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1. 发明专利

JP2007258658A Method and device for detecting discharge of coating liquid, and program for detecting discharge of coating liquid 审中-公开
标题翻译：用于检测涂料液体排放的方法和装置，以及用于检测涂料液体排出的程序
公开(公告)号：JP2007258658A
公开(公告)日：2007-10-04
申请号：JP2006191068
申请日：2006-07-12
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： KOSHO TOMONOBU , KIYOTA KENJI , FUKUDA YOSHITERU , SASAGAWA NORIHIKO
IPC分类号： H01L21/027 , B05C11/00 , B05C11/08 , B05D1/26 , B05D3/00 , G03F7/16
摘要： PROBLEM TO BE SOLVED: To provide a method and a program for detecting discharge of coating liquid by which detection of discharge of a coating liquid is accurately executed regardless of kind or property of a substrate and the coating liquid devoted to treatment. SOLUTION: By using a laser sensor 40, laser reflected light volume on a surface of a wafer W onto which a resist liquid R is discharged is measured to set a threshold of a noise margin. Then the laser reflected light volume on the wafer surface before the resist liquid is discharged from a resist nozzle 20 onto the wafer surface is detected, and further the minimum laser reflected light volume on the wafer surface during discharging the resist liquid is detected. Then a difference of the laser reflected light volume between before discharge and during discharge of the resist liquid is compared with the threshold value of the noise margin to detect a discharge condition of the resist liquid. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于检测涂布液的排出的方法和程序，通过该方法和程序可以准确地执行涂布液的排出检测，而不管基材的种类或性质以及用于处理的涂布液。解决方案：通过使用激光传感器40，测量在其上放出抗蚀剂液体R的晶片W的表面上的激光反射光体积，以设定噪声容限的阈值。然后检测抗蚀剂液体从抗蚀剂喷嘴20排出到晶片表面之前的晶片表面上的激光反射光体积，并且进一步检测在排出抗蚀剂液体期间晶片表面上的最小激光反射光体积。然后将放电前和放电期间的激光反射光体积的差异与噪声余量的阈值进行比较，以检测抗蚀剂液体的放电条件。版权所有（C）2008，JPO＆INPIT

2. 发明专利

JP2012146862A Substrate processing device 有权
标题翻译：基板处理装置
公开(公告)号：JP2012146862A
公开(公告)日：2012-08-02
申请号：JP2011004968
申请日：2011-01-13
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： FURUYA GORO , TERADA SHOJI , FUKUDA YOSHITERU , WADA NORIO
IPC分类号： H01L21/677 , H01L21/02 , H01L31/04 , H01M14/00
CPC分类号： H01L21/67727 , H01L21/67173 , H01L21/67742 , H01L21/67745 , H01L21/67748 , H01L21/67757 , H01L21/67781 , H01M14/005 , Y02E10/542 , Y02P70/521
摘要： PROBLEM TO BE SOLVED: To improve throughput of sheet/batch mix processing by continuously and efficiently transferring substrates between a sheet processing device and a batch processing device.SOLUTION: In the substrate processing device, a laterally elongated process station 10 is arranged at a system center part, and a loader 12 and an unloader 14 are coupled to both ends in the longitudinal direction (X-direction) of the process station 10. The process station 10 is constituted by a sheet concentration block 10A, a sheet/batch mix block 10B, and a sheet concentration block 10C arranged in the order of a process flow from the loader 12 toward the unloader 14. The intermediate sheet/batch mix block 10B is provided with one or more sheet action electrode deposition units 36, one or more sheet grid wiring deposition units 38, a batch heat processing device 40, and a batch calcination device 42.
摘要翻译：要解决的问题：通过在片材处理装置和批处理装置之间连续且有效地转移基板来提高片/批混合处理的生产量。解决方案：在基板处理装置中，横向延伸的处理站10布置在系统中心部分，并且装载器12和卸载器14在该过程的纵向（X方向）上连接到两端处理站10由片材浓度块10A，片/批混合块10B和以从装载器12到卸载器14的处理流程顺序排列的片材浓度块10C构成。中间片 /批料混合块10B设置有一个或多个片状作用电极沉积单元36，一个或多个片状网格布线沉积单元38，批量加热装置40和批量煅烧装置42.版权所有（C） 2012年，JPO＆INPIT

3. 发明专利

JP2012146855A Substrate processing device 有权
标题翻译：基板处理装置
公开(公告)号：JP2012146855A
公开(公告)日：2012-08-02
申请号：JP2011004783
申请日：2011-01-13
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： FURUYA GORO , TERADA SHOJI , FUKUDA YOSHITERU , WADA NORIO
IPC分类号： H01L21/677 , B65G49/06 , B65G49/07
CPC分类号： H01L21/67742 , H01L21/67173 , H01L21/67727 , H01L21/67745 , H01L21/67748 , Y02E10/542 , Y02P70/521
摘要： PROBLEM TO BE SOLVED: To efficiently perform a series of processing applied to a substrate at high throughput by a new substrate transfer system regardless of a kind of sheet processing or batch processing.SOLUTION: In this substrate processing device, a laterally elongated process station 10 is arranged at a system center part, and a loader 12 and an unloader 14 are coupled to both ends in the longitudinal direction (X-direction) of the process station 10. The process station 10 has a transfer line 28 extending straight in the system longitudinal direction (X-direction) from the loader 12 toward the unloader 14. A large number and various kinds of below-described processing units 44-54 are arranged on both of right and left sides across the transfer line 28. A plurality of (in the illustrated example, 4) sheet transfer mechanisms 30, 32, 34, 36 and a plurality of (3) shuttle transfer parts 38, 40, 42 are alternately aligned in line on the transfer line 28.
摘要翻译：要解决的问题：无论片状处理或批量处理的种类如何，通过新的基板传送系统有效地以高生产率对基板进行一系列处理。解决方案：在该基板处理装置中，横向延伸的处理站10被布置在系统中心部分，并且装载器12和卸载器14在该过程的纵向（X方向）上的两端连接）处理站10具有从系统纵向（X方向）从装载器12向卸载器14直线延伸的传送线28.多个和各种下述的处理单元44-54被布置在传送线28的左右两侧。多个（在所示示例中为4）片材传送机构30,32,34,36和多个（3）梭子传送部分38,40,42是交替排列在传输线28上。版权所有：（C）2012，JPO＆INPIT

4. 发明专利

JP2013094685A Nozzle maintenance apparatus and coating treatment apparatus using the same 审中-公开
标题翻译：喷嘴维护装置和涂层处理装置
公开(公告)号：JP2013094685A
公开(公告)日：2013-05-20
申请号：JP2011236649
申请日：2011-10-28
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： FUKUDA YOSHITERU
IPC分类号： B08B1/04 , B05B15/02 , B05C5/02
摘要： PROBLEM TO BE SOLVED: To eliminate the useless consumption of a chemical solution such as a treatment solution and to shorten a cycle time to improve productivity.SOLUTION: This nozzle maintenance apparatus includes a wiping body 11 formed in cylindrical or disk shape, having a plurality of wiping parts 11a formed in parallel on the peripheral surface along the longitudinal direction of a nozzle tip, holding the nozzle tip 3a by one wiping part facing a predetermined direction, and provided to be movable along the longitudinal direction of the nozzle tip; wiping body moving units 13, 14, 15 moving the wiping body along the longitudinal direction of the nozzle tip; and wiping body rotating units 17, 18 rotating the wiping body moved to the side of the nozzle tip to place the other wiping part in a state of facing the predetermined direction, in place of the one wiping part.
摘要翻译：要解决的问题：消除化学溶液如处理溶液的无用的消耗，并缩短循环时间以提高生产率。解决方案：该喷嘴维护装置包括形成为圆柱形或圆盘形状的擦拭体11，具有沿着喷嘴尖端的长度方向在圆周表面上平行形成的多个擦拭部分11a，将喷嘴尖端3a保持在一个擦拭部件面向预定方向，并且设置成能够沿着喷嘴头的长度方向移动; 擦拭体移动单元13,14,15沿着喷嘴头的纵向方向移动擦拭体; 以及擦拭体旋转单元17,18，使得擦拭体移动到喷嘴尖端的侧面，以将另一个擦拭部分置于面向预定方向的状态，代替一个擦拭部分。版权所有（C）2013，JPO＆INPIT

5. 发明专利

JP2010232415A Substrate heat treatment apparatus 有权
标题翻译：基材热处理设备
公开(公告)号：JP2010232415A
公开(公告)日：2010-10-14
申请号：JP2009078160
申请日：2009-03-27
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： TAKAGI YASUHIRO , KAWAMICHI TATSUYA , FUKUDA YOSHITERU
IPC分类号： H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a substrate heat treatment apparatus facilitating the connection of a suction pipe with a heat treatment plate, maintaining heat uniformity within the surface of the heat treatment plate, and improving maintainability such as the inspection and exchange of the heat treatment plate. SOLUTION: This substrate heat treatment apparatus is equipped with: a heat plate 70 where a semiconductor wafer W is placed and heat-treated; a plurality of suction openings 76 formed on the wafer mounting surface of the heat plate 70 to suck the wafer; and a suction pipe 78 that connects each suction opening 76 and a suction means. At one end of the suction pipe 78, a connecting member 77 made of thermally insulated and flexible synthetic rubber is equipped. Then, the connecting member 77 is closely attached to the lower surface of the heat plate 70, and the suction opening 76 and the suction pipe 78 are connected airtightly. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种便于吸引管与热处理板连接的基板热处理装置，保持热处理板表面内的热均匀性，提高可维护性，例如检查和更换热处理板。解决方案：该基板热处理装置配备有：放置半导体晶片W并进行热处理的加热板70; 形成在加热板70的晶片安装表面上的多个吸入口76，以吸收晶片; 以及连接每个吸入口76和抽吸装置的吸入管78。在吸入管78的一端设有由绝热柔性合成橡胶制成的连接部件77。然后，连接构件77紧密地附接到加热板70的下表面，并且吸入开口76和吸入管78气密地连接。版权所有（C）2011，JPO＆INPIT

6. 发明专利

JP2007134671A Method and apparatus for processing substrate 有权
标题翻译：用于处理基板的方法和装置
公开(公告)号：JP2007134671A
公开(公告)日：2007-05-31
申请号：JP2006192587
申请日：2006-07-13
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： FUKUDA YOSHITERU , OGATA NOBUHIRO , ISHII TAKAYUKI , TAUCHI HIROSHI
IPC分类号： H01L21/027 , G03F7/16
CPC分类号： H01L21/6715 , G03F7/162 , G03F7/168 , H01L21/67051
摘要： PROBLEM TO BE SOLVED: To provide a substrate processing method and an substrate processing apparatus which make sure to remove a cleaning liquid adhering to the periphery of a processed substrate, and at the same time, can attain the shortening of processing time, and can attain the prevention of the re-sticking of a coating liquid to the processed substrate. SOLUTION: A spin chuck 10 rotatably holds a semiconductor wafer W, while resist is dropped on a surface of the semiconductor wafer W through a resist application nozzle 20 and thus applied thereon. Before the resist applied on the wafer dries, the cleaning liquid is supplied through a bevel cleaning nozzle 30 to a portion of the wafer W located at a periphery thereof in a vicinity of a beveled portion 4 to remove the resist adhering to the beveled portion. Thereafter, a film of the resist that is formed on the surface of the wafer is dried. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种确保去除附着在被处理基板的周围的清洗液的基板处理方法和基板处理装置，同时能够缩短加工时间，并且可以防止涂覆液体再次附着在被处理基板上。解决方案：旋转卡盘10可旋转地保持半导体晶片W，同时抗蚀剂通过抗蚀剂施加喷嘴20落在半导体晶片W的表面上并因此施加在其上。在施加在晶片上的抗蚀剂干燥之前，将清洁液通过斜面清洁喷嘴30供给到位于其周边的晶片W的位于斜面部4附近的部分，以去除附着在斜面部分上的抗蚀剂。此后，将形成在晶片表面上的抗蚀剂膜干燥。版权所有（C）2007，JPO＆INPIT

7. 发明专利

JP2012129188A Pigment adsorption device, pigment adsorption method, substrate processing apparatus, and substrate processing method 有权
标题翻译：颜料吸收装置，颜料吸收方法，基板处理装置和基板处理方法
公开(公告)号：JP2012129188A
公开(公告)日：2012-07-05
申请号：JP2011119604
申请日：2011-05-27
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： WADA NORIO , TERADA SHOJI , FUKUDA YOSHITERU , FURUYA GORO
IPC分类号： H01M14/00 , H01L31/04
CPC分类号： H01G9/20 , H01G9/2031 , H01G9/2059 , H01G9/2068 , Y02E10/542
摘要： PROBLEM TO BE SOLVED: To significantly shorten the process time required for a step of causing a porous semiconductor layer on a substrate surface to adsorb pigments.SOLUTION: During a process, a flow of pigment solution is formed in a gap between a substrate G and solution guide surfaces 92L and 92R of a nozzle 20, and a porous semiconductor layer on the surface of substrate is subjected to a pigment adsorption treatment in the flow of pigment solution. Further, in addition to the flow of pigment solution, the impact pressure from slit-like discharge openings 88L and 88R as well as the pressure of turbulence at groove-like rough parts 94L and 94R, act in a vertical direction. Consequently, aggregation or association of pigments together is hard to occur at a surface layer part of the porous semiconductor layer on the surface of the substrate, allowing the pigments to efficiently infiltrate into the depth of the porous semiconductor layer, for high speed progression of pigment adsorption in the porous semiconductor layer.
摘要翻译：要解决的问题：为了显着缩短使基材表面上的多孔半导体层吸附颜料的步骤所需的处理时间。解决方案：在该过程中，在基板G和喷嘴20的溶液引导表面92L和92R之间的间隙中形成颜料溶液流，并且在基板表面上的多孔半导体层经受颜料吸附处理在颜料溶液流中。此外，除了颜料溶液的流动之外，来自狭缝状排出口88L和88R的冲击压力以及凹槽状粗糙部94L和94R处的湍流压力沿垂直方向作用。因此，在基材表面的多孔半导体层的表面层部分难以发生颜料的聚集或缔合，使得颜料能够有效地渗透到多孔半导体层的深度中，用于颜料的高速进行在多孔半导体层中的吸附。版权所有（C）2012，JPO＆INPIT

8. 发明专利

JP2006093409A Coater and method for coating treatment 有权
标题翻译：涂层和涂层处理方法
公开(公告)号：JP2006093409A
公开(公告)日：2006-04-06
申请号：JP2004277111
申请日：2004-09-24
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： FUKUDA YOSHITERU , IZEKI TOSHIHIRO , ISHII TAKAYUKI
IPC分类号： H01L21/027 , B05C11/08 , B05C11/10 , B05D3/00
CPC分类号： H01L21/67184 , H01L21/6708 , H01L21/6715
摘要： PROBLEM TO BE SOLVED: To carry out a series of resist coating treatment including edge rinse in a short time.
SOLUTION: A resist coater 20 is provided with a plurality of solvent supply nozzles S
1 to S
4 supplying solvents having different dissolution parameters. A specific solvent supply nozzle is selected for an edge rinse process so that the selected nozzle discharges a removing solvent having a dissolution parameter gap larger than a preset value against a coating solvent contained in a resist liquid. In resist coating treatment, a resist liquid is delivered from a resist liquid supply nozzle to the center of a spinning wafer W, and a film of the resist liquid having a given thickness is formed. Subsequently, the edge rinse process starts as the resist liquid on the wafer W has not dried up yet, and a nozzle selected out of the solvent supply nozzles S1 to S4 supplies the removing solvent to the periphery of the wafer W. At this time, the supplied removing solvent is not mixed with the resist liquid remaining on the wafer W, thus removing only the resist liquid on the periphery in a proper manner.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：在短时间内进行一系列抗蚀涂层处理，包括边缘冲洗。解决方案：抗蚀剂涂布机20具有供给具有不同溶解参数的溶剂的多个溶剂供应喷嘴S 1 。选择特定的溶剂供应喷嘴用于边缘漂洗过程，使得所选择的喷嘴相对于抗蚀剂液体中包含的涂布溶剂排出具有大于预设值的溶解参数间隙的去除溶剂。在抗蚀剂涂布处理中，将抗蚀剂液体从抗蚀剂液体供给喷嘴输送到旋转晶片W的中心，形成具有给定厚度的抗蚀剂液体的膜。随后，边缘漂洗处理从晶片W上的抗蚀剂液体尚未干燥开始，从溶剂供给喷嘴S1〜S4中选出的喷嘴将去除溶剂供给到晶片W的周围。此时，所供给的除去溶剂不与保留在晶片W上的抗蚀剂液体混合，从而以适当的方式仅去除外围的抗蚀剂液体。版权所有（C）2006，JPO＆NCIPI

9. 发明专利

JP2012113981A Dye absorption unit 有权
标题翻译： DYE吸收单元
公开(公告)号：JP2012113981A
公开(公告)日：2012-06-14
申请号：JP2010262344
申请日：2010-11-25
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： FURUYA GORO , TERADA SHOJI , FUKUDA YOSHITERU , WADA NORIO
IPC分类号： H01M14/00 , H01L31/04
CPC分类号： H01G9/20 , H01G9/2059 , H01L21/67057 , H01L21/67086 , H01L21/67757 , Y02E10/542 , Y02P70/521
摘要： PROBLEM TO BE SOLVED: To remarkably shorten the processing time of the step of adsorbing a dye by a porous semiconductor layer formed on a substrate surface to be processed.SOLUTION: The dye absorption unit 20 has a processing tank 30 with an upper face opening for collectively performing a dye absorption process on a batch of substrates G, and as movable system parts in connection with the processing tank 30, a boat 32 which can be put in and taken out of the processing tank 30 through the upper face opening, a boat transporting part 34 for putting the boat 32 in the processing tank 30 and taking it from there, and a top cover 36 for detachably closing the upper face opening of the processing tank 30. The dye absorption unit 20 further includes a dye solution supplying part for supplying a dye solution into the processing tank 30, and a flow control part for controlling the flow of the dye solution in the processing tank during the time of processing.
摘要翻译：要解决的问题：通过形成在待处理的基板表面上的多孔半导体层显着缩短吸附染料的步骤的处理时间。解决方案：染料吸收单元20具有一个具有上表面开口的处理槽30，用于在一批基底G上共同进行染料吸收过程，并且作为与处理罐30相关的可移动系统部件，具有船32 其可以通过上表面开口被放入处理槽30中并从其中取出，用于将船32放置在处理槽30中并将其从其中取出的船运送部34和用于可拆卸地封闭上部的顶盖36 染料吸收单元20还包括用于将染料溶液供应到处理槽30中的染料溶液供应部分和用于控制处理槽30中染料溶液流动的流量控制部分处理时间。版权所有（C）2012，JPO＆INPIT

10. 发明专利

JP2007300047A Heat treatment method, program, and heat treatment equipment 有权
标题翻译：热处理方法，程序和热处理设备
公开(公告)号：JP2007300047A
公开(公告)日：2007-11-15
申请号：JP2006129089
申请日：2006-05-08
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： FUKUDA YOSHITERU , SHIGETOMI KENICHI , SHO SHOKEN
IPC分类号： H01L21/027
CPC分类号： H01L21/67748 , H01L21/67005 , H01L21/67253 , H01L21/6838
摘要： PROBLEM TO BE SOLVED: To evenly heat a deflected wafer when placing it on a hot plate for heat treatment.
SOLUTION: The hot plate of a PEB device is provided with a plurality of sucking openings 150a, 150b, and 150c. The sucking opening 150a is formed at the central part of a wafer placing surface of the hot plate, the sucking opening 150b is formed at the middle of the hot plate, and the sucking opening 150c is formed on the outer periphery of the hot plate. The deflection state of a wafer W is measured before heat treatment. If the wafer W bends downward, the sucking start timing of the sucking opening 150c corresponding to the outer periphery of the wafer W is set to be earlier relative to other sucking openings. If the wafer W bends upward, the sucking start timing of the sucking opening 150a corresponding to the central part of the wafer W is set to be relatively earlier. When placing the wafer W on the hot plate, the deflected part on the upper side of the wafer W is sucked earlier, and deflection of the wafer W is corrected quickly.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：将偏转晶片放置在热板上进行热处理时，均匀加热。解决方案：PEB装置的热板设有多个吸入孔150a，150b和150c。吸入口150a形成在加热板的晶片放置面的中央部，吸热口150b形成在热板的中央，吸热口150c形成在热板的外周。在热处理之前测量晶片W的偏转状态。如果晶片W向下弯曲，则与晶片W的外周相对应的吸入口150c的吸入开始时刻相对于其他吸入孔设定得较早。如果晶片W向上弯曲，则与晶片W的中心部分相对应的吸入口150a的吸入开始定时被设定得比较早。当将晶片W放置在热板上时，晶片W的上侧的偏转部分被早期吸入，晶片W的偏转被快速校正。版权所有（C）2008，JPO＆INPIT

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