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111. 发明授权

US08780454B2 Wide angle lens system and photographing apparatus 有权
标题翻译：广角镜头系统和拍摄设备
公开(公告)号：US08780454B2
公开(公告)日：2014-07-15
申请号：US13089518
申请日：2011-04-19
申请人： Yong-jae Lee , Young-woo Park
发明人： Yong-jae Lee , Young-woo Park
IPC分类号： G02B15/14 , G02B3/02 , G02B15/177
CPC分类号： G02B15/177 , G02B13/04
摘要： A wide angle lens system includes a first lens group having a negative refractive power and a second lens group having a positive refractive power arranged from an object side. The first lens group includes a first lens of a meniscus shape having a convex surface toward the object side, a second lens having a concave surface toward the object side, and a third lens having a convex surface toward the object side, and the second lens group includes a fourth lens having a convex surface toward the object side, a fifth lens having a concave surface toward the object side, and a sixth lens of a meniscus shape having a concave surface toward the object side. A photographing apparatus includes the wide angle lens system.
摘要翻译：广角透镜系统包括具有负折光力的第一透镜组和具有从物体侧布置的正折光力的第二透镜组。第一透镜组包括具有朝向物体侧的凸面的弯液面形状的第一透镜，具有朝向物体侧的凹面的第二透镜和朝向物体侧的凸面的第三透镜，第二透镜具有朝向物体侧的凸面的第四透镜，朝向物体侧的凹面的第五透镜和朝向物体侧的凹面的弯液面状的第六透镜。拍摄装置包括广角镜头系统。

112. 发明授权

US08766443B2 Anisotropic conductive film composition, anisotropic conductive film, and semiconductor device bonded by the same 有权
标题翻译：各向异性导电膜组合物，各向异性导电膜和与其结合的半导体器件
公开(公告)号：US08766443B2
公开(公告)日：2014-07-01
申请号：US13710728
申请日：2012-12-11
申请人： Arum Yu , Nam Ju Kim , Kyoung Soo Park , Young Woo Park , Joon Mo Seo , Kyung Il Sul , Dong Seon Uh , Hyun Min Choi
发明人： Arum Yu , Nam Ju Kim , Kyoung Soo Park , Young Woo Park , Joon Mo Seo , Kyung Il Sul , Dong Seon Uh , Hyun Min Choi
IPC分类号： H01L23/48
CPC分类号： H01B1/20 , C08K3/08 , C08K5/41 , C08K9/02 , C09J7/10 , C09J9/02 , C09J2201/602 , C09J2203/326 , C09J2205/102 , C09J2463/00 , H01B1/22 , H01L23/5328 , H01L24/29 , H01L2224/2929 , H01L2224/29316 , H01L2224/29339 , H01L2224/29344 , H01L2224/29347 , H01L2224/29355 , H01L2224/2939 , H01L2224/29393 , H01L2224/29439 , H01L2224/29444 , H01L2224/29455 , H01L2224/32225 , H01L2924/07802 , H01L2924/07811 , H01L2924/15788 , H01L2924/0665 , H01L2924/00014 , H01L2924/00
摘要： An anisotropic conductive film composition for bonding an electronic device may include a hydrogenated bisphenol A epoxy monomer represented by Formula 1 or a hydrogenated bisphenol A epoxy oligomer represented by Formula 2: where n may be an integer from 1 to about 50.
摘要翻译：用于接合电子器件的各向异性导电膜组合物可以包括由式1表示的氢化双酚A环氧单体或由式2表示的氢化双酚A环氧低聚物：其中n可以是1至约50的整数。

113. 发明授权

US08748286B2 Method of fabricating a nonvolatile memory device 有权
标题翻译：制造非易失性存储器件的方法
公开(公告)号：US08748286B2
公开(公告)日：2014-06-10
申请号：US13198157
申请日：2011-08-04
申请人： Jong-Hoon Na , Young-Woo Park , Dong-Hwa Kwak , Tae-Yong Kim , Jee-Hoon Han , Jang-Hyun You , Dong-Sik Lee , Su-Jin Park
发明人： Jong-Hoon Na , Young-Woo Park , Dong-Hwa Kwak , Tae-Yong Kim , Jee-Hoon Han , Jang-Hyun You , Dong-Sik Lee , Su-Jin Park
IPC分类号： H01L21/76 , H01L29/00
CPC分类号： H01L27/0207 , H01L21/28273 , H01L27/11 , H01L27/11519 , H01L27/11524
摘要： A method of fabricating a nonvolatile memory device includes providing a substrate having active regions defined by a plurality of trenches, forming a first isolation layer on the substrate having the plurality of trenches, forming a sacrificial layer on the first isolation layer to fill the trenches, the sacrificial layer including a first region filling lower portions of the trenches and a second region filling portions other than the lower portions, removing the second region of the sacrificial layer, forming a second isolation layer on the first isolation layer and the first region of the sacrificial layer, forming air gaps in the trenches by removing the first region of the sacrificial layer, and removing a portion of the first isolation layer and a portion of the second isolation layer while maintaining the air gaps.
摘要翻译：一种制造非易失性存储器件的方法包括提供具有由多个沟槽限定的有源区的衬底，在具有多个沟槽的衬底上形成第一隔离层，在第一隔离层上形成牺牲层以填充沟槽，所述牺牲层包括填充所述沟槽的下部的第一区域和除所述下部以外的第二区域填充部分，去除所述牺牲层的所述第二区域，在所述第一隔离层上形成第二隔离层和在所述第一隔离层的所述第一区域牺牲层，通过去除牺牲层的第一区域在沟槽中形成气隙，以及在保持气隙的同时去除第一隔离层的一部分和第二隔离层的一部分。

114. 发明授权

US08729615B2 Non-volatile memory device with high speed operation and lower power consumption 有权
标题翻译：具有高速运行，功耗低的非易失性存储器件
公开(公告)号：US08729615B2
公开(公告)日：2014-05-20
申请号：US13248333
申请日：2011-09-29
申请人： Chang Hyun Lee , Young-Woo Park , Kye-Hyun Kyung , Cheon-An Lee , Sung-il Chang , Chul Bum Kim
发明人： Chang Hyun Lee , Young-Woo Park , Kye-Hyun Kyung , Cheon-An Lee , Sung-il Chang , Chul Bum Kim
IPC分类号： H01L27/108
CPC分类号： H01L21/823857 , G11C16/0483 , G11C16/30 , H01L27/105 , H01L27/11546 , H01L27/11556
摘要： A semiconductor memory device has a memory cell region and a peripheral region. The device includes low voltage transistors at the peripheral region having gate insulation films with different thicknesses. For example, a gate insulation film of a low voltage transistor used in an input/output circuit of the memory device may be thinner than the gate insulation film of a low voltage transistor used in a core circuit for the memory device. Since low voltage transistors used at an input/output circuit are formed to be different from low voltage transistors used at a core circuit or a high voltage pump circuit, high speed operation and low power consumption characteristics of a non-volatile memory device may be.
摘要翻译：半导体存储器件具有存储单元区域和周边区域。该器件包括具有不同厚度的栅极绝缘膜的外围区域的低电压晶体管。例如，在存储器件的输入/输出电路中使用的低电压晶体管的栅极绝缘膜可以比用于存储器件的核心电路中的低电压晶体管的栅极绝缘膜更薄。由于在输入/输出电路中使用的低压晶体管形成为与核心电路或高压泵浦电路所使用的低压晶体管不同，所以可以是非易失性存储器件的高速工作和低功耗特性。

115. 发明授权

US08675409B2 Non-volatile memory devices 有权
标题翻译：非易失性存储器件
公开(公告)号：US08675409B2
公开(公告)日：2014-03-18
申请号：US13463060
申请日：2012-05-03
申请人： Jong-Sun Sel , Jung-Dal Choi , Young-Woo Park , Jin-Taek Park
发明人： Jong-Sun Sel , Jung-Dal Choi , Young-Woo Park , Jin-Taek Park
IPC分类号： G11C11/34 , G11C16/04
CPC分类号： G11C16/0483 , G11C16/3427
摘要： A non-volatile memory device may include a semiconductor substrate including an active region at a surface thereof, a ground select line crossing the active region, and a string select line crossing the active region and spaced apart from the ground select line. A plurality of memory cell word lines may cross the active region between the ground select line and the string select line with about a same first spacing provided between adjacent ones of the plurality of word lines and between a last of the plurality of memory cell word lines and the string select line. A second spacing may be provided between the ground select line and a first of the plurality of memory cell word lines.
摘要翻译：非易失性存储器件可以包括半导体衬底，其包括其表面处的有源区，与有源区交叉的接地选择线，以及与有源区交叉并与地选线相隔的串选择线。多个存储单元字线可以与地线选择线和弦选择线之间的有源区域相交，并且与多个字线中的相邻字线之间以及多个存储单元字线中的最后一个之间提供大致相同的第一间隔和字符串选择行。可以在接地选择线和多个存储单元字线中的第一个之间提供第二间隔。

116. 发明授权

US08673053B2 Method of hardening an interface of carbon material using nano silicon carbide coating 有权
标题翻译：使用纳米碳化硅涂层硬化碳材料界面的方法
公开(公告)号：US08673053B2
公开(公告)日：2014-03-18
申请号：US13270656
申请日：2011-10-11
申请人： Young Hee Lee , Kang Pyo So , Eun Sun Kim , Young Woo Park
发明人： Young Hee Lee , Kang Pyo So , Eun Sun Kim , Young Woo Park
IPC分类号： C22C1/02 , H05B6/02 , B02C23/00
CPC分类号： B82Y30/00 , B82Y40/00 , C01B32/168 , C01B32/956 , C22C1/1036 , C22C1/1084 , C22C26/00
摘要： Disclosed is a method for hardening an interface of a carbon material by using nano silicon carbide coating. A carbon material-aluminum composite prepared by the disclosed method is light in weight, and has a high dynamic strength, and thus can be applied to currently used cars and aluminum wheels. Furthermore, the composite can be utilized as a material for aircrafts, spacecraft, ships, etc. requiring a high strength.
摘要翻译：公开了一种通过使用纳米碳化硅涂层来硬化碳材料的界面的方法。通过所公开的方法制备的碳材料 - 铝复合材料重量轻，并且具有高动态强度，因此可以应用于目前使用的汽车和铝轮毂。此外，复合材料可以用作需要高强度的飞机，航天器，船舶等的材料。

117. 发明申请

US20130252391A1 NONVOLATILE MEMORY DEVICE, METHOD OF MANUFACTURING THE NONVOLATILE MEMORY DEVICE, AND MEMORY MODULE AND SYSTEM INCLUDING THE NONVOLATILE MEMORY DEVICE 有权
公开(公告)号：US20130252391A1
公开(公告)日：2013-09-26
申请号：US13896819
申请日：2013-05-17
申请人： Jae-goo Lee , Young-woo Park , Byung-kwan You , Dong-sik Lee , Sang-yong Park
发明人： Jae-goo Lee , Young-woo Park , Byung-kwan You , Dong-sik Lee , Sang-yong Park
IPC分类号： H01L29/66
CPC分类号： H01L27/11582 , H01L27/11565 , H01L27/1157 , H01L27/11578 , H01L29/66477 , H01L29/7926
摘要： A nonvolatile memory device includes a substrate, a channel layer protruding from the substrate, a gate conductive layer surrounding the channel layer, a gate insulating layer disposed between the channel layer and the gate conductive layer, and a first insulating layer spaced apart from the channel layer and disposed on the top and bottom of the gate conductive layer. The gate insulating layer extends between the gate conductive layer and the first insulating layer.

118. 发明授权

US08522115B2 Flash memory device and memory system comprising same 有权
标题翻译：闪存器件和包括其的存储器系统
公开(公告)号：US08522115B2
公开(公告)日：2013-08-27
申请号：US12898843
申请日：2010-10-06
申请人： Ju hyung Kim , Chang Seok Kang , Young Woo Park , Jung Dal Choi , Jong-Yeon Kim
发明人： Ju hyung Kim , Chang Seok Kang , Young Woo Park , Jung Dal Choi , Jong-Yeon Kim
IPC分类号： G11C29/00
CPC分类号： G06F11/1068 , G11C2029/0411
摘要： A flash memory device provided here comprises a user data area storing user data; and a security data area storing security data. The security data area stores a security data pattern in which first groups of memory cells storing security data are arranged respectively between second groups of memory cells storing dummy data.
摘要翻译：这里提供的闪存装置包括存储用户数据的用户数据区域; 以及存储安全数据的安全数据区。安全数据区域存储其中存储有安全数据的第一组存储单元分别布置在存储虚拟数据的第二组存储单元之间的安全数据模式。

119. 发明申请

US20130126788A1 Electronic device using anisotropic conductive composition and film 有权
标题翻译：使用各向异性导电组合物和薄膜的电子装置
公开(公告)号：US20130126788A1
公开(公告)日：2013-05-23
申请号：US13680893
申请日：2012-11-19
申请人： Kyoung Soo PARK , Nam Joo KIM , Young Woo PARK , Joon Mo SEO , Kyung Il SUL , Dong Seon UH , Arum YU , Hyun Min CHOI , Jae Sun HAN
发明人： Kyoung Soo PARK , Nam Joo KIM , Young Woo PARK , Joon Mo SEO , Kyung Il SUL , Dong Seon UH , Arum YU , Hyun Min CHOI , Jae Sun HAN
IPC分类号： H01B1/12
CPC分类号： H01B1/22 , C09J9/02 , H01B1/12 , H01B1/122 , H01R4/04 , H05K3/323
摘要： An electronic device includes a connection material formed from an adhesive composition that includes: a polymer resin; a cationic polymerization catalyst represented by Formula 1; and an organic base, where, in Formula 1, R1 may be selected from the group of hydrogen, C1-C6 alkyl, C6-C14 aryl, —C(═O)R4, —C(═O)OR5, and —C(═O)NHR6 (in which R4, R5, and R6 may each independently be selected from C1-C6 alkyl and C6-C14 aryl), R2 may be C1-C6 alkyl, and R3 may be selected from the group of a nitrobenzyl group, a dinitrobenzyl group, a trinitrobenzyl group, a benzyl group, a C1-C6 alkyl-substituted benzyl group, and a naphthylmethyl group.
摘要翻译：电子装置包括由粘合剂组合物形成的连接材料，所述粘合剂组合物包括：聚合物树脂; 由式1表示的阳离子聚合催化剂; 有机碱，其中，在式1中，R 1可以选自氢，C 1 -C 6烷基，C 6 -C 14芳基，-C（= O）R 4，-C（= O）OR 5和-C （= O）NHR 6（其中R 4，R 5和R 6可各自独立地选自C 1 -C 6烷基和C 6 -C 14芳基），R 2可以是C 1 -C 6烷基，R 3可以选自二硝基苄基，三硝基苄基，苄基，C1-C6烷基取代的苄基和萘基甲基。

120. 发明申请

US20130017226A1 TNF-A and TWEAK Dual Antagonist for the Prophylaxis and Treatment of Autoimmune Diseases 有权
标题翻译： TNF-A和TWEAK双重拮抗剂预防和治疗自身免疫性疾病
公开(公告)号：US20130017226A1
公开(公告)日：2013-01-17
申请号：US13635868
申请日：2011-03-18
申请人： Young Woo Park , Ki Won Jo , Srok Ho Yoo , Jung Yu , Dong Ji Kim , Sun-Ha Yoon , Eun Jung Song , Eun Kyung Lee , Jin Mi Oh , Kyu Won Cho , Mi La Cho , Ho Youn Kim , Mi Kyung Park , Hye Jwa Oh , Jin Sil Park , Yun Ju Woo , Jae Kyeong Byun , Jun Geol Ryu
发明人： Young Woo Park , Ki Won Jo , Srok Ho Yoo , Jung Yu , Dong Ji Kim , Sun-Ha Yoon , Eun Jung Song , Eun Kyung Lee , Jin Mi Oh , Kyu Won Cho , Mi La Cho , Ho Youn Kim , Mi Kyung Park , Hye Jwa Oh , Jin Sil Park , Yun Ju Woo , Jae Kyeong Byun , Jun Geol Ryu
IPC分类号： C07K19/00 , C12N15/63 , C12N1/21 , C12N5/10 , A61K38/17 , A61P19/04 , A61P7/06 , A61P3/10 , A61P19/02 , A61P25/00 , A61P17/00 , A61P21/00 , C12N15/62 , A61P37/06
CPC分类号： C07K14/525 , C07K14/70575 , C07K2319/32 , Y10S514/814 , Y10S514/885 , Y10S514/886 , Y10S514/903
摘要： The present invention relates to TNFR2-TWEAKR fusion protein, more precisely to TNFR2-TWEAKR fusion protein acting as a double-antagonist to TNF-α and TWEAK, known as major causes of autoimmune arthritis which is one of autoimmune diseases. When the composition comprising TNFR2-TWEAKR fusion protein was treated to Th17 cells, the secretion of the inflammatory cytokine IL-17 was reduced but the secretion of the anti-inflammatory cytokine IL-10 generated in Treg cells was increased. Such effect of TNFR2-TWEAKR fusion protein was far greater than that of a single protein such as TNFR2-Fc or TWEAK-Fc. The TNFR2-TWEAKR fusion protein of the present invention has not only excellent treatment effect on arthritis in CIA mouse model not also excellent treatment effect on autoimmune rheumatoid arthritis by increasing the expression of Treg, the immune suppressive cells. Therefore, the TNFR2-TWEAKR fusion protein of the present invention can be effectively used as an active ingredient for the composition for the prevention and treatment of autoimmune disease.
摘要翻译：本发明涉及TNFR2-TWEAKR融合蛋白，更确切地说，作为TNF-α和TWEAK的双拮抗剂的TNFR2-TWEAKR融合蛋白，被称为自身免疫性疾病之一的自身免疫性关节炎的主要原因。当将包含TNFR2-TWEAKR融合蛋白的组合物治疗至Th17细胞时，炎性细胞因子IL-17的分泌减少，但在Treg细胞中产生的抗炎细胞因子IL-10的分泌增加。 TNFR2-TWEAKR融合蛋白的这种作用远远大于单一蛋白如TNFR2-Fc或TWEAK-Fc的这种作用。本发明的TNFR2-TWEAKR融合蛋白不仅对CIA小鼠模型的关节炎具有优异的治疗作用，而且通过增加免疫抑制细胞Treg的表达，对自身免疫性类风湿性关节炎也不是很好的治疗效果。因此，本发明的TNFR2-TWEAKR融合蛋白可以有效地用作预防和治疗自身免疫性疾病的组合物的活性成分。

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