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1. 发明申请

US20120243569A1 MULTI-BEAM SEMICONDUCTOR LASER APPARATUS 有权
标题翻译：多光子半导体激光装置
公开(公告)号：US20120243569A1
公开(公告)日：2012-09-27
申请号：US13429147
申请日：2012-03-23
申请人： Yoshinori TANAKA , Eiji MIYAI , Dai OHNISHI
发明人： Yoshinori TANAKA , Eiji MIYAI , Dai OHNISHI
IPC分类号： H01S5/02
CPC分类号： H01S5/4031 , H01S5/0425 , H01S5/209 , H01S5/2231 , H01S2301/17 , H01S2301/176
摘要： A multi-beam semiconductor laser apparatus includes three or more stripe semiconductor laser emission units which are arranged on a substrate, isolation grooves which separate the semiconductor laser emission units from each other, and pad electrodes which are disposed on outer sides of the outermost semiconductor laser emission units. The isolation grooves are formed between the pad electrodes and the semiconductor laser emission units adjacent to the pad electrodes and between adjacent semiconductor laser emission units. A distance between two isolation grooves formed on outer sides of the outermost semiconductor laser light emission units is smaller than a distance between two isolation grooves formed on both sides of inner ones of the semiconductor laser light emission units.
摘要翻译：多光束半导体激光装置包括：三个以上的条状半导体激光发射单元，其设置在基板上，将半导体激光发射单元彼此分隔开的隔离沟槽和设置在最外侧半导体激光器的外侧的焊盘电极排放单位。隔离槽形成在焊盘电极与邻近焊盘电极的相邻半导体激光发射单元之间的半导体激光发射单元之间。形成在最外侧半导体激光发射单元的外侧的两个隔离槽之间的距离小于形成在半导体激光发射单元的内侧两侧的两个隔离槽之间的距离。

2. 发明申请

US20130039375A1 PHOTONIC CRYSTAL SURFACE EMISSION LASER 有权
标题翻译：光电晶体表面发射激光
公开(公告)号：US20130039375A1
公开(公告)日：2013-02-14
申请号：US13571985
申请日：2012-08-10
申请人： Susumu NODA , Seita IWAHASHI , Toshiyuki NOBUOKA , Takui SAKAGUCHI , Eiji MIYAI , Wataru KUNISHI , Dai OHNISHI , Kazuya NAGASE , Yoshikatsu MIURA
发明人： Susumu NODA , Seita IWAHASHI , Toshiyuki NOBUOKA , Takui SAKAGUCHI , Eiji MIYAI , Wataru KUNISHI , Dai OHNISHI , Kazuya NAGASE , Yoshikatsu MIURA
IPC分类号： H01S5/18
CPC分类号： H01S5/105 , H01S5/0425 , H01S5/18
摘要： A photonic crystal surface emission laser includes an active layer, and a photonic crystal layer made of a plate-shaped slab provided with modified refractive index area having a refractive index different from that of the slab, the modified refractive index areas being arranged on each of the lattice points of a first rhombic-like lattice and a second rhombic-like lattice in which both diagonals are mutually parallel and only one diagonal is of a different length, wherein ax1, ax2, ay, and n satisfy the following inequality:  1 a x   1 - 1 a x   2  ( 1 a x   1 + 1 a x   2 ) 2 + ( 2 a y ) 2 ≤ 1 n .
摘要翻译：光子晶体表面发射激光器包括有源层和由具有折射率不同于板的折射率区域的具有改性折射率区域的板状板制成的光子晶体层，所述改性折射率区域被布置在两个对角线相互平行且只有一个对角线具有不同长度的第一菱形晶格和第二菱形晶格的晶格点，其中ax1，ax2，ay和n满足以下不等式：1 （1斧1 + 1斧2）2 +（2 ay）2≤1 n。

3. 发明申请

US20100067016A1 Plasmon resonance detector 有权
标题翻译：等离子体共振检测器
公开(公告)号：US20100067016A1
公开(公告)日：2010-03-18
申请号：US12318109
申请日：2008-12-22
申请人： Kosei UENO , Hiroaki MISAWA , Dai OHNISHI , Takui SAKAGUCHI , Yoichi MUGINO
发明人： Kosei UENO , Hiroaki MISAWA , Dai OHNISHI , Takui SAKAGUCHI , Yoichi MUGINO
IPC分类号： G01N21/55 , G01K7/02
CPC分类号： G01J5/20 , G01J5/02 , G01J5/023 , G01J5/08 , G01J5/0853
摘要： Provided is a plasmon resonance detector that can detect temperature change in optical devices, in which the metal structure having plasmon resonance absorption is used for the optical devices. A diode formed of a conductive substrate, an n-type semiconductor layer, an i-type semiconductor layer, a p-type semiconductor layer, an n electrode (negative electrode), a p electrode (positive electrode), an insulating film, or the like is used as a semiconductor device whose resistance value changes in accordance with temperature change. A nanochain formed by connecting a plurality of metal nanoparticles is disposed on this diode. When the nanochain is irradiated with light, the nanochain generates heat. The heat generated in the nanochain is conducted to the diode. The resistance value of the diode changes in accordance with temperature change, and thus this change is read, a temperature or an amount of heat generation of the nanochain is measured, and existence and strength of the plasmon resonance are detected.
摘要翻译：提供了一种等离子体共振检测器，其可以检测具有等离子体共振吸收的金属结构用于光学器件的光学器件中的温度变化。由导电性基板，n型半导体层，i型半导体层，p型半导体层，n电极（负极），ap电极（正极），绝缘膜或类似物被用作其电阻值根据温度变化而变化的半导体器件。通过连接多个金属纳米颗粒形成的纳米链设置在该二极管上。当纳米链被光照射时，纳米链产生热量。在纳米链中产生的热量传导到二极管。二极管的电阻值根据温度变化而变化，因此读取该变化，测定纳米级的发热温度或发热量，检测等离子体共振的存在和强度。

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