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    • 122. 发明授权
    • Backflow prevention apparatus for feeding a mixture of gases
    • 用于供给气体混合物的防回流装置
    • US5950675A
    • 1999-09-14
    • US800763
    • 1997-02-13
    • Yukio MinamiNobukazu IkedaManohar L. ShresthaSatoshi Kagatsume
    • Yukio MinamiNobukazu IkedaManohar L. ShresthaSatoshi Kagatsume
    • B01J4/00C23C16/44C23C16/455F17D1/04G05D11/13H01L21/205H01L21/302H01L21/3065F17D1/02
    • G05D11/132F17D1/04Y10T137/87684
    • An apparatus for mixing and feeding plural gases flowing at different mass flow rates and having different molecular weights includes a plurality of gas feed lines connected to a mixing region having an outlet for feeding a mixture of the gases to a semiconductor production apparatus. The gas feed line carrying the lowest-flow-rate gas is connected to the mixing region at a location farther from the outlet than where any other feed line is connected to the mixing region. Feed lines carrying gases other than the lowest-flow-rate gas are connected to the mixing region according to (1) the relative mass flow rates of the gases carried by the lines (2) the relative molecular weights of the gases carried by the lines or (3) the product of the respective gas flow rates and molecular weights of the gases. At least the line carrying the lowest-flow-rate gas is provided with an apparatus for increasing the velocity of the gas flowing therein prior to entry of the gas into the mixing region.
    • 用于混合和供给以不同质量流量流动并且具有不同分子量的多种气体的装置包括连接到具有用于将气体混合物供给到半导体生产装置的出口的混合区域的多个气体供给管线。 承载最低流量气体的气体供给管线在距离出口更远的位置处与混合区域连接,其中任何其它进料管线连接到混合区域。 携带除最低流量气体之外的气体的进料管线根据(1)线路(2)携带的气体的相对质量流量与管线携带的气体的相对分子量连接到混合区域 或(3)气体的相应气体流速和分子量的乘积。 至少带有最低流量气体的管线设置有用于在气体进入混合区域之前增加其中流动的气体的速度的装置。
    • 125. 发明授权
    • Method and apparatus for feeding gas into a chamber
    • 将气体送入室内的方法和装置
    • US5488967A
    • 1996-02-06
    • US327419
    • 1994-10-21
    • Yukio MinamiNobukazu Ikeda
    • Yukio MinamiNobukazu Ikeda
    • F17D1/02B01J4/00C23C16/44C23C16/455G05D16/00H01L21/205F16K11/12
    • C23C16/45561B01J4/008C23C16/4412C23C16/455Y10T137/0318Y10T137/0396Y10T137/86083Y10T137/87249Y10T137/87499
    • A vacuum deposition chamber alternately receives a reactive gas and an inert gas during a process in which a thin film is formed on a wafer in the chamber. The inert gas flows through a first pressure regulator, a first feed line and a first changeover valve into the chamber. The reactive gas flows through a second pressure regulator, a second feed line and a second changeover valve into the chamber. A vent line is connected to a vacuum pump and a pressure regulating valve which vents to the atmosphere to thereby control the vacuum pressure in the vent line. A first shunt valve is connected between the vent line and the first feed line and a second shunt valve is connected between the vent line and the second feed line. When the first changeover valve is opened to permit flow of reactive gas into the chamber, the second shunt valve is opened to evacuate the second feed line and when the second changeover valve is opened to permit flow of inert gas into the chamber, the first shunt valve is opened to evacuate the first feed line. By alternately evacuating the feed lines, pressure fluctuations which usually occur in the chamber at the time of changeover from one gas to the other, are suppressed.
    • 真空沉积室在室中的晶片上形成薄膜的过程中交替地接收反应性气体和惰性气体。 惰性气体通过第一压力调节器,第一供给管线和第一转换阀流入腔室。 反应性气体通过第二压力调节器,第二进料管线和第二转换阀流入室中。 排气管线连接到真空泵和通向大气的压力调节阀,从而控制排气管线中的真空压力。 第一分流阀连接在排气管线和第一进料管线之间,第二分流阀连接在排气管线和第二进料管线之间。 当第一转换阀打开以允许反应气体流入腔室时,第二分流阀打开以排出第二进料管线,并且当第二转换阀打开以允许惰性气体流入室中时,第一分流器 打开阀门以排出第一个进料管线。 通过交替地排出进料管线,抑制了在从一种气体切换到另一种气体时在室中通常发生的压力波动。