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    • 1. 发明专利
    • Liquid treatment device, liquid treatment method and storage medium for liquid treatment
    • 液体处理装置,液体处理方法和液体处理储存介质
    • JP2014017393A
    • 2014-01-30
    • JP2012154514
    • 2012-07-10
    • Tokyo Electron Ltd東京エレクトロン株式会社
    • YOSHIHARA KOSUKENAITO RYOICHIROYOSHIDA YUICHI
    • H01L21/304H01L21/027
    • PROBLEM TO BE SOLVED: To prevent a process liquid residual and droplet breakup on a substrate surface and prevent defects on the substrate surface by controlling a boundary surface between a liquid film and a dry region in a liquid treatment of forming a liquid film of a process liquid and performing a treatment, and removing the liquid film and performing drying.SOLUTION: A liquid treatment method comprises while rotating a wafer W: forming a liquid film by supplying a cleaning liquid L to a surface center of the wafer from a first cleaning liquid nozzle 60; supplying an N2 gas from a first gas nozzle 70 from a central part toward a periphery of the wafer and removing the liquid film on the wafer surface to form a dry region D; and supplying an N2 gas, when a first drying fluid supply part moves to a position on a concentric circle with a second drying fluid supply starting position set at a position which does not interfere with the first drying fluid supply part, from the second drying fluid supply starting position toward the periphery of the wafer from a second gas nozzle 80 to a boundary surface between the liquid film and the dry region, and moving the first gas nozzle and the second gas nozzle in a concentric fashion.
    • 要解决的问题:为了防止在形成液体膜的液体处理中控制液膜和干燥区域之间的边界面,从而防止基板表面上的处理液残留和液滴破裂,并防止基板表面上的缺陷 液体并进行处理,除去液膜并进行干燥。溶液:液体处理方法包括在旋转晶片W的同时,通过从第一清洗液体向晶片的表面中心供给清洗液L来形成液膜 喷嘴60; 从第一气体喷嘴70从晶片的中心部分朝向晶片的周边供给N 2气体,并且除去晶片表面上的液膜以形成干燥区域D; 并且当第一干燥流体供应部分移动到同心圆上的位置时,提供N2气体,其中第二干燥流体供应起始位置设定在不干扰第一干燥流体供应部分的位置处,从第二干燥流体 从第二气体喷嘴80向液晶薄膜和干燥区域之间的边界面提供朝向晶片周边的起始位置,并以同心方式移动第一气体喷嘴和第二气体喷嘴。
    • 2. 发明专利
    • Substrate cleaning method, substrate cleaning apparatus, and storage medium
    • 基板清洁方法,基板清洁装置和存储介质
    • JP2012165000A
    • 2012-08-30
    • JP2012088434
    • 2012-04-09
    • Tokyo Electron Ltd東京エレクトロン株式会社
    • YOSHIHARA KOSUKEYOSHIDA YUICHIYAMAMOTO TARO
    • H01L21/304H01L21/027
    • PROBLEM TO BE SOLVED: To provide a technology capable of providing a high cleaning effect in a short time when cleaning the surface of a substrate of which a static contact angle of water is 85° or larger.SOLUTION: With a substrate being rotated, a cleaning liquid is discharged from a cleaning nozzle to the central part of the substrate, such that it is spread across the entire surface of the substrate by centrifugal force. Then, while the substrate is being rotated, a discharge position of the cleaning liquid on the substrate is changed to an eccentric position which is deviated from the central part of the substrate. At the same time, under such condition as a distance is set to be 9-15 mm between a gas discharge position side interface at the discharge position of the cleaning liquid and a cleaning liquid discharge position side interface at the discharge position of gas by a gas nozzle, the gas is discharged to the central part of the substrate from the gas nozzle, so that a dry area of the cleaning liquid is formed. After that, the supply position of the cleaning liquid is shifted toward the peripheral edge of the substrate at a speed lower than the speed at which the dry area expands outward.
    • 要解决的问题:提供一种在清洁水的静态接触角为85°以上的基板的表面的情况下能够在短时间内提供高清洁效果的技术。 解决方案:当基板旋转时,清洁液体从清洗喷嘴排出到基板的中心部分,使得其通过离心力分布在基板的整个表面上。 然后,当基板旋转时,基板上的清洗液的排出位置变为偏离基板中心的偏心位置。 同时,在清洗液排出位置的气体排出位置侧界面与气体排出位置处的清洗液排出位置侧界面之间的距离设定为9〜15mm的条件下, 气体喷嘴,气体从气体喷嘴排出到基板的中心部分,从而形成清洁液体的干燥区域。 此后,清洗液的供给位置以比干燥区域向外扩展的速度低的速度朝向基板的周缘移动。 版权所有(C)2012,JPO&INPIT
    • 3. 发明专利
    • Developing device, developing method and storage medium
    • 开发设备,开发方法和存储介质
    • JP2012119480A
    • 2012-06-21
    • JP2010267624
    • 2010-11-30
    • Tokyo Electron Ltd東京エレクトロン株式会社
    • ARIMA YUTAKAYOSHIHARA KOSUKEYOSHIDA YUICHIKONDO YOSHIHIRO
    • H01L21/027G03F7/30
    • PROBLEM TO BE SOLVED: To provide a developing device which is capable of forming a pattern within a substrate surface with a high uniformity.SOLUTION: A developing device comprises: a substrate holding unit for horizontally holding a substrate, of which a surface has been coated with a resist and exposed; a developing solution supply unit for supplying a developing solution to the surface of the substrate and developing the resist; a radiant light irradiation unit which irradiates a preset certain region on the substrate with radiant light containing a wavelength absorption region of a material of the substrate in order to heat the developing solution and enhance the degree of reaction between the developing solution and the resist; and a cleaning liquid supply unit for supplying a cleaning solution to the surface of the substrate to remove the developing solution.
    • 要解决的问题:提供能够以高均匀性在基板表面内形成图案的显影装置。 解决方案:显影装置包括:用于水平保持基板的基板保持单元,其中表面已经被抗蚀剂涂覆并暴露; 显影液供给单元,用于将显影液供给到所述基板的表面并显影所述抗蚀剂; 辐射光照射单元,其对包含基板的材料的波长吸收区域的辐射光照射在基板上的预定的某一区域,以便加热显影溶液并增强显影液和抗蚀剂之间的反应程度; 以及用于将清洗液供给到基板的表面以除去显影液的清洗液供给单元。 版权所有(C)2012,JPO&INPIT
    • 4. 发明专利
    • Developing device, developing method and storage medium
    • 开发设备,开发方法和存储介质
    • JP2011166087A
    • 2011-08-25
    • JP2010030532
    • 2010-02-15
    • Tokyo Electron Ltd東京エレクトロン株式会社
    • TAKIGUCHI YASUSHIYAMAMOTO TAROARIMA YUTAKAYOSHIHARA KOSUKEYOSHIDA YUICHI
    • H01L21/027
    • G03F7/3021
    • PROBLEM TO BE SOLVED: To provide a developing device that forms a liquid film of a developer over the entire surface of a substrate speedily while suppressing a consumption of the developer.
      SOLUTION: The developing device comprises an airtight processing container in which a processing atmosphere is created, a temperature control plate which is provided in the processing container and on which a substrate is placed, an atmospheric gas supply section which supplies an atmospheric gas including mist and vapor into the processing container, and a first temperature control section which controls the temperature control plate to a temperature at which the vapor condenses into droplets on the substrate, an inner wall of the processing container being held at a temperature at which the vapor is unlikely to condense into droplets on the inner wall.
      COPYRIGHT: (C)2011,JPO&INPIT
    • 解决的问题:提供一种在抑制显影剂消耗的同时快速地在基板的整个表面上形成显影剂的液膜的显影装置。 解决方案:显影装置包括其中产生处理气氛的气密处理容器,设置在处理容器中并放置基板的温度控制板,提供气氛气体的气氛气体供应部分 包括雾和蒸汽进入处理容器;以及第一温度控制部分,其将温度控制板控制到蒸气在基板上冷凝成液滴的温度,处理容器的内壁保持在 蒸气不可能在内壁上凝结成液滴。 版权所有(C)2011,JPO&INPIT
    • 5. 发明专利
    • Substrate processing device, coating development device with the same, and substrate processing method
    • 基板处理装置,具有该基板处理装置的涂层开发装置以及基板处理方法
    • JP2013162040A
    • 2013-08-19
    • JP2012024381
    • 2012-02-07
    • Tokyo Electron Ltd東京エレクトロン株式会社
    • YOSHIDA YUICHIYOSHIHARA KOSUKEIZEKI TOSHIHIRO
    • H01L21/027G03F7/30H01L21/304
    • PROBLEM TO BE SOLVED: To easily exhaust liquid from spacers of a pattern formed on a substrate.SOLUTION: The substrate processing device comprises: a substrate holding section capable of holding a substrate and rotating the substrate with a center of the substrate as a rotation center; a rinse liquid supply section that can move in a direction toward an outer edge from the center of the substrate rotated by the substrate holding section and supply rinse liquid to a surface of the substrate; and a first inactive gas supply section that can move toward the outer edge from the center of the substrate together with the rinse liquid supply section, and supply inactive gas to the surface of the substrate rotated by the substrate holding section from a supply direction inclined from a direction vertical to the surface of the substrate and displaced to a downstream side in a rotation direction of the substrate from a radial direction of the substrate.
    • 要解决的问题:容易地从形成在基板上的图案的间隔物排出液体。解决方案:基板处理装置包括:基板保持部分,其能够保持基板并且以基板的中心为旋转中心旋转基板 ; 冲洗液供给部,能够从基板保持部旋转的基板的中心朝向外边缘的方向移动,并将冲洗液供给到基板的表面; 以及能够与冲洗液供给部一起从基板的中心朝向外边缘移动的第一非活性气体供给部,并且从从基板保持部旋转的基板的表面,从从 与基板的表面垂直的方向,从基板的径向向基板的旋转方向的下游侧移动。
    • 6. 发明专利
    • Liquid processing device and liquid processing method
    • 液体加工装置和液体加工方法
    • JP2013058655A
    • 2013-03-28
    • JP2011196685
    • 2011-09-09
    • Tokyo Electron Ltd東京エレクトロン株式会社
    • YOSHIDA YUICHITAKAYANAGI YASUHARU
    • H01L21/027B05C11/10
    • PROBLEM TO BE SOLVED: To provide a liquid processing device capable of simultaneously improving cleaning performance for removing foreign materials in a treatment liquid and deaeration performance for removing bubbles mixed in the treatment liquid, and to provide a liquid processing method.SOLUTION: A liquid processing device comprises: a temporary storage container 40 connected to a resist container 13 via a first pipe line 26; a supply nozzle connected to the temporary storage container via a second pipe line 27; a deaeration mechanism 32 for discharging the bubbles mixed in the treatment liquid by bringing the inside of the temporary storage container into a negative pressure; an inflow tank 41 which is formed in the temporary storage container and stores the treatment liquid supplied via the first pipe line; an outflow tank 43 which stores the treatment liquid overflowing from the inflow tank and is connected to the second pipe line 27; a third pipe line 28 which connects the outflow tank and the first pipe line; a selector valve 31 interposed in a connection unit between the first pipe line and the third pipe line; a pump P2 for supply and circulation which supplies the treatment liquid to the inflow tank from the outflow tank via the third pipe line and the first pipe line; and a filter 50 which is interposed in the third pipe line and removes foreign materials and bubbles.
    • 解决问题的方案:提供一种液体处理装置,其能够同时提高除去处理液中的异物的清洗性能,以及除去处理液中混入的气泡的脱气性能,提供液体处理方法。 解决方案:液体处理装置包括:临时存储容器40,经由第一管线26连接到抗蚀剂容器13; 供给喷嘴,经由第二管路27连接到临时存储容器; 用于通过使临时存储容器的内部进入负压而排出混入处理液体中的气泡的脱气机构32; 流入箱41,其形成在临时存储容器中,并存储经由第一管路供给的处理液; 存储从流入槽溢出并与第二管路27连接的处理液的流出槽43; 连接流出箱和第一管路的第三管路28; 插入在第一管线和第三管线之间的连接单元中的选择阀31; 用于供给和循环的泵P2,其经由第三管线和第一管线从流出箱向流入箱供给处理液; 以及插入在第三管路中并除去异物和气泡的过滤器50。 版权所有(C)2013,JPO&INPIT
    • 7. 发明专利
    • Substrate cleaning method, substrate cleaning apparatus and storage medium for substrate cleaning
    • 基板清洗方法,基板清洗装置和基板清洗存储介质
    • JP2012114409A
    • 2012-06-14
    • JP2011196376
    • 2011-09-08
    • Tokyo Electron Ltd東京エレクトロン株式会社
    • ARIMA YUTAKAYOSHIDA YUICHIYOSHIHARA KOSUKE
    • H01L21/304H01L21/027
    • G03F7/422H01L21/67051
    • PROBLEM TO BE SOLVED: To provide a substrate cleaning method which allows for high cleaning effect in a short time even if a substrate coated with a highly water-repellent material is cleaned, and to provide a substrate cleaning apparatus and a storage medium for substrate cleaning.SOLUTION: A liquid film is formed on the entire surface of a wafer by supplying a cleaning liquid R having a temperature higher than the processing atmosphere temperature (23°C) to the center part C of a semiconductor wafer W on which a circuit pattern is formed. The cleaning liquid supply position is then shifted by a predetermined distance from the center part toward the circumference of the wafer, and a dry region D is formed by ejecting a gas G to the center part of the wafer. By shifting the cleaning liquid supply position at a speed substantial equal to the speed at which the dry region spreads to the circumference of the wafer, and scraping out the dissolution products remaining between the circuit patterns of a resist film by the cleaning liquid, surface of the wafer is cleaned.
    • 要解决的问题:提供一种即使清洗涂覆有高度疏水材料的基材,也能够在短时间内实现高清洗效果的基板清洗方法,并且提供基板清洁装置和存储介质 用于基材清洗。 解决方案:通过向半导体晶片W的中心部分C提供温度高于加工气氛温度(23℃)的清洗液体R,在晶片的整个表面上形成液膜,其中, 形成电路图案。 然后将清洗液供给位置从晶片的中心部朝向圆周移动预定距离,通过将气体G喷射到晶片的中心部分而形成干燥区域D. 通过以与干燥区域扩散到晶片周边的速度大致相等的速度移动清洁液供给位置,并且通过清洗液刮除残留在抗蚀剂膜的电路图案之间的溶解产物, 晶片被清洁。 版权所有(C)2012,JPO&INPIT
    • 8. 发明专利
    • Developing apparatus, developing method, and storage medium
    • 开发设备,开发方法和存储介质
    • JP2011166086A
    • 2011-08-25
    • JP2010030524
    • 2010-02-15
    • Tokyo Electron Ltd東京エレクトロン株式会社
    • ARIMA YUTAKAYOSHIHARA KOSUKEYOSHIDA YUICHITAKIGUCHI YASUSHIYAMAMOTO TARO
    • H01L21/027G03F7/30H01L21/304
    • G03F7/3021
    • PROBLEM TO BE SOLVED: To provide a developing apparatus which obtains a high throughput.
      SOLUTION: The developing apparatus includes: an airtight processing vessel having a processing atmosphere formed therein; an atmosphere gas supplying unit for supplying mist of a developing liquid into the processing vessel to condense the developing liquid on the surfaces of a substrate transported into the processing vessel and thereby to form a liquid film thereon; and a drying unit for drying the substrate to stop the developing action of the liquid film. Since the reaction between the developing liquid and a resist can be stopped, the developing operation can be carried out concurrently with the cleaning operation of a cleaning module, thus a high throughput is attained.
      COPYRIGHT: (C)2011,JPO&INPIT
    • 要解决的问题:提供一种获得高产量的显影装置。 解决方案:显影装置包括:形成有处理气氛的气密处理容器; 气氛气体供给单元,用于将显影液体的雾供给到处理容器中,以将显影液冷凝在输送到处理容器中的基板的表面上,从而在其上形成液膜; 以及用于干燥基板以停止液膜的显影动作的干燥单元。 由于可以停止显影液和抗蚀剂之间的反应,因此可以与清洁模块的清洁操作同时进行显影操作,从而实现高生产率。 版权所有(C)2011,JPO&INPIT
    • 10. 发明专利
    • Processing liquid supply method, processing liquid supply device and storage medium
    • 处理液体供应方法,处理液体供应装置和储存介质
    • JP2014078562A
    • 2014-05-01
    • JP2012224331
    • 2012-10-09
    • Tokyo Electron Ltd東京エレクトロン株式会社
    • YOSHIDA YUICHINAITO RYOICHIROKOSHO TOMONOBU
    • H01L21/027B05C11/08B05C11/10B05D3/00H01L21/304
    • B01D36/001B01D19/0036B01D37/046B01D2201/202B01D2201/204B01D2221/14C02F1/20C02F2103/346C02F2209/03F04B53/20G03C2001/7437
    • PROBLEM TO BE SOLVED: To provide a technology for reducing a processing liquid to be consumed for removing air bubbles from a filter part when a novel filter part is mounted in a processing liquid supply path, and shortening a startup time.SOLUTION: A processing liquid supply method includes the steps of: filling the inside of a novel filter part with a processing liquid; then making the inside of the filter part into a first pressure atmosphere which is a negative pressure atmosphere, in order to remove air bubbles from the filter part; then boosting the inside of the filter part; conducting the processing liquid from a primary side of the filter part to the filter part thereafter while making a secondary side of the filter part into a second pressure atmosphere higher than the first pressure atmosphere; and performing liquid processing by supplying the processing liquid which has been conducted through the filter part, through a nozzle to an object to be processed. Thus, air bubbles can be speedily removed.
    • 要解决的问题:提供一种当将新型过滤器部件安装在处理液体供应路径中时减少用于从过滤器部分去除气泡的消耗处理液的技术,并且缩短启动时间。解决方案:处理液体 供给方法包括以下步骤:用处理液填充新型过滤器部件的内部; 然后使过滤器部分的内部进入作为负压气氛的第一压力气氛,以从过滤器部分除去气泡; 然后升压过滤器部件的内部; 在将过滤器部分的二次侧进入比第一压力气氛高的第二压力气氛的同时,将处理液从过滤器部分的初级侧引导到过滤器部分; 并且通过将已经通过过滤器部件进行的处理液通过喷嘴供给到被处理物体来进行液体处理。 因此,可以快速地除去气泡。