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1. 发明申请

US20120299038A1 LIGHT EMITTING DEVICE AND LIGHT EMITTING APPARATUS 有权
标题翻译：发光装置和发光装置
公开(公告)号：US20120299038A1
公开(公告)日：2012-11-29
申请号：US13293858
申请日：2011-11-10
申请人： Deok Ki Hwang , Young Ju Han , Hee Seok Choi , Ju Won Lee , Pil Geun Kang , Seok Beom Choi
发明人： Deok Ki Hwang , Young Ju Han , Hee Seok Choi , Ju Won Lee , Pil Geun Kang , Seok Beom Choi
IPC分类号： H01L33/36
CPC分类号： H01L33/62 , H01L33/0079 , H01L33/06 , H01L33/32 , H01L33/385 , H01L33/405 , H01L33/44 , H01L33/46 , H01L33/483 , H01L33/505 , H01L33/507 , H01L33/641 , H01L2224/16
摘要： A light emitting device may be provided that includes a substrate, a light emitting structure, a first electrode under the first semiconductor layer, a reflective electrode layer under the second conductive semiconductor layer, a second electrode under the reflective electrode layer, and a support member under the first semiconductor layer and the reflective electrode layer around the first and second electrodes. A first connection electrode may be provided under the first electrode. At least a part of the first connection electrode is provided in the support member. A second connection electrode may be provided under the second electrode At least a part of the second connection electrode may be provided in the support member.
摘要翻译：可以提供一种发光器件，其包括衬底，发光结构，第一半导体层下的第一电极，第二导电半导体层下的反射电极层，反射电极层下的第二电极和支撑构件在第一半导体层和第一和第二电极周围的反射电极层之下。可以在第一电极下方设置第一连接电极。第一连接电极的至少一部分设置在支撑构件中。第二连接电极可以设置在第二电极下方第二连接电极的至少一部分可以设置在支撑构件中。

2. 发明授权

US09269878B2 Light emitting device and light emitting apparatus 有权
标题翻译：发光装置和发光装置
公开(公告)号：US09269878B2
公开(公告)日：2016-02-23
申请号：US13293858
申请日：2011-11-10
申请人： Deok Ki Hwang , Young Ju Han , Hee Seok Choi , Ju Won Lee , Pil Geun Kang , Seok Beom Choi
发明人： Deok Ki Hwang , Young Ju Han , Hee Seok Choi , Ju Won Lee , Pil Geun Kang , Seok Beom Choi
IPC分类号： H01L33/36 , H01L33/62 , H01L33/00 , H01L33/38 , H01L33/40 , H01L33/44 , H01L33/50
CPC分类号： H01L33/62 , H01L33/0079 , H01L33/06 , H01L33/32 , H01L33/385 , H01L33/405 , H01L33/44 , H01L33/46 , H01L33/483 , H01L33/505 , H01L33/507 , H01L33/641 , H01L2224/16
摘要： A light emitting device may be provided that includes a substrate, a light emitting structure, a first electrode under the first semiconductor layer, a reflective electrode layer under the second conductive semiconductor layer, a second electrode under the reflective electrode layer, and a support member under the first semiconductor layer and the reflective electrode layer around the first and second electrodes. A first connection electrode may be provided under the first electrode. At least a part of the first connection electrode is provided in the support member. A second connection electrode may be provided under the second electrode At least a part of the second connection electrode may be provided in the support member.
摘要翻译：可以提供一种发光器件，其包括衬底，发光结构，第一半导体层下的第一电极，第二导电半导体层下的反射电极层，反射电极层下的第二电极和支撑构件在第一半导体层和第一和第二电极周围的反射电极层之下。可以在第一电极下方设置第一连接电极。第一连接电极的至少一部分设置在支撑构件中。第二连接电极可以设置在第二电极下方第二连接电极的至少一部分可以设置在支撑构件中。

3. 发明授权

US07436001B2 Vertical GaN-based LED and method of manufacturing the same 有权
标题翻译：垂直GaN基LED及其制造方法
公开(公告)号：US07436001B2
公开(公告)日：2008-10-14
申请号：US11490254
申请日：2006-07-21
申请人： Jae Hoon Lee , Bang Won Oh , Hee Seok Choi , Jeong Tak Oh , Seok Beom Choi , Su Yeol Lee
发明人： Jae Hoon Lee , Bang Won Oh , Hee Seok Choi , Jeong Tak Oh , Seok Beom Choi , Su Yeol Lee
IPC分类号： H01L27/15
CPC分类号： H01L33/22 , H01L33/14
摘要： A vertical GaN-based LED and a method of manufacturing the same are provided. The vertical GaN-based LED includes an n-electrode, a first n-type GaN layer, a first AlGaN layer, a GaN layer, a second AlGaN layer, a second n-type GaN layer, an active layer, a p-type GaN layer, and a structure support layer. The first n-type GaN layer has uneven patterns having a plurality of protuberances. The first AlGaN layer is formed under the first n-type GaN layer, and the GaN layer is formed under the first AlGaN layer. The active layer is formed under the second n-type GaN layer, and the p-type GaN layer is formed under the active layer. A p-electrode is formed under the p-type GaN layer, and the structure support layer is formed under the p-electrode.
摘要翻译：提供了一种垂直GaN基LED及其制造方法。垂直GaN基LED包括n电极，第一n型GaN层，第一AlGaN层，GaN层，第二AlGaN层，第二n型GaN层，有源层，p型 GaN层和结构支撑层。第一n型GaN层具有具有多个突起的不均匀图案。第一AlGaN层形成在第一n型GaN层下方，并且GaN层形成在第一AlGaN层的下方。有源层形成在第二n型GaN层下面，p型GaN层形成在有源层下面。在p型GaN层的下方形成有p电极，在p电极的下方形成有结构支撑层。

4. 发明申请

US20070267640A1 Semiconductor light emitting diode and method of manufacturing the same 审中-公开
标题翻译：半导体发光二极管及其制造方法
公开(公告)号：US20070267640A1
公开(公告)日：2007-11-22
申请号：US11436651
申请日：2006-05-19
申请人： Jae Hoon Lee , Hee Seok Choi , Seok Beom Choi , Jeong Tak Oh , Su Yeol Lee
发明人： Jae Hoon Lee , Hee Seok Choi , Seok Beom Choi , Jeong Tak Oh , Su Yeol Lee
IPC分类号： H01L33/00
CPC分类号： H01L33/14 , H01L33/22 , H01L33/32 , H01L33/42 , H01L2933/0083
摘要： The present invention relates to a semiconductor light emitting diode. The semiconductor light emitting diode includes a substrate; an n-type nitride semiconductor layer that is formed on the substrate; an active layer that is formed on the n-type nitride semiconductor layer; a p-type nitride semiconductor layer that is formed on the active layer; a first undoped GaN layer that is formed on the p-type nitride semiconductor layer; an AlGaN layer that is formed on the first undoped GaN layer so as to provide a two-dimensional electron gas layer to the interface with the first undoped GaN layer; a second undoped GaN layer that is formed on the AlGaN layer and has irregularities such that the light generated in the active layer is not internally reflected toward the active layer; a p-type transparent electrode that is formed on the second undoped GaN layer; and an n-type electrode and p-type electrode that are formed to be respectively connected onto the n-type nitride semiconductor layer and the p-type transparent electrode.
摘要翻译：本发明涉及一种半导体发光二极管。半导体发光二极管包括基板; 形成在所述基板上的n型氮化物半导体层; 形成在n型氮化物半导体层上的有源层; 形成在有源层上的p型氮化物半导体层; 在p型氮化物半导体层上形成的第一未掺杂GaN层; AlGaN层，形成在第一未掺杂的GaN层上，以便向与第一未掺杂GaN层的界面提供二维电子气层; 第二未掺杂的GaN层，其形成在AlGaN层上并且具有凹凸，使得在有源层中产生的光不向有源层内部反射; 形成在第二未掺杂GaN层上的p型透明电极; 以及形成为分别连接在n型氮化物半导体层和p型透明电极上的n型电极和p型电极。

5. 发明授权

US07012284B2 Nitride semiconductor light emitting device and method of manufacturing the same 有权
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US07012284B2
公开(公告)日：2006-03-14
申请号：US10837780
申请日：2004-05-04
申请人： Seok Beom Choi , Bang Won Oh , Hee Seok Choi
发明人： Seok Beom Choi , Bang Won Oh , Hee Seok Choi
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L33/025
摘要： Disclosed herein is a nitride semiconductor light emitting device. The nitride semiconductor light emitting device comprises an n-type nitride semiconductor layer on a substrate, an active layer formed on the n-type nitride semiconductor layer so that a portion of the n-type nitride semiconductor layer is exposed, a p-type nitride semiconductor layer formed on the active layer, a high-concentration dopant area on the p-type nitride semiconductor layer, a counter doping area on the high-concentration dopant areas, an n-side electrode formed on an exposed portion of the n-type nitride semiconductor layer, and a p-side electrode formed on the counter doping area. A satisfactory ohmic contact for the p-side electrode is provided by an ion implantation process and heat treatment.
摘要翻译：这里公开了一种氮化物半导体发光器件。氮化物半导体发光器件包括在衬底上的n型氮化物半导体层，形成在n型氮化物半导体层上的有源层，以使n型氮化物半导体层的一部分露出，p型氮化物形成在有源层上的半导体层，p型氮化物半导体层上的高浓度掺杂剂区域，高浓度掺杂剂区域上的相对掺杂区域，形成在n型氮化物半导体层的暴露部分上的n侧电极氮化物半导体层和形成在反掺杂区域上的p侧电极。通过离子注入工艺和热处理提供了用于p侧电极的令人满意的欧姆接触。

6. 发明授权

US07372078B2 Vertical gallium-nitride based light emitting diode 有权
标题翻译：垂直氮化镓基发光二极管
公开(公告)号：US07372078B2
公开(公告)日：2008-05-13
申请号：US11581003
申请日：2006-10-16
申请人： Tae Sung Jang , Su Yeol Lee , Seok Beom Choi
发明人： Tae Sung Jang , Su Yeol Lee , Seok Beom Choi
IPC分类号： H01L33/00
CPC分类号： H01L33/46 , H01L33/0079 , H01L33/385
摘要： A vertical GaN-based LED includes: an n-electrode; a light-emitting structure in which an n-type GaN layer, an active layer, and a p-type GaN layer are sequentially formed under the n-electrode; a p-electrode formed under the light-emitting structure; a passivation layer formed to cover the side and bottom surfaces of the light-emitting structure and expose a predetermined portion of the p-electrode, the passivation layer being formed of a distributed Bragg reflector (DBR); a plating seed layer formed under the passivation layer and the p-electrode; and a support layer formed under the plating seed layer.
摘要翻译：垂直GaN基LED包括：n电极; 在n电极下依次形成n型GaN层，有源层和p型GaN层的发光结构; 形成在发光结构下的p电极; 钝化层，其形成为覆盖所述发光结构的侧表面和底表面并暴露所述p电极的预定部分，所述钝化层由分布式布拉格反射器（DBR）形成; 形成在钝化层下面的电镀种子层和p电极; 以及形成在电镀种子层下的支撑层。

7. 发明授权

US08178378B2 Method of manufacturing vertical nitride semiconductor light emitting diode 有权
标题翻译：立式氮化物半导体发光二极管的制造方法
公开(公告)号：US08178378B2
公开(公告)日：2012-05-15
申请号：US12909204
申请日：2010-10-21
申请人： Sang Ho Yoon , Su Yeol Lee , Doo Go Baik , Seok Beom Choi , Tae Sung Jang , Jong Gun Woo
发明人： Sang Ho Yoon , Su Yeol Lee , Doo Go Baik , Seok Beom Choi , Tae Sung Jang , Jong Gun Woo
IPC分类号： H01L21/56
CPC分类号： H01L33/22 , H01L33/0079 , H01L33/20
摘要： A vertical nitride-based semiconductor LED comprises a structure support layer; a p-electrode formed on the structure support layer; a p-type nitride semiconductor layer formed on the p-electrode; an active layer formed on the p-type nitride semiconductor layer; an n-type nitride semiconductor layer formed on the active layer; an n-electrode formed on a portion of the n-type nitride semiconductor layer; and a buffer layer formed on a region of the n-type nitride semiconductor layer on which the n-electrode is not formed, the buffer layer having irregularities formed thereon. The surface of the n-type nitride semiconductor layer coming in contact with the n-electrode is flat.
摘要翻译：垂直氮化物基半导体LED包括结构支撑层; 形成在结构支撑层上的p电极; 形成在p电极上的p型氮化物半导体层; 形成在p型氮化物半导体层上的有源层; 形成在有源层上的n型氮化物半导体层; 形成在n型氮化物半导体层的一部分上的n电极; 以及形成在其上未形成有n电极的n型氮化物半导体层的区域上的缓冲层，其上形成有凹凸。与n电极接触的n型氮化物半导体层的表面是平坦的。

8. 发明授权

US07838317B2 Vertical nitride semiconductor light emitting diode and method of manufacturing the same 失效
标题翻译：垂直氮化物半导体发光二极管及其制造方法
公开(公告)号：US07838317B2
公开(公告)日：2010-11-23
申请号：US12544868
申请日：2009-08-20
申请人： Sang Ho Yoon , Su Yeol Lee , Doo Go Baik , Seok Beom Choi , Tae Sung Jang , Jong Gun Woo
发明人： Sang Ho Yoon , Su Yeol Lee , Doo Go Baik , Seok Beom Choi , Tae Sung Jang , Jong Gun Woo
IPC分类号： H01L21/56
CPC分类号： H01L33/22 , H01L33/0079 , H01L33/20
摘要： A vertical nitride-based semiconductor LED comprises a structure support layer; a p-electrode formed on the structure support layer; a p-type nitride semiconductor layer formed on the p-electrode; an active layer formed on the p-type nitride semiconductor layer; an n-type nitride semiconductor layer formed on the active layer; an n-electrode formed on a portion of the n-type nitride semiconductor layer; and a buffer layer formed on a region of the n-type nitride semiconductor layer on which the n-electrode is not formed, the buffer layer having irregularities formed thereon. The surface of the n-type nitride semiconductor layer coming in contact with the n-electrode is flat.
摘要翻译：垂直氮化物基半导体LED包括结构支撑层; 形成在结构支撑层上的p电极; 形成在p电极上的p型氮化物半导体层; 形成在p型氮化物半导体层上的有源层; 形成在有源层上的n型氮化物半导体层; 形成在n型氮化物半导体层的一部分上的n电极; 以及形成在其上未形成有n电极的n型氮化物半导体层的区域上的缓冲层，其上形成有凹凸。与n电极接触的n型氮化物半导体层的表面是平坦的。

9. 发明申请

US20090181485A1 METHOD OF MANUFACTURING VERTICAL GALLIUM-NITRIDE BASED LIGHT EMITTING DIODE 有权
标题翻译：立方氮化镓基发光二极管的制造方法
公开(公告)号：US20090181485A1
公开(公告)日：2009-07-16
申请号：US12406540
申请日：2009-03-18
申请人： Doo Go BAIK , Bang Won Oh , Seok Beom Choi , Su Yeo Lee
发明人： Doo Go BAIK , Bang Won Oh , Seok Beom Choi , Su Yeo Lee
IPC分类号： H01L21/20
CPC分类号： H01L33/14 , H01L33/02 , H01L33/32
摘要： A vertical GaN-based LED and a method of manufacturing the same are provided. The vertical GaN-based LED can prevent the damage of an n-type GaN layer contacting an n-type electrode, thereby stably securing the contact resistance of the n-electrode. The vertical GaN-based LED includes: a support layer; a p-electrode formed on the support layer; a p-type GaN layer formed on the p-electrode; an active layer formed on the p-type GaN layer; an n-type GaN layer for an n-type electrode contact, formed on the active layer; an etch stop layer formed on the n-type GaN layer to expose a portion of the n-type GaN layer; and an n-electrode formed on the n-type GaN layer exposed by the etch stop layer.
摘要翻译：提供了一种垂直GaN基LED及其制造方法。垂直GaN基LED可以防止与n型电极接触的n型GaN层的损坏，从而稳定地确保n电极的接触电阻。垂直GaN基LED包括：支承层; 形成在支撑层上的p电极; 形成在p电极上的p型GaN层; 形成在p型GaN层上的有源层; 在有源层上形成用于n型电极接触的n型GaN层; 形成在所述n型GaN层上以暴露所述n型GaN层的一部分的蚀刻停止层; 以及形成在由蚀刻停止层露出的n型GaN层上的n电极。

10. 发明授权

US08198114B2 Vertical nitride semiconductor light emitting diode and method of manufacturing the same 有权
标题翻译：垂直氮化物半导体发光二极管及其制造方法
公开(公告)号：US08198114B2
公开(公告)日：2012-06-12
申请号：US12909297
申请日：2010-10-21
申请人： Sang Ho Yoon , Su Yeol Lee , Doo Go Baik , Seok Beom Choi , Tae Sung Jang , Jong Gun Woo
发明人： Sang Ho Yoon , Su Yeol Lee , Doo Go Baik , Seok Beom Choi , Tae Sung Jang , Jong Gun Woo
IPC分类号： H01L21/56
CPC分类号： H01L33/22 , H01L33/0079 , H01L33/20
摘要： A vertical nitride-based semiconductor LED comprises a structure support layer; a p-electrode formed on the structure support layer; a p-type nitride semiconductor layer formed on the p-electrode; an active layer formed on the p-type nitride semiconductor layer; an n-type nitride semiconductor layer formed on the active layer; an n-electrode formed on a portion of the n-type nitride semiconductor layer; and a buffer layer formed on a region of the n-type nitride semiconductor layer on which the n-electrode is not formed, the buffer layer having irregularities formed thereon. The surface of the n-type nitride semiconductor layer coming in contact with the n-electrode is flat.
摘要翻译：垂直氮化物基半导体LED包括结构支撑层; 形成在结构支撑层上的p电极; 形成在p电极上的p型氮化物半导体层; 形成在p型氮化物半导体层上的有源层; 形成在有源层上的n型氮化物半导体层; 形成在n型氮化物半导体层的一部分上的n电极; 以及形成在其上未形成有n电极的n型氮化物半导体层的区域上的缓冲层，其上形成有凹凸。与n电极接触的n型氮化物半导体层的表面是平坦的。

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