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1. 发明授权

US06875627B2 Structure and method for index-guided buried heterostructure AlGaInN laser diodes 有权
标题翻译：折射率引导掩埋异质结AlGaInN激光二极管的结构与方法
公开(公告)号：US06875627B2
公开(公告)日：2005-04-05
申请号：US10025462
申请日：2001-12-26
申请人： David P. Bour , Michael A. Kneissl , Linda T. Romano
发明人： David P. Bour , Michael A. Kneissl , Linda T. Romano
IPC分类号： H01S5/227 , H01S5/20 , H01S5/323 , H01S5/343 , H01L21/20
CPC分类号： H01S5/32341 , H01S5/2004 , H01S5/2275 , H01S2301/18 , H01S2304/00
摘要： An index-guided buried heterostructure AlGalnN laser diode provides improved mode stability and low threshold current when compared to conventional ridge waveguide structures. A short period superlattice is used to allow adequate cladding layer thickness for confinement without cracking. The intensity of the light lost due to leakage is reduced by about 2 orders of magnitude with an accompanying improvement in the far-field radiation pattern when compared to conventional structures.
摘要翻译：与传统的脊波导结构相比，索引引导掩埋异质结AlGalnN激光二极管提供了改进的模式稳定性和低阈值电流。短周期超晶格用于允许足够的包层厚度进行约束而不会开裂。与常规结构相比，由于泄漏而损失的光的强度降低了约2个数量级，伴随着远场辐射图的改进。

2. 发明授权

US06574256B1 Distributed feedback laser fabricated by lateral overgrowth of an active region 有权
标题翻译：通过有源区域的横向过度生长制造的分布式反馈激光器
公开(公告)号：US06574256B1
公开(公告)日：2003-06-03
申请号：US09487409
申请日：2000-01-18
申请人： Daniel Hofstetter , Thomas L. Paoli , Linda T. Romano , Decai Sun , David P. Bour , Michael A. Kneissl , Chris G. Van de Walle , Noble M. Johnson
发明人： Daniel Hofstetter , Thomas L. Paoli , Linda T. Romano , Decai Sun , David P. Bour , Michael A. Kneissl , Chris G. Van de Walle , Noble M. Johnson
IPC分类号： H01S500
CPC分类号： B82Y20/00 , H01S5/0213 , H01S5/1228 , H01S5/2009 , H01S5/34333 , H01S2304/12
摘要： A distributed feedback structure includes a substrate material. An active layer has an alloy including at least one of aluminum, gallium, indium, and nitrogen. A first cladding, having an alloy including at least one of the aluminum, the gallium, the indium, and the nitrogen, is on a first side of the active layer. A second cladding, having an alloy including at least one of the aluminum, the gallium, the indium, and the nitrogen, is on a second side of the active layer. Periodic variations of refractive indices in at least one of the first and second claddings provide a distributed optical feedback.
摘要翻译：分布式反馈结构包括基板材料。有源层具有包括铝，镓，铟和氮中的至少一种的合金。具有包括铝，镓，铟和氮中的至少一种的合金的第一包层位于有源层的第一侧上。具有包括铝，镓，铟和氮中的至少一种的合金的第二覆层位于有源层的第二侧上。在第一和第二包层中的至少一个中的折射率的周期性变化提供分布式光学反馈。

3. 发明授权

US06389051B1 Structure and method for asymmetric waveguide nitride laser diode 有权
公开(公告)号：US06389051B1
公开(公告)日：2002-05-14
申请号：US09343939
申请日：1999-06-30
申请人： Christian G. Van de Walle , David P. Bour , Michael A. Kneissl , Linda T. Romano
发明人： Christian G. Van de Walle , David P. Bour , Michael A. Kneissl , Linda T. Romano
IPC分类号： H01S520
CPC分类号： B82Y20/00 , H01S5/2004 , H01S5/2009 , H01S5/2031 , H01S5/305 , H01S5/3054 , H01S5/34333
摘要： A structure and method for an asymmetric waveguide nitride laser diode without need of a p-type waveguide is disclosed. The need for a high aluminum tunnel barrier layer in the laser is avoided.

4. 发明授权

US06365429B1 Method for nitride based laser diode with growth substrate removed using an intermediate substrate 有权
标题翻译：使用中间基板去除生长衬底的基于氮化物的激光二极管的方法
公开(公告)号：US06365429B1
公开(公告)日：2002-04-02
申请号：US09276856
申请日：1999-03-26
申请人： Michael A. Kneissl , David P. Bour , Ping Mei , Linda T. Romano
发明人： Michael A. Kneissl , David P. Bour , Ping Mei , Linda T. Romano
IPC分类号： H01L2100
CPC分类号： H01L21/6835 , B82Y20/00 , H01L21/2007 , H01L27/153 , H01L33/0079 , H01L2221/68359 , H01L2221/68368 , H01L2224/83192 , H01L2224/83895 , H01L2924/01079 , H01S5/0217 , H01S5/34333 , H01S5/4025 , H01S5/4031
摘要： A method for placing nitride laser diode arrays on a thermally conducting substrate is described. The method uses an excimer laser to detach the nitride laser diode from the sapphire growth substrate after an intermediate substrate has been attached to the side opposite the sapphire substrate. A thermally conducting substrate is subsequently bonded to the side where the sapphire substrate was removed.
摘要翻译：描述了将氮化物激光二极管阵列放置在导热衬底上的方法。该方法使用准分子激光器在将中间衬底附着到与蓝宝石衬底相对的一侧附近后从蓝宝石生长衬底分离氮化物激光二极管。导热衬底随后与去除蓝宝石衬底的一侧接合。

5. 发明授权

US06757314B2 Structure for nitride based laser diode with growth substrate removed 有权
标题翻译：去除生长衬底的基于氮化物的激光二极管的结构
公开(公告)号：US06757314B2
公开(公告)日：2004-06-29
申请号：US09276913
申请日：1999-03-26
申请人： Michael A. Kneissl , David P. Bour , Ping Mei , Linda T. Romano
发明人： Michael A. Kneissl , David P. Bour , Ping Mei , Linda T. Romano
IPC分类号： H01S500
CPC分类号： H01L21/6835 , B82Y20/00 , H01L21/2007 , H01L27/153 , H01L33/0079 , H01L2221/68359 , H01L2221/68368 , H01L2224/83192 , H01L2224/83895 , H01L2924/01079 , H01S5/0217 , H01S5/34333 , H01S5/4025 , H01S5/4031
摘要： A structure for nitride laser diode arrays attached to a thermally conducting substrate is described where the sapphire growth substrate has been removed. The thermally conducting substrate is attached to the side opposite of the sapphire growth substrate.
摘要翻译：描述了附着到导热基底的氮化物激光二极管阵列的结构，其中已经去除了蓝宝石生长衬底。导热衬底附着在蓝宝石生长衬底的相反侧。

6. 发明授权

US06597717B1 Structure and method for index-guided, inner stripe laser diode structure 有权
标题翻译：折射率导向，内条激光二极管结构的结构和方法
公开(公告)号：US06597717B1
公开(公告)日：2003-07-22
申请号：US09443172
申请日：1999-11-19
申请人： Michael A. Kneissl , David P. Bour , Linda T. Romano , Brent S. Krusor , Noble M. Johnson
发明人： Michael A. Kneissl , David P. Bour , Linda T. Romano , Brent S. Krusor , Noble M. Johnson
IPC分类号： H01S500
CPC分类号： B82Y20/00 , H01S5/2214 , H01S5/222 , H01S5/2227 , H01S5/2231 , H01S5/34333
摘要： An inner stripe laser diode structure for GaN laser diodes is disclosed. Inner stripe laser diode structures provide a convenient means of achieving low threshold, single mode laser diodes. The structure of an inner stripe laser diode is modified to produce lateral index guiding.
摘要翻译：公开了一种用于GaN激光二极管的内条激光二极管结构。内部条纹激光二极管结构提供了实现低阈值单模激光二极管的便利手段。修改内部条纹激光二极管的结构以产生横向折射率引导。

7. 发明授权

US06567443B2 Structure and method for self-aligned, index-guided, buried heterostructure AlGalnN laser diodes 有权
标题翻译： AlCalnN激光二极管的自对准，折射率引导，掩埋异质结构的结构和方法
公开(公告)号：US06567443B2
公开(公告)日：2003-05-20
申请号：US09408415
申请日：1999-09-29
申请人： David P. Bour , Michael A. Kneissl , Linda T. Romano , Thomas L. Paoli , Christian G. Van de Walle
发明人： David P. Bour , Michael A. Kneissl , Linda T. Romano , Thomas L. Paoli , Christian G. Van de Walle
IPC分类号： H01S500
CPC分类号： B82Y20/00 , H01S5/2218 , H01S5/2222 , H01S5/2275 , H01S5/3211 , H01S5/34333
摘要： A self aligned, index-guided, buried heterostructure AlGalnN laser diode provides improved mode stability and low threshold current when compared to conventional ridge waveguide structures. A short period superlattice is used to allow adequate cladding layer thickness for confinement without cracking. The intensity of the light lost due to leakage is reduced by about 2 orders of magnitude with an accompanying improvement in the far-field radiation pattern when compared to conventional structures. The comparatively large p-contact area allowed by the self-aligned architecture contributes to a lower diode voltage and less heat during continuous wave operation of the laser diode.
摘要翻译：与传统的脊波导结构相比，自对准，折射率引导，埋入异质结AlGalnN激光二极管提供了改进的模式稳定性和低阈值电流。短周期超晶格用于允许足够的包层厚度进行约束而不会开裂。与常规结构相比，由于泄漏而损失的光的强度降低了约2个数量级，伴随着远场辐射图的改进。自对准结构允许的较大的p接触面积有助于在激光二极管的连续波动操作期间较低的二极管电压和较少的热量。

8. 发明授权

US06541292B2 Method for forming an asymmetric nitride laser diode 有权
公开(公告)号：US06541292B2
公开(公告)日：2003-04-01
申请号：US09998335
申请日：2001-12-03
申请人： Christian G. Van de Walle , David P. Bour , Michael A. Kneissl , Linda T. Romano
发明人： Christian G. Van de Walle , David P. Bour , Michael A. Kneissl , Linda T. Romano
IPC分类号： H01L2100
CPC分类号： B82Y20/00 , H01S5/2004 , H01S5/2009 , H01S5/2031 , H01S5/305 , H01S5/3054 , H01S5/34333 , H01S2301/18
摘要： A structure and method for an asymmetric waveguide nitride laser diode without need of a p-type waveguide is disclosed. The need for a high aluminum tunnel barrier layer in the laser is avoided.

9. 发明授权

US06345063B1 Algainn elog led and laser diode structures for pure blue or green emission 有权
标题翻译： Algainn elog led和激光二极管结构，用于纯蓝色或绿色发射
公开(公告)号：US06345063B1
公开(公告)日：2002-02-05
申请号：US09363251
申请日：1999-07-28
申请人： David P. Bour , Linda T. Romano , Michael A. Kneissl
发明人： David P. Bour , Linda T. Romano , Michael A. Kneissl
IPC分类号： H01S319
CPC分类号： H01L33/32 , H01L33/007
摘要： Group III-V nitride semiconductors are used as optoelectronic light emitters. The semiconductor alloy InGaN is used as the active region in nitride laser diodes and LEDs, as its bandgap energy can be tuned by adjusting the alloy composition, to span the entire visible spectrum. InGaN layers of high-indium content, as required for blue or green emission are difficult to grow, however, because the poor lattice mismatch between GaN and InGaN causes alloy segregation. In this situation, the inhomogeneous alloy composition results in spectrally impure emission, and diminished optical gain. To suppress segregation, the high-indium-content InGaN active region may be deposited over a thick InGaN layer, substituted for the more typical GaN. First depositing a thick InGaN layer establishes a larger lattice parameter than that of GaN. Consequently, a high indium content heterostructure active region grown over the thick InGaN layer experiences significantly less lattice mismatch compared to GaN. Therefore, it is less likely to suffer structural degradation due to alloy segregation. Thus, the thick GaN structure enables the growth of a high indium content active region with improved structural and optoelectronic properties, leading to LEDs with spectrally pure emission, and lower threshold laser diodes.
摘要翻译： III-V族氮化物半导体用作光电子发光体。半导体合金InGaN用作氮化物激光二极管和LED中的有源区，因为其带隙能量可以通过调整合金组成来调整，以跨越整个可见光谱。然而，蓝色或绿色发射所需的高铟含量的InGaN层难以生长，但是由于GaN和InGaN之间的不良晶格失配导致合金偏析。在这种情况下，不均匀的合金组成导致光谱不纯的发射，并减少了光学增益。为了抑制偏析，可以在厚的InGaN层上沉积高铟含量的InGaN有源区，代替更典型的GaN。首先沉积厚的InGaN层形成比GaN更大的晶格参数。因此，与GaN相比，在厚的InGaN层上生长的高铟含量的异质结构有源区域的晶格失配明显减少。因此，由于合金分离而不太可能遭受结构劣化。因此，厚的GaN结构能够增加具有改进的结构和光电性质的高铟含量活性区域，导致具有光谱纯发射的LED和较低阈值的激光二极管。

10. 发明授权

US06570898B2 Structure and method for index-guided buried heterostructure AlGalnN laser diodes 有权
公开(公告)号：US06570898B2
公开(公告)日：2003-05-27
申请号：US09408458
申请日：1999-09-29
申请人： David P. Bour , Michael A. Kneissl , Linda T. Romano , Thomas L. Paoli , Christian G. Van de Walle
发明人： David P. Bour , Michael A. Kneissl , Linda T. Romano , Thomas L. Paoli , Christian G. Van de Walle
IPC分类号： H01S500
CPC分类号： H01S5/32341 , H01S5/2004 , H01S5/2275 , H01S2301/18 , H01S2304/00
摘要： An index-guided buried heterostructure AlGaInN laser diode provides improved mode stability and low threshold current when compared to conventional ridge waveguide structures. A short period superlattice is used to allow adequate cladding layer thickness for confinement without cracking. The intensity of the light lost due to leakage is reduced by about 2 orders of magnitude with an accompanying improvement in the far-field radiation pattern when compared to conventional structures.

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