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11. 发明申请

US20090278170A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090278170A1
公开(公告)日：2009-11-12
申请号：US12116231
申请日：2008-05-07
申请人： Yun-Chi Yang , Jih-Shun Chiang , Cheng-Li Lin , Ju-Ping Chen , Kuan-Cheng Su
发明人： Yun-Chi Yang , Jih-Shun Chiang , Cheng-Li Lin , Ju-Ping Chen , Kuan-Cheng Su
IPC分类号： H01L29/778 , H01L21/336
CPC分类号： H01L29/66636 , H01L21/28518 , H01L21/3148 , H01L29/456 , H01L29/665
摘要： A method for manufacturing a semiconductor device includes providing a substrate having at least a gate structure formed thereon, forming LDDs in the substrate respectively at two side of the gate structure and a spacer at sidewalls of the gate structure, forming a source/drain in the substrate at two side of the gate structure, performing ant etching process to form recesses respectively in the source/drain, forming a barrier layer in the recesses; and performing a salicide process.
摘要翻译：一种制造半导体器件的方法包括提供至少形成有栅极结构的衬底，分别在栅极结构的两侧在衬底中形成LDD，在栅极结构的侧壁形成间隔物，在栅极结构的侧壁形成源极/漏极基板在栅极结构的两侧，进行蚂蚁蚀刻处理以分别在源极/漏极中形成凹槽，在凹部中形成阻挡层; 并执行自杀过程。

12. 发明授权

US07341910B2 Method for forming a flash memory by using a microcrystalline polysilicon layer as a floating gate 有权
标题翻译：通过使用微晶多晶硅层作为浮动栅极形成闪速存储器的方法
公开(公告)号：US07341910B2
公开(公告)日：2008-03-11
申请号：US10192565
申请日：2002-07-11
申请人： Tzung-Ting Han , Chin-Ta Su , Yun-Chi Yang
发明人： Tzung-Ting Han , Chin-Ta Su , Yun-Chi Yang
IPC分类号： H01L21/336
CPC分类号： H01L29/4916 , H01L21/02532 , H01L21/02576 , H01L21/02595 , H01L21/0262 , H01L21/28273 , H01L29/42324
摘要： This invention provides a method for forming a microcrystalline polysilicon layer by using silane or dislane with introducing hydrogen gas. This microcrystalline polysilicon layer can be used as a floating gate of a flash memory to improve the character of the flash memory.
摘要翻译：本发明提供一种通过使用硅烷或二异氰酸酯引入氢气来形成微晶多晶硅层的方法。该微晶多晶硅层可以用作闪存的浮动栅极以改善闪存的特性。

13. 发明授权

US07199018B2 Plasma assisted pre-planarization process 有权
标题翻译：等离子体辅助预平面化过程
公开(公告)号：US07199018B2
公开(公告)日：2007-04-03
申请号：US10837528
申请日：2004-04-30
申请人： Yung-Tai Hung , Chun-Fu Chen , Yun-Chi Yang , Chin-Hsiang Lin , Chen-Wei Liao
发明人： Yung-Tai Hung , Chun-Fu Chen , Yun-Chi Yang , Chin-Hsiang Lin , Chen-Wei Liao
IPC分类号： H91L21/76
CPC分类号： H01L21/31116 , H01L21/31055 , H01L21/76224
摘要： The present invention is related to methods of processing a semiconductor device. A plasma vapor deposition process is used to fill a trench with an oxide layer, wherein sharp corners are formed by the oxide layer. A pre-planarization sputtering process is performed to reduce the oxide layer corner sharpness. A planarization process is performed using polishing.
摘要翻译：本发明涉及半导体器件的处理方法。使用等离子体气相沉积工艺来填充具有氧化物层的沟槽，其中通过氧化物层形成尖角。进行预平面化溅射工艺以减少氧化物层拐角锐度。使用抛光进行平坦化处理。

14. 发明申请

US20060205205A1 METHOD FOR IMPROVING THE PERFORMANCE OF FLASH MEMORY BY USING MICROCRYSTALLINE SILICON FILM AS A FLOATING GATE 有权
标题翻译：通过使用微晶硅膜作为浮动门来改善闪存的性能的方法
公开(公告)号：US20060205205A1
公开(公告)日：2006-09-14
申请号：US11422059
申请日：2006-06-02
申请人： TZUNG-TING HAN , CHIN-TA SU , YUN-CHI YANG
发明人： TZUNG-TING HAN , CHIN-TA SU , YUN-CHI YANG
IPC分类号： H01L21/4763
CPC分类号： H01L29/4916 , H01L21/02532 , H01L21/02576 , H01L21/02595 , H01L21/0262 , H01L21/28273 , H01L29/42324
摘要： This invention provides a method for forming polysilicon by using silane with introducing hydrogen, such that polysilicon is microcrystalline. This microcrystal polysilicon can be applied to floating gate of flash memory to improve the character of flash memory.
摘要翻译：本发明提供了一种通过使用硅烷引入氢来形成多晶硅的方法，使得多晶硅是微晶的。这种微晶多晶硅可以应用于闪存的浮动栅极，以提高闪存的性能。

15. 发明申请

US20050003668A1 Plasma assisted pre-planarization process 有权
标题翻译：等离子体辅助预平面化过程
公开(公告)号：US20050003668A1
公开(公告)日：2005-01-06
申请号：US10837528
申请日：2004-04-30
申请人： Yung-Tai Hung , Chun-Fu Chen , Yun-Chi Yang , Chin-Hsiang Lin , Chen-Wei Liao
发明人： Yung-Tai Hung , Chun-Fu Chen , Yun-Chi Yang , Chin-Hsiang Lin , Chen-Wei Liao
IPC分类号： H01L21/302 , H01L21/3105 , H01L21/311 , H01L21/762
CPC分类号： H01L21/31116 , H01L21/31055 , H01L21/76224
摘要： The present invention is related to methods of processing a semiconductor device. A plasma vapor deposition process is used to fill a trench with an oxide layer, wherein sharp corners are formed by the oxide layer. A pre-planarization sputtering process is performed to reduce the oxide layer corner sharpness. A planarization process is performed using polishing.
摘要翻译：本发明涉及半导体器件的处理方法。使用等离子体气相沉积工艺来填充具有氧化物层的沟槽，其中通过氧化物层形成尖角。进行预平面化溅射工艺以减少氧化物层拐角锐度。使用抛光进行平坦化处理。

16. 发明授权

US06790746B1 Method for improvement of edge breakdown caused by edge electrical field at a tunnel oxide of a high-density flash memory by a shielded bird's beak 有权
标题翻译：用于通过屏蔽的鸟嘴来改善高密度闪存的隧道氧化物边缘电场引起的边缘击穿的方法
公开(公告)号：US06790746B1
公开(公告)日：2004-09-14
申请号：US10630868
申请日：2003-07-31
申请人： Yun-Chi Yang
发明人： Yun-Chi Yang
IPC分类号： H01L2176
CPC分类号： H01L27/11521 , H01L21/28273 , H01L21/76235
摘要： To improve the edge breakdown caused by edge electrical field at the tunnel oxide of high-density flash memory, a bird's beak is formed at the edge of the active region of the flash memory to prevent the corner of the tunnel oxide layer formed later on the active region from being excessively sharp, which will result in localized intense electrical field, and further lead to breakdown caused by the edge electrical field.
摘要翻译：为了改善由高密度闪速存储器的隧道氧化物边缘电场引起的边缘击穿，在闪速存储器的有源区域的边缘处形成鸟嘴，以防止在之后形成的隧道氧化物层的拐角有源区域过于尖锐，这将导致局部强烈的电场，并进一步导致由边缘电场引起的击穿。

17. 发明授权

US06326220B1 Method for determining near-surface doping concentration 有权
标题翻译：确定近表面掺杂浓度的方法
公开(公告)号：US06326220B1
公开(公告)日：2001-12-04
申请号：US09710449
申请日：2000-11-11
申请人： Wei-Wen Chen , Yaw-Lin Hwang , Yun-Chi Yang
发明人： Wei-Wen Chen , Yaw-Lin Hwang , Yun-Chi Yang
IPC分类号： H01L2166
CPC分类号： H01L22/14
摘要： A method for determining near-surface doping concentration is provided by utilizing surface photovoltage. A monochromatic light pulse is applied to a semiconductor substrate. When the energy of the incident light is larger than the energy gap of the semiconductor substrate, the light is absorbed by the substrate and thereby generates enough charge carriers. The carriers diffuse to the surface of the substrate and result in lowering the surface barrier, and hence, cause a shift of the surface voltage. The difference of the surface voltages, before and after the light pulse applied, is measured by using a surface photovoltage probe. Then, the doping concentration near the surface of the substrate can be determined according to the difference of the surface voltage.
摘要翻译：通过利用表面光电压来提供确定近表面掺杂浓度的方法。将单色光脉冲施加到半导体衬底。当入射光的能量大于半导体衬底的能隙时，光被衬底吸收，从而产生足够的电荷载流子。载流子扩散到基板的表面，导致表面势垒降低，因此引起表面电压的偏移。通过使用表面光电压探测器来测量施加光脉冲之前和之后的表面电压的差异。然后，可以根据表面电压的差异来确定衬底表面附近的掺杂浓度。

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