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1. 发明申请

US20050051273A1 Plasma processing apparatus 审中-公开
标题翻译：等离子体处理装置
公开(公告)号：US20050051273A1
公开(公告)日：2005-03-10
申请号：US10654010
申请日：2003-09-04
申请人： Kenji Maeda , Kenetsu Yokogawa , Tsuyoshi Yoshida
发明人： Kenji Maeda , Kenetsu Yokogawa , Tsuyoshi Yoshida
IPC分类号： C25B9/00 , H01J37/32 , H01L21/306 , H01L21/311
CPC分类号： H01J37/32082 , H01L21/31116
摘要： A plasma processing apparatus capable of processing a wafer having a diameter of 300 mm or greater with high accuracy and uniformity, the apparatus comprising a decompressable container 1, a stage 2 disposed within container 1 and supporting a wafer 3 thereon, a substantially circular conductive plate 7 disposed substantially in parallel with the wafer 3 and opposing the stage 2, and a high frequency power source 11 connected to the conductive plate 7 and supplying power to generate a plasma within a space interposed between the stage 2 and the conductive plate 7, characterized in that a frequency f1 of the power is within the range of 100 MHz
摘要翻译：一种能够以高精度和均匀性处理直径为300mm以上的晶片的等离子体处理装置，该装置包括可减压容器1，设置在容器1内并在其上支撑晶片3的载物台2，基本上圆形的导电板 7，其基本上平行于晶片3并与平台2相对，以及高频电源11，其连接到导电板7并且供应功率以在插入在载物台2和导电板7之间的空间内产生等离子体，其特征在于因为功率的频率f1相对于真空中的光C的速度和正在处理的晶片的直径D在100MHz

2. 发明授权

US08496781B2 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US08496781B2
公开(公告)日：2013-07-30
申请号：US11182793
申请日：2005-07-18
申请人： Kenetsu Yokogawa , Kenji Maeda , Masaru Izawa
发明人： Kenetsu Yokogawa , Kenji Maeda , Masaru Izawa
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , H05B31/26
CPC分类号： H01J37/32174 , H01J37/32082
摘要： The invention provides a plasma processing apparatus which is based upon a dry etching apparatus and which can inhibit the contamination of a work piece caused by sputtering onto a wall of a vacuum chamber, the occurrence of a foreign matter, the increase of a running cost for replacing the walls of the vacuum chamber and the deterioration of a rate of operation. The plasma processing apparatus according to the invention is based upon the dry etching apparatus having parallel plate structure and is characterized in that a low-pass filter having high impedance to a frequency of a high frequency power source for generating discharge, having small resistance to direct current and grounded is connected to an electrode for generating discharge which is arranged in a position opposite to the work piece and to which the high frequency power source for generating discharge is connected or a low-pass filter having small resistance to direct current and grounded and a direct-current power source connected in series with it are connected to the electrode for generating discharge.
摘要翻译：本发明提供了一种基于干蚀刻装置的等离子体处理装置，其可以抑制由溅射引起的工件对真空室的壁的污染，异物的发生，运行成本的增加更换真空室的壁和操作速度的恶化。根据本发明的等离子体处理装置基于具有平行板结构的干式蚀刻装置，其特征在于，具有高阻抗频率的低通滤波器，用于产生放电的高频电源的频率，具有较小的直接阻抗电流和接地连接到用于产生放电的电极，其布置在与工件相对的位置，并且用于产生放电的高频电源被连接到该电极上，或者具有对直流电阻和接地电阻小的低通滤波器，与其串联连接的直流电源连接到用于产生放电的电极。

3. 发明授权

US08425786B2 Plasma etching method and plasma etching apparatus 有权
标题翻译：等离子体蚀刻方法和等离子体蚀刻装置
公开(公告)号：US08425786B2
公开(公告)日：2013-04-23
申请号：US12700903
申请日：2010-02-05
申请人： Makoto Satake , Kenji Maeda , Kenetsu Yokogawa , Tsutomu Tetsuka , Tatehito Usui , Ryoji Nishio
发明人： Makoto Satake , Kenji Maeda , Kenetsu Yokogawa , Tsutomu Tetsuka , Tatehito Usui , Ryoji Nishio
IPC分类号： B44C1/22 , C25F3/00
CPC分类号： G11B5/84 , C23F4/00 , H01F10/14 , H01F10/16 , H01J37/321 , H01J37/32146 , H01J37/32449 , H01L43/12
摘要： In processing a magnetic film composed for example of Fe, Co or Ni formed on a substrate and a nonvolatile metal containing the same in a vacuum reactor using a plasma generating gas for generating plasma and a gas containing C and O, a power applied to an antenna for generating plasma is time-modulated, wherein the feeding of gas containing C and O to the vacuum reactor is synchronized with the time-modulated antenna power so that the supply of gas containing C and O to the vacuum reactor is suppressed when the antenna power is high and the gas containing C and O is fed to the vacuum reactor when the antenna power is low.
摘要翻译：在使用等离子体产生气体产生等离子体的真空反应器和含有C和O的气体中处理由例如形成在基板上的Fe，Co或Ni构成的磁膜和含有该磁膜的非挥发性金属，用于产生等离子体的天线是时间调制的，其中将包含C和O的气体馈送到真空电抗器与时间调制的天线功率同步，使得当天线向真空电抗器供应包含C和O的气体被抑制时功率高，当天线功率低时，含有C和O的气体进入真空电抗器。

4. 发明授权

US08029874B2 Plasma processing apparatus and method for venting the same to atmosphere 有权
标题翻译：等离子体处理装置和方法，用于将其排放到大气中
公开(公告)号：US08029874B2
公开(公告)日：2011-10-04
申请号：US12035759
申请日：2008-02-22
申请人： Hiroyuki Kobayashi , Kenji Maeda , Kenetsu Yokogawa , Masaru Izawa
发明人： Hiroyuki Kobayashi , Kenji Maeda , Kenetsu Yokogawa , Masaru Izawa
IPC分类号： H05H1/24
CPC分类号： C23C16/4401
摘要： In a plasma processing apparatus provided with control means, gas supply means includes a first gas supply path for supplying a vent gas into a processing chamber by way of a shower plate and a second gas supply path for supplying a vent gas into the processing chamber without via the shower plate, and the control means is capable of adjusting a flow rate of the vent gas of at least one of the first and second gas supply paths in such a manner that a pressure on a back side of the shower plate becomes a pressure that is a positive pressure relative to a pressure in the processing chamber and less than a withstand pressure of the shower plate.
摘要翻译：在设置有控制装置的等离子体处理装置中，气体供给装置包括用于通过淋浴板将排放气体供给到处理室中的第一气体供给路径和用于将排出气体供给到处理室中的第二气体供给路径，并且控制装置能够调节第一和第二气体供给路径中的至少一个的排出气体的流量，使得淋浴板的背侧的压力成为压力这是相对于处理室中的压力的正压力并且小于喷淋板的耐受压力。

5. 发明申请

US20100319854A1 PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：等离子体加工设备
公开(公告)号：US20100319854A1
公开(公告)日：2010-12-23
申请号：US12546783
申请日：2009-08-25
申请人： Kenetsu YOKOGAWA , Kenji Maeda , Tomoyuki Tamura
发明人： Kenetsu YOKOGAWA , Kenji Maeda , Tomoyuki Tamura
IPC分类号： H01L21/3065
CPC分类号： H01J37/3244 , H01J37/32091 , H01J37/32532 , H01J37/3266
摘要： In a plasma processing apparatus conducting surface processing on a sample to be processed with plasma, an upper electrode includes a shower plate having first gas holes bored through it, a conductor plate disposed at back of the shower plate and having second gas holes bored through it, an insulation plate disposed in a center part of the conductor plate and having third gas holes bored through it, and an antenna basic member unit disposed at back of the conductor plate and having a temperature control function unit and a gass distribution unit. First and second minute gaps are formed in a radial direction at an interface between the shower plate and the insulation plate, and at an interface between the insulation plate and the conductor plate, respectively. Centers of the first gas holes are shifted from centers of the third gas holes in a circumference or radial direction.
摘要翻译：在对等离子体处理的样品进行表面处理的等离子体处理装置中，上部电极包括具有穿过其的第一气孔的喷淋板，布置在喷淋板背面的导体板，并且具有穿过其的第二气孔设置在导体板的中心部分并具有穿过其的第三气孔的绝缘板，以及设置在导体板背面并具有温度控制功能单元和气体分配单元的天线基座部件单元。在喷淋板和绝缘板之间的界面处以及在绝缘板和导体板之间的界面处，分别在径向上形成第一和第二微小间隙。第一气孔的中心在第三气孔的中心沿周向或径向偏移。

6. 发明申请

US20080210376A1 PLASMA PROCESSING APPARATUS CAPABLE OF CONTROLLING PLASMA EMISSION INTENSITY 失效
标题翻译：能够控制等离子体排放强度的等离子体处理装置
公开(公告)号：US20080210376A1
公开(公告)日：2008-09-04
申请号：US12105018
申请日：2008-04-17
申请人： Kenji Maeda , Kenetsu Yokogawa , Tadamitsu Kanekiyo
发明人： Kenji Maeda , Kenetsu Yokogawa , Tadamitsu Kanekiyo
IPC分类号： C23F1/02 , C23C16/513
CPC分类号： H01J37/32935 , H01J37/32082 , H01J2237/3341
摘要： An antenna electrode having a substantially circular shape, is arranged on a plane of a processing vessel, which is located opposite to a stage for mounting a sample within the processing vessel, and positioned parallel to the stage. An emission monitor monitors emission intensity of plasma present in at least 3 different points along a radial direction of the antenna electrode. A control unit adjusts an energizing current supplied to an external coil for forming a magnetic field within the processing vessel. The control unit adjusts the energizing current supplied to the external coil based upon the monitoring result obtained from the emission monitor so as to control the emission intensity of the plasma to become uniform emission intensity.
摘要翻译：具有大致圆形形状的天线电极被布置在处理容器的平面上，该处理容器的平面位于与用于将样品安装在处理容器内并平行于平台的台的相对的位置。发射监视器监视沿着天线电极的径向至少3个不同点存在的等离子体的发射强度。控制单元调节提供给外部线圈的激励电流，以在处理容器内形成磁场。控制单元基于从发射监视器获得的监视结果来调节供给外部线圈的通电电流，以控制等离子体的发射强度变为均匀的发射强度。

7. 发明申请

US20060169410A1 Plasma processing apparatus capable of controlling plasma emission intensity 审中-公开
标题翻译：能够控制等离子体发射强度的等离子体处理装置
公开(公告)号：US20060169410A1
公开(公告)日：2006-08-03
申请号：US11065078
申请日：2005-02-25
申请人： Kenji Maeda , Kenetsu Yokogawa , Tadamitsu Kanekiyo
发明人： Kenji Maeda , Kenetsu Yokogawa , Tadamitsu Kanekiyo
IPC分类号： C23F1/00
CPC分类号： H01J37/32935 , H01J37/32082 , H01J2237/3341
摘要： An antenna electrode having a substantially circular shape, is arranged on a plane of a processing vessel, which is located opposite to a stage for mounting a sample within the processing vessel, and positioned parallel to the stage. An emission monitor monitors emission intensity of plasma present in at least 3 different points along a radial direction of the antenna electrode. A control unit adjusts an energizing current supplied to an external coil for forming a magnetic field within the processing vessel. The control unit adjusts the energizing current supplied to the external coil based upon the monitoring result obtained from the emission monitor so as to control the emission intensity of the plasma to become uniform emission intensity.
摘要翻译：具有大致圆形形状的天线电极被布置在处理容器的平面上，该处理容器的平面位于与用于将样品安装在处理容器内并平行于平台的台的相对的位置。发射监视器监视沿着天线电极的径向至少3个不同点存在的等离子体的发射强度。控制单元调节提供给外部线圈的激励电流，以在处理容器内形成磁场。控制单元基于从发射监视器获得的监视结果来调节供给外部线圈的通电电流，以控制等离子体的发射强度变为均匀的发射强度。

8. 发明授权

US08163652B2 Plasma processing method and plasma processing device 失效
标题翻译：等离子体处理方法和等离子体处理装置
公开(公告)号：US08163652B2
公开(公告)日：2012-04-24
申请号：US12199028
申请日：2008-08-27
申请人： Kenji Maeda , Tomoyuki Tamura , Hiroyuki Kobayashi , Kenetsu Yokogawa , Tadamitsu Kanekiyo
发明人： Kenji Maeda , Tomoyuki Tamura , Hiroyuki Kobayashi , Kenetsu Yokogawa , Tadamitsu Kanekiyo
IPC分类号： H01L21/302
CPC分类号： H01L21/67069 , H01J37/32082 , H01J37/32623 , H01J37/32706 , H01L21/31116 , H01L21/32136
摘要： A plasma processing method using plasma includes steps of applying current to a coil and introducing gas into a processing chamber, applying a bias power that does not generate plasma, applying a source power to generate plasma so that a plasma density distribution is high above an outer circumference of a semiconductor wafer and low above a center of the semiconductor wafer, and forming a shape of a sheath layer having a positive ion space charge directly above the semiconductor wafer so as to be convex in an upper direction from the semiconductor wafer, thereby eliminating foreign particles trapped in a boundary of the sheath layer having a positive ion space charge directly above the semiconductor wafer, generating plasma for processing the semiconductor wafer under a condition different from the conditions of the previous steps.
摘要翻译：使用等离子体的等离子体处理方法包括以下步骤：向线圈施加电流并将气体引入处理室，施加不产生等离子体的偏置功率，施加源功率以产生等离子体，使得等离子体密度分布高于外部半导体晶片的周围，并且低于半导体晶片的中心，并且在半导体晶片的正上方形成具有正离子空间电荷的鞘层的形状，以从半导体晶片向上方凸出，从而消除杂质颗粒捕获在具有正离子空间电荷的鞘层的边界上，直接位于半导体晶片上方，产生用于在与前述步骤的条件不同的条件下处理半导体晶片的等离子体。

9. 发明申请

US20110100555A1 Semiconductor Device Manufacturing Apparatus Capable Of Reducing Particle Contamination 审中-公开
标题翻译：具有降低粒子污染的半导体器件制造装置
公开(公告)号：US20110100555A1
公开(公告)日：2011-05-05
申请号：US12987448
申请日：2011-01-10
申请人： Hiroyuki Kobayashi , Kenji Maeda , Kenetsu Yokogawa , Masaru Izawa
发明人： Hiroyuki Kobayashi , Kenji Maeda , Kenetsu Yokogawa , Masaru Izawa
IPC分类号： C23F1/08 , C23C16/455 , C23C16/52 , C23C16/44
CPC分类号： C23C16/4401 , H01J37/32091 , H01J37/32678 , H01J2237/022
摘要： A semiconductor device manufacturing apparatus includes a process chamber, a conveyance chamber, a conveyance robot, a lock chamber, and a heating unit or temperature adjusting unit for reducing adherence of particles onto a substance to be processed by a thermo-phoretic force. The heating unit enables control of a temperature of the substance to be processed to be higher than a temperature of an inner wall or structural body of the process chamber or the conveyance chamber or the conveyance robot or the lock chamber, in conveying the substance to be processed. The temperature adjusting unit enables adjustment of a temperature of an inner wall or structural body of the process chamber or the conveyance chamber or the lock chamber to be lower than a temperature of the substance to be processed, in conveying the substance to be processed.
摘要翻译：半导体器件制造装置包括处理室，输送室，输送机器人，锁定室以及加热单元或温度调节单元，用于减少通过热电解力将颗粒附着到被处理物质上。加热单元能够将被处理物质的温度控制为高于处理室或输送室或输送机器人或锁定室的内壁或结构体的温度，将物质输送为处理。温度调节单元能够在输送待处理物质时将处理室或输送室或锁定室的内壁或结构体的温度调节为低于待处理物质的温度。

10. 发明申请

US20090250000A1 VACUUM PROCESSING APPARATUS 审中-公开
标题翻译：真空加工设备
公开(公告)号：US20090250000A1
公开(公告)日：2009-10-08
申请号：US12193815
申请日：2008-08-19
申请人： Hiroyuki Kobayashi , Kazuyuki Ono , Kenji Maeda , Masaru Izawa , Kenetsu Yokogawa
发明人： Hiroyuki Kobayashi , Kazuyuki Ono , Kenji Maeda , Masaru Izawa , Kenetsu Yokogawa
IPC分类号： C23C14/00 , F04B49/00
CPC分类号： H01L21/67201 , Y10T137/85986
摘要： A vacuum processing apparatus capable of attaining compatibility between the decrease for the number of foreign particles deposited on a sample in a lock chamber and improvement of the throughput, in which an open speed controllable valve is disposed and the depressurization speed can be controlled automatically by a controlling computer.
摘要翻译：一种真空处理装置，其能够获得在锁定室中沉积在样品上的异物的数量的减少与提高打开速度可控阀的通过量之间的相容性，并且可以通过以下步骤自动控制减压速度控制电脑。

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