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1. 发明申请

US20100034622A1 SUBSTRATE TRANSFER APPARATUS 审中-公开
标题翻译：基板传送装置
公开(公告)号：US20100034622A1
公开(公告)日：2010-02-11
申请号：US12535230
申请日：2009-08-04
申请人： Katsushi Kishimoto , Yusuke Fukuoka , Hiroyuki Tadokoro , Yusuke Ozaki
发明人： Katsushi Kishimoto , Yusuke Fukuoka , Hiroyuki Tadokoro , Yusuke Ozaki
IPC分类号： H01L21/673
CPC分类号： H01L21/67748 , H01L21/67784
摘要： A substrate transfer apparatus comprising: a plurality of floating-transfer guide plates adjacent to each other with a space therebetween, each of the guide plates having a substrate-placing surface on which a substrate is to be placed, and a plurality of floating-gas ejecting holes for floating the substrate with use of a gas; a gas supplying source for supplying the floating gas to the respective guide plates; and an arm for transferring the floated substrate from the guide plate, from which the substrate is to be transferred, to the adjacent guide plate to which the substrate is to be transferred, wherein the substrate-placing surface of the guide plate to which the substrate is to be transferred is situated lower than the substrate-placing surface of the guide plate from which the substrate is to be transferred.
摘要翻译：一种基板传送装置，包括：彼此相邻的多个浮动传送导向板，其间具有空间，每个导板具有其上将放置基板的基板放置表面，以及多个浮动导体排出用于使用气体漂浮基板的孔; 气体供给源，用于将浮动气体供给到各个导向板; 以及用于将浮动的基板从基板被转印的导向板传送到要被转印的基板的相邻引导板的臂，其中基板的基板放置表面与基板要被转印的位置低于从基板被转印的导向板的基板放置表面。

2. 发明申请

US20100012037A1 SUBSTRATE TRANSFER APPARATUS 审中-公开
标题翻译：基板传送装置
公开(公告)号：US20100012037A1
公开(公告)日：2010-01-21
申请号：US12503167
申请日：2009-07-15
申请人： Katsushi Kishimoto , Yusuke Fukuoka , Mitsuhiro Toyoda , Hiroyuki Tadokoro , Yusuke Ozaki
发明人： Katsushi Kishimoto , Yusuke Fukuoka , Mitsuhiro Toyoda , Hiroyuki Tadokoro , Yusuke Ozaki
IPC分类号： C23C16/54 , C23C16/513
CPC分类号： H01L21/67784
摘要： A substrate transfer apparatus comprising: a plurality of floating-transfer guide plates adjacent to each other with a space, each of guide plate having a plurality of floating gas ejecting holes; a gas supplying source for supplying a floating gas to the guide plates; a tray that is placed on one of the guide plates in order to mount a substrate to be transferred, and that is floated by the floating gas; and a transfer arm for transferring the floated tray to the adjacent other guide plate from the guide plate, wherein the tray includes a main body portion having both side edges parallel to a transfer direction of the tray, and an outward projecting portion that is formed so as to partially project outwardly from at least one of both side edges of the main body portion, and wherein the transfer arm is in contact and engaged with the outward projecting portion when the tray is transferred by the transfer arm.
摘要翻译：一种基板传送装置，包括：多个彼此相邻的浮动传送导向板，具有空间，每个导板具有多个浮动气体喷射孔; 用于将浮动气体供给到所述引导板的气体供给源; 托盘，其放置在一个导板上，以便安装待转印的基板，并由浮动气体漂浮; 以及用于将浮托盘从引导板传送到相邻的其他引导板的传送臂，其中托盘包括具有平行于托盘的传送方向的两个侧边缘的主体部分和形成为这样的向外突出部分从主体部分的两个侧边缘的至少一个边缘部分地向外突出，并且当托盘由传送臂传送时，传送臂与外伸部分接触并接合。

3. 发明申请

US20120219390A1 SUBSTRATE TRANSFER APPARATUS 审中-公开
标题翻译：基板传送装置
公开(公告)号：US20120219390A1
公开(公告)日：2012-08-30
申请号：US13462908
申请日：2012-05-03
申请人： Katsushi Kishimoto , Yusuke Fukuoka , Hiroyuki Tadokoro , Yusuke Ozaki
发明人： Katsushi Kishimoto , Yusuke Fukuoka , Hiroyuki Tadokoro , Yusuke Ozaki
IPC分类号： B65G65/00
CPC分类号： H01L21/67748 , H01L21/67784
摘要： A substrate transfer apparatus comprising: a plurality of floating-transfer guide plates adjacent to each other with a space therebetween, each of the guide plates having a substrate-placing surface on which a substrate is to be placed, and a plurality of floating-gas ejecting holes for floating the substrate with use of a gas; a gas supplying source for supplying the floating gas to the respective guide plates; and an arm for transferring the floated substrate from the guide plate, from which the substrate is to be transferred, to the adjacent guide plate to which the substrate is to be transferred, wherein the substrate-placing surface of the guide plate to which the substrate is to be transferred is situated lower than the substrate-placing surface of the guide plate from which the substrate is to be transferred.
摘要翻译：一种基板传送装置，包括：彼此相邻的多个浮动传送导向板，其间具有空间，每个导板具有其上将放置基板的基板放置表面，以及多个浮动导电板排出用于使用气体漂浮基板的孔; 气体供给源，用于将浮动气体供给到各个导向板; 以及用于将浮动的基板从基板被转印的导向板传送到要被转印的基板的相邻引导板的臂，其中基板的基板放置表面与基板要被转印的位置低于从基板被转印的导向板的基板放置表面。

4. 发明授权

US08137046B2 Substrate transfer apparatus and substrate transfer method 有权
标题翻译：基板转印装置和基板转印方法
公开(公告)号：US08137046B2
公开(公告)日：2012-03-20
申请号：US12536912
申请日：2009-08-06
申请人： Katsushi Kishimoto , Yusuke Fukuoka , Noriyoshi Kohama , Yusuke Ozaki
发明人： Katsushi Kishimoto , Yusuke Fukuoka , Noriyoshi Kohama , Yusuke Ozaki
IPC分类号： B65G35/00
CPC分类号： H01L21/67784 , H01L21/67748
摘要： A substrate transfer apparatus comprising: a plurality of floating-transfer guide plates adjacent to each other, each of guide plates having a plurality of floating gas ejecting holes; a gas supplying source; a tray to mount a substrate to be transferred, and that is floated by the floating gas; and a transfer arm for transferring the floated tray from the guide plate to the adjacent other guide plate, wherein the tray includes both side edges, and a contact/engagement portion formed at the respective both side edges for the transfer arm, each of the transfer arms including a base portion that can horizontally reciprocate along a rail provided so as to be parallel to the transfer direction, a guide portion provided to the base portion, that can horizontally reciprocate in a direction orthogonal to the transfer direction, and an arm portion provided to the guide portion, that can horizontally reciprocate in the direction parallel to the transfer direction.
摘要翻译：一种基板传送装置，包括：彼此相邻的多个浮动传送导向板，每个导板具有多个浮动气体喷射孔; 气体供应源; 用于安装待转移的基板并由浮动气体浮动的托盘; 以及用于将浮托盘从引导板传送到相邻的另一个引导板的传送臂，其中托盘包括两个侧边缘，以及形成在传送臂的相应两个侧边缘处的接触/接合部分，每个传送包括可沿着设置成平行于传送方向的轨道水平往复运动的基部的臂，设置在基部上的引导部，该引导部能够沿与传送方向正交的方向水平往复运动;以及臂部，导向部分能够沿平行于传送方向的方向水平往复运动。

5. 发明申请

US20110283623A1 VACUUM DEVICE 审中-公开
标题翻译：真空装置
公开(公告)号：US20110283623A1
公开(公告)日：2011-11-24
申请号：US13147466
申请日：2010-02-05
申请人： Yusuke Ozaki , Katsushi Kishimoto , Nobuyuki Tanigawa , Yusuke Fukuoka
发明人： Yusuke Ozaki , Katsushi Kishimoto , Nobuyuki Tanigawa , Yusuke Fukuoka
IPC分类号： E06B3/46 , E05F11/54 , E05D15/06
CPC分类号： C23C14/564
摘要： A vacuum chamber has an opening. A door is to close the opening. A first rail extends in a first direction with a space between the first rail and the opening when viewed in a planar view. Further, the first rail supports the door to be movable in the first direction. Further, the first rail has a portion facing the opening in a second direction crossing the first direction when viewed in a planar view. Furthermore, the first rail has a first movable portion movable in the second direction.
摘要翻译：真空室具有开口。门是关闭开口。当在平面视图中观察时，第一轨道在第一方向上延伸有第一轨道和开口之间的空间。此外，第一轨道支撑门能够沿第一方向移动。此外，当从平面视图观察时，第一轨道具有与第一方向交叉的第二方向上面向开口的部分。此外，第一轨道具有可沿第二方向移动的第一可移动部分。

6. 发明申请

US20120155994A1 VACUUM PROCESSING DEVICE AND VACUUM PROCESSING FACTORY 审中-公开
标题翻译：真空加工设备和真空加工设备
公开(公告)号：US20120155994A1
公开(公告)日：2012-06-21
申请号：US13391886
申请日：2010-08-23
申请人： Katsushi Kishimoto , Yusuke Fukuoka
发明人： Katsushi Kishimoto , Yusuke Fukuoka
IPC分类号： H01L21/677
CPC分类号： H01L21/67724 , C23C16/54 , H01L21/6719 , H01L21/6773 , H01L21/67736 , H01L21/67775
摘要： A vacuum processing device includes a first processing chamber for housing a workpiece and performing vacuum processing on the workpiece, an evacuatable second processing chamber for housing a workpiece to be vacuum-processed and a workpiece having been vacuum-processed, a gate unit provided between the first and second processing chambers so that the gate unit is attachable to and detachable from the first processing chamber, a transport device for loading the workpiece to be vacuum-processed from a loading unit to a vacuum processing unit through the gate unit, and unloading the workpiece having been vacuum-processed from the vacuum processing unit to an unloading unit through the gate unit, and a movement mechanism for separating the first and second processing chambers from each other.
摘要翻译：真空处理装置包括：用于容纳工件并对工件进行真空处理的第一处理室，用于容纳要被真空处理的工件的可抽空的第二处理室和被真空处理的工件; 第一处理室和第二处理室，使得门单元可附接到第一处理室和可从第一处理室拆卸;传送装置，用于通过门单元将从加载单元被真空处理的工件装载到真空处理单元，工件已经从真空处理单元被真空处理到通过门单元的卸载单元，以及用于将第一和第二处理室彼此分离的移动机构。

7. 发明申请

US20110312167A1 PLASMA PROCESSING APPARATUS, AND DEPOSITION METHOD AN ETCHING METHOD USING THE PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：等离子体处理装置和使用等离子体处理装置的蚀刻方法的沉积方法
公开(公告)号：US20110312167A1
公开(公告)日：2011-12-22
申请号：US12995579
申请日：2009-05-28
申请人： Katsushi Kishimoto , Yusuke Fukuoka , Nobuyuki Tanigawa
发明人： Katsushi Kishimoto , Yusuke Fukuoka , Nobuyuki Tanigawa
IPC分类号： H01L21/205 , H01L21/3065 , C23C16/50
CPC分类号： H01J37/32568 , C23C16/509 , H01J37/32091
摘要： A plasma processing apparatus, comprising: a reaction chamber; a plurality of discharge portions each made up of a pair of a first electrode and a second electrode disposed inside the reaction chamber so as to oppose to each other and to cause a plasma discharge under an atmosphere of a reactant gas; and a dummy electrode, wherein a plurality of the first electrodes are connected to a power supply portion, a plurality of the second electrodes are grounded, and the dummy electrode is disposed so as to oppose to an outer surface side of an external first electrode in terms of a parallel direction out of the plurality of the first electrodes which are disposed in the parallel direction, and is grounded.
摘要翻译：一种等离子体处理装置，包括：反应室; 多个放电部分，每个由一对第一电极和第二电极构成，设置在反应室内部以彼此相对，并在反应气体的气氛下引起等离子体放电; 和虚拟电极，其中多个所述第一电极连接到电源部分，多个所述第二电极接地，并且所述虚拟电极被设置为与所述外部第一电极的外表面侧相对并排设置在平行方向上的多个第一电极中的并联方向的接地。

8. 发明申请

US20100193915A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD, AND SEMICONDUCTOR DEVICE 失效
标题翻译：等离子体处理装置和等离子体处理方法以及半导体器件
公开(公告)号：US20100193915A1
公开(公告)日：2010-08-05
申请号：US12676526
申请日：2008-09-02
申请人： Katsushi Kishimoto , Yusuke Fukuoka
发明人： Katsushi Kishimoto , Yusuke Fukuoka
IPC分类号： H01L29/30 , C23C16/00 , H01L21/203
CPC分类号： C23C16/4412 , C23C16/45502 , C23C16/509 , H01J37/32091 , H01J37/3244 , H01J37/32449 , H01J37/32724 , H01J37/32834 , H01L21/02532 , H01L21/0262
摘要： In a chamber of a plasma processing apparatus, a cathode electrode and an anode electrode are disposed at a distance from each other. The cathode electrode is supplied with electric power from an electric power supply portion. The anode electrode is electrically grounded and a substrate is placed thereon. The anode electrode contains a heater. In an upper wall portion of the chamber, an exhaust port is provided and connected to a vacuum pump through an exhaust pipe. In a lower wall portion of a wall surface of the chamber, a gas introduction port is provided. A gas supply portion is provided outside the chamber.
摘要翻译：在等离子体处理装置的室中，阴极电极和阳极电极彼此间隔开设置。阴极由电力供给部供给电力。阳极电极接地，衬底放置在其上。阳极电极包含加热器。在室的上壁部分中，设置排气口并通过排气管与真空泵连接。在室的壁面的下壁部分设置有气体导入口。气体供给部设置在室外。

9. 发明申请

US20100024872A1 SEMICONDUCTOR LAYER MANUFACTURING METHOD, SEMICONDUCTOR LAYER MANUFACTURING APPARATUS, AND SEMICONDUCTOR DEVICE MANUFACTURED USING SUCH METHOD AND APPARATUS 失效
标题翻译：半导体层制造方法，半导体层制造装置和使用这种方法和装置制造的半导体器件
公开(公告)号：US20100024872A1
公开(公告)日：2010-02-04
申请号：US12521080
申请日：2007-12-05
申请人： Katsushi Kishimoto , Yusuke Fukuoka
发明人： Katsushi Kishimoto , Yusuke Fukuoka
IPC分类号： H01L31/075 , H01L21/20 , H01L31/0352 , B05C11/115
CPC分类号： H01L21/02661 , C23C16/4408 , C23C16/45557 , H01L21/02532 , H01L21/02573 , H01L21/02592 , H01L21/02595 , H01L21/0262 , H01L31/0747 , H01L31/075 , H01L31/1804 , H01L31/1816 , H01L31/202 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： Provided are a semiconductor layer manufacturing method and a semiconductor manufacturing apparatus capable of forming a high quality semiconductor layer even by a single chamber system, with a shortened process time required for reducing a concentration of impurities that exist in a reaction chamber before forming the semiconductor layer. A semiconductor device manufactured using such a method and apparatus is also provided. The present invention relates to a semiconductor layer manufacturing method of forming a semiconductor layer inside a reaction chamber (101) capable of being hermetically sealed, including an impurities removing step of removing impurities inside the reaction chamber (101) using a replacement gas, and a semiconductor layer forming step of forming the semiconductor layer, the impurities removing step being a step in which a cycle composed of a replacement gas introducing step of introducing the replacement gas into the reaction chamber (101) and an exhausting step of exhausting the replacement gas is repeated a plurality of times, the impurities removing step being performed at least before the semiconductor layer forming step.
摘要翻译：提供了即使通过单室系统也能形成高质量半导体层的半导体层制造方法和半导体制造装置，在形成半导体层之前缩短反应室中存在的杂质浓度所需的缩短处理时间。还提供了使用这种方法和装置制造的半导体器件。本发明涉及一种半导体层制造方法，该半导体层制造方法在能够被气密密封的反应室（101）内部形成半导体层，其包括使用替换气体除去反应室（101）内的杂质的杂质除去步骤，以及形成半导体层的半导体层形成步骤，杂质除去步骤是将置换气体引入步骤构成的循环，将置换气体引入反应室（101）的排气步骤和排出置换气体的排气步骤的步骤是重复多次，至少在半导体层形成步骤之前进行杂质去除步骤。

10. 发明授权

US06979589B2 Silicon-based thin-film photoelectric conversion device and method of manufacturing thereof 失效
标题翻译：硅系薄膜光电转换装置及其制造方法
公开(公告)号：US06979589B2
公开(公告)日：2005-12-27
申请号：US10942958
申请日：2004-09-17
申请人： Katsushi Kishimoto , Yusuke Fukuoka , Katsuhiko Nomoto
发明人： Katsushi Kishimoto , Yusuke Fukuoka , Katsuhiko Nomoto
IPC分类号： H01L31/04 , H01L21/00 , H01L31/075 , H01L31/18
CPC分类号： H01L31/077 , H01L31/1824 , Y02E10/545 , Y02P70/521
摘要： An excellent silicon-based thin-film photoelectric conversion device is manufactured simply and efficiently at a low cost. Specifically, a method of manufacturing the silicon-based thin-film photoelectric conversion device including a p-type semiconductor layer, an i-type microcrystalline silicon-based photoelectric conversion layer and an n-type semiconductor layer deposited by plasma CVD includes the steps of: successively depositing the p-type semiconductor layer, the i-type microcrystalline silicon-based photoelectric conversion layer and the n-type semiconductor layer on a substrate within the same plasma CVD film deposition chamber; transferring the substrate out of the film deposition chamber; and subsequently to the step of depositing the p-type semiconductor layer, the i-type microcrystalline silicon-based photoelectric conversion layer and the n-type semiconductor layer, eliminating influences of remaining n-type impurities on a cathode and/or within the film deposition chamber.
摘要翻译：以低成本简单高效地制造出优异的硅系薄膜光电转换元件。具体而言，包括通过等离子体CVD沉积的p型半导体层，i型微晶硅系光电转换层和n型半导体层的硅基薄膜光电转换装置的制造方法包括以下步骤：：在相同的等离子体CVD膜沉积室内的基板上依次沉积p型半导体层，i型微晶硅基光电转换层和n型半导体层; 将所述衬底转移到所述成膜室内; 并且随后沉积p型半导体层，i型微晶硅基光电转换层和n型半导体层的步骤，消除了残留的n型杂质对阴极和/或膜内的影响沉积室。

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