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11. 发明申请

US20100102345A1 LIGHT EMITTING DEVICE PACKAGE AND LIGHT UNIT HAVING THE SAME 有权
标题翻译：具有发光装置的灯具和灯具
公开(公告)号：US20100102345A1
公开(公告)日：2010-04-29
申请号：US12530637
申请日：2008-04-17
申请人： Sung Min Kong , Choong Youl Kim , Hee Seok Choi
发明人： Sung Min Kong , Choong Youl Kim , Hee Seok Choi
IPC分类号： H01L33/00
CPC分类号： H01L33/60 , H01L33/30 , H01L33/32 , H01L33/486 , H01L33/54 , H01L33/62 , H01L2224/48091 , H01L2224/48247 , H01L2924/00014
摘要： Disclosed is an LED package. The LED package comprises a body comprising a cavity at one side thereof, at least one of lead frames comprising a bottom frame and a sidewall frame in the cavity, and a light emitting device electrically connected with the lead frames.
摘要翻译：公开了一种LED封装。所述LED封装包括在其一侧包括空腔的主体，所述空腔中包括底部框架和侧壁框架的引线框架中的至少一个以及与所述引线框架电连接的发光器件。

12. 发明授权

US07317745B2 Multi-wavelength laser diode 失效
标题翻译：多波长激光二极管
公开(公告)号：US07317745B2
公开(公告)日：2008-01-08
申请号：US10998921
申请日：2004-11-30
申请人： Tae Sung Jang , Hee Seok Choi , Sang Deog Cho , Dong Min Jeon
发明人： Tae Sung Jang , Hee Seok Choi , Sang Deog Cho , Dong Min Jeon
IPC分类号： H01S5/00 , H01S3/08
CPC分类号： H01S5/10 , H01S3/08086 , H01S5/028 , H01S5/20
摘要： The present invention relates to a multi-wavelength laser diode, in which an oscillating structure includes a semiconductor substrate, and a lower cladding layer, an active layer and a ridge formed in their order on the semiconductor substrate. A first metal layer is formed on a first face of the oscillating structure including one end of the ridge, and made of a metal having a high reflectivity in a first wavelength range of at least a predetermined wavelength. A second metal layer is formed on the first metal layer, the second metal layer being made of a metal having a high reflectivity in a second wavelength range under the predetermined wavelength. The multi-wavelength laser diode can improve-the reflective layer structure to achieve a high reflectivity in the entire visible light range.
摘要翻译：本发明涉及一种多波长激光二极管，其中振荡结构包括半导体衬底，以及在半导体衬底上依次形成的下包层，有源层和脊。第一金属层形成在包括脊的一端的振荡结构的第一面上，并且由在至少预定波长的第一波长范围内具有高反射率的金属制成。第二金属层形成在第一金属层上，第二金属层由在预定波长的第二波长范围内具有高反射率的金属制成。多波长激光二极管可以改善反射层结构，以在整个可见光范围内实现高反射率。

13. 发明授权

US07012284B2 Nitride semiconductor light emitting device and method of manufacturing the same 有权
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US07012284B2
公开(公告)日：2006-03-14
申请号：US10837780
申请日：2004-05-04
申请人： Seok Beom Choi , Bang Won Oh , Hee Seok Choi
发明人： Seok Beom Choi , Bang Won Oh , Hee Seok Choi
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L33/025
摘要： Disclosed herein is a nitride semiconductor light emitting device. The nitride semiconductor light emitting device comprises an n-type nitride semiconductor layer on a substrate, an active layer formed on the n-type nitride semiconductor layer so that a portion of the n-type nitride semiconductor layer is exposed, a p-type nitride semiconductor layer formed on the active layer, a high-concentration dopant area on the p-type nitride semiconductor layer, a counter doping area on the high-concentration dopant areas, an n-side electrode formed on an exposed portion of the n-type nitride semiconductor layer, and a p-side electrode formed on the counter doping area. A satisfactory ohmic contact for the p-side electrode is provided by an ion implantation process and heat treatment.
摘要翻译：这里公开了一种氮化物半导体发光器件。氮化物半导体发光器件包括在衬底上的n型氮化物半导体层，形成在n型氮化物半导体层上的有源层，以使n型氮化物半导体层的一部分露出，p型氮化物形成在有源层上的半导体层，p型氮化物半导体层上的高浓度掺杂剂区域，高浓度掺杂剂区域上的相对掺杂区域，形成在n型氮化物半导体层的暴露部分上的n侧电极氮化物半导体层和形成在反掺杂区域上的p侧电极。通过离子注入工艺和热处理提供了用于p侧电极的令人满意的欧姆接触。

14. 发明申请

US20130193464A1 LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE AND LIGHT EMITTING MODULE 有权
标题翻译：发光装置，发光装置包装和发光模块
公开(公告)号：US20130193464A1
公开(公告)日：2013-08-01
申请号：US13732628
申请日：2013-01-02
申请人： Seok Hun BAE , Seok Beom CHOI , Pil Geun KANG , Deok Ki HWANG , Young Ju HAN , Hee Seok CHOI , Young Rok PARK , Tae Don LEE , Hyun Sung OH , Jee Hue JOO , Dong Woo KANG , Sung Sig KIM
发明人： Seok Hun BAE , Seok Beom CHOI , Pil Geun KANG , Deok Ki HWANG , Young Ju HAN , Hee Seok CHOI , Young Rok PARK , Tae Don LEE , Hyun Sung OH , Jee Hue JOO , Dong Woo KANG , Sung Sig KIM
IPC分类号： H01L33/40
CPC分类号： H01L33/405 , H01L33/20 , H01L33/382 , H01L33/44 , H01L33/486 , H01L33/62 , H01L33/641 , H01L2224/14 , H01L2224/16225 , H01L2224/16245 , H01L2924/01322 , H01L2924/1301 , H01L2924/00
摘要： Disclosed are a light emitting device, a light emitting device package and a light emitting module. The light emitting device includes a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer between the first and second conductive semiconductor layers; a support member under the light emitting structure; a reflective electrode layer between the second conductive semiconductor layer and the support member; and first to third connection electrodes spaced apart from each other in the support member. The second connection electrode is disposed between the first and third connection electrodes, the first and third connection electrodes are electrically connected with each other, and the support member is disposed at a peripheral portion of the first to third connection electrodes.
摘要翻译：公开了发光器件，发光器件封装和发光模块。发光器件包括发光结构，其包括第一导电半导体层，第二导电半导体层和在第一和第二导电半导体层之间的有源层; 在发光结构下的支撑构件; 在所述第二导电半导体层和所述支撑构件之间的反射电极层; 以及在支撑构件中彼此间隔开的第一至第三连接电极。第二连接电极设置在第一和第三连接电极之间，第一和第三连接电极彼此电连接，并且支撑构件设置在第一至第三连接电极的周边部分。

15. 发明申请

US20120299038A1 LIGHT EMITTING DEVICE AND LIGHT EMITTING APPARATUS 有权
标题翻译：发光装置和发光装置
公开(公告)号：US20120299038A1
公开(公告)日：2012-11-29
申请号：US13293858
申请日：2011-11-10
申请人： Deok Ki Hwang , Young Ju Han , Hee Seok Choi , Ju Won Lee , Pil Geun Kang , Seok Beom Choi
发明人： Deok Ki Hwang , Young Ju Han , Hee Seok Choi , Ju Won Lee , Pil Geun Kang , Seok Beom Choi
IPC分类号： H01L33/36
CPC分类号： H01L33/62 , H01L33/0079 , H01L33/06 , H01L33/32 , H01L33/385 , H01L33/405 , H01L33/44 , H01L33/46 , H01L33/483 , H01L33/505 , H01L33/507 , H01L33/641 , H01L2224/16
摘要： A light emitting device may be provided that includes a substrate, a light emitting structure, a first electrode under the first semiconductor layer, a reflective electrode layer under the second conductive semiconductor layer, a second electrode under the reflective electrode layer, and a support member under the first semiconductor layer and the reflective electrode layer around the first and second electrodes. A first connection electrode may be provided under the first electrode. At least a part of the first connection electrode is provided in the support member. A second connection electrode may be provided under the second electrode At least a part of the second connection electrode may be provided in the support member.
摘要翻译：可以提供一种发光器件，其包括衬底，发光结构，第一半导体层下的第一电极，第二导电半导体层下的反射电极层，反射电极层下的第二电极和支撑构件在第一半导体层和第一和第二电极周围的反射电极层之下。可以在第一电极下方设置第一连接电极。第一连接电极的至少一部分设置在支撑构件中。第二连接电极可以设置在第二电极下方第二连接电极的至少一部分可以设置在支撑构件中。

16. 发明申请

US20120098018A1 LIGHT EMITTING DEVICE PACKAGE AND LIGHT UNIT HAVING THE SAME 有权
标题翻译：具有发光装置的灯具和灯具
公开(公告)号：US20120098018A1
公开(公告)日：2012-04-26
申请号：US13341680
申请日：2011-12-30
申请人： Sung Min Kong , Choong Youl Kim , Hee Seok Choi
发明人： Sung Min Kong , Choong Youl Kim , Hee Seok Choi
IPC分类号： H01L33/00
CPC分类号： H01L33/60 , H01L33/30 , H01L33/32 , H01L33/486 , H01L33/54 , H01L33/62 , H01L2224/48091 , H01L2224/48247 , H01L2924/00014
摘要： Disclosed is an LED package. The LED package includes a package body, a semiconductor light emitting device on the package body and at least one of frames on the package body. At least one of the frames includes a bottom frame on the package body, and at least two sidewall frames extending from the bottom frame and inclined with respect to the bottom frame.
摘要翻译：公开了一种LED封装。 LED封装包括封装主体，封装主体上的半导体发光器件和封装主体上的至少一个框架。至少一个框架包括在封装主体上的底部框架，以及至少两个从底部框架延伸并相对于底部框架倾斜的侧壁框架。

17. 发明授权

US08013517B2 Phosphor material, coating phosphor composition, and light emitting device 有权
标题翻译：荧光体材料，涂料荧光粉组合物和发光装置
公开(公告)号：US08013517B2
公开(公告)日：2011-09-06
申请号：US12299438
申请日：2007-12-27
申请人： Choong Youl Kim , Sung Min Kong , Hee Seok Choi , Seung Hyok Park , Ho Shin Yoon , Chang Hee Lee
发明人： Choong Youl Kim , Sung Min Kong , Hee Seok Choi , Seung Hyok Park , Ho Shin Yoon , Chang Hee Lee
IPC分类号： H01J1/62
CPC分类号： C09K11/7792 , H05B33/14
摘要： Disclosed are a phosphor, a coating phosphor composition, a method for preparing the phosphor, and a light emitting device. A silicate-based phosphor is expressed in a chemical formula of (4-x-y-z)SrO.xBaO.zCaO.aMgO.2(SiO2).bM2O3:yEu, wherein M is at least one of Y, Ce, La, Nd, Gd, Tb, Yb or Lu, in which 0
摘要翻译：公开了荧光体，涂料荧光体组合物，荧光体的制备方法以及发光装置。硅酸盐系荧光体以（4-xyz）SrO·BaO·zCaO·aMgO·2（SiO 2）·bM 2 O 3：yEu的化学式表示，其中M为Y，Ce，La，Nd，Gd中的至少一种，Tb，Yb或Lu，其中0

18. 发明申请

US20110089450A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20110089450A1
公开(公告)日：2011-04-21
申请号：US12793770
申请日：2010-06-04
申请人： Hwan Hee JEONG , Sang Youl LEE , June O SONG , Tchang Hun OH , Hee Seok CHOI , Kwang Ki CHOI
发明人： Hwan Hee JEONG , Sang Youl LEE , June O SONG , Tchang Hun OH , Hee Seok CHOI , Kwang Ki CHOI
IPC分类号： H01L33/00
CPC分类号： H01L33/44 , H01L33/0075 , H01L33/0079 , H01L33/145 , H01L33/22 , H01L33/24 , H01L33/32 , H01L33/38 , H01L33/40 , H01L33/405 , H01L2224/48091 , H01L2933/0016 , H01L2924/00014
摘要： A semiconductor light-emitting device is provided. The semiconductor light-emitting device may include a light-emitting structure, an electrode, an ohmic layer, an electrode layer, an adhesion layer, and a channel layer. The light-emitting structure may include a compound semiconductor layer. The electrode may be disposed on the light-emitting structure. The ohmic layer may be disposed under the light-emitting structure. The electrode layer may include a reflective metal under the ohmic layer. The adhesion layer may be disposed under the electrode layer. The channel layer may be disposed along a bottom edge of the light-emitting structure.
摘要翻译：提供了一种半导体发光器件。半导体发光器件可以包括发光结构，电极，欧姆层，电极层，粘合层和沟道层。发光结构可以包括化合物半导体层。电极可以设置在发光结构上。欧姆层可以设置在发光结构之下。电极层可以包括在欧姆层之下的反射金属。粘合层可以设置在电极层的下方。沟道层可以沿着发光结构的底部边缘设置。

19. 发明申请

US20070290225A1 Method of manufacturing a vertically-structured GaN-based light emitting diode 有权
标题翻译：制造垂直结构的GaN基发光二极管的方法
公开(公告)号：US20070290225A1
公开(公告)日：2007-12-20
申请号：US11892445
申请日：2007-08-23
申请人： Jae Hoon Lee , Hee Seok Choi , Jeong Tak Oh , Su Yeol Lee
发明人： Jae Hoon Lee , Hee Seok Choi , Jeong Tak Oh , Su Yeol Lee
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/0079 , H01L33/22 , H01L2933/0083
摘要： The present invention relates to a method of manufacturing a vertically-structured GaN-based light emitting diode. The method of manufacturing a vertically-structured GaN-based light emitting diode includes forming a GaN layer on a substrate; patterning the compound layer in a predetermined shape; forming an n-type GaN layer on the patterned compound layer through the epitaxial lateral over-growth process and sequentially forming an active layer and a p-type GaN layer on the n-type GaN layer; forming a structure supporting layer on the p-type GaN layer; sequentially removing the substrate and the GaN layer formed on the substrate after forming the structure supporting layer; removing the patterned compound layer exposed after removing the GaN layer so as to form an n-type GaN layer patterned in a concave shape; and forming an n-type electrode on the n-type GaN layer patterned in a concave shape.
摘要翻译：本发明涉及一种垂直构造的GaN基发光二极管的制造方法。制造垂直结构的GaN基发光二极管的方法包括在衬底上形成GaN层; 将化合物层图案化成预定的形状; 通过外延横向过度生长工艺在图案化的化合物层上形成n型GaN层，并在n型GaN层上依次形成有源层和p型GaN层; 在p型GaN层上形成结构支撑层; 在形成结构支撑层之后，依次去除衬底和形成在衬底上的GaN层; 去除在去除GaN层之后暴露的图案化合物层，以形成图案化为凹形的n型GaN层; 在形成凹形的n型GaN层上形成n型电极。

20. 发明授权

US07306964B2 Method of manufacturing a vertically-structured GaN-based light emitting diode 有权
公开(公告)号：US07306964B2
公开(公告)日：2007-12-11
申请号：US11430990
申请日：2006-05-10
申请人： Jae Hoon Lee , Hee Seok Choi , Jeong Tak Oh , Su Yeol Lee
发明人： Jae Hoon Lee , Hee Seok Choi , Jeong Tak Oh , Su Yeol Lee
IPC分类号： H01L21/00
CPC分类号： H01L33/20 , H01L33/0079 , H01L33/22 , H01L2933/0083
摘要： The present invention relates to a method of manufacturing a vertically-structured GaN-based light emitting diode. The method of manufacturing a vertically-structured GaN-based light emitting diode includes forming a GaN layer on a substrate; patterning the compound layer in a predetermined shape; forming an n-type GaN layer on the patterned compound layer through the epitaxial lateral over-growth process and sequentially forming an active layer and a p-type GaN layer on the n-type GaN layer; forming a structure supporting layer on the p-type GaN layer; sequentially removing the substrate and the GaN layer formed on the substrate after forming the structure supporting layer; removing the patterned compound layer exposed after removing the GaN layer so as to form an n-type GaN layer patterned in a concave shape; and forming an n-type electrode on the n-type GaN layer patterned in a concave shape.

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