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91. 发明授权

US06559068B2 Method for improving inversion layer mobility in a silicon carbide metal-oxide semiconductor field-effect transistor 有权
标题翻译：一种提高碳化硅金属氧化物半导体场效应晶体管的反层迁移率的方法
公开(公告)号：US06559068B2
公开(公告)日：2003-05-06
申请号：US09894089
申请日：2001-06-28
申请人： Dev Alok , Emil Arnold , Richard Egloff , Satyendranath Mukherjee
发明人： Dev Alok , Emil Arnold , Richard Egloff , Satyendranath Mukherjee
IPC分类号： H01L21469
CPC分类号： H01L21/049
摘要： A method for improving inversion layer mobility in a silicon carbide metal-oxide semiconductor field-effect transistor (MOSFET) is provided. Specifically, the present invention provides a method for applying an oxide layer to a silicon carbide substrate so that the oxide-substrate interface of the resulting SiC MOSFET is improved. The method includes forming the oxide layer in the presence of metallic impurities.
摘要翻译：提供了一种用于提高碳化硅金属氧化物半导体场效应晶体管（MOSFET）中的反型层迁移率的方法。具体地，本发明提供了一种将氧化物层施加到碳化硅衬底上，使得所得SiC MOSFET的氧化物 - 衬底界面得到改善的方法。该方法包括在金属杂质存在下形成氧化物层。

92. 发明授权

US06528433B2 Method for monitoring nitrogen processes 有权
标题翻译：氮过程监测方法
公开(公告)号：US06528433B2
公开(公告)日：2003-03-04
申请号：US09881432
申请日：2001-06-14
申请人： Thomas Gärtner , Alexandra Lamprecht , Dietmar Ottenwälder , Jörg Schulze
发明人： Thomas Gärtner , Alexandra Lamprecht , Dietmar Ottenwälder , Jörg Schulze
IPC分类号： H01L21469
CPC分类号： H01L21/0217 , H01L21/0214 , H01L21/02247 , H01L21/02255 , H01L21/02326 , H01L21/02337 , H01L21/31662
摘要： The novel method allows monitoring of nitrogen processes by making use of the fact that the incorporation of nitrogen near the surface in silicon, or in a thin silicon nitride layer on the silicon surface, inhibits the diffusion of oxygen during the subsequent thermal oxidation. Accordingly, the oxidation rate of the thermal oxidation is reduced and the growth of the oxide layer on the silicon surface is inhibited. The thickness of the oxide layer is thus used as a measure for the nitrogen content, i.e., for the quality of the nitrogen process.
摘要翻译：新颖的方法允许通过利用在硅表面附近的氮或在硅表面上的薄氮化硅层中掺入氮来抑制氧在随后的热氧化过程中扩散的事实来监测氮过程。因此，热氧化的氧化速率降低，并且硅表面上的氧化物层的生长被抑制。因此，氧化物层的厚度用作氮含量的量度，即氮气工艺的质量。

93. 发明授权

US06524967B1 Method for incorporating nitrogen into a dielectric layer using a special precursor 有权
标题翻译：使用特殊前体将氮掺入电介质层的方法
公开(公告)号：US06524967B1
公开(公告)日：2003-02-25
申请号：US09630083
申请日：2000-08-01
申请人： Prasad V. Alluri
发明人： Prasad V. Alluri
IPC分类号： H01L21469
CPC分类号： C23C16/308 , C07F5/003 , C07F7/003 , C07F9/005 , H01L21/28568 , H01L21/31691
摘要： A metal-organic precursor suitable for use in a chemical vapor deposition formation of dielectric layer is disclosed. The precursor comprises a moiety that includes a first metal atom, an oxygen atom, and a nitrogen atom. The oxygen atom is chemically bonded to the metal atom and to the nitrogen atom. The first metal atom may be a Group III, Group IV, or Group V transition metals such as yttrium, lanthanum, titanium, zirconium, hafnium, niobium, and tantalum or another metal such as aluminum. The precursor may include one or more alkoxy groups bonded to the first metal atom. The precursor may be characterized as a M(OCR3)X−Y−Z(ONR2)Y(OSiR3)Z molecule where Y is an integer from 1 to (X−1), Z is an integer from 0 to X−1, X is an integer from 3 to 5 depending upon the valency of M and (Y+Z) is less than or equal to X. In one embodiment the precursor further includes one or more siloxy or alkyl siloxy groups bonded to the first metal atom. The precursor is suitable for chemical vapor deposition process used to deposit a dielectric layer on a semiconductor substrate. In this embodiment, the dielectric layer may be intended as a gate dielectric layer or a capacitor dielectric layer.
摘要翻译：公开了一种适用于介电层化学气相沉积形成的金属有机前驱体。前体包括包含第一金属原子，氧原子和氮原子的部分。氧原子与金属原子和氮原子化学键合。第一金属原子可以是III族，IV族或V族过渡金属如钇，镧，钛，锆，铪，铌和钽，或另一种金属如铝。前体可以包括键合到第一金属原子上的一个或多个烷氧基。前体可以表征为M（OCR3）XYZ（ONR2）Y（OSiR3）Z分子，其中Y是从1到（X-1）的整数，Z是从0到X-1的整数，X是整数根据M和（Y + Z）的化合价，3至5是小于或等于X.在一个实施方案中，前体还包括键合到第一金属原子上的一个或多个甲硅烷氧基或烷基甲硅烷氧基。前体适用于在半导体衬底上沉积介电层的化学气相沉积工艺。在该实施例中，电介质层可以用作栅极介电层或电容器介电层。

94. 发明授权

US06495478B1 Reduction of shrinkage of poly(arylene ether) for low-K IMD 有权
标题翻译：降低聚（亚芳基醚）对于低K IMD的收缩率
公开(公告)号：US06495478B1
公开(公告)日：2002-12-17
申请号：US09336801
申请日：1999-06-21
申请人： Syun-Ming Jang
发明人： Syun-Ming Jang
IPC分类号： H01L21469
CPC分类号： H01L21/02118 , H01L21/02282 , H01L21/31144 , H01L21/312 , H01L21/76801 , H01L21/7681 , H01L21/76828
摘要： A method for forming upon a substrate employed within a microelectronics fabrication a dielectric layer. There is provided a substrate upon which is formed a patterned microelectronics layer. There is then formed upon and over the substrate at least one low dielectric constant dielectric layer formed employing a spin-on-polymer (SOP) low dielectric constant dielectric material. There is then cured the low dielectric constant dielectric layer at an elevated temperature. There is then subsequently annealed the low dielectric constant dielectric layer at a temperature selected to be lower than the curing temperature For a selected time interval so as to attenuate shrinkage and stabilize physical and chemical properties of the dielectric layer
摘要翻译：一种用于在微电子制造中使用的衬底上形成介电层的方法。提供了一个基板，在其上形成图案化的微电子层。然后在衬底上形成至少一个使用旋涂聚合物（SOP）低介电常数介电材料形成的低介电常数介电层。然后在升高的温度下固化低介电常数介电层。然后在选择低于固化温度的温度下对低介电常数电介质层进行退火。对于所选择的时间间隔，以减小收缩并稳定介电层的物理和化学性质

95. 发明授权

US06465371B2 Method for manufacturing zirconium oxide film for use in semiconductor device 失效
标题翻译：用于制造用于半导体器件的氧化锆膜的方法
公开(公告)号：US06465371B2
公开(公告)日：2002-10-15
申请号：US09884134
申请日：2001-06-20
申请人： Chan Lim
发明人： Chan Lim
IPC分类号： H01L21469
CPC分类号： H01L21/0228 , C23C16/405 , C23C16/45527 , C23C16/45534 , C30B25/02 , C30B29/16 , H01L21/02189 , H01L21/0234 , H01L21/02348 , H01L21/31691
摘要： A method for manufacturing a zirconium oxide film for use in a semiconductor device by using an atomic layer deposition (ALD) which begins with setting a wafer in a reaction chamber. Thereafter, a zirconium source material of Zr(OC(CH3)3)4 (zirconium tetra-tert-butoxide) is supplied into the reaction chamber and then, an unreacted Zr(OC(CH3)3)4 is removed by a N2 purge or a vacuum purge. Subsequently, an oxygen source material is supplied into the reaction chamber, wherein the oxygen source material is selected from the group consisting of vaporized water (H2O), O2 gas, N2O gas and O3 gas. Finally, an unreacted oxygen source material is purged out from the reaction chamber.
摘要翻译：一种通过使用从反应室中设置晶片开始的原子层沉积（ALD）制造用于半导体器件的氧化锆膜的方法。然后，将Zr（OC（CH 3）3）4（四叔丁醇锆）的锆源材料供给到反应室中，然后通过N 2吹扫除去未反应的Zr（OC（CH 3）3）4 或真空吹扫。随后，将氧源材料供应到反应室中，其中氧源材料选自蒸发水（H 2 O），O 2气体，N 2 O气体和O 3气体。最后，将未反应的氧源材料从反应室中排出。

96. 发明授权

US06455444B2 Semiconductor device having a multilayer interconnection structure 有权
标题翻译：具有多层互连结构的半导体器件
公开(公告)号：US06455444B2
公开(公告)日：2002-09-24
申请号：US09773594
申请日：2001-02-02
申请人： Katsumi Kakamu
发明人： Katsumi Kakamu
IPC分类号： H01L21469
CPC分类号： H01L21/76835 , H01L21/02131 , H01L21/02211 , H01L21/02274 , H01L21/02304 , H01L21/02362 , H01L21/31629 , H01L21/76801 , H01L21/76807 , H01L21/76832 , H01L21/76834 , H01L23/5329 , H01L27/10882 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： A semiconductor device includes a F-doped interlayer insulation film and a high-refractive index insulation film having a refractive index higher than a refractive index of the F-doped interlayer insulation film, such that the high-refractive index insulation film is disposed at least one of a top side and a bottom side of the F-doped interlayer insulation film.
摘要翻译：半导体器件包括F掺杂层间绝缘膜和折射率高于掺杂F的层间绝缘膜的折射率的高折射率绝缘膜，使得高折射率绝缘膜至少设置 F掺杂层间绝缘膜的顶侧和底侧之一。

97. 发明授权

US06455440B1 Method for preventing polysilicon stringer in memory device 有权
标题翻译：防止存储器件中多晶硅桁条的方法
公开(公告)号：US06455440B1
公开(公告)日：2002-09-24
申请号：US09903668
申请日：2001-07-13
申请人： Pei-Ren Jeng
发明人： Pei-Ren Jeng
IPC分类号： H01L21469
CPC分类号： H01L21/28273 , H01L29/42324 , Y10S438/911
摘要： In accordance with the present invention, a method for preventing polysilicon stringers in memory devices is disclosed. The key aspect of the present invention is the formation of a floating gate structure with multi-level oxidation rates the lower portion of the floating gate structure the higher oxidation rate, such as a floating gate structure with two polysilicon layers of different doping concentration or crystallinity the lower polysilicon layer the higher doping concentration, or the lower polysilicon layer the higher crystallinity. Therefore, in a later oxidation process a desired profile of the floating gate structure for etch process defining word lines is formed, that is from lower portion to higher portion of the floating gate structure an increasing width profile is formed. The width of the upper portion of the floating gate structure is bigger than that of the lower portion of the floating gate structure. Thus, the anisotropic etching process of isolating the word lines maintains an ideal etching result, in other words, the polysilicon stringers in the etched region which short out the word lines is eliminated.
摘要翻译：根据本发明，公开了一种用于防止存储器件中多晶硅桁条的方法。本发明的关键方面是形成具有多电平氧化速率的浮栅结构，浮栅结构的下部具有较高的氧化速率，例如具有不同掺杂浓度或结晶度的两个多晶硅层的浮栅结构较低的多晶硅层掺杂浓度较高，或较低的多晶硅层具有较高的结晶度。因此，在稍后的氧化过程中，形成用于定义字线的蚀刻工艺的浮动栅极结构的所需轮廓，即从浮动栅极结构的下部到较高部分形成增加的宽度分布。浮动栅极结构的上部的宽度大于浮动栅极结构的下部的宽度。因此，隔离字线的各向异性蚀刻处理保持理想的蚀刻结果，换句话说，消除了字线短路的蚀刻区域中的多晶硅桁条。

98. 发明授权

US06448186B1 Method and apparatus for use of hydrogen and silanes in plasma 有权
标题翻译：在等离子体中使用氢和硅烷的方法和装置
公开(公告)号：US06448186B1
公开(公告)日：2002-09-10
申请号：US09684571
申请日：2000-10-06
申请人： Darin S. Olson , Tirunelveli S. Ravi , Richard S. Swope , Jerrod Paul Krebs
发明人： Darin S. Olson , Tirunelveli S. Ravi , Richard S. Swope , Jerrod Paul Krebs
IPC分类号： H01L21469
CPC分类号： H01L21/02126 , C23C16/30 , C23C16/505 , H01L21/02211 , H01L21/02216 , H01L21/02274 , H01L21/31633
摘要： A hydrogen-containing chemical species is included in the reactant gas mixture in a plasma-enhanced CVD process for forming a carbon-containing dielectric film. The CVD reactant gas mixture contains silicon, oxygen, hydrogen and carbon atoms for forming a novel carbon-containing silicon oxide film in which both Si—C and Si—H bonds are present. Because dielectric material deposited in accordance with the invention has a significant number of Si—H bonds, which are more robust than Si—C bonds, it is more resistant to undesired etching and other physical changes during fabrication than dielectric material formed by conventional methods. A method in accordance with the invention allows a faster deposition rate. A dielectric film formed in accordance with the invention has enhanced uniformity characteristics and a dielectric constant less than 3.
摘要翻译：在用于形成含碳电介质膜的等离子体增强CVD工艺中，反应气体混合物中包含含氢化学物质。 CVD反应气体混合物含有硅，氧，氢和碳原子，用于形成其中存在Si-C和Si-H键的新型含碳氧化硅膜。由于根据本发明沉积的电介质材料具有比Si-C键更坚固的大量Si-H键，所以在制造期间比通过常规方法形成的介电材料更耐受不期望的蚀刻和其它物理变化。根据本发明的方法允许更快的沉积速率。根据本发明形成的电介质膜具有增强的均匀性特性和小于3的介电常数。

99. 发明授权

US06346489B1 Precleaning process for metal plug that minimizes damage to low-&kgr; dielectric 有权
标题翻译：金属插塞的预清洗工艺可最大限度地降低对低kappa电介质的损伤
公开(公告)号：US06346489B1
公开(公告)日：2002-02-12
申请号：US09388991
申请日：1999-09-02
申请人： Barney M. Cohen , Suraj Rengarajan , Kenny King-Tai Ngan
发明人： Barney M. Cohen , Suraj Rengarajan , Kenny King-Tai Ngan
IPC分类号： H01L21469
CPC分类号： H01L21/02063 , H01L21/3105 , H01L21/76814
摘要： The invention is a precleaning process suitable for fabricating metal plugs in a low-&kgr;, carbon-containing dielectric. More specifically, the invention is a process for cleaning a contact area of a metal conductor on a semiconductor workpiece so as to minimize damage to a low-&kgr;, carbon-containing dielectric overlying the metal. After forming contact openings in the low-&kgr; dielectric so as to expose contact areas on the underlying metal conductor, the contact areas are cleaned by exposing the workpiece to an atmosphere formed by plasma decomposition of a mixture of hydrogen-containing and helium gases. Surprisingly, our preclean process can repair damage to the dielectric caused by preceding process steps, such as oxygen plasma ashing processes for removing photoresist.
摘要翻译：本发明是适用于制造低κ，含碳电介质中的金属塞的预清洗方法。更具体地，本发明是一种用于清洁半导体工件上的金属导体的接触面积的方法，以便使对覆盖金属的低κ，含碳电介质的损伤最小化。在低k电介质中形成接触开口以暴露下面的金属导体上的接触区域之后，通过将工件暴露于由含氢和氦气的混合物的等离子体分解形成的气氛中来清洁接触区域。令人惊讶的是，我们的预清洗工艺可以修复由先前的工艺步骤引起的介电损坏，例如用于除去光致抗蚀剂的氧等离子体灰化处理。

100. 发明授权

US06337291B1 Method of forming capacitor for semiconductor memory device 失效
标题翻译：形成半导体存储器件电容器的方法
公开(公告)号：US06337291B1
公开(公告)日：2002-01-08
申请号：US09607976
申请日：2000-06-30
申请人： Dong Su Park , Tae Hyeok Lee
发明人： Dong Su Park , Tae Hyeok Lee
IPC分类号： H01L21469
CPC分类号： H01L21/3144 , H01L21/3143 , H01L21/3145 , H01L21/32105 , H01L27/10852 , H01L28/84 , H01L28/91
摘要： Disclosed herein is a method of forming a capacitor for a semiconductor memory device. The method comprises a step of:forming a lower electrode on the semiconductor substrate; forming an O3-oxide film on the lower electrode; forming Si—O—N bonds on the surface of the O3-oxide film; forming a TaON film on the Si—O—N bonds by a chemical vapor deposition of a Ta chemical vapor, an O2 gas and an NH3 gas; and forming an upper electrode on the TaON film.
摘要翻译：这里公开了一种形成用于半导体存储器件的电容器的方法。该方法包括以下步骤：在半导体衬底上形成下电极; 在下电极上形成氧化物膜; 在O3氧化物膜的表面上形成Si-O-N键; 通过Ta化学蒸气，O2气和NH3气体的化学气相沉积在Si-O-N键上形成TaON膜; 并在TaON膜上形成上电极。

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