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111. 发明申请

US20080134721A1 Method of Bending Glass Sheets 审中-公开
标题翻译：弯曲玻璃板的方法
公开(公告)号：US20080134721A1
公开(公告)日：2008-06-12
申请号：US11908176
申请日：2006-03-09
申请人： Kenji Maeda
发明人： Kenji Maeda
IPC分类号： C03B29/08
CPC分类号： C03B23/0258 , C03B29/08
摘要： Glass sheets to be bent are conveyed continuously into a tunnel kiln in which the temperature is adjusted progressively to glass-softening temperature. At least one part of the kiln comprises distributed heating means opposite at least one part of the surface of the sheets, such as to provide a temperature distribution that is selected according to the desired curvature. The heating is distributed using heating elements that are positioned opposite the sheets and the power delivered by each element is selected in order to provide the desired temperature distribution, the movement of the sheet being accompanied by the successive synchronized operation of the heating elements that are disposed along the path thereof.
摘要翻译：要弯曲的玻璃板被连续地输送到其中温度逐渐调节到玻璃软化温度的隧道窑中。窑的至少一部分包括与板的表面的至少一部分相对的分布式加热装置，以提供根据期望曲率选择的温度分布。使用与片材相对定位的加热元件分配加热，并且选择由每个元件输送的功率以提供期望的温度分布，片材的移动伴随着所配置的加热元件的连续同步操作沿着它的路径。

112. 发明申请

US20080027742A1 INFORMATION PROCESSING METHOD, INFORMATION PROCESSING APPARATUS, COMPUTER PROGRAM AND STORAGE MEDIUM 有权
标题翻译：信息处理方法，信息处理装置，计算机程序和存储介质
公开(公告)号：US20080027742A1
公开(公告)日：2008-01-31
申请号：US11782017
申请日：2007-07-24
申请人： Kenji Maeda
发明人： Kenji Maeda
IPC分类号： G06Q10/00
CPC分类号： G06F21/105
摘要： An information processing method for managing issuance of a license that controls an operation of a device and a function of an application to be installed in the device determines whether issuance of a unified license that unifies licenses for making the application operable in a plurality of devices is requested. The unified license is issued based on a combination of the devices identified by the device serial information and the application identified by the license access information, if determined that issuance of the unified license is requested.
摘要翻译：用于管理控制设备的操作的许可证的发行和安装在设备中的应用的功能的信息处理方法确定统一许可证的统一许可证是否使用于在多个设备中可操作的应用的许可证是要求如果确定要求发布统一许可证，则基于由设备串行信息识别的设备和由许可证访问信息识别的应用的组合来发布统一许可证。

113. 发明申请

US20080017318A1 SEMICONDUCTOR DEVICE MANUFACTURING APPARATUS CAPABLE OF REDUCING PARTICLE CONTAMINATION 审中-公开
标题翻译：减少颗粒污染的半导体器件制造设备
公开(公告)号：US20080017318A1
公开(公告)日：2008-01-24
申请号：US11668038
申请日：2007-01-29
申请人： Hiroyuki Kobayashi , Kenji Maeda , Kenetsu Yokogawa , Masaru Izawa
发明人： Hiroyuki Kobayashi , Kenji Maeda , Kenetsu Yokogawa , Masaru Izawa
IPC分类号： C23F1/00 , C23C16/00
CPC分类号： C23C16/4401 , H01J37/32091 , H01J37/32678 , H01J2237/022
摘要： In a semiconductor device manufacturing apparatus which is equipped with: a process chamber; a unit for supplying gas to said process chamber; a exhausting unit to reduce pressure in said process chamber; a high frequency power source for plasma generation; a coil for generating a magnetic field; and a mounted electrode for mounting a substance to be processed, particles were transported in the circumference direction of said substance to be processed by thermo-phoretic force, by changing the magnetic field distribution, so as to make a plasma distribution at the surface of said substance to be processed, in a convex form, in ignition of the plasma or after completion of a predetermined processing, compared with the plasma distribution during said predetermined processing to said substance to be processed, and thus to generate temperature gradient of processing gas just above said substance to be processed.
摘要翻译：在配备有处理室的半导体装置制造装置中，用于向所述处理室供应气体的单元; 用于减少所述处理室中的压力的排气单元; 用于等离子体产生的高频电源; 用于产生磁场的线圈; 以及安装用于安装被处理物质的安装电极，通过改变磁场分布，通过热电解力将粒子沿着所述待加工物质的周向方向输送，以使所述等离子体分布在所述与所述预定处理期间的等离子体分布相比，等离子体点火时或者在完成预定处理后，处于凸形状的物质与刚刚上述的处理气体的温度梯度相比较说物质被处理。

114. 发明授权

US07213067B2 System, apparatus and control method for monitoring system changes within a network configuration 失效
标题翻译：用于监控网络配置中系统更改的系统，设备和控制方法
公开(公告)号：US07213067B2
公开(公告)日：2007-05-01
申请号：US10382502
申请日：2003-03-07
申请人： Kenji Maeda
发明人： Kenji Maeda
IPC分类号： G06F15/173
CPC分类号： G06F9/4411 , G06F13/4068 , G06F15/177
摘要： For making a host computer automatically recognize a composite apparatus used with switching between functions thereof, the host 102 recognized whether a device is connected, based on a potential of cable data1. With switching between the functions of the apparatus, the device 100 temporarily stops supply of power to the cable data1 and restart the supply a predetermined time thereafter by R controller 205. When the supply of power is stopped, the host 102 assumes that the device is disconnected and deletes a driver for the device from a memory. When the supply of power is restarted thereafter, the host 102 recognizes the device 100 as a device having a new function, reads device information, and installs a driver suitable for the new device.
摘要翻译：为了使主计算机自动识别与其功能之间切换所使用的复合装置，主机102基于电缆数据1的电位来识别设备是否连接。通过在设备的功能之间切换，设备100临时停止向电缆数据1的供电，并且此后由R控制器205重新开始供电。当电力供应停止时，主机102假设设备断开，并从存储器中删除设备的驱动程序。当此后重新启动电源时，主机102将设备100识别为具有新功能的设备，读取设备信息，并安装适合于新设备的驱动程序。

115. 发明授权

US07154189B2 Semiconductor device and method for fabricating the same 有权
公开(公告)号：US07154189B2
公开(公告)日：2006-12-26
申请号：US11035986
申请日：2005-01-18
申请人： Kenji Maeda , Takashi Takata , Takao Ochi , Hiroki Naraoka , Takeshi Kawabata , Yoshiyuki Arai , Shigeru Nonoyama , Hajime Homma
发明人： Kenji Maeda , Takashi Takata , Takao Ochi , Hiroki Naraoka , Takeshi Kawabata , Yoshiyuki Arai , Shigeru Nonoyama , Hajime Homma
IPC分类号： H01L23/29 , H01L23/31
CPC分类号： H05K1/186 , H01L24/81 , H01L24/83 , H01L24/97 , H01L25/0652 , H01L25/0657 , H01L25/50 , H01L2224/1134 , H01L2224/131 , H01L2224/13144 , H01L2224/13155 , H01L2224/16225 , H01L2224/2919 , H01L2224/32225 , H01L2224/73204 , H01L2224/81191 , H01L2224/83101 , H01L2224/83102 , H01L2224/83192 , H01L2224/92125 , H01L2224/97 , H01L2924/00013 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/0665 , H01L2924/15787 , H01L2924/18161 , H01L2924/19041 , H01L2924/19043 , H01L2924/3511 , H01L2224/81 , H01L2224/83 , H01L2924/00014 , H01L2224/13099 , H01L2924/00 , H01L2924/00012
摘要： A semiconductor chip is mounted on a first surface of a substrate, the substrate having wiring formed on the first surface, so that a circuit formation surface of the semiconductor chip faces the first surface of the substrate and that electrodes provided on the circuit formation surface are connected with the wiring. A sealing resin layer is then formed on the first surface of the substrate to cover the semiconductor chip. The sealing resin layer and the semiconductor chip are ground starting from a surface opposite to the circuit formation surface to thin the semiconductor chip.

116. 发明申请

US20060241299A1 Process for making spirolactone compounds 审中-公开
标题翻译：制备螺内酯化合物的方法
公开(公告)号：US20060241299A1
公开(公告)日：2006-10-26
申请号：US10550136
申请日：2004-05-14
申请人： Ralph Volante , Steven Weissman , Takehiko Iida , Yuhei Yamamoto , Hiroki Sato , Kenji Maeda , Naotaka Sawada , Toshiaki Mase
发明人： Ralph Volante , Steven Weissman , Takehiko Iida , Yuhei Yamamoto , Hiroki Sato , Kenji Maeda , Naotaka Sawada , Toshiaki Mase
IPC分类号： C07D491/10
CPC分类号： C07D491/10
摘要： This invention relates to a process for making spirolactone compounds of general formula I, having an improved IA/IB ratio, according to the following shceme.
摘要翻译：本发明涉及按照下列方法制备具有改进的IA / IB比的通式Ⅰ的己内酯化合物的方法。

117. 发明申请

US20060236932A1 Plasma processing apparatus 审中-公开
标题翻译：等离子体处理装置
公开(公告)号：US20060236932A1
公开(公告)日：2006-10-26
申请号：US11201243
申请日：2005-08-11
申请人： Kenetsu Yokogawa , Kenji Maeda , Hiroyuki Kobayashi , Masaru Izawa , Tadamitsu Kanekiyo
发明人： Kenetsu Yokogawa , Kenji Maeda , Hiroyuki Kobayashi , Masaru Izawa , Tadamitsu Kanekiyo
IPC分类号： C23F1/00 , C23C16/00
CPC分类号： H01J37/32633 , H01J37/321 , H01J37/32623 , H01L21/67069
摘要： The invention provides a plasma processing apparatus capable of preventing the production of particle and preventing the influence of particle on the sample. The plasma processing apparatus comprises a vacuum chamber; process gas introducing means for introducing process gas into the vacuum chamber; means, coupled to a first RF power supply, for applying RF energy to the process gas introduced into the vacuum chamber to turn the process gas into plasma; a sample mounting electrode for mounting a sample on an upper surface thereof and holding the sample in the vacuum chamber; evacuation means for evacuating the process gas in the vacuum chamber; and plasma confining means, provided on a peripheral side of the mounting electrode in the vacuum chamber, for inflecting flow of the process gas caused by the evacuation means on a downstream side of a sample mounting surface of the mounting electrode to prevent plasma from diffusing downstream of the sample mounting surface.
摘要翻译：本发明提供一种等离子体处理装置，其能够防止颗粒的产生并防止颗粒对样品的影响。等离子体处理装置包括真空室; 处理气体引入装置，用于将处理气体引入真空室; 装置，耦合到第一RF电源，用于将RF能量施加到引入到真空室中的工艺气体，以将工艺气体转化为等离子体; 用于将样品安装在其上表面并将样品保持在真空室中的样品安装电极; 用于抽真空室中的处理气体的排气装置; 以及设置在真空室中的安装电极的周边侧的等离子体限制装置，用于使由排气装置产生的处理气体的流动在安装电极的样品安装表面的下游侧流动，以防止等离子体向下游扩散的样品安装面。

118. 发明授权

US07059709B2 Composition for forming piezoelectric, method for producing piezoelectric film, piezoelectric element and ink jet recording head 有权
标题翻译：用于形成压电体的组合物，制造压电薄膜的方法，压电元件和喷墨记录头
公开(公告)号：US07059709B2
公开(公告)日：2006-06-13
申请号：US10665572
申请日：2003-09-22
申请人： Motokazu Kobayashi , Makoto Kubota , Shinji Eritate , Fumio Uchida , Chiemi Shimizu , Kenji Maeda
发明人： Motokazu Kobayashi , Makoto Kubota , Shinji Eritate , Fumio Uchida , Chiemi Shimizu , Kenji Maeda
IPC分类号： B41J2/045 , H01L41/04
CPC分类号： B41J2/1645 , B41J2/1617 , B41J2/1646 , H01L41/318
摘要： A composition for forming a piezoelectric containing a dispersoid obtained from metallic compound, wherein the content of hafnium in the composition is 3,000 ppm or less.
摘要翻译：用于形成含有由金属化合物获得的分散质的压电体组合物，其中组合物中铪的含量为3,000ppm以下。

119. 发明申请

US20050082943A1 Piezoelectric element, ink jet recording head and producing method for piezoelectric element 有权
标题翻译：压电元件，喷墨记录头和压电元件的制造方法
公开(公告)号：US20050082943A1
公开(公告)日：2005-04-21
申请号：US10928277
申请日：2004-08-30
申请人： Makoto Kubota , Motokazu Kobayashi , Shinji Eritate , Hisao Suzuki , Fumio Uchida , Chiemi Shimizu , Kenji Maeda
发明人： Makoto Kubota , Motokazu Kobayashi , Shinji Eritate , Hisao Suzuki , Fumio Uchida , Chiemi Shimizu , Kenji Maeda
IPC分类号： B41J2/045 , B41J2/055 , B41J2/135 , B41J2/14 , B41J2/16 , H01L41/09 , H01L41/187 , H01L41/22 , H01L41/318 , H02N2/00
CPC分类号： B41J2/14233 , B41J2/14298 , B41J2/161 , B41J2/1617 , B41J2/1629 , B41J2/1645 , H01L41/0477 , H01L41/0478 , H01L41/0805 , H01L41/0973 , H01L41/318
摘要： A piezoelectric element including a vibrating plate, a lower electrode, a piezoelectric film and an upper electrode laminated in this order, wherein the lower electrode, the upper electrode and the piezoelectric film are formed by a perovskite type oxide while the vibrating plate is formed by a metal oxide, and a junction interface is substantially absent between the vibrating plate and the lower electrode, between the lower electrode and the piezoelectric film and between the piezoelectric film and the upper electrode.
摘要翻译：一种包括振动板，下电极，压电膜和上电极的压电元件，其顺序层叠，其中下电极，上电极和压电膜由钙钛矿型氧化物形成，而振动板由金属氧化物和接合界面基本上不存在于振动板和下部电极之间，下部电极和压电膜之间以及压电膜和上部电极之间。

120. 发明申请

US20050051273A1 Plasma processing apparatus 审中-公开
标题翻译：等离子体处理装置
公开(公告)号：US20050051273A1
公开(公告)日：2005-03-10
申请号：US10654010
申请日：2003-09-04
申请人： Kenji Maeda , Kenetsu Yokogawa , Tsuyoshi Yoshida
发明人： Kenji Maeda , Kenetsu Yokogawa , Tsuyoshi Yoshida
IPC分类号： C25B9/00 , H01J37/32 , H01L21/306 , H01L21/311
CPC分类号： H01J37/32082 , H01L21/31116
摘要： A plasma processing apparatus capable of processing a wafer having a diameter of 300 mm or greater with high accuracy and uniformity, the apparatus comprising a decompressable container 1, a stage 2 disposed within container 1 and supporting a wafer 3 thereon, a substantially circular conductive plate 7 disposed substantially in parallel with the wafer 3 and opposing the stage 2, and a high frequency power source 11 connected to the conductive plate 7 and supplying power to generate a plasma within a space interposed between the stage 2 and the conductive plate 7, characterized in that a frequency f1 of the power is within the range of 100 MHz
摘要翻译：一种能够以高精度和均匀性处理直径为300mm以上的晶片的等离子体处理装置，该装置包括可减压容器1，设置在容器1内并在其上支撑晶片3的载物台2，基本上圆形的导电板 7，其基本上平行于晶片3并与平台2相对，以及高频电源11，其连接到导电板7并且供应功率以在插入在载物台2和导电板7之间的空间内产生等离子体，其特征在于因为功率的频率f1相对于真空中的光C的速度和正在处理的晶片的直径D在100MHz

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