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11. 发明授权

US08647993B2 Methods for UV-assisted conformal film deposition 有权
标题翻译： UV辅助保形膜沉积方法
公开(公告)号：US08647993B2
公开(公告)日：2014-02-11
申请号：US13472282
申请日：2012-05-15
申请人： Adrien LaVoie , Bhadri Varadarajan , Jon Henri , Dennis Hausmann
发明人： Adrien LaVoie , Bhadri Varadarajan , Jon Henri , Dennis Hausmann
IPC分类号： H01L21/469 , H01L21/31
CPC分类号： H01L21/02167 , C23C16/325 , C23C16/45536 , H01L21/02126 , H01L21/0214 , H01L21/0217 , H01L21/02211 , H01L21/02219 , H01L21/02274 , H01L21/02277 , H01L21/0228
摘要： Described are methods of making silicon nitride (SiN) materials and other silicon-containing films, including carbon-containing and/or oxygen-containing films such as SiCN (also referred to as SiNC), SiON and SiONC films, on substrates. According to various embodiments, the methods involve electromagnetic radiation-assisted activation of one or more reactants. In certain embodiments, for example, the methods involve ultraviolet (UV) activation of vapor phase amine coreactants. The methods can be used to deposit silicon-containing films, including SiN and SiCN films, at temperatures below about 400° C.
摘要翻译：描述了在衬底上制备包括含碳和/或含氧膜如SiCN（也称为SiNC），SiON和SiONC膜的氮化硅（SiN）材料和其它含硅膜的方法。根据各种实施方案，所述方法涉及一种或多种反应物的电磁辐射辅助活化。在某些实施方案中，例如，该方法涉及蒸气相胺共反应物的紫外（UV）活化。该方法可用于在低于约400℃的温度下沉积含硅膜，包括SiN和SiCN膜。

12. 发明授权

US07981810B1 Methods of depositing highly selective transparent ashable hardmask films 有权
标题翻译：沉积高选择性透明可腻硬掩模薄膜的方法
公开(公告)号：US07981810B1
公开(公告)日：2011-07-19
申请号：US11449983
申请日：2006-06-08
申请人： Pramod Subramonium , Zhiyuan Fang , Jon Henri
发明人： Pramod Subramonium , Zhiyuan Fang , Jon Henri
IPC分类号： H01L21/31
CPC分类号： H01L21/3146 , C23C16/26 , H01L21/02115 , H01L21/02274 , H01L21/31144
摘要： The present invention addresses this need by providing a method for forming transparent PECVD deposited ashable hardmasks (AHMs) that have high plasma etch selectivity to underlying layers. Methods of the invention involve depositing the AHM using dilute hydrocarbon precursor gas flows and/or low process temperatures. The AHMs produced are transparent (having absorption coefficients of less than 0.1 in certain embodiments). The AHMs also have the property of high selectivity of the hard mask film to the underlying layers for successful integration of the film, and are suitable for use with 193 nm generation and below lithography schemes wherein high selectivity of the hard mask to the underlying layers is required. The lower temperature process also allows reduction of the overall thermal budget for a wafer.
摘要翻译：本发明通过提供一种用于形成对下层具有高等离子体蚀刻选择性的透明PECVD沉积可吸入硬掩模（AHM）的方法来满足这一需要。本发明的方法包括使用稀烃前体气流和/或低工艺温度沉积AHM。所生产的AHM是透明的（在某些实施方案中吸收系数小于0.1）。 AHM还具有硬掩模膜对下层的高选择性，成功地将薄膜整合的性质，并且适用于193nm生成和低于光刻方案的应用，其中硬掩模对下层的高选择性为需要。较低的温度过程还可以降低晶片的整体热预算。

13. 发明授权

US07981777B1 Methods of depositing stable and hermetic ashable hardmask films 有权
标题翻译：沉积稳定和密封的可硬化硬掩膜的方法
公开(公告)号：US07981777B1
公开(公告)日：2011-07-19
申请号：US11710377
申请日：2007-02-22
申请人： Pramod Subramonium , Yongsik Yu , Zhiyuan Fang , Jon Henri
发明人： Pramod Subramonium , Yongsik Yu , Zhiyuan Fang , Jon Henri
IPC分类号： H01L21/00
CPC分类号： H01L21/0332 , C23C16/26 , C23C16/509 , H01L21/02115 , H01L21/02274 , H01L21/3146
摘要： The present invention provides PECVD methods for forming stable and hermetic ashable hard masks (AHMs). The methods involve depositing AHMs using dilute hydrocarbon precursor gas flows and/or high LFRF/HFRF ratios. In certain embodiments, the AHMs are transparent and have high etch selectivities. Single and dual layer hermetic AHM stacks are also provided. According to various embodiments, the dual layer stack includes an underlying AHM layer having tunable optical properties and a hermetic cap layer.
摘要翻译：本发明提供了用于形成稳定和密封的可嚼硬掩模（AHM）的PECVD方法。这些方法涉及使用稀烃前体气体流和/或高LFRF / HFRF比来沉积AHM。在某些实施方案中，AHM是透明的并且具有高蚀刻选择性。还提供单层和双层密封AHM堆叠。根据各种实施例，双层堆叠包括具有可调光学特性的底层AHM层和密封盖层。

14. 发明授权

US06821407B1 Anode and anode chamber for copper electroplating 有权
标题翻译：用于铜电镀的阳极和阳极室
公开(公告)号：US06821407B1
公开(公告)日：2004-11-23
申请号：US10231147
申请日：2002-08-27
申请人： Jonathan D. Reid , Timothy Mark Archer , Thomas Tan Vu , Seshasayee Varadarajan , Jon Henri , Steven T. Mayer , David Sauer , Anita Kang , Gerald Feldewerth
发明人： Jonathan D. Reid , Timothy Mark Archer , Thomas Tan Vu , Seshasayee Varadarajan , Jon Henri , Steven T. Mayer , David Sauer , Anita Kang , Gerald Feldewerth
IPC分类号： C25D338
CPC分类号： C25D21/12 , C25D17/002 , C25D17/12 , C25F7/00 , H05K3/241
摘要： An electroplating system includes (a) a phosphorized anode having an average grain size of at least about 50 micrometers and (b) plating apparatus that separates the anode from the cathode and prevents most particles generated at the anode from passing to the cathode. The separation may be accomplished by interposing a microporous chemical transport barrier between the anode and cathode. The relatively few particles that are generated at the large grain phosphorized copper anode are prevented from passing into the cathode (wafer) chamber area and thereby causing a defect in the part.
摘要翻译：电镀系统包括（a）平均晶粒尺寸为至少约50微米的磷化阳极和（b）将阳极与阴极分离的电镀装置，并防止在阳极处产生的大多数颗粒通过阴极。分离可以通过在阳极和阴极之间插入微孔化学传输阻挡层来实现。在大晶粒磷化铜阳极处产生的相对较少的颗粒被阻止进入阴极（晶片）室区域，从而导致该部分的缺陷。

15. 发明授权

US08728956B2 Plasma activated conformal film deposition 有权
标题翻译：等离子体激活的保形膜沉积
公开(公告)号：US08728956B2
公开(公告)日：2014-05-20
申请号：US13084399
申请日：2011-04-11
申请人： Adrien LaVoie , Shankar Swaminathan , Hu Kang , Ramesh Chandrasekharan , Tom Dorsh , Dennis M. Hausmann , Jon Henri , Thomas Jewell , Ming Li , Bryan Schlief , Antonio Xavier , Thomas W. Mountsier , Bart J. van Schravendijk , Easwar Srinivasan , Mandyam Sriram
发明人： Adrien LaVoie , Shankar Swaminathan , Hu Kang , Ramesh Chandrasekharan , Tom Dorsh , Dennis M. Hausmann , Jon Henri , Thomas Jewell , Ming Li , Bryan Schlief , Antonio Xavier , Thomas W. Mountsier , Bart J. van Schravendijk , Easwar Srinivasan , Mandyam Sriram
IPC分类号： H01L21/31
CPC分类号： H01L21/0228 , C23C16/045 , C23C16/345 , C23C16/402 , C23C16/45523 , C23C16/4554 , C23C16/56 , H01L21/02164 , H01L21/0217 , H01L21/02274 , H01L21/02348 , H01L21/28562 , H01L21/67017 , H01L21/6719 , H01L21/67201 , H01L21/76224 , H01L21/76825 , H01L21/76826 , H01L21/76829 , H01L21/76837 , H01L21/76898
摘要： Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by the following operations: (a) exposing the substrate surface to a first reactant in vapor phase under conditions allowing the first reactant to adsorb onto the substrate surface; (b) exposing the substrate surface to a second reactant in vapor phase while the first reactant is adsorbed on the substrate surface; and (c) exposing the substrate surface to plasma to drive a reaction between the first and second reactants adsorbed on the substrate surface to form the film.
摘要翻译：在基材表面上沉积膜的方法包括表面介导的反应，其中膜在反应物吸附和反应的一个或多个循环上生长。在一个方面，该方法的特征在于以下操作：（a）在允许第一反应物吸附到基底表面上的条件下，将气相底物表面暴露于第一反应物; （b）当所述第一反应物吸附在所述基材表面上时，将所述基材表面暴露于气相中的第二反应物; 和（c）将衬底表面暴露于等离子体以驱动吸附在衬底表面上的第一和第二反应物之间的反应以形成膜。

16. 发明申请

US20130189854A1 METHOD FOR DEPOSITING A CHLORINE-FREE CONFORMAL SIN FILM 有权
公开(公告)号：US20130189854A1
公开(公告)日：2013-07-25
申请号：US13414619
申请日：2012-03-07
申请人： Dennis Hausmann , Jon Henri , Bart van Schravendijk , Easwar Srinivasan
发明人： Dennis Hausmann , Jon Henri , Bart van Schravendijk , Easwar Srinivasan
IPC分类号： H01L21/318
CPC分类号： C23C16/345 , C23C16/45542 , C23C16/45544 , C23C16/45557 , C23C16/505 , C23C16/52 , C23C16/54 , H01L21/0217 , H01L21/02219 , H01L21/02274 , H01L21/0228 , H01L29/7843
摘要： Described are methods of making silicon nitride (SiN) materials on substrates. Improved SiN films made by the methods are also included. One aspect relates to depositing chlorine (Cl)-free conformal SiN films. In some embodiments, the SiN films are Cl-free and carbon (C)-free. Another aspect relates to methods of tuning the stress and/or wet etch rate of conformal SiN films. Another aspect relates to low-temperature methods of depositing high quality conformal SiN films. In some embodiments, the methods involve using trisilylamine (TSA) as a silicon-containing precursor.

17. 发明授权

US08435608B1 Methods of depositing smooth and conformal ashable hard mask films 有权
标题翻译：沉积光滑和保形的可硬化硬掩模膜的方法
公开(公告)号：US08435608B1
公开(公告)日：2013-05-07
申请号：US12163670
申请日：2008-06-27
申请人： Pramod Subramonium , Zhiyuan Fang , Shawn Hancock , Mike Pierce , Jon Henri
发明人： Pramod Subramonium , Zhiyuan Fang , Shawn Hancock , Mike Pierce , Jon Henri
IPC分类号： H05H1/24
CPC分类号： H01L21/0273 , C23C16/045 , C23C16/26 , C23C16/505 , H01L21/02115 , H01L21/02274 , H01L21/0332 , H01L21/0337
摘要： Provided are plasma enhanced chemical vapor deposition methods of depositing smooth and conformal ashable hard mask films on substrates containing raised or recessed features. The methods involve using precursors having relatively high C:H ratios, such as acetylene (C:H ratio of 1), and plasmas having low ion energies and fluxes. According to various embodiments, the methods involve depositing smooth ashable hard mask films using high frequency radio frequency-generated plasmas with no low frequency component and/or relatively high pressures (e.g., 2-5 Torr). Also provided are methods of depositing ashable hard mask films having good selectivity and improved side wall coverage and roughness. The methods involve depositing a first ashable hard mask film on a substrate having a feature using a process optimized for selectivity and/or optical properties and then depositing a smoothing layer on the first ashable hard mask film using an HF-only process.
摘要翻译：提供了等离子体增强化学气相沉积方法，其在含有凸起或凹陷特征的基底上沉积光滑和保形的可硬化硬掩模膜。所述方法包括使用具有相对较高C:H比例的前体，例如乙炔（C：H比为1）和具有低离子能量和通量的等离子体。根据各种实施方案，所述方法包括使用没有低频分量和/或相对高的压力（例如，2-5托）的高频无线电频率产生的等离子体沉积光滑的可硬化硬掩模薄膜。还提供了具有良好选择性和改进的侧壁覆盖度和粗糙度的可沉积硬掩模膜的方法。所述方法包括使用针对选择性和/或光学性质优化的方法在具有特征的基底上沉积第一可硬化硬掩模膜，然后使用仅HF工艺在第一可吸收硬掩模膜上沉积平滑层。

18. 发明授权

US08362571B1 High compressive stress carbon liners for MOS devices 失效
标题翻译：用于MOS器件的高压应力碳衬垫
公开(公告)号：US08362571B1
公开(公告)日：2013-01-29
申请号：US13016660
申请日：2011-01-28
申请人： Qingguo Wu , James S. Sims , Mandyam Sriram , Seshasayee Varadarajan , Haiying Fu , Pramod Subramonium , Jon Henri , Sirish Reddy
发明人： Qingguo Wu , James S. Sims , Mandyam Sriram , Seshasayee Varadarajan , Haiying Fu , Pramod Subramonium , Jon Henri , Sirish Reddy
IPC分类号： H01L21/02
CPC分类号： H01L21/02115 , H01L21/02274 , H01L21/823807 , H01L21/823814 , H01L29/665 , H01L29/7843 , H01L29/7848
摘要： Transistor architectures and fabrication processes generate channel strain without adversely impacting the efficiency of the transistor fabrication process while preserving the material quality and enhancing the performance of the resulting transistor. Transistor strain is generated is PMOS devices using a highly compressive post-salicide amorphous carbon capping layer applied as a blanket over on at least the source and drain regions. The stress from this capping layer is uniaxially transferred to the PMOS channel through the source-drain regions to create compressive strain in PMOS channel.
摘要翻译：晶体管架构和制造工艺产生通道应变，而不会不利地影响晶体管制造工艺的效率，同时保持材料质量并增强所得晶体管的性能。产生晶体管应变是使用在至少源极和漏极区上作为覆盖层施加的高度压缩的后自适应硅化物非晶碳覆盖层的PMOS器件。来自该覆盖层的应力通过源极 - 漏极区域单轴转移到PMOS沟道，以在PMOS沟道中产生压缩应变。

19. 发明申请

US20120258261A1 INCREASING ETCH SELECTIVITY OF CARBON FILMS WITH LOWER ABSORPTION CO-EFFICIENT AND STRESS 审中-公开
标题翻译：提高碳吸收能力的选择性较低吸收效率和应力
公开(公告)号：US20120258261A1
公开(公告)日：2012-10-11
申请号：US13443668
申请日：2012-04-10
申请人： Sirish Reddy , Alice Hollister , Pramod Subramonium , Jon Henri , Chunhai Ji , Zhi Yuan Fang
发明人： Sirish Reddy , Alice Hollister , Pramod Subramonium , Jon Henri , Chunhai Ji , Zhi Yuan Fang
IPC分类号： B29B13/08
CPC分类号： H01L21/0332 , C23C16/26 , C23C16/56 , H01L21/02115 , H01L21/02274 , H01L21/31122 , H01L21/31144
摘要： A method for depositing a film includes arranging a substrate in a plasma enhanced chemical vapor deposition chamber. A first ashable hardmask (AHM) layer that is carbon-based is deposited on the substrate. During the depositing of the first AHM layer, doping is performed with at least one dopant selected from a group consisting of silicon, silane, boron, nitrogen, germanium, carbon, ammonia, and carbon dioxide. An atomic percentage of the at least one dopant is greater than or equal to 5% of the first AHM layer.
摘要翻译：一种用于沉积膜的方法包括在等离子体增强化学气相沉积室中布置基板。基于碳基的第一可灰化硬掩模（AHM）层被沉积在基底上。在沉积第一AHM层期间，用至少一种选自硅，硅烷，硼，氮，锗，碳，氨和二氧化碳的掺杂剂进行掺杂。至少一种掺杂剂的原子百分比大于或等于第一AHM层的5％。

20. 发明申请

US20110146571A1 TEMPERATURE CONTROLLED SHOWERHEAD FOR HIGH TEMPERATURE OPERATIONS 有权
标题翻译：温度控制淋浴器，用于高温运行
公开(公告)号：US20110146571A1
公开(公告)日：2011-06-23
申请号：US12642497
申请日：2009-12-18
申请人： Christopher M. Bartlett , Ming Li , Jon Henri , Marshall R. Stowell , Mohammed Sabri
发明人： Christopher M. Bartlett , Ming Li , Jon Henri , Marshall R. Stowell , Mohammed Sabri
IPC分类号： C23C16/52 , C23C16/00
CPC分类号： C23C16/52 , C23C16/4401 , C23C16/45565 , C23C16/4557 , C23C16/45572 , C23C16/458 , C23C16/46
摘要： A temperature controlled showerhead assembly for chemical vapor deposition (CVD) chambers enhances heat dissipation to provide accurate temperature control of the showerhead face plate and maintain temperatures substantially lower than surrounding components. Heat dissipates by conduction through a showerhead stem and removed by the heat exchanger mounted outside of the vacuum environment. Heat is supplied by a heating element inserted into the steam of the showerhead. Temperature is controlled using feedback supplied by a temperature sensor installed in the stem and in thermal contact with the face plate.
摘要翻译：用于化学气相沉积（CVD）室的温度控制喷淋头组件增强散热以提供喷头面板的精确的温度控制并保持温度显着低于周围部件。热量通过喷淋头传导并通过安装在真空环境外的热交换器除去。热量由插入淋浴头蒸汽的加热元件提供。使用由安装在杆上的温度传感器提供的反馈并与面板进行热接触来控制温度。

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