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11. 发明申请

WO2011066097A9 VARIABLE PENETRATION DEPTH BIOSENSOR AND METHODS 审中-公开
标题翻译：可变渗透深度生物传感器和方法
公开(公告)号：WO2011066097A9
公开(公告)日：2011-08-04
申请号：PCT/US2010055950
申请日：2010-11-09
申请人： CORNING INC , COUILLARD JAMES G , FONTAINE NORMAN H , LAHIRI JOYDEEP , LI GUANGSHAN , LIU ANPING , PENG JINLIN , WALTON DONNELL T
发明人： COUILLARD JAMES G , FONTAINE NORMAN H , LAHIRI JOYDEEP , LI GUANGSHAN , LIU ANPING , PENG JINLIN , WALTON DONNELL T
IPC分类号： G02B6/00
CPC分类号： G01N21/553
摘要： A surface plasmon resonance sensor system including a high refractive index prism, a sensor chip, a light source having multiple wavelengths over a broad range of wavelengths, optical lenses, a photodetector, a data acquisition unit, and as defined herein. The sensor chip can include, for example, a thin layer of silicon and gold on one face of a transparent substrate and the prism adjacent to the opposite face of the transparent substrate. Such an arrangement provides variable penetration depths up to about 1.5 micrometers with a dynamic range for sensing index of refraction changes in a sample that are several times greater than that of a conventional SPR sensor. The disclosure provides methods for using the surface plasmon resonance sensor system for cell assay or chemical assay related applications.
摘要翻译：一种表面等离子体共振传感器系统，包括高折射率棱镜，传感器芯片，在宽波长范围内具有多个波长的光源，光学透镜，光电检测器，数据采集单元，如本文所定义。传感器芯片例如可以包括在透明基板的一个面上的硅和金的薄层和邻近透明基板的相对面的棱镜。这种布置提供高达约1.5微米的可变穿透深度，具有用于感测样品中的折射改变的动态范围，其比常规SPR传感器的折射数倍大几倍。本公开提供了使用表面等离子体共振传感器系统用于细胞测定或化学测定相关应用的方法。

12. 发明申请

WO2011066097A1 VARIABLE PENETRATION DEPTH BIOSENSOR AND METHODS 审中-公开
标题翻译：可变穿透深度生物传感器和方法
公开(公告)号：WO2011066097A1
公开(公告)日：2011-06-03
申请号：PCT/US2010/055950
申请日：2010-11-09
申请人： CORNING INCORPORATED , COUILLARD, James G , FONTAINE, Norman H , LAHIRI, Joydeep , LI, Guangshan , LIU, Anping , PENG, Jinlin , WALTON, Donnell T
发明人： COUILLARD, James G , FONTAINE, Norman H , LAHIRI, Joydeep , LI, Guangshan , LIU, Anping , PENG, Jinlin , WALTON, Donnell T
IPC分类号： G02B6/00
CPC分类号： G01N21/553
摘要： A surface plasmon resonance sensor system including a high refractive index prism, a sensor chip, a light source having multiple wavelengths over a broad range of wavelengths, optical lenses, a photodetector, a data acquisition unit, and as defined herein. The sensor chip can include, for example, a thin layer of silicon and gold on one face of a transparent substrate and the prism adjacent to the opposite face of the transparent substrate. Such an arrangement provides variable penetration depths up to about 1.5 micrometers with a dynamic range for sensing index of refraction changes in a sample that are several times greater than that of a conventional SPR sensor. The disclosure provides methods for using the surface plasmon resonance sensor system for cell assay or chemical assay related applications.
摘要翻译：表面等离子体共振传感器系统包括高折射率棱镜，传感器芯片，在宽波长范围内具有多个波长的光源，光学透镜，光电探测器，数据采集单元和如本文所定义的。传感器芯片可以包括例如在透明基板的一个面上的硅和金的薄层以及与透明基板的相对面相邻的棱镜。这样的布置提供了可变的穿透深度达约1.5微米，并具有用于感测样本中的折射率变化的动态范围，其比传统的SPR传感器的折射率的数倍大。本公开提供了使用表面等离子体共振传感器系统进行细胞测定或化学测定相关应用的方法。

13. 发明申请

WO2011025761A1 SEMICONDUCTOR ON INSULATOR AND METHODS OF FORMING SAME USING TEMPERATURE GRADIENT IN AN ANODIC BONDING PROCESS 审中-公开
标题翻译：绝缘子半导体及其在阳极结合工艺中使用温度梯度成型的方法
公开(公告)号：WO2011025761A1
公开(公告)日：2011-03-03
申请号：PCT/US2010/046436
申请日：2010-08-24
申请人： COUILLARD, James G. , CORNING INCORPORATED
发明人： COUILLARD, James G.
IPC分类号： H01L21/762
CPC分类号： H01L21/76254 , H01L21/76251
摘要： Methods and apparatus for producing a semiconductor on glass (SOG) structure include: bringing a first surface of a glass substrate into direct or indirect contact with a semiconductor wafer; heating at least one of the glass substrate and the semiconductor wafer such that a second surface of the glass substrate, opposite to the first surface thereof, is at a lower temperature than the first surface; applying a voltage potential across the glass substrate and the semiconductor wafer; and maintaining the contact, heating and voltage to induce an anodic bond between the semiconductor wafer and the glass substrate via electrolysis.
摘要翻译：用于制造玻璃（SOG）结构的半导体的方法和装置包括：使玻璃基板的第一表面与半导体晶片直接或间接接触; 加热玻璃基板和半导体晶片中的至少一个，使得与其第一表面相对的玻璃基板的第二表面处于比第一表面更低的温度; 在玻璃基板和半导体晶片上施加电压电位; 并且通过电解保持接触，加热和电压以在半导体晶片和玻璃基板之间引起阳极结合。

14. 发明申请

WO2010059361A3 METHODS AND APPARATUS FOR PRODUCING SEMICONDUCTOR ON INSULATOR STRUCTURES USING DIRECTED EXFOLIATION 审中-公开
标题翻译：使用直接去除法在绝缘体结构上制造半导体的方法和设备
公开(公告)号：WO2010059361A3
公开(公告)日：2010-08-12
申请号：PCT/US2009062504
申请日：2009-10-29
申请人： CORNING INC , CHEREKDJIAN SARKO , CITES JEFFREY S , COUILLARD JAMES G , MASCHMEYER RICHARD O , MOORE MICHAEL J , USENKO ALEX
发明人： CHEREKDJIAN SARKO , CITES JEFFREY S , COUILLARD JAMES G , MASCHMEYER RICHARD O , MOORE MICHAEL J , USENKO ALEX
IPC分类号： H01L21/762
CPC分类号： H01L21/76254
摘要： Methods and apparatus provide for forming a semiconductor-on-insulator (SOI) structure, including subjecting a implantation surface of a donor semiconductor wafer to an ion implantation step to create a weakened slice in cross-section defining an exfoliation layer of the donor semiconductor wafer; and subjecting the donor semiconductor wafer to a spatial variation step, either before, during or after the ion implantation step, such that at least one parameter of the weakened slice varies spatially across the weakened slice in at least one of X- and Y- axial directions.
摘要翻译：提供了用于形成绝缘体上半导体（SOI）结构的方法和设备，其包括使施主半导体晶片的注入表面经受离子注入步骤以在限定供体半导体晶片的剥离层的横截面中产生弱化层 ; 以及在所述离子注入步骤之前，期间或之后使所述施主半导体晶片经历空间变化步骤，使得所述弱化层的至少一个参数在X轴和Y轴中的至少一个中在所述弱化层上在空间上变化方向。

15. 发明申请

WO2005010964A3 SILICON CRYSTALLIZATION USING SELF-ASSEMBLED MONOLAYERS 审中-公开
标题翻译：使用自组装单晶的硅晶体化
公开(公告)号：WO2005010964A3
公开(公告)日：2005-10-06
申请号：PCT/US2004019946
申请日：2004-06-22
申请人： CORNING INC , COUILLARD JAMES G , HANCOCK ROBERT R JR , LEWIS MARK A
发明人： COUILLARD JAMES G , HANCOCK ROBERT R JR , LEWIS MARK A
IPC分类号： C03C17/34 , C03C17/42 , C23C16/02 , C30B25/02 , C30B25/18 , H01L21/20 , H01L21/205
CPC分类号： C03C17/3657 , B82Y30/00 , B82Y40/00 , C03C17/3429 , C03C17/3482 , C03C17/42 , C03C2218/152 , C03C2218/32 , C23C16/0272 , C30B25/18 , C30B29/06 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/0262 , H01L21/02658 , H01L21/02667
摘要： A display device comprises a substrate having a layer of crystalline or polycrystalline semiconductor material disposed over the substrate, wherein the substrate has a strain point that is lower than a forming temperature of the layer. The crystalline or polycrystalline material is fabricated by a method that includes providing a self-assembled monolayer (SAM) over the substrate, depositing a layer of material over the SAM, and substantially crystallizing the layer.
摘要翻译：一种显示装置包括具有设置在衬底上方的晶体或多晶半导体材料层的衬底，其中衬底具有低于层的形成温度的应变点。该结晶或多晶材料通过包括在衬底上提供自组装单层（SAM），在SAM上沉积材料层并使该层基本结晶的方法来制造。

16. 发明申请

WO2005043585A3 OLED STRUCTURES WITH BARRIER LAYER AND STRAIN RELIEF 审中-公开
标题翻译： OLED结构与障碍层和应变消除
公开(公告)号：WO2005043585A3
公开(公告)日：2005-09-29
申请号：PCT/US2004032645
申请日：2004-10-01
申请人： CORNING INC , COUILLARD JAMES G
发明人： COUILLARD JAMES G
IPC分类号： H01L51/52 , H01L51/20 , H01L51/40
CPC分类号： H01L51/5253 , H01L51/52 , H01L2251/5338
摘要： An OLED structure includes a substantially flexible substrate, and at least one barrier layer disposed between the substrate and the OLED structure. The barrier layer substantially prevents contaminants from permeating a layer of organic material or the OLED structure. The barrier layer includes a glass layer that has certain components added or removed to improve its flexibility. The OLED structure may also include a substantially flexible substrate and at least one barrier layer disposed between the substrate and the OLED structure. The barrier layer includes a strain relief material. The strain relief material advantageously has at least one axis of orientation. Photonic or electronic components, or both could be substituted for the OLED.
摘要翻译： OLED结构包括基本上柔性的衬底，以及设置在衬底和OLED结构之间的至少一个势垒层。阻挡层基本上防止污染物渗入有机材料层或OLED结构。阻挡层包括具有添加或去除某些组分以提高其柔性的玻璃层。 OLED结构还可以包括基本上柔性的衬底和设置在衬底和OLED结构之间的至少一个势垒层。阻挡层包括应变消除材料。应变消除材料有利地具有至少一个取向轴。光子或电子元件，或两者都可以代替OLED。

17. 发明申请

WO2005029576A3 GLASS-BASED SOI STRUCTURES 审中-公开
公开(公告)号：WO2005029576A3
公开(公告)日：2005-03-31
申请号：PCT/US2004/004746
申请日：2004-02-17
申请人： CORNING INCORPORATED , COUILLARD, James G , MACH, Joseph F , GADKAREE, Kishor P
发明人： COUILLARD, James G , MACH, Joseph F , GADKAREE, Kishor P
IPC分类号： H01L21/762
摘要： Semiconductor-on-insulator (SOI) structures, including large area SOI structures, are provided which have one or more regions composed of a layer (15) of a substantially single-crystal semiconductor (e.g., doped silicon) attached to a support substrate (20) composed of an oxide glass or an oxide glass-ceramic. The oxide glass or oxide glass-ceramic is preferably transparent and preferably has a strain point of less than 1000°C, a resistivity at 250°C that is less than or equal to 1016 -cm, and contains positive ions (e.g., alkali or alkaline-earth ions) which can move within the glass or glass-ceramic in response to an electric field at elevated temperatures (e.g., 300-1000°C). The bond strength between the semiconductor layer (15) and the support substrate (20) is preferably at least 8 joules/meter2. The semiconductor layer (15) can include a hybrid region (16) in which the semiconductor material has reacted with oxygen ions originating from the glass or glass-ceramic. The support substrate (20) preferably includes a depletion region (23) which has a reduced concentration of the mobile positive ions.

18. 发明申请

WO2005010964A2 SILICON CRYSTALLIZATION USING SELF-ASSEMBLED MONOLAYERS 审中-公开
标题翻译：使用自组装单层的硅结晶
公开(公告)号：WO2005010964A2
公开(公告)日：2005-02-03
申请号：PCT/US2004/019946
申请日：2004-06-22
申请人： CORNING INCORPORATED , COUILLARD, James G , HANCOCK, Robert R. Jr. , LEWIS, Mark A
发明人： COUILLARD, James G , HANCOCK, Robert R. Jr. , LEWIS, Mark A
IPC分类号： H01L21/20
CPC分类号： C03C17/3657 , B82Y30/00 , B82Y40/00 , C03C17/3429 , C03C17/3482 , C03C17/42 , C03C2218/152 , C03C2218/32 , C23C16/0272 , C30B25/18 , C30B29/06 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/0262 , H01L21/02658 , H01L21/02667
摘要： A display device comprises a substrate having a layer of crystalline or polycrystalline semiconductor material disposed over the substrate, wherein the substrate has a strain point that is lower than a forming temperature of the layer. The crystalline or polycrystalline material is fabricated by a method that includes providing a self-assembled monolayer (SAM) over the substrate, depositing a layer of material over the SAM, and substantially crystallizing the layer.
摘要翻译：显示装置包括具有设置在衬底上的结晶或多晶半导体材料层的衬底，其中衬底具有低于该层的形成温度的应变点。晶体或多晶材料通过包括在衬底上提供自组装单层（SAM），在SAM上沉积材料层并使层基本上结晶的方法来制造。

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