专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明申请

US20160033398A1 SUBSTRATE TARGET FOR IN-SITU LITHOGRAPHY METROLOGY, METROLOGY METHOD FOR IN-SITU LITHOGRAPHY, AND METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE BY USING IN-SITU METROLOGY 有权
标题翻译：用于现场平面图的基板目标，用于现场平面图的方法学方法和使用现场计量学制造集成电路装置的方法
公开(公告)号：US20160033398A1
公开(公告)日：2016-02-04
申请号：US14728529
申请日：2015-06-02
申请人： Ji-myung Kim , Gyu-min Jeong , Tae-hwa Jeong , Kwang-sub Yoon
发明人： Ji-myung Kim , Gyu-min Jeong , Tae-hwa Jeong , Kwang-sub Yoon
IPC分类号： G01N21/47 , G01N21/95
CPC分类号： G03F7/70683 , G01B11/0641 , G01N21/93 , G01N21/956 , G03F7/70625 , G03F7/70633 , G03F7/70641 , H01L23/544
摘要： A substrate can include a feature pattern included in an integrated circuit on the substrate and an in-situ metrology pattern spaced apart from the feature pattern on the substrate, the in-situ metrology pattern and the feature pattern both configured to have equal heights relative to a surface of the substrate.
摘要翻译：衬底可以包括包括在衬底上的集成电路中的特征图案和与衬底上的特征图案间隔开的原位计量图案，原位计量图案和特征图案两者被配置为具有相对于衬底的表面。

12. 发明授权

US07449383B2 Method of manufacturing a capacitor and method of manufacturing a dynamic random access memory device using the same 有权
公开(公告)号：US07449383B2
公开(公告)日：2008-11-11
申请号：US11898667
申请日：2007-09-14
申请人： Kwang-Sub Yoon , Jung-Hyeon Lee , Bong-Cheol Kim , Se-Young Park
发明人： Kwang-Sub Yoon , Jung-Hyeon Lee , Bong-Cheol Kim , Se-Young Park
IPC分类号： H01L21/8242
CPC分类号： H01L28/91 , H01L27/10817 , H01L27/10852
摘要： In a method of manufacturing a capacitor and a method of manufacturing a dynamic random access memory device, an insulating layer covering an upper portion of a conductive layer may be provided with an ozone gas so as to change the property of the upper portion of the insulating layer. The upper portion of the insulating layer may be chemically removed to expose the upper portion of the conductive layer. The exposed upper portion of the conductive layer may be removed so as to transform the conductive layer into a lower electrode. The remaining portion of the insulating layer may be removed, and an upper electrode may be formed on the lower electrode.

13. 发明申请

US20060115954A1 Methods of manufacturing a capacitor and a semiconductor device 审中-公开
标题翻译：制造电容器和半导体器件的方法
公开(公告)号：US20060115954A1
公开(公告)日：2006-06-01
申请号：US11265937
申请日：2005-11-03
申请人： Woo-Seok Shim , Young-Wook Park , Jung-Hyeon Lee , Kwang-Sub Yoon , Chul-Ho Kim , Tae-Jin Park
发明人： Woo-Seok Shim , Young-Wook Park , Jung-Hyeon Lee , Kwang-Sub Yoon , Chul-Ho Kim , Tae-Jin Park
IPC分类号： H01L21/20 , H01L21/8242
CPC分类号： H01L28/91 , H01L27/10817 , H01L27/10852
摘要： In methods of manufacturing a capacitor and a semiconductor device, a mold layer is formed on a substrate having a contact plug. The mold layer includes an opening exposing the contact plug. A conductive layer is formed on the contact plug, an inner sidewall of the opening and the mold layer. A photoresist pattern is formed to substantially fill the opening. A cylindrical lower electrode is formed by partially removing the conductive layer. The mold layer is selectively removed while the photoresist pattern prevents damage to the lower electrode, the contact plug and the substrate. The photoresist pattern is removed, and then a dielectric layer and an upper electrode are sequentially formed on the lower electrode. Damage to the lower electrode and the contact plug are effectively prevented due to the presence of the photoresist pattern during selective removal of the mold layer.
摘要翻译：在制造电容器和半导体器件的方法中，在具有接触插塞的基板上形成模层。模具层包括露出接触塞的开口。在接触插塞，开口的内侧壁和模具层上形成导电层。形成光致抗蚀剂图案以基本上填充开口。通过部分去除导电层形成圆柱形下电极。选择性地去除模具层，同时光刻胶图案防止损坏下部电极，接触插塞和基板。去除光致抗蚀剂图案，然后在下电极上依次形成电介质层和上电极。由于在选择性去除模具层期间存在光致抗蚀剂图案，因此有效地防止了下电极和接触插塞的损坏。

14. 发明申请

US20060073670A1 Method of manufacturing a semiconductor device 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20060073670A1
公开(公告)日：2006-04-06
申请号：US11243397
申请日：2005-10-03
申请人： Yong-Kug Bae , Kwang-Sub Yoon , Young-Wook Park , Jung-Hyeon Lee
发明人： Yong-Kug Bae , Kwang-Sub Yoon , Young-Wook Park , Jung-Hyeon Lee
IPC分类号： H01L21/20 , H01L21/4763 , H01L21/8242
CPC分类号： H01L28/91 , H01L21/7682 , H01L27/10852 , H01L27/10894
摘要： In one embodiment, first and second multi-layer pattern structures are formed over first and second regions of a substrate, respectively. The first and second multi-layer pattern structures include first and second support layer patterns, respectively. The first and second multi-layer pattern structures define first and second openings, respectively. The first and second openings partially expose a portion of the first region and a portion of the second region, respectively. First and second liner patterns are formed on an inner face of the first opening and an inner face of the second opening, respectively. A first etching process is performed on the first multi-layer pattern structure until the first support layer pattern is removed. A second etching process is performed to remove the second multi-layer pattern structure except for the second support layer pattern.
摘要翻译：在一个实施例中，分别在衬底的第一和第二区域上形成第一和第二多层图案结构。第一和第二多层图案结构分别包括第一和第二支撑层图案。第一和第二多层图案结构分别限定第一和第二开口。第一和第二开口分别部分地暴露第一区域的一部分和第二区域的一部分。第一和第二衬里图案分别形成在第一开口的内表面和第二开口的内表面上。对第一多层图案结构进行第一蚀刻处理，直到第一支撑层图案被去除。执行第二蚀刻处理以除去除了第二支撑层图案之外的第二多层图案结构。

15. 发明申请

US20050176607A1 Thinner composition and method of removing photoresist using the same 有权
标题翻译：较薄的组成和使用其去除光致抗蚀剂的方法
公开(公告)号：US20050176607A1
公开(公告)日：2005-08-11
申请号：US11049751
申请日：2005-02-04
申请人： Seung-Hyun Ahn , Eun-Mi Bae , Baik-Soon Choi , Sang-Mun Chon , Dae-Joung Kim , Kwang-Sub Yoon , Sang-Kyu Park , Jae-Ho Kim , Shi-Yong Yi , Kyoung-Mi Kim , Yeu-Young Youn
发明人： Seung-Hyun Ahn , Eun-Mi Bae , Baik-Soon Choi , Sang-Mun Chon , Dae-Joung Kim , Kwang-Sub Yoon , Sang-Kyu Park , Jae-Ho Kim , Shi-Yong Yi , Kyoung-Mi Kim , Yeu-Young Youn
IPC分类号： G03F7/42 , C09D9/00 , C09D9/04 , C11D1/00 , C11D7/26 , C11D11/00 , G03F7/38 , H01L21/027 , H01L21/304
CPC分类号： C11D7/266 , C11D11/0047
摘要： A thinner composition includes propylene glycol ether acetate, methyl 2-hydroxy-2-methyl propionate, and an ester compound such as ethyl lactate, ethyl 3-ethoxy propionate or a mixture thereof.
摘要翻译：较薄的组合物包括丙二醇醚乙酸酯，2-羟基-2-甲基丙酸甲酯和酯化合物如乳酸乙酯，3-乙氧基丙酸乙酯或它们的混合物。

16. 发明授权

US06800418B2 Fluorine-containing photosensitive polymer having hydrate structure and resist composition comprising the same 失效
标题翻译：具有水合物结构的含氟光敏聚合物和包含其的抗蚀剂组合物
公开(公告)号：US06800418B2
公开(公告)日：2004-10-05
申请号：US10264429
申请日：2002-10-04
申请人： Kwang-sub Yoon , Ki-yong Song , Sang-jun Choi , Sang-gyun Woo
发明人： Kwang-sub Yoon , Ki-yong Song , Sang-jun Choi , Sang-gyun Woo
IPC分类号： G03F7004
CPC分类号： C08F232/08 , G03F7/0046 , G03F7/0395 , Y10S430/108
摘要： Provided are a fluorine-containing photosensitive polymer having a hydrate structure and a resist composition including the photosensitive polymer. The photosensitive polymer has an average molecular weight of about 3,000-100,000 with a repeating unit including a group having one of structural formulae below:
摘要翻译：提供具有水合物结构的含氟光敏聚合物和包含光敏聚合物的抗蚀剂组合物。光敏聚合物的平均分子量约为3,000-100,000，重复单元包括具有以下结构式之一的基团：

17. 发明授权

US06642336B1 Photosensitive polymer 有权
标题翻译：光敏聚合物
公开(公告)号：US06642336B1
公开(公告)日：2003-11-04
申请号：US09644101
申请日：2000-08-23
申请人： Sook Lee , Ki-young Kwon , Si-hyeung Lee , Kwang-sub Yoon , Hyun-woo Kim , Dong-won Jung , Sang-jun Choi , Sang-gyun Woo
发明人： Sook Lee , Ki-young Kwon , Si-hyeung Lee , Kwang-sub Yoon , Hyun-woo Kim , Dong-won Jung , Sang-jun Choi , Sang-gyun Woo
IPC分类号： C08F1000
CPC分类号： G03F7/039 , C08G61/08 , G03F7/0045
摘要： A photosensitive polymer which maintains transparency even when exposed to a short-wavelength light source of 193 nm or below, exhibits improved adhesiveness to a substrate, improved contrast and improved resistance to dry etching. The photosensitive polymer includes a first monomer which is alicyclic hydrocarbon carboxylate having an acid-labile C6 to C20 tertiary alicyclic hydrocarbon group as a substituent, and a second monomer which is capable of free radical polymerization.
摘要翻译：即使暴露于193nm以下的短波长光源也能够保持透明性的光敏性聚合物表现出改善的对基材的粘合性，改善的对比度和改善的耐干蚀刻性。感光性高分子包括具有酸不稳定性C6〜C20叔脂环族烃基作为取代基的脂环式羧酸酯的第一单体和能够进行自由基聚合的第二单体。

18. 发明授权

US06537727B2 Resist composition comprising photosensitive polymer having loctone in its backbone 有权
标题翻译：抗蚀剂组合物包含其主链中具有洛酮的光敏聚合物
公开(公告)号：US06537727B2
公开(公告)日：2003-03-25
申请号：US09901569
申请日：2001-07-11
申请人： Kwang-sub Yoon , Dong-won Jung , Si-hyeung Lee , Hyun-woo Kim , Sook Lee , Sang-gyun Woo , Sang-jun Choi
发明人： Kwang-sub Yoon , Dong-won Jung , Si-hyeung Lee , Hyun-woo Kim , Sook Lee , Sang-gyun Woo , Sang-jun Choi
IPC分类号： G03F7038
CPC分类号： G03F7/0395 , G03F7/0392 , G03F7/0397 , Y10S430/106
摘要： A resist composition includes a photosensitive polymer having a lactone in its backbone. The photosensitive polymer of the resist composition includes at least one of the monomers having the formulae: where R1 and R2 are independently a hydrogen atom, alkyl, hydroxyalkyl, alkyloxy, carbonyl or ester, and x, y, v and w are independently integers from 1 to 6.
摘要翻译：抗蚀剂组合物包括在其主链中具有内酯的光敏聚合物。抗蚀剂组合物的光敏聚合物包含至少一种具有下式的单体：其中R 1和R 2独立地为氢原子，烷基，羟烷基，烷氧基，羰基或酯，x，y，v和w独立地为 1〜6。

19. 发明授权

US08263487B2 Method of forming patterns of semiconductor device 有权
标题翻译：形成半导体器件图案的方法
公开(公告)号：US08263487B2
公开(公告)日：2012-09-11
申请号：US12655344
申请日：2009-12-29
申请人： Dong-ki Yoon , Shi-yong Yi , Seong-woon Choi , Seok-hwan Oh , Kwang-sub Yoon , Myeong-cheol Kim , Young-ju Park
发明人： Dong-ki Yoon , Shi-yong Yi , Seong-woon Choi , Seok-hwan Oh , Kwang-sub Yoon , Myeong-cheol Kim , Young-ju Park
IPC分类号： H01L21/4763
CPC分类号： H01L21/32139 , H01L21/0337 , H01L21/0338 , H01L27/115 , H01L27/11517
摘要： A method of forming fine patterns of a semiconductor device by using carbon (C)-containing films includes forming an etching target film on a substrate including first and second regions; forming a plurality of first C-containing film patterns on the etching target film in the first region; forming a buffer layer which covers top and side surfaces of the plurality of first C-containing film patterns; forming a second C-containing film; removing the second C-containing film in the second region; exposing the plurality of first C-containing film patterns by removing a portion of the buffer layer in the first and second regions; and etching the etching target film by using the plurality of first C-containing film patterns, and portions of the second C-containing film which remain in the first region, as an etching mask.
摘要翻译：通过使用含碳（C）的膜来形成半导体器件的精细图案的方法包括在包括第一和第二区域的衬底上形成蚀刻靶膜; 在所述第一区域中的所述蚀刻目标膜上形成多个第一含C膜的图案; 形成覆盖所述多个第一含C膜图案的顶表面和侧表面的缓冲层; 形成第二含C膜; 去除第二区域中的第二含C膜; 通过去除第一和第二区域中的缓冲层的一部分来暴露多个第一含C膜的图案; 并且通过使用多个第一含C膜膜图案和残留在第一区域中的第二含C膜的部分来蚀刻蚀刻目标膜作为蚀刻掩模。

20. 发明授权

US07457058B2 Optical element holder and projection exposure apparatus having the same 有权
标题翻译：光学元件支架和投影曝光装置
公开(公告)号：US07457058B2
公开(公告)日：2008-11-25
申请号：US11451580
申请日：2006-06-13
申请人： Woo-Seok Shim , Jung-Hyeon Lee , Young-Koog Han , Kwang-Sub Yoon , Si-Hyeung Lee
发明人： Woo-Seok Shim , Jung-Hyeon Lee , Young-Koog Han , Kwang-Sub Yoon , Si-Hyeung Lee
IPC分类号： G02B26/02
CPC分类号： G02B7/00 , G03F7/701 , G03F7/70825
摘要： In an optical member holder and a projection exposure apparatus having the same, a light beam radiated from a light source may be formed into light having a desired shape by selecting one of a plurality of optical elements. An optical element holder may include a support member to support the plurality of optical elements, a first driving section to move or rotate the support member to select one of the optical elements, and a second driving section to rotate the selected optical element to adjust an arrangement direction thereof. The light formed by the selected optical element may be directed through a reticle.
摘要翻译：在具有该光学构件保持器和投影曝光设备的光学构件保持器和投影曝光设备中，从光源辐射的光束可以通过选择多个光学元件之一形成具有所需形状的光。光学元件保持器可以包括用于支撑多个光学元件的支撑构件，用于移动或旋转支撑构件以选择一个光学元件的第一驱动部分和第二驱动部分，以旋转所选择的光学元件以调整排列方向。由所选择的光学元件形成的光可以被引导通过掩模版。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式