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1. 发明授权

US06797146B2 Seed layer repair 失效
标题翻译：种子层修复
公开(公告)号：US06797146B2
公开(公告)日：2004-09-28
申请号：US10003151
申请日：2001-11-02
申请人： Denis Morrissey , Jeffrey M. Calvert , Robert D. Mikkola
发明人： Denis Morrissey , Jeffrey M. Calvert , Robert D. Mikkola
IPC分类号： C25D338
CPC分类号： H01L21/76868 , C25D3/38 , C25D5/52 , H01L21/288 , H01L21/76843 , H01L21/76873 , H01L2221/1089 , H05K3/24 , Y10T428/12493
摘要： Disclosed are methods for repairing seed layers prior to subsequent metallization during the manufacture of electronic devices. Also disclosed are electronic devices containing substantially continuous seed layers.
摘要翻译：公开了在电子设备的制造期间在随后的金属化之前修复种子层的方法。还公开了包含基本上连续的种子层的电子装置。

2. 发明授权

US06576111B1 Process for the copper plating of substrates 失效
标题翻译：基板镀铜工艺
公开(公告)号：US06576111B1
公开(公告)日：2003-06-10
申请号：US09674509
申请日：2000-12-28
申请人： Jürgen Hupe , Walter Kronenberg , Eugen Breitkreuz , Ulrich Schmergel
发明人： Jürgen Hupe , Walter Kronenberg , Eugen Breitkreuz , Ulrich Schmergel
IPC分类号： C25D338
CPC分类号： C25D21/14 , H05K3/241
摘要： A process for the copper plating of substrates using insoluble anodes in acidic copper baths with separate replenishing of consumed copper ions, characterized in that the major portion of the copper ions is directly supplied in the form of copper carbonate and/or basic copper carbonate, dispensing with diaphragms and auxiliary electrolytes, in a separate tank operated in a bypass mode with respect to the working electrolyte, the released gaseous CO2 being separated off in said separate tank.
摘要翻译：一种用于在酸性铜浴中使用不溶性阳极镀铜的方法，其中单独补充消耗的铜离子，其特征在于铜离子的主要部分直接以碳酸铜和/或碱式碳酸铜的形式供应，分配具有隔膜和辅助电解质，在相对于工作电解质以旁路模式操作的单独的罐中，释放的气态CO 2在所述单独的罐中被分离。

3. 发明授权

US06491806B1 Electroplating bath composition 失效
标题翻译：电镀浴组成
公开(公告)号：US06491806B1
公开(公告)日：2002-12-10
申请号：US09560671
申请日：2000-04-27
申请人： Valery Dubin , Kimin Hong , Nate Baxter
发明人： Valery Dubin , Kimin Hong , Nate Baxter
IPC分类号： C25D338
CPC分类号： C25D3/38 , C25D5/18 , C25D7/123 , Y10T428/1234
摘要： The present invention relates to a copper electroplating bath composition and method of using it for microelectronic device fabrication. In particular, the present invention relates to copper electroplating in the fabrication of interconnect structures in semiconductor devices. By use of the inventive copper electroplating bath composition, the incidence of voids in the interconnect structures is reduced.
摘要翻译：本发明涉及一种铜电镀浴组合物及其用于微电子器件制造的方法。特别地，本发明涉及在半导体器件中互连结构制造中的电镀铜。通过使用本发明的铜电镀浴组合物，互连结构中空隙的发生率降低。

4. 发明授权

US06811675B2 Apparatus and method for electrolytically depositing copper on a semiconductor workpiece 有权
标题翻译：在半导体工件上电沉积铜的装置和方法
公开(公告)号：US06811675B2
公开(公告)日：2004-11-02
申请号：US09885232
申请日：2001-06-20
申请人： Linlin Chen
发明人： Linlin Chen
IPC分类号： C25D338
CPC分类号： C25D7/123 , C23C28/322 , C23C28/34 , C25D3/38 , C25D5/10 , H01L21/2885 , H01L21/76843 , H01L21/76868 , H01L21/76873 , H01L21/76877 , H01L2221/1089 , H05K3/423
摘要： This invention employs a novel approach to the copper metallization of a workpiece, such as a semiconductor workpiece. In accordance with the invention, an alkaline electrolytic copper bath is used to electroplate copper onto a seed layer, electroplate copper directly onto a barrier layer material, or enhance an ultra-thin copper seed layer which has been deposited on the barrier layer using a deposition process such as PVD. The resulting copper layer provides an excellent conformal copper coating that fills trenches, vias, and other microstructures in the workpiece. When used for seed layer enhancement, the resulting copper seed layer provide an excellent conformal copper coating that allows the microstructures to be filled with a copper layer having good uniformity using electrochemical deposition techniques. Further, copper layers that are electroplated in the disclosed manner exhibit low sheet resistance and are readily annealed at low temperatures.
摘要翻译：本发明采用了对诸如半导体工件的工件的铜金属化的新颖方法。根据本发明，使用碱性电解铜浴将铜电镀到种子层上，将铜直接电镀到阻挡层材料上，或者使用沉积物增强已经沉积在阻挡层上的超薄铜籽晶层工艺如PVD。所得到的铜层提供了一种优异的保形铜涂层，其填充工件中的沟槽，通孔和其它微结构。当用于种子层增强时，所得到的铜种子层提供了优异的共形铜涂层，其允许使用电化学沉积技术使微结构填充具有良好均匀性的铜层。此外，以所公开的方式电镀的铜层表现出低的薄层电阻，并且在低温下容易退火。

5. 发明授权

US06783654B2 Electrolytic plating method and device for a wiring board 失效
标题翻译：电镀方法及布线板装置
公开(公告)号：US06783654B2
公开(公告)日：2004-08-31
申请号：US09805841
申请日：2001-03-14
申请人： Toshiki Inoue , Kyoko Kumagai
发明人： Toshiki Inoue , Kyoko Kumagai
IPC分类号： C25D338
CPC分类号： H05K3/423 , C25D5/18 , C25D21/14 , H05K2201/09563 , H05K2203/1492 , Y10S204/09
摘要： A plating bath which accommodates an insoluble anode and a printed-circuit board, and a copper dissolved bath which supplies copper ions are arranged. The insoluble anode is arranged as opposed to the printed-circuit board being a cathode, and a forward/reverse current is applied between both of the electrodes. Iron ions are added to a plating solution.
摘要翻译：配置容纳不溶性阳极和印刷电路板的电镀槽以及供给铜离子的铜溶解浴。与作为阴极的印刷电路板相反地布置不溶性阳极，并且在两个电极之间施加正向/反向电流。将铁离子加入镀液中。

6. 发明授权

US06596151B2 Electrodeposition chemistry for filling of apertures with reflective metal 有权
公开(公告)号：US06596151B2
公开(公告)日：2003-07-22
申请号：US09935530
申请日：2001-08-20
申请人： Uziel Landau , John J. D'Urso
发明人： Uziel Landau , John J. D'Urso
IPC分类号： C25D338
CPC分类号： C25D3/38 , C25D7/12
摘要： The present invention provides plating solutions, particularly copper plating solutions, designed to provide uniform coatings on substrates and to provide substantially defect free filling of small features formed on substrates with none or low supporting electrolyte, i.e., which include no acid, low acid, no base, or no conducting salts, and/or high metal ion, e.g., copper, concentration. Defect free filling of features is enhanced by a plating solution containing blends of polyethers (“carrier”) and organic divalent sulfur compounds (“accelerator”), wherein the concentration of the carrier ranges from about 0.1 ppm to about 2500 ppm of the plating solution, and the concentration of the accelerator ranges from about 0.05 ppm to about 1000 ppm of the plating solution. The plating solution is further improved by adding an organic nitrogen compound at a concentration from about 0.01 ppm to about 1000 ppm to improve the filling of vias on a resistive substrate. The organic nitrogen is preferably a substituted thiadiazole, which is used at concentrations from 0.1 ppm to about 50 ppm of the plating solution, or a quartenary nitrogen compound, which is used at concentrations from about 0.01 ppm to about 500 ppm.

7. 发明授权

US06544399B1 Electrodeposition chemistry for filling apertures with reflective metal 有权
标题翻译：用反射金属填充孔的电沉积化学
公开(公告)号：US06544399B1
公开(公告)日：2003-04-08
申请号：US09263653
申请日：1999-03-05
申请人： Uziel Landau , John J. D'Urso
发明人： Uziel Landau , John J. D'Urso
IPC分类号： C25D338
CPC分类号： C25D3/38 , C25D7/12
摘要： The present invention provides plating solutions, particularly copper plating solutions, designed to provide uniform coatings on substrates and to provide substantially defect free filling of small features formed on substrates with none or low supporting electrolyte, i.e., which include no acid, low acid, no base, or no conducting salts, and/or high metal ion, e.g., copper, concentration. Defect free filling of features is enhanced by a plating solution containing blends of polyethers (“carrier”) and organic divalent sulfur compounds (“accelerator”), wherein the concentration of the carrier ranges from about 0.1 ppm to about 2500 ppm of the plating solution, and the concentration of the accelerator ranges from about 0.05 ppm to about 1000 ppm of the plating solution. The plating solution is further improved by adding an organic nitrogen compound at a concentration from about 0.01 ppm to about 1000 ppm to improve the filling of vias on a resistive substrate. The organic nitrogen is preferably a substituted thiadiazole, which is used at concentrations from 0.1 ppm to about 50 ppm of the plating solution, or a quartenary nitrogen compound, which is used at concentrations from about 0.01 ppm to about 500 ppm.
摘要翻译：本发明提供了电镀溶液，特别是镀铜溶液，其设计用于在基底上提供均匀的涂层，并且提供基本上无缺陷的填充形成在基底上的小的特征，其中没有或低的支持电解质，即不包括酸，低酸，无碱，或不含导电盐，和/或高金属离子，例如铜，浓度。通过含有聚醚（“载体”）和有机二价硫化合物（“促进剂”）的共混物的电镀溶液增强了特征的无缺陷填充，其中载体的浓度范围为约0.1ppm至约2500ppm的电镀液，并且加速器的浓度范围为电镀液的约0.05ppm至约1000ppm。通过添加浓度为约0.01ppm至约1000ppm的有机氮化合物来进一步改善电镀溶液，以改善电阻基板上的通孔的填充。有机氮优选为以浓度为约0.01ppm至约500ppm使用的电镀溶液的浓度为0.1ppm至约50ppm或季铵氮化合物的取代噻二唑。

8. 发明授权

US06821407B1 Anode and anode chamber for copper electroplating 有权
标题翻译：用于铜电镀的阳极和阳极室
公开(公告)号：US06821407B1
公开(公告)日：2004-11-23
申请号：US10231147
申请日：2002-08-27
申请人： Jonathan D. Reid , Timothy Mark Archer , Thomas Tan Vu , Seshasayee Varadarajan , Jon Henri , Steven T. Mayer , David Sauer , Anita Kang , Gerald Feldewerth
发明人： Jonathan D. Reid , Timothy Mark Archer , Thomas Tan Vu , Seshasayee Varadarajan , Jon Henri , Steven T. Mayer , David Sauer , Anita Kang , Gerald Feldewerth
IPC分类号： C25D338
CPC分类号： C25D21/12 , C25D17/002 , C25D17/12 , C25F7/00 , H05K3/241
摘要： An electroplating system includes (a) a phosphorized anode having an average grain size of at least about 50 micrometers and (b) plating apparatus that separates the anode from the cathode and prevents most particles generated at the anode from passing to the cathode. The separation may be accomplished by interposing a microporous chemical transport barrier between the anode and cathode. The relatively few particles that are generated at the large grain phosphorized copper anode are prevented from passing into the cathode (wafer) chamber area and thereby causing a defect in the part.
摘要翻译：电镀系统包括（a）平均晶粒尺寸为至少约50微米的磷化阳极和（b）将阳极与阴极分离的电镀装置，并防止在阳极处产生的大多数颗粒通过阴极。分离可以通过在阳极和阴极之间插入微孔化学传输阻挡层来实现。在大晶粒磷化铜阳极处产生的相对较少的颗粒被阻止进入阴极（晶片）室区域，从而导致该部分的缺陷。

9. 发明授权

US06676823B1 High speed acid copper plating 失效
标题翻译：高速酸性镀铜
公开(公告)号：US06676823B1
公开(公告)日：2004-01-13
申请号：US10100708
申请日：2002-03-18
申请人： George Bokisa
发明人： George Bokisa
IPC分类号： C25D338
CPC分类号： C25D3/38
摘要： One aspect of the invention relates to an aqueous copper plating bath containing sulfuric acid with a specific ratio to at least one supplemental acid selected from the group consisting of fluoboric acid, alkane sulfonic acids, and alkanol sulfonic acids; a copper salt; chloride ions; and at least one sulfate bath brightener. Another aspect of the invention relates to aqueous copper plating bath containing fluoboric acid and/or an alkane sulfonic acid but no sulfuric acid, copper sulfate, chloride ions, and at least one sulfate bath brightener. Yet another aspect of the invention relates to methods of plating copper from the aforementioned copper plating baths. Still yet another aspect of the invention relates to methods of plating copper at high speed using relatively high current densities.
摘要翻译：本发明的一个方面涉及含有与至少一种选自氟硼酸，链烷磺酸和链烷醇磺酸的至少一种补充酸的硫酸的含水铜电镀液; 铜盐; 氯离子; 和至少一种硫酸盐浴增白剂。本发明的另一方面涉及含有氟硼酸和/或烷烃磺酸但不含硫酸，硫酸铜，氯离子和至少一种硫酸盐浴增白剂的含水铜电镀浴。本发明的另一方面涉及从上述镀铜浴镀铜的方法。本发明的另一方面涉及使用相对高的电流密度高速镀铜的方法。

10. 发明授权

US06562222B1 Copper electroplating liquid, pretreatment liquid for copper electroplating and method of copper electroplating 有权
标题翻译：铜电镀液，铜电镀预处理液及铜电镀方法
公开(公告)号：US06562222B1
公开(公告)日：2003-05-13
申请号：US09980947
申请日：2001-12-05
申请人： Jyunnosuke Sekiguchi , Syunichiro Yamaguchi
发明人： Jyunnosuke Sekiguchi , Syunichiro Yamaguchi
IPC分类号： C25D338
CPC分类号： C25D7/123 , C25D3/38 , C25D5/34 , H01L21/2885
摘要： In filling fine via holes or trenches of the wiring (LSI) pattern formed on a semiconductor wafer, a copper electroplating is carried out by using a copper electroplating solution. containing an azole or a silane coupling agent, or a copper electroplating is carried out after the immersion into a pretreatment solution containing an azole or a silane coupling agent. As illustratively shown above, the addition of a component having the action to inhibit the dissolution of copper to an electroplating solution or the pretreatment by a solution containing a component having the action to inhibit the dissolution of copper can inhibit the dissolution of a copper seed layer covering poorly, and thus can prevent the occurrence of defects such as voids and seams.
摘要翻译：在填充形成在半导体晶片上的布线（LSI）图案的精细通孔或沟槽中时，通过使用铜电镀溶液进行铜电镀。含有唑或硅烷偶联剂或铜电镀在浸入含有唑或硅烷偶联剂的预处理溶液中之后进行。如上所述，添加具有抑制铜溶解于电镀液的作用的成分或者通过含有抑制铜的溶解作用的成分的溶液的预处理，可以抑制铜种子层的溶解覆盖不良，因此可以防止诸如空隙和接缝的缺陷的发生。

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