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1. 发明授权

US06674090B1 Structure and method for planar lateral oxidation in active 有权
标题翻译：主动平面侧面氧化的结构和方法
公开(公告)号：US06674090B1
公开(公告)日：2004-01-06
申请号：US09472754
申请日：1999-12-27
申请人： Christopher L. Chua , Philip D. Floyd , Thomas L. Paoli , Decai Sun
发明人： Christopher L. Chua , Philip D. Floyd , Thomas L. Paoli , Decai Sun
IPC分类号： H01L2906
CPC分类号： H01L29/0649 , H01L21/76264 , H01L21/76281 , H01S5/2215
摘要： An active semiconductor device is made using planar lateral oxidation to define a core region that is surrounded by regions of buried oxidized semiconductor material in. The buried oxidized semiconductor material provides optical waveguiding, and or a defined electrical path.
摘要翻译：使用平面侧向氧化来制造有源半导体器件，以限定由埋入的氧化半导体材料的区域包围的芯区域。掩埋氧化半导体材料提供光波导和/或定义的电路径。

2. 发明授权

US06526083B1 Two section blue laser diode with reduced output power droop 有权
标题翻译：两部分蓝色激光二极管，输出功率降低
公开(公告)号：US06526083B1
公开(公告)日：2003-02-25
申请号：US09972361
申请日：2001-10-09
申请人： Michael A. Kneissl , Thomas L. Paoli
发明人： Michael A. Kneissl , Thomas L. Paoli
IPC分类号： H01S5026
CPC分类号： B82Y20/00 , H01S5/0265 , H01S5/0287 , H01S5/0625 , H01S5/06251 , H01S5/34333
摘要： A III-V nitride blue laser diode has an amplifier region and a modulator region. The amplifier region has a constant current to keep the region near the lasing threshold. The modulator region has a small varying forward current or reverse bias voltage which controls the light output of the laser. This two section blue laser diode requires much lower power consumption than directly modulated lasers which reduces transient heating and “drooping” of the light output.
摘要翻译： III-V族氮化物蓝色激光二极管具有放大器区域和调制器区域。放大器区域具有恒定电流以保持该区域接近激光阈值。调制器区域具有小的变化的正向电流或反向偏置电压，其控制激光器的光输出。这两部分蓝色激光二极管比直接调制的激光器要低得多的功耗，减少了瞬态加热和“下垂”光输出。

3. 发明授权

US5843802A Semiconductor laser formed by layer intermixing 失效
标题翻译：半导体激光由层间混合形成
公开(公告)号：US5843802A
公开(公告)日：1998-12-01
申请号：US923092
申请日：1997-09-04
申请人： Kevin J. Beernink , Robert L. Thornton , David P. Bour , Thomas L. Paoli , Jack Walker
发明人： Kevin J. Beernink , Robert L. Thornton , David P. Bour , Thomas L. Paoli , Jack Walker
IPC分类号： H01S5/00 , H01L21/18 , H01S5/34 , H01S5/343 , H01S5/40 , H01S3/18 , H01S3/19
CPC分类号： B82Y20/00 , H01L21/182 , H01S5/34 , H01S5/4043 , H01S5/3413 , H01S5/3414 , H01S5/3432 , H01S5/34326 , H01S5/4087
摘要： A method for fabricating a multiple layer semiconductor device, such as a laser, using impurity-induced, or vacancy-enhanced, intermixing of semiconductor layers to selectively inactivate quantum well regions in the device.
摘要翻译：一种用于制造诸如激光器的多层半导体器件的方法，其使用杂质诱导或空穴增强的半导体层的混合来选择性地使器件中的量子阱区域失活。

4. 发明授权

US5835253A Raster output scanning system with a super-elliptic laser beam source 失效
标题翻译：光栅输出扫描系统具有超椭圆激光束源
公开(公告)号：US5835253A
公开(公告)日：1998-11-10
申请号：US540140
申请日：1995-10-06
申请人： Thomas L. Paoli , Tibor Fisli
发明人： Thomas L. Paoli , Tibor Fisli
IPC分类号： B41J2/47 , G02B26/12 , G02B26/08
CPC分类号： B41J2/471 , G02B26/12
摘要： The optical path length of a raster output scanning (ROS) system is minimized by the use of a laser beam source for emitting a light beam with an enlarged divergence ratio. A super-elliptic light source beam with at least an 8:1 elliptic ratio of the major cross-scan axis to the minor scan axis will minimize the optical path length of a raster output scanning (ROS) system. The large divergence ratio of the super-elliptic light beam reduces the required focal lengths in the ROS optics while maintaining the desired numerical apertures and high energy throughput.
摘要翻译：光栅输出扫描（ROS）系统的光程长度通过使用用于发射具有扩大发散比的光束的激光束源来最小化。具有至少8：1主扫描轴与次扫描轴的椭圆率的超椭圆光源光束将使光栅输出扫描（ROS）系统的光程长度最小化。超椭圆光束的大发散比降低了ROS光学器件中所需的焦距，同时保持了所需的数值孔径和高能量通量。

5. 发明授权

US5717707A Index guided semiconductor laser diode with reduced shunt leakage currents 失效
标题翻译：具有降低分流漏电流的折射率半导体激光二极管
公开(公告)号：US5717707A
公开(公告)日：1998-02-10
申请号：US367549
申请日：1995-01-03
申请人： Kevin J. Beernink , David P. Bour , Thomas L. Paoli , Ross D. Bringans , Gregory J. Kovacs
发明人： Kevin J. Beernink , David P. Bour , Thomas L. Paoli , Ross D. Bringans , Gregory J. Kovacs
IPC分类号： H01S5/00 , H01S5/20 , H01S5/227 , H01S5/34 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/20 , H01S5/34326 , H01S5/204 , H01S5/2059 , H01S5/227 , H01S5/3413
摘要： An index-guided semiconductor laser diode made by impurity-induced layer disordering (IILD) of AlInP, GaInP and AlGaInP heterostructures. Several techniques for reducing parasitic leakage current via the n-type IILD regions, are described. These include removing the upper portions of the material outside the laser stripe, which can be accomplished by wet or dry etching of the material in a self-aligned manner. As an alternative, after formation of the waveguide, appropriately doped layers are grown over the disordered and as-grown regions of the structure to contact the active waveguide and simultaneously block parasitic shunt current from the disordered regions. Another method provides shallow inset insulating regions to replace the n-type disordered regions at the vicinity of a cap layer used to reduce a current barrier.
摘要翻译：由AlInP，GaInP和AlGaInP异质结构的杂质诱导层失调（IILD）制成的折射率半导体激光二极管。描述了通过n型IILD区域减少寄生漏电流的几种技术。这些包括去除激光条外部材料的上部，这可以通过以自对准的方式湿法或干蚀刻材料来实现。作为替代方案，在形成波导之后，在结构的无序和生长区域上生长适当掺杂的层以接触有源波导并同时阻挡来自无序区域的寄生并联电流。另一种方法提供浅插入绝缘区域来代替用于减少电流屏障的盖层附近的n型无序区域。

6. 发明授权

US5574491A Apparatus spot position control in an output device employing a linear array of light sources 失效
标题翻译：在使用光源的线性阵列的输出装置中进行设备点位置控制
公开(公告)号：US5574491A
公开(公告)日：1996-11-12
申请号：US195600
申请日：1994-02-14
申请人： Thomas L. Paoli
发明人： Thomas L. Paoli
IPC分类号： B41J2/44 , G01B11/00 , G02B26/10 , G05D3/12 , H04N1/047 , H04N1/113 , H04N1/12 , B41J2/435
CPC分类号： H04N1/0473 , H04N1/1135 , H04N1/12 , H04N2201/0471 , H04N2201/04758
摘要： In a method and apparatus for raster scanning optical output device, such as a laser printer or the like, an array of independently addressable light emitting devices, such as an array of solid state lasers, is used to control spot position on an image plane in the slow scan direction. The array is disposed such that the spots emitted from each element of the array impinge the image plane displaced in the slow scan direction from one another. The total distance between all the spots is less than the distance between fast scan direction scan lines. Only a single element of the array is operated per scan line, thus only a single spot is formed on the image plane per scan line. Control of which of the elements of the array emits a light beam per scan line allows control of the spot position in the slow scan direction for that scan line.
摘要翻译：在诸如激光打印机等的光栅扫描光输出装置的方法和装置中，使用诸如固态激光器阵列的可独立寻址的发光装置的阵列来控制图像平面上的光点位置慢扫描方向。阵列被布置成使得从阵列的每个元件发射的光斑撞击在慢扫描方向上彼此移位的图像平面。所有点之间的总距离小于快速扫描方向扫描线之间的距离。每个扫描线仅对阵列的单个元件进行操作，因此在每个扫描线上的图像平面上仅形成一个点。控制每个扫描线阵列中的哪个元件发射光束，可以控制该扫描线在慢扫描方向上的光点位置。

7. 发明授权

US5498869A Apparatus for wobble correction using an agile beam polygon ROS and all-spherical optics 失效
标题翻译：使用敏捷光束多边形ROS和全球光学元件进行摆动校正的装置
公开(公告)号：US5498869A
公开(公告)日：1996-03-12
申请号：US457606
申请日：1995-06-01
申请人： James J. Appel , Thomas L. Paoli
发明人： James J. Appel , Thomas L. Paoli
IPC分类号： G02B26/10 , B41J2/47 , G02B26/08 , G02B26/12 , G02B27/00 , G02F1/29 , G06K15/12 , H04N1/047 , H04N1/113 , H04N1/12 , H01J3/14
CPC分类号： G02B27/0031 , B41J2/471 , B41J2/473 , G02B26/0883 , G02B26/127 , G06K15/1219 , H04N1/0473 , H04N1/1135 , H04N1/12 , H04N2201/0471 , H04N2201/0476 , H04N2201/04763
摘要： Facet-to-facet pyramidal wobble is corrected without resorting to cylindrical optics by adapting agile beam concepts to provide real-time control of the light beam position on the photoreceptor. The agile beam is provided by either or both of a variable wavelength light source or a variable index of refraction prism. The position of the light beam is determined by either or both of a super linear position detector directly detecting the position of the light beam, or a facet detector and a look-up table for indirectly estimating the position of the light beam. By actively compensating for pyramidal wobble, the passive but expensive and difficult-to-position cylindrical optics can be replaced with cheap and easy-to-position spherical optics.
摘要翻译：通过适应敏捷光束概念以提供对感光体上的光束位置的实时控制，校正面到面的锥体摆动而不依赖于圆柱形光学元件。敏捷光束由可变波长光源或可变折射棱镜中的任一个或两者提供。光束的位置由直接检测光束位置的超线性位置检测器或小面检测器和用于间接估计光束位置的查找表中的任一个或两者来确定。通过积极补偿锥体摆动，被动但昂贵且难以置换的圆柱形光学元件可以用便宜且易于定位的球面光学器件代替。

8. 发明授权

US5497181A Dynamic control of individual spot exposure in an optical output device 失效
标题翻译：光输出装置中单个点曝光的动态控制
公开(公告)号：US5497181A
公开(公告)日：1996-03-05
申请号：US906145
申请日：1992-06-29
申请人： Thomas L. Paoli
发明人： Thomas L. Paoli
IPC分类号： B41J2/44 , G02B26/10 , G03B27/72 , G06K15/12 , H01L21/027 , G01D15/14
CPC分类号： G06K15/1214
摘要： The optical energy per pulse emitted by a laser source is accurately controlled from pulse to pulse by controlling the duration of the pulse according to the integrated value of its amplitude over time. A control signal is formed by converting a portion of the optical output of the laser to an electrical signal with a photodetecting element whose electrical output signal is integrated over time. The laser excitation is terminated when the integrated photocurrent reaches a set threshold level representing the optical energy desired for the pulse. Accurate control of the optical energy in each pulse is maintained in spite of error producing conditions such as unpredictable fluctuations in the laser drive signal, ambient temperature fluctuations, transient heating, and cumulative effects due to sequences of pulses.
摘要翻译：通过根据其随时间的幅度的积分值控制脉冲的持续时间，由脉冲到脉冲来精确地控制由激光源发射的每个脉冲的光能。通过将激光的光输出的一部分转换成具有电输出信号随时间积分的光检测元件的电信号而形成控制信号。当集成光电流达到表示脉冲所需的光能的设定阈值电平时，激光激发终止。尽管产生诸如激光驱动信号的不可预测的波动，环境温度波动，瞬态加热以及由于脉冲序列引起的累积效应的错误，仍维持每个脉冲中的光能的精确控制。

9. 发明授权

US5455429A Semiconductor devices incorporating p-type and n-type impurity induced layer disordered material 失效
标题翻译：掺杂p型和n型杂质的半导体器件诱导层无序材料
公开(公告)号：US5455429A
公开(公告)日：1995-10-03
申请号：US174912
申请日：1993-12-29
申请人： Thomas L. Paoli , John E. Northrup
发明人： Thomas L. Paoli , John E. Northrup
IPC分类号： H01L29/73 , H01L21/331 , H01L27/06 , H01L27/15 , H01L29/205 , H01L29/737 , H01S5/00 , H01S5/026 , H01S5/042 , H01S5/12 , H01S5/183 , H01S5/20 , H01L33/00 , H01L29/161 , H01L29/167
CPC分类号： H01S5/0424 , H01L27/0605 , H01L27/15 , H01S5/0261 , H01S5/0425 , H01S5/1228 , H01S5/18308 , H01S5/18341 , H01S5/2063
摘要： Novel semiconductor devices are monolithically defined with p-type and n-type wide bandgap material formed by impurity induced layer disordering of selected regions of multiple semiconductor layers. The devices are beneficially fabricated by simultaneously forming the n-type and p-type layer disordered regions with sufficiently abrupt transitions from disordered to as-grown material. The novel devices include a heterojunction bipolar transistor monolithically integrated with an edge emitting heterostructure laser or a surface emitting laser, a heterostructure surface emitting laser, a heterostructure surface emitting laser having active distributed feedback, devices containing multiple buried layers which are individually contacted such as p-n junction surface emitting lasers, carrier channeling devices, and "n-i-p-i" or hetero "n-i-p-i" devices, and novel interdigitated structures, such as optical detectors and distributed feedback lasers.
摘要翻译：新型的半导体器件通过由多个半导体层的选定区域的杂质诱导层失调而形成的p型和n型宽带隙材料单片地限定。这些器件有利地通过同时形成具有从无序到原始材料的足够突变的n型和p型层无序区域而被制造。新型器件包括与边缘发射异质结构激光器或表面发射激光器，异质结构表面发射激光器，具有有源分布反馈的异质结构表面发射激光器单元集成的异质结双极晶体管，包含单独接触的多个掩埋层的器件，例如pn 结面发射激光器，载流子引导装置以及“nipi”或异质“nipi”装置，以及诸如光学检测器和分布式反馈激光器之类的新颖的叉指结构。

10. 发明授权

US5438584A Dual polarization laser diode with quaternary material system 失效
标题翻译：具有四元材料系统的双极化激光二极管
公开(公告)号：US5438584A
公开(公告)日：1995-08-01
申请号：US173812
申请日：1993-12-23
申请人： Thomas L. Paoli , David P. Bour
发明人： Thomas L. Paoli , David P. Bour
IPC分类号： H01S5/028 , H01S5/06 , H01S5/062 , H01S5/10 , H01S5/34 , H01S5/343 , H01S5/40 , H01S3/103
CPC分类号： B82Y20/00 , H01S5/34 , H01S5/4031 , H01S5/028 , H01S5/0602 , H01S5/0612 , H01S5/06236 , H01S5/1039 , H01S5/3403 , H01S5/3404 , H01S5/34326
摘要： A semiconductor laser source using a strained active layer of GaAsP or InGaAsP or AlGaAsP to obtain semiconductor laser sources that emit TM-polarized light in the wavelength range of 600-870 nm. Preferably, the active layer is flanked by confining layers of AlGaAs or (AlGa).sub.0.52 In.sub.0.48 P. The active layer under proper conditions can also emit TE-polarized light. Hence, arrays of side-by-side orthoginally-polarized emitters, or switchable polarized emitters are feasible.
摘要翻译：使用GaAsP或InGaAsP或AlGaAsP的应变有源层的半导体激光源获得在600-870nm的波长范围内发射TM偏振光的半导体激光源。优选地，有源层的侧面是AlGaAs或（AlGa）0.52In0.48P的限制层。在适当条件下的有源层也可以发射TE偏振光。因此，并排的正原子极化发射器阵列或可切换的极化发射极是可行的。

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