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    • 15. 发明申请
    • Two-dimensional photonic crystal LED
    • 二维光子晶体LED
    • US20070158662A1
    • 2007-07-12
    • US11640837
    • 2006-12-19
    • Dai OhnishiSusumu Noda
    • Dai OhnishiSusumu Noda
    • H01L33/00
    • H01L33/24H01L33/0095H01L33/20H01L2933/0083
    • A two-dimensional photonic crystal LED composed of a p-type semiconductor cladding layer 12, an active layer 11 of light-emitting material, and an n-type semiconductor cladding layer 13 placed between a pair of electrodes, where air holes 16 penetrating through the layers 12, 11 and 13 and arranged periodically in the layers 12, 11 and 13 are provided. At least a part of the inner wall of the air holes 16 is oxidized 17 in either one or both of the p-type semiconductor cladding layer 12 and the n-type semiconductor cladding layer 13. The holes and electrons injected from the electrodes avoid the oxidized region 17 and enter the active layer 11 apart from the air holes 16, which minimizes the recombination (surface recombination) of the holes and electrons producing heat instead of light.
    • 由p型半导体包层12,发光材料的有源层11和放置在一对电极之间的n型半导体包层13构成的二维光子晶体LED,其中气孔16穿透 设置层12,11和13并周期性地布置在层12,11和13中。 空气孔16的内壁的至少一部分在p型半导体包覆层12和n型半导体包层13中的任一个或两个中被氧化17。从电极注入的空穴和电子避免了 氧化区17并且进入与气孔16分开的有源层11,这使空穴和产生热而不是光的电子的复合(表面复合)最小化。
    • 17. 发明申请
    • MULTI-BEAM SEMICONDUCTOR LASER APPARATUS
    • 多光子半导体激光装置
    • US20120243569A1
    • 2012-09-27
    • US13429147
    • 2012-03-23
    • Yoshinori TANAKAEiji MIYAIDai OHNISHI
    • Yoshinori TANAKAEiji MIYAIDai OHNISHI
    • H01S5/02
    • H01S5/4031H01S5/0425H01S5/209H01S5/2231H01S2301/17H01S2301/176
    • A multi-beam semiconductor laser apparatus includes three or more stripe semiconductor laser emission units which are arranged on a substrate, isolation grooves which separate the semiconductor laser emission units from each other, and pad electrodes which are disposed on outer sides of the outermost semiconductor laser emission units. The isolation grooves are formed between the pad electrodes and the semiconductor laser emission units adjacent to the pad electrodes and between adjacent semiconductor laser emission units. A distance between two isolation grooves formed on outer sides of the outermost semiconductor laser light emission units is smaller than a distance between two isolation grooves formed on both sides of inner ones of the semiconductor laser light emission units.
    • 多光束半导体激光装置包括:三个以上的条状半导体激光发射单元,其设置在基板上,将半导体激光发射单元彼此分隔开的隔离沟槽和设置在最外侧半导体激光器的外侧的焊盘电极 排放单位。 隔离槽形成在焊盘电极与邻近焊盘电极的相邻半导体激光发射单元之间的半导体激光发射单元之间。 形成在最外侧半导体激光发射单元的外侧的两个隔离槽之间的距离小于形成在半导体激光发射单元的内侧两侧的两个隔离槽之间的距离。
    • 20. 发明授权
    • Surface plasmon resonance sensor and biochip
    • 表面等离子体共振传感器和生物芯片
    • US07671996B2
    • 2010-03-02
    • US12206022
    • 2008-09-08
    • Daisuke NiwaDai Ohnishi
    • Daisuke NiwaDai Ohnishi
    • G01N21/00
    • G01N21/553G01N21/554G01N21/7703
    • The present invention relates to a surface plasmon resonance sensor which has a first dielectric layer, a metal layer disposed on the first dielectric layer, and a second dielectric layer covering the metal layer. The surface plasmon resonance sensor includes: a sensor main body provided with an opening for exposing a part of a surface of the metal layer on a side facing the second dielectric layer, and for allowing a measurement sample to be brought into contact with this surface; a light source for introducing a beam into the metal layer from one end of the metal layer in a longitudinal direction of the metal layer; and a detection unit detecting a beam emitted from the other end of the metal layer, has high sensitivity in measurement, is downsized, and is usable in a simple manner.
    • 表面等离子体共振传感器本发明涉及一种表面等离子体共振传感器,其具有第一电介质层,设置在第一电介质层上的金属层和覆盖该金属层的第二电介质层。 所述表面等离子体共振传感器包括:传感器主体,其设置有用于暴露所述金属层的面对所述第二介电层的一侧表面的一部分的开口,并且用于使所述测量样品与所述表面接触; 用于从所述金属层的所述金属层的纵向方向的一端引入光束到所述金属层的光源; 检测从金属层的另一端发射的光束的检测单元,测量灵敏度高,尺寸小,可以简单的使用。