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131. 发明申请

US20060108526A1 Apparatus for measuring a three-dimensional shape 有权
标题翻译：用于测量三维形状的装置
公开(公告)号：US20060108526A1
公开(公告)日：2006-05-25
申请号：US11320752
申请日：2005-12-30
申请人： Maki Tanaka , Chie Shishido , Yuji Takagi
发明人： Maki Tanaka , Chie Shishido , Yuji Takagi
IPC分类号： G21K7/00
CPC分类号： G01N23/225 , G01N23/2251 , H01J37/244 , H01J37/3171 , H01J2237/2814 , H01L21/32137 , H01L22/10 , H01L2924/0002 , H01L2924/00
摘要： Conventionally, there is no method for quantitatively evaluating the three-dimensional shape of an etched pattern in a non-destructive manner and it takes much time and costs to determine etching conditions. With the conventional length measuring method only, it has been impossible to detect an abnormality in the three-dimensional shape and also difficult to control the etching process. According to the present invention, variations in signal amounts of an SEM image are utilized to compute three-dimensional shape data on the pattern associated with the etching process steps, whereby the three-dimensional shape is quantitatively evaluated. Besides, determination of etching process conditions and process control are performed based on the three-dimensional shape data obtained. The present invention makes it is possible to quantitatively evaluate the three-dimensional shape of the etched pattern in a non-destructive manner. Further, the efficiency of determining the etching process conditions and a stable etching process can be realized.
摘要翻译：通常，没有以非破坏性的方式定量地评价蚀刻图案的三维形状的方法，并且确定蚀刻条件需要花费大量时间和成本。仅使用常规的长度测量方法，就不可能检测到三维形状的异常，并且也难以控制蚀刻工艺。根据本发明，利用SEM图像的信号量的变化来计算与蚀刻工艺步骤相关联的图案上的三维形状数据，从而定量评估三维形状。此外，基于获得的三维形状数据进行蚀刻工艺条件和工艺控制的确定。本发明能够以非破坏性的方式对蚀刻图案的三维形状进行定量评价。此外，可以实现确定蚀刻工艺条件的效率和稳定的蚀刻工艺。

132. 发明申请

US20060038987A1 Defect inspection method and apparatus 有权
标题翻译：缺陷检查方法和装置
公开(公告)号：US20060038987A1
公开(公告)日：2006-02-23
申请号：US11204181
申请日：2005-08-16
申请人： Shunji Maeda , Kenji Oka , Yukihiro Shibata , Minoru Yoshida , Chie Shishido , Yuji Takagi , Atsushi Yoshida , Kazuo Yamaguchi
发明人： Shunji Maeda , Kenji Oka , Yukihiro Shibata , Minoru Yoshida , Chie Shishido , Yuji Takagi , Atsushi Yoshida , Kazuo Yamaguchi
IPC分类号： G01N21/88
CPC分类号： G06T7/001 , G01N21/9501 , G01N21/95607 , G06T7/0004 , G06T2207/30148
摘要： A method of inspecting defects of a plurality of patterns that are formed on a substrate to have naturally the same shape. According to this method, in order to detect very small defects of the patterns with high sensitivity without being affected by irregular brightness due to the thickness difference between the patterns formed on a semiconductor wafer, a first pattern being inspected is detected to produce a first image of the first pattern, the first image is stored, a second pattern being inspected is detected to produce a second image of said second pattern, the stored first image and the second image are matched in brightness, and the brightness-matched first and second images are compared with each other so that the patterns can be inspected.
摘要翻译：检查在基板上形成的具有自然相同形状的多个图案的缺陷的方法。根据该方法，为了以高灵敏度检测图案的非常小的缺陷，不受由于在半导体晶片上形成的图案之间的厚度差而引起的不规则亮度的影响，检测出被检查的第一图案以产生第一图像第一图案被存储，检测出被检查的第二图案以产生所述第二图案的第二图像，所存储的第一图像和第二图像的亮度相匹配，并且亮度匹配的第一和第二图像彼此进行比较，从而可以检查图案。

133. 发明授权

US06965429B2 Method of reviewing detected defects 有权
标题翻译：检查检测到的缺陷的方法
公开(公告)号：US06965429B2
公开(公告)日：2005-11-15
申请号：US10224087
申请日：2002-08-19
申请人： Toshifumi Honda , Yuji Takagi , Hirohito Okuda
发明人： Toshifumi Honda , Yuji Takagi , Hirohito Okuda
IPC分类号： G01B11/30 , G01N21/95 , G01N21/956 , G06T1/00 , H01L21/66 , G01N21/00
CPC分类号： G01N21/9501 , G01N21/956
摘要： A method to solve the problem of a technique generally used to detect a defect of a semiconductor by calculating the differential image based on pattern matching, which requires that a reference image must be picked up to pick up an image of the inspection position in an area with the semiconductor pattern having no periodicity, resulting in a low throughput. The image of the inspection position is divided into local areas, each local area is matched with the local area of the image already stored and the difference between the local areas thus matched is determined to extract area.
摘要翻译：一种解决通常用于通过基于图案匹配计算差分图像来检测半导体缺陷的技术的问题的方法，其要求必须拾取参考图像以在区域中拾取检查位置的图像半导体图案没有周期性，导致低的生产量。检查位置的图像被划分为局部区域，每个局部区域与已经存储的图像的局部区域匹配，并且确定如此匹配的局部区域之间的差异来提取区域。

134. 发明申请

US20050211325A1 Composite hose with a corrugated metal tube 失效
标题翻译：带波纹金属管的复合软管
公开(公告)号：US20050211325A1
公开(公告)日：2005-09-29
申请号：US11086705
申请日：2005-03-22
申请人： Yuji Takagi , Minoru Hiramatsu
发明人： Yuji Takagi , Minoru Hiramatsu
IPC分类号： F16L11/11 , B32B1/08 , F16L9/00 , F16L9/14 , F16L11/00 , F16L11/08 , F16L11/10 , F16L11/14 , F16L11/15 , F16L11/20
CPC分类号： F16L11/15 , F16L11/085 , F16L11/086
摘要： A composite hose comprises a corrugated metal tube as barrier layer against permeation of conveyed fluid and a reinforcing layer which is formed by braiding a reinforcing wire member made of a metal wire. A braid density of the reinforcing layer is 55% or less.
摘要翻译：复合软管包括波纹金属管，作为防止输送流体渗透的阻挡层，以及通过编织由金属线制成的增强线构成的增强层。加强层的编织密度为55％以下。

135. 发明申请

US20050211324A1 Composite hose with a corrugated metal tube 失效
标题翻译：带波纹金属管的复合软管
公开(公告)号：US20050211324A1
公开(公告)日：2005-09-29
申请号：US11070589
申请日：2005-03-02
申请人： Yuji Takagi , Minoru Hiramatsu
发明人： Yuji Takagi , Minoru Hiramatsu
IPC分类号： F16L11/11 , F16L9/14 , F16L11/00 , F16L11/115 , F16L11/12 , F16L11/20
CPC分类号： F16L11/15 , F16L2011/047
摘要： A composite hose is provided with a corrugated metal tube of an inner layer and rubber filler which is filled in valley gaps between corrugation hills on an outer peripheral side of the corrugated metal tube. A tubular hard resin layer is further provided as cover layer on an outer side of the corrugated metal tube in order to enclose the rubber filler within the valley gaps to prevent the rubber filler from escaping radially outwardly.
摘要翻译：复合软管设置有内层的波纹金属管和橡胶填料，其填充在波纹状金属管的外周侧上的波纹丘陵之间的谷间隙中。在波纹状金属管的外侧还设置管状硬质树脂层作为覆盖层，以将橡胶填料包围在谷间隙内，以防止橡胶填料径向向外逸出。

136. 发明申请

US20050116182A1 Method of measuring pattern dimension and method of controlling semiconductor device process 有权
标题翻译：测量图案尺寸的方法和半导体器件工艺的控制方法
公开(公告)号：US20050116182A1
公开(公告)日：2005-06-02
申请号：US10986910
申请日：2004-11-15
申请人： Maki Tanaka , Hidetoshi Morokuma , Chie Shishido , Yuji Takagi
发明人： Maki Tanaka , Hidetoshi Morokuma , Chie Shishido , Yuji Takagi
IPC分类号： G01B15/00 , G01B11/14 , G01N23/225 , H01J37/28 , H01J37/304 , H01L21/66
CPC分类号： H01J37/28 , H01J37/304 , H01J2237/2814 , H01J2237/2817 , H01J2237/30455
摘要： This invention provides a method of measuring semiconductor pattern dimensions capable of realizing a stable and highly precise pattern dimension measurement technique even when the pattern cross-sectional shapes are changed and making the calculation amount relatively small to reduce the calculation time. More specifically, the relationship between cross-sectional shapes of a pattern and measurement errors in a specified image processing technique is evaluated in advance by the electron beam simulation in a pattern measurement system in a length measuring SEM, and in the actual dimension measurement, dimensions of an evaluation objective pattern are measured from image signals of a scanning electron microscope, and errors of the dimensional measurement of the evaluation objective pattern are estimated and revised based on the relationship between cross-sectional shapes of a pattern and measurement errors evaluated in advance, thereby realizing highly precise measurement where dimensional errors depending on pattern solid shapes are eliminated.
摘要翻译：本发明提供一种测量半导体图案尺寸的方法，即使当图案截面形状改变并使计算量相对较小以减少计算时间时，也能够实现稳定且高度精确的图案尺寸测量技术。更具体地说，通过长度测量SEM中的图案测量系统中的电子束模拟预先评估图案的截面形状与特定图像处理技术中的测量误差之间的关系，并且在实际尺寸测量中，尺寸根据扫描电子显微镜的图像信号测量评价对象图案，并且基于预先评估的图案的截面形状和测量误差之间的关系来估计和修正评估对象图案的尺寸测量的误差，从而实现高精度测量，其中取消了取决于图形实心形状的尺寸误差。

137. 发明授权

US06870169B2 Method and apparatus for analyzing composition of defects 有权
标题翻译：分析缺陷组成的方法和装置
公开(公告)号：US06870169B2
公开(公告)日：2005-03-22
申请号：US10735575
申请日：2003-12-11
申请人： Kenji Obara , Yuji Takagi , Hisae Shibuya , Naoki Hosoya
发明人： Kenji Obara , Yuji Takagi , Hisae Shibuya , Naoki Hosoya
IPC分类号： G01N23/225 , G01Q30/02 , G01R31/26 , G06T7/00 , H01J37/147 , H01J37/252 , H01L21/66
CPC分类号： G06T7/0004 , G06T2207/30148
摘要： In order to be able to detect an irradiation position of an electron beam matching a defect position and conduct composition analysis of a defect with high precision and high efficiency, in the present invention, when a composition analysis target defect is selected and irradiation conditions of the electron beam are set for EDX analysis, a low-resolution reference image of low resolution is acquired using the electron beam at a defect corresponding position corresponding to the position of this defect on a chip in the vicinity of a target chip including defects, and a low-resolution defect image of the same low resolution is next acquired at the defect position of the target chip. Then, by comparing these low-resolution images, the defect position is acquired, the electron beam is slanted and irradiated on this defect position to acquire a composition spectrum of the defect.
摘要翻译：为了能够检测匹配缺陷位置的电子束的照射位置并且以高精度和高效率进行缺陷的组成分析，在本发明中，当选择组成分析目标缺陷并且电子束被设置用于EDX分析，使用电子束在与包括缺陷的目标芯片附近的芯片上的该缺陷的位置相对应的缺陷对应位置处采集低分辨率的低分辨率参考图像，并且接下来在目标芯片的缺陷位置获取相同低分辨率的低分辨率缺陷图像。然后，通过比较这些低分辨率图像，获取缺陷位置，电子束被倾斜并照射在该缺陷位置以获得缺陷的组成谱。

138. 发明申请

US20050048780A1 Apparatus for inspecting three dimensional shape of a specimen and method of watching an etching process using the same 有权
标题翻译：用于检查样本的三维形状的装置和使用其的观察蚀刻工艺的方法
公开(公告)号：US20050048780A1
公开(公告)日：2005-03-03
申请号：US10918381
申请日：2004-08-16
申请人： Maki Tanaka , Hidetoshi Morokuma , Chie Shishido , Yuji Takagi
发明人： Maki Tanaka , Hidetoshi Morokuma , Chie Shishido , Yuji Takagi
IPC分类号： G01N23/225 , G06T7/00 , H01L21/302 , H01L21/461 , H01L21/66
CPC分类号： G06T7/0004 , G01N23/225 , G01N2223/6116 , G06T2207/30148 , H01J2237/2814 , H01L22/12
摘要： A system for inspecting a pattern shape operates to detect secondary electrons from a specimen by irradiation of a focused electron beam and perform arithmetic processing on this detected signal. The detected signal waveform is divided into a plurality of regions on the basis of a variation of the signal quantity. The size of the divided regions is used for quantitative evaluation of a three dimensional shape of the specimen. This system, especially by displaying measurement results of the pattern shape for each divided signal waveform (bottom width in the final shape, resist bottom width, etching shift quantity, and etching slope-angle component by the exposure), permits an easy check on which a component varies and how the component varies in all shape variations. With this arrangement, a pattern cross section information effective in determining etching process conditions can be acquired using images by an in-line SEM capable of nondestructive observation.
摘要翻译：用于检查图案形状的系统用于通过照射聚焦电子束来检测来自样品的二次电子，并对该检测信号进行运算处理。检测信号波形根据信号量的变化被分成多个区域。分割区域的大小用于样本的三维形状的定量评估。该系统特别是通过显示每个分割信号波形（最终形状的底部宽度，抗蚀剂底部宽度，蚀刻偏移量和通过曝光的蚀刻倾斜角度分量）的图案形状的测量结果，可以容易地检查哪个一个组件变化，以及组件在所有形状变化中的变化。通过这种布置，可以通过能够进行非破坏性观察的直列SEM的图像来获取有效确定蚀刻工艺条件的图案横截面信息。

139. 发明授权

US06855930B2 Defect inspection apparatus and defect inspection method 有权
标题翻译：缺陷检查装置和缺陷检查方法
公开(公告)号：US06855930B2
公开(公告)日：2005-02-15
申请号：US10256585
申请日：2002-09-27
申请人： Hirohito Okuda , Yuji Takagi , Toshifumi Honda
发明人： Hirohito Okuda , Yuji Takagi , Toshifumi Honda
IPC分类号： G01N23/225 , G06T1/00 , H01L21/66 , G01N23/00
CPC分类号： G06T7/0004 , G01N23/225
摘要： An apparatus and a method for automatically inspecting a defect by an electron beam using an X-ray detector. The composition of a defective portion is analyzed with higher rapidity and the cause of the defect is easily and accurately determined based on an X-ray spectrum. The X-ray spectrum and the image of foreign particles formed on a process QC wafer are registered as reference data, and the defects generated on a process wafer are classified by collation with the reference data. The use of both the X-ray spectrum and the detected image optimizes the operating conditions for X-ray detection. A defect of which the X ray is to be detected is selected based on the result of classification of defect images automatically collected, and the defect is classified according to the features including both the composition and the external appearance.
摘要翻译：使用X射线检测器通过电子束自动检查缺陷的装置和方法。以更高的速度分析缺陷部分的组成，并且基于X射线光谱容易且准确地确定缺陷的原因。将X射线光谱和在过程QC晶片上形成的异物的图像作为参考数据进行登记，并且通过与参考数据进行核对对在处理晶片上产生的缺陷进行分类。使用X射线光谱和检测到的图像优化用于X射线检测的操作条件。基于自动收集的缺陷图像的分类结果来选择要检测X射线的缺陷，并且根据包括组成和外观的特征对缺陷进行分类。

140. 发明授权

US06756589B1 Method for observing specimen and device therefor 有权
标题翻译：观察标本及其装置的方法
公开(公告)号：US06756589B1
公开(公告)日：2004-06-29
申请号：US09743560
申请日：2001-01-09
申请人： Kenji Obara , Yuji Takagi , Atsushi Shimoda , Ryou Nakagaki , Seiji Isogai , Yasuhiko Ozawa , Hideka Banba , Kenji Watanabe , Chie Shishido
发明人： Kenji Obara , Yuji Takagi , Atsushi Shimoda , Ryou Nakagaki , Seiji Isogai , Yasuhiko Ozawa , Hideka Banba , Kenji Watanabe , Chie Shishido
IPC分类号： H01L2166
CPC分类号： H01J37/28 , G01N21/956 , G01N21/95692 , G01N2021/8867 , H01J2237/2817 , H01L22/12
摘要： During closer inspection with a local defect area being magnified, it is desirable to reduce image acquisition time by making the number of stage moves as few as possible so that a defect can be observed efficiently. To accomplish this, the invention offers a method of observing samples characterized by: acquiring a reference sample image not including any defect on a sample by capturing an image of the sample, based on the information on the defect developed on the sample and detected by an inspection apparatus; adjusting the position of the sample so that the defect will fall within the field of view of image capture, based on the above information; acquiring a defective sample image including the defect on the sample by capturing an image of the sample in the adjusted position; locating the defect on the defective sample image by comparing the reference sample image and the defective sample image; acquiring a magnified image of the defect by capturing a magnified view of the local area where the located defect exists within the field of view of image capture; and displaying the magnified image of the defect on a screen.
摘要翻译：在局部缺陷区域放大的仔细检查中，期望通过使台数移动尽可能少地减少图像获取时间，从而可以有效地观察到缺陷。为了实现这一点，本发明提供了一种观察样本的方法，其特征在于：基于在样品上形成的缺陷的信息，通过采集样本的检测信息来获取样本上不包括任何缺陷的参考样本图像，检验仪器; 基于上述信息，调整样本的位置使得缺陷落入图像捕获视野内; 通过在调整位置拍摄样本的图像来获取包含样本上的缺陷的缺陷样本图像; 通过比较参考样本图像和有缺陷的样本图像来定位缺陷样本图像上的缺陷; 通过在图像捕获视野内捕获定位缺陷的局部区域的放大视图来获取缺陷的放大图像; 并在屏幕上显示缺陷的放大图像。

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