专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

111. 发明授权

US06764926B2 Method for obtaining high quality InGaAsN semiconductor devices 失效
标题翻译：用于获得高质量InGaAsN半导体器件的方法
公开(公告)号：US06764926B2
公开(公告)日：2004-07-20
申请号：US10106472
申请日：2002-03-25
申请人： Tetsuya Takeuchi , Ying-Lan Chang , David P. Bour , Michael H. Leary , Michael R. T. Tan , Andy Luan
发明人： Tetsuya Takeuchi , Ying-Lan Chang , David P. Bour , Michael H. Leary , Michael R. T. Tan , Andy Luan
IPC分类号： H01L2100
CPC分类号： C30B25/02 , C23C16/301 , C23C16/4401 , C23C16/4405 , C30B29/403 , H01L21/02395 , H01L21/02463 , H01L21/02507 , H01L21/0254 , H01L21/02546 , H01L21/02579 , H01L21/0262
摘要： A method for making high quality InGaAsN semiconductor devices is presented. The method allows the making of high quality InGaAsN semiconductor devices using a single MOCVD reactor while avoiding aluminum contamination.
摘要翻译：提出了一种制造高品质InGaAsN半导体器件的方法。该方法允许使用单个MOCVD反应器制造高质量的InGaAsN半导体器件，同时避免铝污染。

112. 发明授权

US06448102B1 Method for nitride based laser diode with growth substrate removed 有权
标题翻译：消除生长衬底的基于氮化物的激光二极管的方法
公开(公告)号：US06448102B1
公开(公告)日：2002-09-10
申请号：US09277328
申请日：1999-03-26
申请人： Michael A. Kneissl , David P. Bour , Ping Mei , Linda T. Romano
发明人： Michael A. Kneissl , David P. Bour , Ping Mei , Linda T. Romano
IPC分类号： H01L2100
CPC分类号： H01L21/6835 , B82Y20/00 , H01L21/2007 , H01L27/153 , H01L33/0079 , H01L2221/68359 , H01L2221/68368 , H01L2224/83192 , H01L2224/83895 , H01L2924/01079 , H01S5/0217 , H01S5/34333 , H01S5/4025 , H01S5/4031
摘要： A method for placing nitride laser diode arrays on a thermally conducting substrate is described. The method uses an excimer laser to detach the nitride laser diode from the sapphire growth substrate after a thermally conducting substrate has been bonded to the side opposite the sapphire substrate.
摘要翻译：描述了将氮化物激光二极管阵列放置在导热衬底上的方法。该方法使用准分子激光器，在将导热衬底粘合到与蓝宝石衬底相对的一侧之后，将氮化物激光二极管与蓝宝石生长衬底分离。

113. 发明授权

US06430202B1 Structure and method for asymmetric waveguide nitride laser diode 有权
标题翻译：非对称波导氮化物激光二极管的结构和方法
公开(公告)号：US06430202B1
公开(公告)日：2002-08-06
申请号：US09288879
申请日：1999-04-09
申请人： Christian G. Van de Walle , David P. Bour , Michael A. Kneissl , Linda T. Romano
发明人： Christian G. Van de Walle , David P. Bour , Michael A. Kneissl , Linda T. Romano
IPC分类号： H01S520
CPC分类号： B82Y20/00 , H01S5/2004 , H01S5/2009 , H01S5/2031 , H01S5/305 , H01S5/3054 , H01S5/34333 , H01S2301/18
摘要： A structure and method for an asymmetric waveguide nitride laser diode without need of a p-type waveguide is disclosed. The need for a high aluminum tunnel barrier layer in the laser is avoided.
摘要翻译：公开了一种不需要p型波导的不对称波导氮化物激光二极管的结构和方法。避免了在激光器中需要高的铝隧道阻挡层。

114. 发明授权

US06285696B1 Algainn pendeoepitaxy led and laser diode structures for pure blue or green emission 有权
标题翻译： Algainn pendeoeitaxy led和激光二极管结构，用于纯蓝色或绿色发射
公开(公告)号：US06285696B1
公开(公告)日：2001-09-04
申请号：US09363314
申请日：1999-07-28
申请人： David P. Bour , Linda T. Romano , Michael A. Kneissl
发明人： David P. Bour , Linda T. Romano , Michael A. Kneissl
IPC分类号： H01S319
CPC分类号： H01L33/32 , H01L33/007
摘要： Group III-V nitride semiconductors are used as optoelectronic light emitters. The semiconductor alloy InGaN is used as the active region in nitride laser diodes and LEDs, as its bandgap energy can be tuned by adjusting the alloy composition, to span the entire visible spectrum. InGaN layers of high-indium content, as required for blue or green emission are difficult to grow, however, because the poor lattice mismatch between GaN and InGaN causes alloy segregation. In this situation, the inhomogeneous alloy composition results in spectrally impure emission, and diminished optical gain. To suppress segregation, the high-indium-content InGaN active region may be deposited over a thick InGaN layer, substituted for the more typical GaN. First depositing a thick InGaN layer establishes a larger lattice parameter than that of GaN. Consequently, a high indium content heterostructure active region grown over the thick InGaN layer experiences significantly less lattice mismatch compared to GaN. Therefore, it is less likely to suffer structural degradation due to alloy segregation. Thus, the thick GaN structure enables the growth of a high indium content active region with improved structural and optoelectronic properties, leading to LEDs with spectrally pure emission, and lower threshold laser diodes.
摘要翻译： III-V族氮化物半导体用作光电子发光体。半导体合金InGaN用作氮化物激光二极管和LED中的有源区，因为其带隙能量可以通过调整合金组成来调整，以跨越整个可见光谱。然而，蓝色或绿色发射所需的高铟含量的InGaN层难以生长，但是由于GaN和InGaN之间的不良晶格失配导致合金偏析。在这种情况下，不均匀的合金组成导致光谱不纯的发射，并减少了光学增益。为了抑制偏析，可以在厚的InGaN层上沉积高铟含量的InGaN有源区，代替更典型的GaN。首先沉积厚的InGaN层形成比GaN更大的晶格参数。因此，与GaN相比，在厚的InGaN层上生长的高铟含量的异质结构有源区域的晶格失配明显减少。因此，由于合金分离而不太可能遭受结构劣化。因此，厚的GaN结构能够增加具有改进的结构和光电性质的高铟含量活性区域，导致具有光谱纯发射的LED和较低阈值的激光二极管。

115. 发明授权

US5926726A In-situ acceptor activation in group III-v nitride compound semiconductors 失效
标题翻译： III-v族氮化物半导体中的原位受体激活
公开(公告)号：US5926726A
公开(公告)日：1999-07-20
申请号：US928250
申请日：1997-09-12
申请人： David P. Bour , G.A. Neville Connell , Donald R. Scifres
发明人： David P. Bour , G.A. Neville Connell , Donald R. Scifres
IPC分类号： C30B25/02 , H01L21/205 , H01L33/00 , H01L33/32
CPC分类号： H01L33/325 , C30B25/02 , C30B29/403 , C30B29/406 , H01L21/02458 , H01L21/0254 , H01L21/02579 , H01L21/0262 , H01L33/007
摘要： A method of manufacturing a p-type III-V nitride compound semiconductor utilizing vapor phase epitaxy is carried out in a MOCVD reactor by growing a III-V nitride compound semiconductor in the reactor employing a reaction gas containing a p-type impurity and then annealing in-situ the nitride compound semiconductor to bring about acceptor activation, the annealing carried out at a temperature below the growth temperature of the III-V nitride compound semiconductor during reactor cooldown. A nitrogen (N) reactant or precursor is provided in the reactor during the annealing step which can produce a reactive form of N capable of suppressing surface decomposition and does not produce atomic hydrogen. Also, acceptor activation is achieved through the employment of a cap layer comprising a n-type Group III-V nitride material, e.g., n-GaN, grown on the p-doped Group III-V nitride layer preventing the occurrence of hydrogenation of the underlying p-doped layer during cooldown. This non-post-growth activation eliminates the need for a subsequent thermal anneal step since any acceptor passivation is prevented in the first instance.
摘要翻译：利用气相外延制造p型III-V族氮化物半导体的方法在MOCVD反应器中通过在含有p型杂质的反应气体的反应器中生长III-V族氮化物半导体，然后退火原位氮化物化合物半导体引起受体活化，退火在反应器冷却期间在低于III-V族氮化物半导体的生长温度的温度下进行。在退火步骤中在反应器中提供氮（N）反应物或前体，其可以产生能够抑制表面分解并且不产生原子氢的反应性形式的N。此外，通过使用包含在p掺杂的III-V族氮化物层上生长的n型III-V族氮化物材料（例如n-GaN）的覆盖层来实现受体激活，防止发生氢化在冷却时的下面的p掺杂层。这种非后生长激活消除了对后续热退火步骤的需要，因为在第一种情况下防止了任何受体钝化。

116. 发明授权

US5708674A Semiconductor laser or array formed by layer intermixing 失效
标题翻译：半导体激光器或由层间混合形成的阵列
公开(公告)号：US5708674A
公开(公告)日：1998-01-13
申请号：US367554
申请日：1995-01-03
申请人： Kevin J. Beernink , Robert L. Thornton , David P. Bour , Thomas L. Paoli , Jack Walker
发明人： Kevin J. Beernink , Robert L. Thornton , David P. Bour , Thomas L. Paoli , Jack Walker
IPC分类号： H01S5/00 , H01L21/18 , H01S5/34 , H01S5/343 , H01S5/40 , H01S3/19
CPC分类号： B82Y20/00 , H01L21/182 , H01S5/34 , H01S5/4043 , H01S5/3413 , H01S5/3414 , H01S5/3432 , H01S5/34326 , H01S5/4087
摘要： A fabrication process and several structures for an index-guided laser diode formed by IILD or for a multiple wavelength laser array containing stacked semi-conductive active layers with quantum wells. The laser wavelength is varied laterally by effectively inactivating quantum wells which have transition wavelengths longer than that desired in the selected portion of the device. The quantum wells are inactivated by intermixing them with the surrounding high band gap semiconductor layers. To accomplish this intermixing without affecting the active layer in nearby regions, a finite source of impurity inducing or promoting intermixing is located in proximity to the quantum well to be intermixed, and the sample is annealed under conditions which allow for lateral patterning of the impurity-induced intermixing. Alternatively, the body is capped over the quantum well to be inactivated with a material which induces vacancies in semi-conductive material during thermal annealing, thus promoting vacancy-enhanced intermixing of the undesired quantum well. The intermixing can also be brought about by patterned annealing or selective laser heating which produces local annealing, or by use of two different caps. For the index-guided laser diode, the flanking index-guiding regions are formed by IILD from a buried impurity source, in which surface conditions are controlled to promote impurity diffusion to the flanking regions but not to the active stripe region between the flanking regions.
摘要翻译：用于由IILD或包含具有量子阱的堆叠半导电有源层的多波长激光器阵列形成的折射率引导激光二极管的制造工艺和若干结构。通过有效地使具有比器件所选部分中所需要的转换波长更长的量子阱来激活激光波长。量子阱通过将它们与周围的高带隙半导体层混合而失活。为了实现这种混合而不影响附近区域中的有源层，杂质诱导或促进混合的有限源位于量子阱附近，以便混合，并且样品在允许杂质 - 诱导混合。或者，通过在热退火期间在半导电材料中引起空位的材料将物体盖在量子阱上以使其失活，从而促进不期望的量子阱的空位增强的混合。混合还可以通过图案化退火或选择性激光加热产生局部退火，或通过使用两个不同的盖来实现。对于折射率引导激光二极管，侧翼引导区域由埋藏杂质源的IILD形成，其中控制表面条件以促进杂质扩散到侧翼区域而不是侧向区域之间的有源条纹区域。

117. 发明授权

US09127364B2 Reactor clean 有权
标题翻译：电抗器清洁
公开(公告)号：US09127364B2
公开(公告)日：2015-09-08
申请号：US12913688
申请日：2010-10-27
申请人： David P. Bour
发明人： David P. Bour
IPC分类号： C23C16/00 , C23C16/54 , C23C16/30 , C23C16/455 , H01L21/67 , H01L21/677
CPC分类号： C23C16/54 , C23C16/301 , C23C16/45519 , H01L21/67173 , H01L21/6719 , H01L21/6776
摘要： A method and apparatus for performing chemical vapor deposition (CVD) processes is provided. In one embodiment, the apparatus comprises a reactor body having a processing region, comprising a wafer carrier track having a wafer carrier disposed thereon, at least one sidewall having an exhaust assembly for exhausting gases from the processing region, a lid assembly disposed on the reactor body, comprising a lid support comprising a first showerhead assembly for supplying reactant gases to the processing region, a first isolator assembly for supplying isolation gases to the processing region, a second showerhead assembly for supplying reactant gases to the processing region, and a second isolator assembly for supplying isolation gases to the processing region, wherein the first showerhead assembly, the first isolator assembly, the second showerhead assembly, and the second isolator assembly are consecutively and linearly disposed next to each other.
摘要翻译：提供了一种用于进行化学气相沉积（CVD）工艺的方法和装置。在一个实施例中，该装置包括具有处理区域的反应器主体，该反应器主体包括具有设置在其上的晶片载体的晶片载体轨道，至少一个侧壁，具有用于从处理区域排出气体的排气组件，设置在反应器主体，包括盖支撑件，其包括用于将反应气体供应到处理区域的第一喷淋头组件，用于向处理区域供应隔离气体的第一隔离器组件，用于将反应气体供应到处理区域的第二喷头组件和第二隔离器用于向处理区域供应隔离气体的组件，其中第一喷淋头组件，第一隔离器组件，第二淋浴头组件和第二隔离器组件彼此相邻并线性地设置。

118. 发明授权

US08470619B2 Selective decomposition of nitride semiconductors to enhance LED light extraction 有权
标题翻译：选择性分解氮化物半导体以增强LED光提取
公开(公告)号：US08470619B2
公开(公告)日：2013-06-25
申请号：US12909548
申请日：2010-10-21
申请人： David P. Bour , Clifford F. Knollenberg , Christopher L. Chua
发明人： David P. Bour , Clifford F. Knollenberg , Christopher L. Chua
IPC分类号： H01L21/00
CPC分类号： H01L21/268 , H01L33/007 , H01L33/12 , H01L33/22
摘要： A method of texturing a surface within or immediately adjacent to a template layer of a LED is described. The method uses a texturing laser directed through a substrate to decompose and pit a semiconductor material at the surface to be textured. By texturing the surface, light trapping within the template layer is reduced. Furthermore, by patterning the arrangement of pits, metal coating each pit can be arranged to spread current through the template layer and thus through the n-doped region of a LED.
摘要翻译：描述了在LED的模板层内或紧邻LED的模板层内纹理化表面的方法。该方法使用引导通过基底的纹理激光来分解和凹陷待纹理表面的半导体材料。通过纹理化表面，减少了模板层内的光捕获。此外，通过图案化凹坑的布置，可以布置每个凹坑的金属涂层以将电流扩散通过模板层，从而穿过LED的n掺杂区域。

119. 发明授权

US08000366B2 Laser diode with high indium active layer and lattice matched cladding layer 有权
标题翻译：具有高铟活性层和晶格匹配包层的激光二极管
公开(公告)号：US08000366B2
公开(公告)日：2011-08-16
申请号：US12276173
申请日：2008-11-21
申请人： David P. Bour , Christopher L. Chua , Noble M. Johnson , Zhihong Yang
发明人： David P. Bour , Christopher L. Chua , Noble M. Johnson , Zhihong Yang
IPC分类号： H01S5/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0213 , H01S5/2013 , H01S5/3216
摘要： A semiconductor laser diode with a high indium content is provided with a lattice matched cladding layer or layers. One or both of the cladding layers may comprise bulk aluminum gallium indium nitride in the ratio of AlxGa1-x-yInyN and/or a short period superlattice structures of, for example, a plurality of alternating layer pairs of aluminum gallium indium nitride in the ratio of AlxGa1-x-yInyN and gallium indium nitride in the ratio of GasIn1-sN, providing a multi-quantum barrier (MQB) effect. Lattice matching of the cladding layer(s) and active layer reduce or eliminate strain, and the materials chosen for the cladding layers optimizes optical and carrier confinement. Alternatively, the lattice parameters may be selected to provide strain balanced MQBs, e.g., where the barrier layers are tensile-strained and the well layers compressed.
摘要翻译：具有高铟含量的半导体激光二极管设置有格子匹配包层。包覆层中的一个或两个可以包括Al x Ga 1-x-y In y N的比例的/或比如多个交替层叠的铝镓铟镓的短周期超晶格结构的块状铝镓氮化铟，的Al x Ga 1-x-y In y N和氮化镓铟，其比例为GasIn1-sN，提供多量子势垒（MQB）效应。包覆层和有源层的晶格匹配减少或消除应变，为包层选择的材料优化光学和载流子限制。或者，可以选择晶格参数以提供应变平衡的MQB，例如，其中阻挡层是拉伸应变的，并且阱层被压缩。

120. 发明授权

US07941024B2 Buried heterostructure device having integrated waveguide grating fabricated by single step MOCVD 失效
标题翻译：具有通过单步MOCVD制造的集成波导光栅的埋入异质结构器件
公开(公告)号：US07941024B2
公开(公告)日：2011-05-10
申请号：US12207521
申请日：2008-09-10
申请人： David P. Bour , Scott W. Corzine
发明人： David P. Bour , Scott W. Corzine
IPC分类号： G02B6/10
CPC分类号： H01S5/12 , B82Y20/00 , G02B6/131 , H01S5/1231 , H01S5/1237 , H01S5/2004 , H01S5/2009 , H01S5/2201 , H01S5/2214 , H01S5/227 , H01S5/3211 , H01S5/34313 , H01S5/34366 , H01S2301/173 , H01S2304/04
摘要： The device is an optoelectronic device or transparent waveguide device that comprises a growth surface, a growth mask, an optical waveguide core mesa and a cladding layer. The growth mask is located on the semiconductor surface and defines an elongate growth window having a periodic grating profile. The optical waveguide core mesa is located in the growth window and has a trapezoidal cross-sectional shape. The cladding layer covers the optical waveguide core mesa and extends over at least part of the growth mask. Such devices are fabricated by providing a wafer comprising a growth surface, growing an optical waveguide core mesa on the growth surface by micro-selective area growth at a first growth temperature and covering the optical waveguide core mesa with cladding material at a second growth temperature, lower than the first growth temperature.
摘要翻译：该器件是包括生长表面，生长掩模，光波导核心台面和包层的光电器件或透明波导器件。生长掩模位于半导体表面上并且限定具有周期性光栅轮廓的细长生长窗口。光波导核心台面位于生长窗口中，具有梯形横截面形状。包覆层覆盖光波导芯体台面并在生长掩模的至少一部分上延伸。这样的器件通过提供包括生长表面的晶片来制造，通过在第一生长温度下的微选择性区域生长在生长表面上生长光波导核心台面并且在第二生长温度下覆盖包含材料的光波导芯台面，低于第一生长温度。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式