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131. 发明专利

SG65744A1 Photoresist coating method and apparatus 未知
公开(公告)号：SG65744A1
公开(公告)日：1999-06-22
申请号：SG1998000636
申请日：1998-03-26
申请人： TOKYO ELECTRON LTD
发明人： YOSHIHARA KOSUKE
IPC分类号： G03F7/16 , H01L21/027 , B05C11/08 , B05D1/40
摘要： A resist coating method for forming a resist film on a substrate by supplying a resist solution to substantially a center of a substrate surface while the substrate is rotated, rotating the substrate at a low speed by decelerating the rotation of the substrate after the supply of the resist solution is terminated, and rotating the substrate at a high speed by accelerating the rotation of the substrate after the substrate is rotated at the low speed for a predetermined time-period.

132. 发明专利

JP2003145017A COATING METHOD AND COATING APPARATUS 审中-公开
公开(公告)号：JP2003145017A
公开(公告)日：2003-05-20
申请号：JP2001347271
申请日：2001-11-13
申请人： TOKYO ELECTRON LTD
发明人： YOSHIHARA KOSUKE , TAKEKUMA TAKASHI , FUKUDA YOSHITERU , FUJIMOTO AKIHIRO
IPC分类号： G03F7/16 , B05C11/00 , B05C11/08 , B05D1/40 , B05D3/00 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a coating method and a coating apparatus in which a coating film such as a resist film is formed with high film thickness precision and film thickness uniformity. SOLUTION: The coating apparatus is equipped with a substrate holding member 51 for holding a substrate W to be processed nearly horizontal, a motor 52 for rotating the substrate holding member 51, a coating liquid discharge nozzle 90 for supplying a coating liquid to the center of the substrate W to be processed, a pump 97 for discharging the coating liquid from the nozzle 90, a valve 94 provided in the pipe line 91, a valve opening detection means 94a for detecting a signal showing that the valve 94 is opened and a control means 100 for starting to drive the motor 52 based on the detection signal inputted to the valve opening detection means 94a.

133. 发明专利

JP2000058425A PROCESSOR AND PROCESSING METHOD 失效
公开(公告)号：JP2000058425A
公开(公告)日：2000-02-25
申请号：JP22952698
申请日：1998-07-31
申请人： TOKYO ELECTRON LTD
发明人： FUJIMOTO AKIHIRO , YOSHIHARA KOSUKE
IPC分类号： G03F7/16 , G03F7/30 , H01L21/027 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a processor and a processing method for widening a margin, in response to the rebounding of cleaning fluid ejected to the back face of a substrate. SOLUTION: A back rinse nozzle 46 is arranged on a tangent (1) of a wafer W held by a spin chuck 31 and an ejecting direction 3 is directed to a rotating direction 2 of the wafer W. Therefore, rinse fluid ejected from the back rinse nozzle 46 is allowed to bump into an intersection point 5 of the tangent 1 and a normal 4 on the back face of the wafer W.

134. 发明专利

JPH11333359A FORMATION OF COATING FILM 失效
公开(公告)号：JPH11333359A
公开(公告)日：1999-12-07
申请号：JP16418898
申请日：1998-05-27
申请人： TOKYO ELECTRON LTD
发明人： YOSHIHARA KOSUKE
IPC分类号： G03F7/16 , B05C11/08 , B05C11/10 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To prevent such defective coating as nonuniform coating by controlling the suspension of a coating soln. so that the soln. surface is stopped above the tip face of a nozzle so that the coating soln. to be applied on a substrate to be treated is not isolated and left in the tip of the nozzle. SOLUTION: A resist soln. is dripped, and then the tip face of the resist soln. in a nozzle 21 is stopped at a first position A 0.5-1.0 mm above the tip opening of the nozzle 21 by closing a pneumatic valve at a specified speed to prevent dripping. Subsequently, a suck-back valve is gradually opened in 1-2 sec to stop the tip face of the resist soln. in the nozzle 21 at a second position B about 3 mm above the tip opening of the nozzle 21, and the drying of the soln. surface is prevented.

135. 发明专利

JPH11260717A RESIST COATING METHOD AND APPARATUS 失效
公开(公告)号：JPH11260717A
公开(公告)日：1999-09-24
申请号：JP17816898
申请日：1998-06-10
申请人： TOKYO ELECTRON LTD
发明人： YOSHIHARA KOSUKE
IPC分类号： G03F7/16 , B05C11/08 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a resist coating method and apparatus which can adjust a thickness of a coated film at a predetermined constant value even when the amount of drop of a resist solution is made small. SOLUTION: A resist solution is supplied to a nearly central area of a substrate W to be processed while the substrate is rotated, to thereby be coated on the substrate W diffusedly outwards radially of the substrate. After stoppage of the supply of the resist solution, and preferably immediately after the stoppage of the solution supply, a rotational speed of the substrate W is once decreased to adjust a film thickness and thereafter the rotational speed is again increased to shake off a residual solution from the substrate.

136. 发明专利

JPH08124846A TREATMENT METHOD AND DEVICE 失效
公开(公告)号：JPH08124846A
公开(公告)日：1996-05-17
申请号：JP23345695
申请日：1995-08-18
申请人： TOKYO ELECTRON LTD , TEL KYUSHU KK
发明人： TANAKA HIDEYA , MORIOKA NORIMITSU , YOSHIHARA KOSUKE
IPC分类号： G03F7/16 , G03F7/30 , H01L21/027 , H01L21/304
摘要： PURPOSE: To prevent treatment liquid from reaching the rear side of a work so as to enhance a treatment device in treatment efficiency. CONSTITUTION: A treatment device is equipped with a spin chuck 21 which spins and holds a semiconductor wafer W, a treatment liquid supply nozzle 3 which supplies a developing liquid L to the surface of the semiconductor wafer W, a first and a second cleaning liquid spray nozzle, 31 and 32, which spray rinsing liquid R against the front and rear of the semiconductor wafer W respectively, and a cylindrical wall 24 which is arranged at a site adjacent to the rear peripheral part of the wafer W, wherein the top face 24a of the cylindrical wall 24 is set as wide as 5 to 15mm. By this setup, a liquid film of rinsing liquid R is capable of being formed between the peripheral part of the semiconductor wafer W and the top face 24a of the cylindrical wall 24 before a developing treatment is carried out, so that the developing liquid L is prevented from reaching to the rear of the wafer W by the liquid film.

137. 发明专利

JP2003100589A DEVELOPING APPARATUS AND METHOD 审中-公开
公开(公告)号：JP2003100589A
公开(公告)日：2003-04-04
申请号：JP2001289069
申请日：2001-09-21
申请人： TOKYO ELECTRON LTD
发明人： YAMAMOTO TARO , FUJIMOTO AKIHIRO , YOSHIHARA KOSUKE , KYODA HIDEJI , TAKEGUCHI HIROSHI
IPC分类号： G03F7/30 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To carry out development with high uniformity by preventing a chemical flow generated in a fluid film of development solution on the surface of the substrate in a method for coating the substrate with the development solution while a feeding nozzle is shifted from one edge side to the other edge side of the surface of the substrate. SOLUTION: A solution flow control plate having conduction holes drilled at positions facing the whole face of a substrate for passing the development solution from a feeding nozzle to the rear side is put opposite to the surface of the substrate, which is kept horizontally by a substrate holding unit, at a height for keeping the control plate in contact with a fluid film of development solution applied to the surface of the substrate. Then, the development solution is applied to the surface of the substrate through the solution flow control plate while the feeding nozzle is shifted. In this case, a reactive force caused by the lose of flow of development solution, which is pulled by surface tension from a diameter part to an outer near part of an end circumferential part, is canceled, so that a flow or a ruffle of the development solution on the surface of the substrate can be prevented, and a resist pattern with a uniform line width can be obtained.

138. 发明专利

JP2001307984A RESIST APPLICATION METHOD AND RESIST APPLICATION DEVICE 失效
公开(公告)号：JP2001307984A
公开(公告)日：2001-11-02
申请号：JP2000120999
申请日：2000-04-21
申请人： TOKYO ELECTRON LTD
发明人： YOSHIHARA KOSUKE
IPC分类号： G03F7/16 , B05C9/08 , B05C11/08 , B05D1/40 , B05D3/10 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a resist application method and a resist application device which can apply resist on an irregular substrate surface uniformly. SOLUTION: Since a wafer W is rotated during shake-off drying at a rotation velocity (second rotation velocity) which is slower than a rotation velocity (first rotation velocity) during resist application, resist solution which extends on the wafer W surface creeps uniformly also in a position 144 of an irregular groove 143, which is shaded viewed from a rotation center of the wafer W, and resist solution is extended to the surface of the wafer W uniformly.

139. 发明专利

JP2019004108A 成膜方法、記憶媒体及び成膜システム审中-公开
公开(公告)号：JP2019004108A
公开(公告)日：2019-01-10
申请号：JP2017119627
申请日：2017-06-19
申请人： TOKYO ELECTRON LTD
发明人： YOSHIHARA KENTARO , YOSHIDA YUICHI , SHIBATA NAOKI , YOSHIHARA KOSUKE
IPC分类号： H01L21/027 , B05D3/00 , G03F7/09 , G03F7/16 , G03F7/38
摘要：【課題】所定のパターンにより凹凸が表面に形成された基板上に塗布膜を形成する成膜方法及び成膜システムにおいて、膜厚の面内均一性が高い塗布膜を形成する。【解決手段】本成膜方法は、所定のパターンにより表面に凹凸が形成されたウェハW上にレジスト液を塗布してレジスト膜を形成する方法であり、ウェハの表面上に塗布液を塗布し、表面上のレジスト膜の凹凸の深さH2が所定値以下でありレジスト膜Rの目標の膜厚より厚いレジスト膜Rである厚膜R´を形成する工程と、厚膜R´の表面を除去し、目標の膜厚の塗布膜Rを形成する工程と、を含む。【選択図】図9

140. 发明专利

JP2002208560A EQUIPMENT AND METHOD OF PROCESSING SUBSTRATE 审中-公开
公开(公告)号：JP2002208560A
公开(公告)日：2002-07-26
申请号：JP2001308427
申请日：2001-10-04
申请人： TOKYO ELECTRON LTD
发明人： YOSHIHARA KOSUKE , FUJIMOTO AKIHIRO , YAMAMOTO TARO , KYODA HIDEJI , KOSUGI HITOSHI , DEGUCHI MASATOSHI , TAKEGUCHI HIROSHI , HORI SHINYA
IPC分类号： G03F7/30 , B05C5/00 , B05C11/08 , B05D1/26 , H01L21/027 , H01L21/677 , H01L21/68 , H01L21/683
摘要： PROBLEM TO BE SOLVED: To provide an equipment and method of processing a substrate which can reduce adverse effects on the surface of a wafer by preventing the run of a processing liquid at the edge of the surface of a substrate in a development process. SOLUTION: The substrate processing equipment comprises a dam member 77 provided with a dam section 77a which is higher than the surface of a wafer W, lengthy processing liquid supply nozzle 78 having the length longer than the maximum width of the substrate W, and nozzle driving section which makes the processing liquid supply nozzle 78 scan over the substrate W so that the leading end of the nozzle 78 may pass over the dam section 77a, with the dam member 77 installed along the peripheral edge of the substrate W. The processing liquid is reserved in a predetermined depth on the substrate W. When supplying the processing liquid, the processing liquid is caused to overflow the dam section 77a to reduce adverse effects on the surface of the substrate.

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