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1. 发明专利

JP2012070003A Development apparatus, development method and storage medium 有权
标题翻译：开发设备，开发方法和存储介质
公开(公告)号：JP2012070003A
公开(公告)日：2012-04-05
申请号：JP2011279908
申请日：2011-12-21
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： YAMAMOTO TARO , NAGAMINE SHUICHI , TAKEGUCHI HIROSHI
IPC分类号： H01L21/027 , G03F7/30
摘要： PROBLEM TO BE SOLVED: To stably supply a liquid developer to a substrate when developing the substrate after being coated with resist and exposed.SOLUTION: Nozzles are properly used corresponding to processes by configuring a development apparatus including: a plurality of development processing parts each having a substrate holding part; a first liquid developer nozzle provided in common to the plurality of development processing parts, for supplying the liquid developer in a belt shape to the surface of the substrate held by the substrate holding part; a driving mechanism for moving the first liquid developer nozzle so as to move the supply position of the liquid developer from one to the other of a center part and a peripheral edge part on the surface of the substrate in order to form the liquid film of the liquid developer on the entire surface of the substrate in the state that one end side of the belt-like area of the liquid developer discharged from the first liquid developer nozzle turns to the center of the substrate in the respective development processing parts; and a second liquid developer nozzle for supplying the liquid developer in a circular shape or in the belt shape shorter than the belt-like area to the center part of the substrate where the liquid film of the liquid developer is formed by the first liquid developer nozzle.
摘要翻译：待解决的问题：在涂覆抗蚀剂并曝光后在显影基板时，将液体显影剂稳定地供应到基板。解决方案：通过配置显影设备，对应于处理适当地使用喷嘴，包括：多个显影处理部件，每个显影处理部件具有基板保持部分; 与多个显影处理部共同设置的第一液体显影剂喷嘴，用于将带状的液体显影剂供给到由基板保持部保持的基板的表面; 用于使第一液体显影剂喷嘴移动以使液体显影剂的供给位置从基板的表面上的中心部分和周缘部分的一个移动到另一个的驱动机构，以形成液体显影剂的液体膜在从第一液体显影剂喷嘴排出的液体显影剂的带状区域的一端侧在相应的显影处理部分中转到基板的中心的状态下，在基板的整个表面上的液体显影剂; 以及第二液体显影剂喷嘴，用于将液体显影剂以比带状区域更短的圆形或带状形式提供给基板的中心部分，其中液体显影剂的液体膜由第一液体显影剂喷嘴。版权所有（C）2012，JPO＆INPIT

2. 发明专利

JP2006080315A Substrate cleaning method and developing apparatus 有权
标题翻译：基板清洗方法和开发设备
公开(公告)号：JP2006080315A
公开(公告)日：2006-03-23
申请号：JP2004262983
申请日：2004-09-09
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： NAKAMURA JUNJI , YOSHIHARA KOSUKE , YAMAMURA KENTARO , IWAO FUMIKO , TAKEGUCHI HIROSHI
IPC分类号： H01L21/027 , G03F7/30 , H01L21/304
CPC分类号： H01L21/67051 , B08B3/02 , B08B3/10 , G03F7/3021 , Y10S134/902
摘要： PROBLEM TO BE SOLVED: To obtain a high cleaning effect when cleaning dissolved objects on the surface of a semiconductor wafer after development is performed by feeding a developer onto a surface of the exposed wafer.
SOLUTION: A liquid film is formed by discharging a cleaning liquid from a nozzle to the center of a wafer and spreading the cleaning liquid around while rotating the completely developed wafer, a dry area is then generated in the center of the wafer by moving the nozzle, and the dry area is spread around by a centrifugal force by rotating the wafer at the rotating speed of 1500rpm. The nozzle is moved away from the center of the wafer for 80-95 mm, for example, at a speed not to be caught up by the dry area, and discharging of the cleaning liquid is stopped there. Furthermore, another nozzle is disposed at this position beforehand, and while discharging the cleaning liquid therefrom, discharging may be stopped just before the dry area arrives there. When forming the core of the dry area in the center of the wafer, it is preferable that gases are blown to the center of the wafer and blowing is immediately stopped.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了在通过将显影剂供给到暴露的晶片的表面上进行显影之后清洁半导体晶片的表面上的溶解物体时获得高清洁效果。解决方案：通过将清洗液从喷嘴排出到晶片的中心并在清洗完毕的晶片旋转的同时使清洗液散开，形成液膜，然后通过在晶片的中心产生干燥区域移动喷嘴，通过以1500rpm的转速旋转晶片，通过离心力将干燥区域分散。例如，以不被干燥区域捕获的速度将喷嘴从晶片的中心移开80-95mm，并且在那里停止清洗液的排出。此外，预先在该位置设置另一个喷嘴，在从其排出清洗液的同时，在干燥区域到达之前可以停止排出。当在晶片的中心形成干燥区域的芯时，优选地将气体吹到晶片的中心并立即停止吹塑。版权所有（C）2006，JPO＆NCIPI

3. 发明专利

JP2003100589A DEVELOPING APPARATUS AND METHOD 审中-公开
公开(公告)号：JP2003100589A
公开(公告)日：2003-04-04
申请号：JP2001289069
申请日：2001-09-21
申请人： TOKYO ELECTRON LTD
发明人： YAMAMOTO TARO , FUJIMOTO AKIHIRO , YOSHIHARA KOSUKE , KYODA HIDEJI , TAKEGUCHI HIROSHI
IPC分类号： G03F7/30 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To carry out development with high uniformity by preventing a chemical flow generated in a fluid film of development solution on the surface of the substrate in a method for coating the substrate with the development solution while a feeding nozzle is shifted from one edge side to the other edge side of the surface of the substrate. SOLUTION: A solution flow control plate having conduction holes drilled at positions facing the whole face of a substrate for passing the development solution from a feeding nozzle to the rear side is put opposite to the surface of the substrate, which is kept horizontally by a substrate holding unit, at a height for keeping the control plate in contact with a fluid film of development solution applied to the surface of the substrate. Then, the development solution is applied to the surface of the substrate through the solution flow control plate while the feeding nozzle is shifted. In this case, a reactive force caused by the lose of flow of development solution, which is pulled by surface tension from a diameter part to an outer near part of an end circumferential part, is canceled, so that a flow or a ruffle of the development solution on the surface of the substrate can be prevented, and a resist pattern with a uniform line width can be obtained.

4. 发明专利

JP2003031459A Liquid processing apparatus 有权
标题翻译：液体加工设备
公开(公告)号：JP2003031459A
公开(公告)日：2003-01-31
申请号：JP2001210757
申请日：2001-07-11
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： DEGUCHI MASATOSHI , YAMAMOTO TARO , FUJIMOTO AKIHIRO , YOSHIHARA KOSUKE , KYODA HIDEJI , TAKEGUCHI HIROSHI
IPC分类号： G03F7/30 , B05C5/00 , B05C11/10 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To save consumption of processing liquid when supplying the processing liquid such as developing liquid through horizontal scanning the supply nozzle against almost a circular substrate.
SOLUTION: The supply nozzle 4 has ejection holes 50 along almost the same length as the diameter of a wafer W or the like, wherein the inside of the nozzle 4 is divided into three channels 51 to 53 in the longitudinal direction. A first ejection region Wa is formed by the flow channel 51, a second ejection region Wb is formed by the flow channels 51, 52, and a third ejection region Wc is formed by the flow channels 51 to 53. Each flow channel is connected to a respective supply channel 54 having a pressure-setting valve, and each supply channel 54 is connected to a common processing-liquid tank 55 via a common pump P1. The pressure of the pump P1 is controlled so that, for example, if the pressure exceeds 0.03 Mpa, the valve Va is opened to eject the developing liquid from the first flow channel 51. An ejection region of the nozzle 4 is selected in accordance with the region to be coated of the wafer W, and consequently the ejection to regions outside the wafer W is reduced to save the processing liquid.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：为了在通过水平扫描供给喷嘴几乎为圆形的基板供给处理液体（如显影液体）时节省处理液的消耗。解决方案：供给喷嘴4具有与晶片W等的直径大致相同长度的喷射孔50，其中喷嘴4的内部在纵向方向上分成三个通道51至53。第一喷射区域Wa由流动通道51形成，第二喷射区域Wb由流动通道51,52形成，并且第三喷射区域Wc由流动通道51至53形成。每个流动通道连接到具有压力调节阀的相应供应通道54，并且每个供应通道54经由公共泵P1连接到公共处理液箱55。控制泵P1的压力，例如，如果压力超过0.03Mpa，则阀Va打开以从第一流动通道51喷射显影液。喷嘴4的喷射区域根据晶圆W的被涂覆区域，从而对晶片W外的区域的喷射被减少以节省处理液体。

5. 发明专利

JP2013211525A Liquid processing apparatus and liquid processing method 有权
标题翻译：液体加工设备和液体加工方法
公开(公告)号：JP2013211525A
公开(公告)日：2013-10-10
申请号：JP2012288515
申请日：2012-12-28
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： YOSHIHARA KOSUKE , ICHINO KATSUNORI , KOSHO TOMONOBU , SASA TAKUSHI , TSUCHIYA KATSUHIRO , TERASHITA YUICHI , TAKEGUCHI HIROSHI
IPC分类号： H01L21/027 , B01D19/00 , B01D24/48 , B01D29/11 , B01D29/60 , B01D33/00 , B01D35/18 , B01D35/20 , B01D36/00 , B01D37/04 , B05C11/10
CPC分类号： B01D19/0063 , B01D19/0031 , B01D19/0068 , G03F7/16 , G03F7/30 , H01L21/6715
摘要： PROBLEM TO BE SOLVED: To efficiently prevent particles being processed from increasing without wasting a processing liquid.SOLUTION: A liquid processing apparatus includes a supply line 51, a filter device 52a which is interposed in the supply line, and filters a resist liquid L (processing liquid) and also removes air bubbles mixed with the resist liquid L, a pump P interposed in a secondary-side supply line 51 (51b) of the filter device, a circulation line 55 connecting a secondary side of the pump and a primary side of the filter device to each other, a supply control valve 57 interposed in the secondary side of the pump P, a circulation control valve 56 interposed in the circulation line 55, and a controller 200 which closes the supply control valve 57 and also opens the circulation control valve 56, and drives the pump P when supplying the resist liquid L from other processing liquid supply nozzles 7b-7d to a wafer W, the resist liquid being circulated between the supply line 51 and circulation line 55 under the control of the controller.
摘要翻译：要解决的问题：有效地防止加工颗粒增加而不浪费处理液体。溶液：液体处理装置包括供给管线51，插入供给管线中的过滤器装置52a，并且将抗蚀剂液体L（处理液体），并且还去除与抗蚀剂液体L混合的气泡，插入在过滤装置的次级侧供给管线51（51b）中的泵浦P），连接泵的次级侧的循环管线55和初级侧过滤器装置彼此相邻的供给控制阀57，设置在泵P的次级侧的供给控制阀57，设置在循环管路55中的循环控制阀56，以及关闭供给控制阀57的控制器200，循环控制阀56，并且当从其它处理液供给喷嘴7b-7d向晶片W供给抗蚀剂液体L时驱动泵P，抗蚀剂液体在供给管线51a之间循环在循环管线55的控制下。

6. 发明专利

JP2013026338A Development processing method, development processing device, program and computer storage medium 有权
标题翻译：开发处理方法，开发处理设备，程序和计算机存储介质
公开(公告)号：JP2013026338A
公开(公告)日：2013-02-04
申请号：JP2011158122
申请日：2011-07-19
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： TAKEGUCHI HIROSHI
IPC分类号： H01L21/027 , G03F7/30
摘要： PROBLEM TO BE SOLVED: To equalize the linewidth of a resist pattern in the plane of a substrate.SOLUTION: In the development processing method of a resist film on a wafer W where a predetermined pattern is exposed by supplying a developing solution M onto the wafer W and then performing post exposure baking, thickness of the resist film on the wafer W is measured before and after the post exposure baking. Based on the difference of thickness of the resist film measured before and after the post exposure baking, development conditions are set for each shot of the pattern on the wafer. Based on the development conditions thus set, the amount of misty developing solution M supplied and the development time are adjusted for each shot thus adjusting the linewidth of the resist pattern after development processing.
摘要翻译：要解决的问题：为了均衡衬底平面中的抗蚀剂图案的线宽。解决方案：在晶片W上的抗蚀剂膜的显影处理方法中，通过将显影液M供给到晶片W上然后进行后曝光烘烤，曝光了预定图案，抗蚀剂膜在晶片W上的厚度在后曝光烘烤之前和之后测量。基于在曝光后烘烤之前和之后测量的抗蚀剂膜的厚度差，对晶片上的图案的每个镜头设定显影条件。根据这样设定的发展条件，对每一次照射调整供给的雾状显影剂M的量和显影时间，从而调整显影处理后的抗蚀剂图案的线宽。版权所有（C）2013，JPO＆INPIT

7. 发明专利

JP2009302433A Developing method and developing apparatus 有权
标题翻译：发展方法和发展手段
公开(公告)号：JP2009302433A
公开(公告)日：2009-12-24
申请号：JP2008157560
申请日：2008-06-17
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： TAKEGUCHI HIROSHI , YAMAMOTO TARO , YOSHIHARA KOSUKE
IPC分类号： H01L21/027 , G03F7/30 , G03F7/38
CPC分类号： G03F7/162 , G03F7/3021
摘要： PROBLEM TO BE SOLVED: To provide a developing method and a developing apparatus which improve the wetness of the surface of a resist film on a hydrophobic substrate to enable an efficient formation of a developer film and stabilize the developing. SOLUTION: According to the developing method, a wafer W held horizontally by a spin chuck 40 is rotated and the surface of the wafer W is supplied with a developer to be subjected to the developing. In the developing method, a prewet process is executed before a developing step, the prewet process being executed to simultaneously supply a developer 100 from a developing nozzle 52 near the center of the surface of a rotating wafer W and pure water 200 of a second solution from a pure water nozzle 53 closer to the outer periphery of the wafer W than the developing nozzle 52 so that the pure water 200 flowing toward the outer periphery of the wafer W in association with the rotation of the wafer W forms a wall 300 and the developer 100 is spread toward the direction of rotation by the wall 300. This improves the wetness of the surface of a resist film on the hydrophobic substrate W to enable efficient formation of a developer film and stabilize the developing. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种显影方法和显影装置，其提高疏水性基板上的抗蚀剂膜的表面的湿度，能够有效地形成显影剂膜并使显影稳定。解决方案：根据显影方法，通过旋转卡盘40水平保持的晶片W旋转，并且晶片W的表面被供给显影剂以进行显影。在显影方法中，在显影步骤之前执行预湿处理，执行预湿处理以从显影喷嘴52同时供应来自旋转晶片W的表面中心附近的显影喷嘴52和第二溶液的纯水200 从比显影喷嘴52更靠近晶片W的外周的纯水喷嘴53，与晶片W的旋转相关联地流向晶片W的外周的纯水200形成壁300，显影剂100通过壁300朝向旋转方向扩散。这改善了疏水性基板W上的抗蚀剂膜的表面的湿度，从而能够有效地形成显影剂膜并稳定显影。版权所有（C）2010，JPO＆INPIT

8. 发明专利

JP2005328083A Device and method for development 有权
标题翻译：用于开发的装置和方法
公开(公告)号：JP2005328083A
公开(公告)日：2005-11-24
申请号：JP2005214805
申请日：2005-07-25
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： YAMAMOTO TARO , FUJIMOTO AKIHIRO , YOSHIHARA KOSUKE , KYODA HIDEJI , TAKEGUCHI HIROSHI
IPC分类号： G03F7/30 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To perform highly uniform development control formation of the flow of the liquid into the liquid developer film on the surface of the substrate, in a method of applying liquid developer, while making a feed nozzle move from the rear end to the front end of a substrate surface.
SOLUTION: When heaping-up the liquid developer by making the feed nozzle travel from a rear end to a front end of the substrate surface, wherein the feed nozzle has the same length as the effective region of the substrate, gas flows are fed along the surface of the substrate in the traveling direction of the feed nozzle from vent holes provided along the peripheral edge of the rear end of the substrate, for example. Alternatively, valves for a plurality of vent holes are sequentially opened to feed gas flows in the upward direction, when the feed nozzle passes through above the respective vent holes, wherein the plurality of vent holes are provided along the peripheral edge of the front end of the substrate.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了进行高度均匀的显影控制，在液体显影剂的表面上形成液体流入液体显影剂膜中，在施加液体显影剂的方法中，同时使进料喷嘴从后方移动终止于衬底表面的前端。解决方案：通过使进料喷嘴从基板表面的后端移动到前端，使液体显影剂堆积，其中进料喷嘴具有与基板的有效区域相同的长度，气体流动为例如，沿着沿着基板的后端的周缘设置的通气孔沿着进给喷嘴的行进方向沿着基板的表面进给。或者，当供给喷嘴通过相应通气孔的上方时，顺序地打开用于多个通气孔的阀，以沿向上的方向供给气体流，其中多个通气孔沿着前端的周边边缘设置底物。版权所有（C）2006，JPO＆NCIPI

9. 发明专利

JP2005101100A Device and method for development processing 有权
标题翻译：用于开发处理的装置和方法
公开(公告)号：JP2005101100A
公开(公告)日：2005-04-14
申请号：JP2003330334
申请日：2003-09-22
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： YAMAMOTO TARO , KYODA HIDEJI , OKOCHI ATSUSHI , TAKEGUCHI HIROSHI , YOSHIHARA KOSUKE
IPC分类号： G03F7/30 , B05C11/08 , B05D1/26 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To adjust the shifting way of a nozzle unit easily and to carry out a developing process uniformly throughout the surface of the substrate when a developing solution is supplied onto the substrate as the nozzle unit is made to scan the surface of the substrate.
SOLUTION: A development processing device is composed of a moving mechanism which moves the nozzle unit from the one end to the other end of the substrate, and an air bearing cylinder which is provided to the moving mechanism to guide the nozzle unit in a vertical direction. The nozzle unit is moved by the moving mechanism to apply the developing solution uniformly over the surface of the substrate as the nozzle unit is levitated by the discharge pressure of the developing solution that is discharged out from the developing solution outlet of the nozzle unit.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了使喷嘴单元的移动方式容易地调节并且当将喷墨单元制成扫描时将显影液供给到基板上时，在基板的整个表面上均匀地进行显影处理基板的表面。解决方案：显影处理装置由移动机构组成，该移动机构使喷嘴单元从基板的一端移动到另一端，空气轴承圆筒设置在移动机构上以将喷嘴单元引导垂直方向当喷嘴单元被从喷嘴单元的显影液出口排出的显影液的排出压力悬浮时，喷嘴单元被移动机构移动以将显影溶液均匀地施加在基板的表面上。版权所有（C）2005，JPO＆NCIPI

10. 发明专利

JP2003332228A Method of processing development 有权
标题翻译：处理发展方式
公开(公告)号：JP2003332228A
公开(公告)日：2003-11-21
申请号：JP2002192457
申请日：2002-07-01
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： YAMAMOTO TARO , KYODA HIDEJI , TAKEGUCHI HIROSHI , YOSHIHARA KOSUKE
IPC分类号： G03F7/30 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To improve the uniformity of developed line widths and, in addition, to shorten the time for processing development by supplying a developer to a substrate. SOLUTION: The developer is applied to the surface of a wafer W by moving a supply nozzle 4 having discharge ports 40 provided, for example, over a length which is nearly equal to the diameter of the wafer W in an almost horizontal direction from one end side to the other end side of the wafer W. Then, after development is progressed by leaving the wafer W as it is for a moment, pure water is supplied to the surface of the wafer W while the movement of a dissolution product is suppressed by moving the nozzle 4 at an almost the same speed as that of applying the developer in the same direction as that of applying the developer within 20 seconds after the application of the developer is started. Since the developing time is put in order on the surface of the wafer and becomes shorter and the in-plane uniformity of developed line widths is improved, the processing time becomes shorter. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：为了提高显影线宽度的均匀性，另外通过将显影剂供应到基底来缩短加工显影的时间。解决方案：通过移动具有例如在几乎水平方向上设置有大致等于晶片W的直径的长度的排出口40的供给喷嘴4，将显影剂施加到晶片W的表面从晶片W的一端侧到另一端侧。然后，通过将晶片W原样放置一段时间进行显影后，将纯水供给到晶片W的表面，同时溶解产物通过以与施加显影剂开始后20秒内施加显影剂相同方向施加显影剂的速度几乎相同的速度移动喷嘴4而被抑制。由于在晶片的表面上依次放置显影时间并且变短，并且显影线宽度的面内均匀性得到改善，所以处理时间变短。版权所有（C）2004，JPO

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