H01L21/02592 , H01L21/02595 , H01L21/0262 , H01L31/0747 , H01L31/075 , H01L31/1804 , H01L31/1816 , H01L31/202 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： Provided are a semiconductor layer manufacturing method and a semiconductor manufacturing apparatus capable of forming a high quality semiconductor layer even by a single chamber system, with a shortened process time required for reducing a concentration of impurities that exist in a reaction chamber before forming the semiconductor layer. A semiconductor device manufactured using such a method and apparatus is also provided. The present invention relates to a semiconductor layer manufacturing method of forming a semiconductor layer inside a reaction chamber (101) capable of being hermetically sealed, including an impurities removing step of removing impurities inside the reaction chamber (101) using a replacement gas, and a semiconductor layer forming step of forming the semiconductor layer, the impurities removing step being a step in which a cycle composed of a replacement gas introducing step of introducing the replacement gas into the reaction chamber (101) and an exhausting step of exhausting the replacement gas is repeated a plurality of times, the impurities removing step being performed at least before the semiconductor layer forming step.
摘要翻译：提供了即使通过单室系统也能形成高质量半导体层的半导体层制造方法和半导体制造装置，在形成半导体层之前缩短反应室中存在的杂质浓度所需的缩短处理时间。还提供了使用这种方法和装置制造的半导体器件。本发明涉及一种半导体层制造方法，该半导体层制造方法在能够被气密密封的反应室（101）内部形成半导体层，其包括使用替换气体除去反应室（101）内的杂质的杂质除去步骤，以及形成半导体层的半导体层形成步骤，杂质除去步骤是将置换气体引入步骤构成的循环，将置换气体引入反应室（101）的排气步骤和排出置换气体的排气步骤的步骤是重复多次，至少在半导体层形成步骤之前进行杂质去除步骤。

15. 发明申请

US20070137570A1 Semiconductor manufacturing apparatus and semiconductor manufacturing method using the same 有权
标题翻译：半导体制造装置及使用其的半导体制造方法
公开(公告)号：US20070137570A1
公开(公告)日：2007-06-21
申请号：US10585858
申请日：2005-01-28
申请人： Yusuke Fukuoka , Katsushi Kishimo
发明人： Yusuke Fukuoka , Katsushi Kishimo
IPC分类号： C23C16/00 , B65H1/00
CPC分类号： H01L21/67748 , B65G49/061 , B65G49/065 , B65G2249/02 , B65G2249/04 , H01L21/67784 , Y10S414/135
摘要： A semiconductor manufacturing apparatus comprising: a plurality of vacuum chambers corresponding to a plurality of processing sections necessary for manufacturing a semiconductor device; an exhaust device connected to each vacuum chamber; a plate shaped guide plate arranged at the bottom of each vacuum chamber and having a plurality of gas emission holes; and a gas supply source for supplying gas to the gas emission holes, wherein the plurality of vacuum chambers are adjacent to each other by way of a shutter, one of the two adjacent vacuum chambers includes a tray mounted on the guide plate for mounting a substrate to be performed with a predetermined process, a conveying function section having a conveying arm for moving the tray from one vacuum chamber to the other vacuum chamber along the guide plate, and a controlling function section, the controlling function section performing the control so as to open the shutter to communicate the two adjacent vacuum chambers, emit gas from the gas emission holes of the guide plate of the vacuum chambers, and move the tray in one vacuum chamber, which is floated by the emitted gas, from the guide plate of one vacuum chamber to the guide plate of the other vacuum chamber along the guide plate by means of the conveying arm.
摘要翻译：一种半导体制造装置，包括：对应于制造半导体器件所需的多个处理部的多个真空室; 连接到每个真空室的排气装置; 布置在每个真空室的底部并具有多个排气孔的板状引导板; 以及用于向气体排出孔提供气体的气体供应源，其中所述多个真空室通过快门彼此相邻，所述两个相邻的真空室中的一个包括安装在所述导板上用于安装基板的托盘要执行预定的处理，具有用于将托盘从一个真空室移动到另一个真空室的输送臂的输送功能部分和控制功能部分，该控制功能部分执行控制以便打开快门以连通两个相邻的真空室，从真空室的引导板的气体排放孔中排放气体，并将托盘从一个由所发射的气体浮起的一个真空室中从一个真空室通过输送臂沿着引导板连接到另一个真空室的引导板。

16. 发明授权

US06979589B2 Silicon-based thin-film photoelectric conversion device and method of manufacturing thereof 失效
标题翻译：硅系薄膜光电转换装置及其制造方法
公开(公告)号：US06979589B2
公开(公告)日：2005-12-27
申请号：US10942958
申请日：2004-09-17
申请人： Katsushi Kishimoto , Yusuke Fukuoka , Katsuhiko Nomoto
发明人： Katsushi Kishimoto , Yusuke Fukuoka , Katsuhiko Nomoto
IPC分类号： H01L31/04 , H01L21/00 , H01L31/075 , H01L31/18
CPC分类号： H01L31/077 , H01L31/1824 , Y02E10/545 , Y02P70/521
摘要： An excellent silicon-based thin-film photoelectric conversion device is manufactured simply and efficiently at a low cost. Specifically, a method of manufacturing the silicon-based thin-film photoelectric conversion device including a p-type semiconductor layer, an i-type microcrystalline silicon-based photoelectric conversion layer and an n-type semiconductor layer deposited by plasma CVD includes the steps of: successively depositing the p-type semiconductor layer, the i-type microcrystalline silicon-based photoelectric conversion layer and the n-type semiconductor layer on a substrate within the same plasma CVD film deposition chamber; transferring the substrate out of the film deposition chamber; and subsequently to the step of depositing the p-type semiconductor layer, the i-type microcrystalline silicon-based photoelectric conversion layer and the n-type semiconductor layer, eliminating influences of remaining n-type impurities on a cathode and/or within the film deposition chamber.
摘要翻译：以低成本简单高效地制造出优异的硅系薄膜光电转换元件。具体而言，包括通过等离子体CVD沉积的p型半导体层，i型微晶硅系光电转换层和n型半导体层的硅基薄膜光电转换装置的制造方法包括以下步骤：：在相同的等离子体CVD膜沉积室内的基板上依次沉积p型半导体层，i型微晶硅基光电转换层和n型半导体层; 将所述衬底转移到所述成膜室内; 并且随后沉积p型半导体层，i型微晶硅基光电转换层和n型半导体层的步骤，消除了残留的n型杂质对阴极和/或膜内的影响沉积室。

17. 发明公开

US20230334803A1 IMAGE PROCESSING METHOD, RECORDING MEDIUM, AND IMAGE PROCESSING SYSTEM 审中-公开
公开(公告)号：US20230334803A1
公开(公告)日：2023-10-19
申请号：US18024288
申请日：2021-10-14
申请人： Makoto ODAMAKI , Hiroshi SUITOH , Yusuke FUKUOKA
发明人： Makoto ODAMAKI , Hiroshi SUITOH , Yusuke FUKUOKA
IPC分类号： G06T19/20 , G06T7/70 , G06V10/764 , G06T7/60
CPC分类号： G06T19/20 , G06T7/70 , G06V10/764 , G06T7/60 , G06T2219/2012 , G06T2207/20212 , G06T2210/04 , G06T2219/2004
摘要： An image processing method to be executed by an image processing system includes: estimating a structure of a space inside a construction from a background image in which the space is imaged in all directions; estimating a region in which a virtual object is allowed to be arranged in the space based on the estimated structure; and combining the virtual object with the background image in the estimated region.

18. 发明授权

US08395250B2 Plasma processing apparatus with an exhaust port above the substrate 失效
标题翻译：在衬底上方具有排气口的等离子体处理装置
公开(公告)号：US08395250B2
公开(公告)日：2013-03-12
申请号：US12676526
申请日：2008-09-02
申请人： Katsushi Kishimoto , Yusuke Fukuoka
发明人： Katsushi Kishimoto , Yusuke Fukuoka
IPC分类号： H01L23/20 , H01L21/302 , C23C16/50 , H05H1/24
CPC分类号： C23C16/4412 , C23C16/45502 , C23C16/509 , H01J37/32091 , H01J37/3244 , H01J37/32449 , H01J37/32724 , H01J37/32834 , H01L21/02532 , H01L21/0262
摘要： In a chamber of a plasma processing apparatus, a cathode electrode and an anode electrode are disposed at a distance from each other. The cathode electrode is supplied with electric power from an electric power supply portion. The anode electrode is electrically grounded and a substrate is placed thereon. The anode electrode contains a heater. In an upper wall portion of the chamber, an exhaust port is provided and connected to a vacuum pump through an exhaust pipe. In a lower wall portion of a wall surface of the chamber, a gas introduction port is provided. A gas supply portion is provided outside the chamber.
摘要翻译：在等离子体处理装置的室中，阴极电极和阳极电极彼此间隔开设置。阴极由电力供给部供给电力。阳极电极接地，衬底放置在其上。阳极电极包含加热器。在室的上壁部分中，设置排气口并通过排气管与真空泵连接。在室的壁面的下壁部分设置有气体导入口。气体供给部设置在室外。

19. 发明授权

US08093142B2 Plasma processing apparatus and plasma processing method 有权
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US08093142B2
公开(公告)日：2012-01-10
申请号：US12094816
申请日：2006-11-16
申请人： Yusuke Fukuoka , Katsushi Kishimoto
发明人： Yusuke Fukuoka , Katsushi Kishimoto
IPC分类号： H01L21/00 , C23C16/00
CPC分类号： H01J37/32541 , H01J37/32091 , H01J37/32568
摘要： There is provided a plasma processing device capable of forming a film in a favorable manner irrespective of deflection generated in an anode electrode and a cathode electrode in the case where an area of the electrodes is increased.A plasma processing device 100 includes a chamber 15, a gas introducing portion 28, an exhaust unit 29, and a high-frequency power supply unit 30. In the chamber 15, there are provided an anode electrode (first electrode) 4 having a flat-plate shape, a cathode electrode (second electrode) 12 having a flat-plate shape, and first supporting members 6 and second supporting members 5 for slidably supporting the two electrodes 4 and 12 in parallel with each other. The cathode electrode 12 is provided so as to face the anode electrode 4. The anode electrode 4 and the cathode electrode 12 are not fixed with screws or the like but are merely placed on the first supporting members 6 and the second supporting members 5. In the anode electrode 4 and the cathode electrode 12, deflection amounts when they are freely deflected under their own weights are equal to each other, and maximum deflection amounts of the two electrodes 4 and 12 are also equal to each other.
摘要翻译：提供一种等离子体处理装置，其能够在电极面积增加的情况下以与阳极电极和阴极电极中产生的偏转无关地以良好的方式形成膜。等离子体处理装置100包括室15，气体引入部28，排气单元29和高频电源单元30.在室15中，设置有具有平坦的阳极电极板状，具有平板形状的阴极电极（第二电极）12以及用于彼此平行地可滑动地支撑两个电极4和12的第一支撑构件6和第二支撑构件5。阴极电极12设置成与阳极电极4相对。阳极电极4和阴极电极12不用螺钉等固定，而仅仅放置在第一支撑构件6和第二支撑构件5上。阳极电极4和阴极电极12在它们自重地自由偏转时的偏转量彼此相等，并且两个电极4和12的最大偏转量也彼此相等。

20. 发明申请

US20110283623A1 VACUUM DEVICE 审中-公开
标题翻译：真空装置
公开(公告)号：US20110283623A1
公开(公告)日：2011-11-24
申请号：US13147466
申请日：2010-02-05
申请人： Yusuke Ozaki , Katsushi Kishimoto , Nobuyuki Tanigawa , Yusuke Fukuoka
发明人： Yusuke Ozaki , Katsushi Kishimoto , Nobuyuki Tanigawa , Yusuke Fukuoka
IPC分类号： E06B3/46 , E05F11/54 , E05D15/06
CPC分类号： C23C14/564
摘要： A vacuum chamber has an opening. A door is to close the opening. A first rail extends in a first direction with a space between the first rail and the opening when viewed in a planar view. Further, the first rail supports the door to be movable in the first direction. Further, the first rail has a portion facing the opening in a second direction crossing the first direction when viewed in a planar view. Furthermore, the first rail has a first movable portion movable in the second direction.
摘要翻译：真空室具有开口。门是关闭开口。当在平面视图中观察时，第一轨道在第一方向上延伸有第一轨道和开口之间的空间。此外，第一轨道支撑门能够沿第一方向移动。此外，当从平面视图观察时，第一轨道具有与第一方向交叉的第二方向上面向开口的部分。此外，第一轨道具有可沿第二方向移动的第一可移动部分。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式