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91. 发明申请

WO2010070626A1 HIGH POWER SEMICONDUCTOR DEVICE FOR WIRELESS APPLICATIONS AND METHOD OF FORMING A HIGH POWER SEMICONDUCTOR DEVICE 审中-公开
标题翻译：用于无线应用的高功率半导体器件和形成高功率半导体器件的方法
公开(公告)号：WO2010070626A1
公开(公告)日：2010-06-24
申请号：PCT/IB2009/056029
申请日：2009-12-10
申请人： FREESCALE SEMICONDUCTOR, INC. , BOULAY, Jean Marie , GHANNAM, Ayad
发明人： BOULAY, Jean Marie , GHANNAM, Ayad
IPC分类号： H01L23/498 , H01L23/538 , H01L23/64
CPC分类号： H01L23/5389 , H01L23/49844 , H01L23/66 , H01L24/48 , H01L24/49 , H01L2223/6644 , H01L2224/451 , H01L2224/48091 , H01L2224/49052 , H01L2224/49175 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01029 , H01L2924/01031 , H01L2924/01033 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/10253 , H01L2924/14 , H01L2924/19041 , H01L2924/19051 , H01L2924/30107 , H01L2924/3011 , H01L2924/30111 , H01L2924/3025 , H01L2924/00 , H01L2224/45099
摘要： A high power semiconductor device (400) for operation at powers greater than 5 watts for wireless applications comprises a semiconductor substrate (402) including an active area (404) of the high power semiconductor device, contact regions (408) formed on the semiconductor substrate providing contacts to the active area of the high power semiconductor device, a dielectric layer (412) formed over a part of the semiconductor substrate, a lead (500, 502) for providing an external connection to the high power semiconductor device (400) and an impedance matching network (510, 512) formed on the semiconductor substrate (402) between the active area (404) of the high power semiconductor device and the lead (500, 502). The impedance matching network includes conductor lines (414) formed on the dielectric layer. The conductor lines (414) are coupled to the contact regions for providing high power connections to the contact regions of the active area, and have a predetermined inductance for impedance matching.
摘要翻译：用于无线应用的功率大于5瓦的大功率半导体器件（400）包括：半导体衬底（402），包括大功率半导体器件的有源区（404），形成在半导体衬底上的接触区（408）提供与大功率半导体器件的有源区的接触，在半导体衬底的一部分上形成的电介质层（412），用于提供与大功率半导体器件（400）的外部连接的引线（500,502），以及形成在大功率半导体器件的有源区域（404）和引线（500,502）之间的半导体衬底（402）上的阻抗匹配网络（510,512）。阻抗匹配网络包括形成在电介质层上的导线（414）。导线（414）耦合到接触区域，以提供与有源区域的接触区域的高功率连接，并具有用于阻抗匹配的预定电感。

92. 发明申请

WO2007046268A1 半導体装置及び半導体装置の特性調整方法审中-公开
标题翻译：用于调整半导体器件特性的半导体器件和方法
公开(公告)号：WO2007046268A1
公开(公告)日：2007-04-26
申请号：PCT/JP2006/320207
申请日：2006-10-10
申请人：タマティーエルオー株式会社 , 大塚寛治 , 鷹野致和 , 水野文夫 , 横倉三郎 , 伊藤恒夫 , 丹場裕子 , 秋山豊
发明人：大塚寛治 , 鷹野致和 , 水野文夫 , 横倉三郎 , 伊藤恒夫 , 丹場裕子 , 秋山豊
IPC分类号： H01L21/822 , H01L21/04 , H03K5/125 , H03K19/00 , H03K19/0175
CPC分类号： H03K5/156 , H01L23/642 , H01L23/66 , H01L24/48 , H01L24/49 , H01L2224/48091 , H01L2224/48247 , H01L2224/49171 , H01L2224/73265 , H01L2924/00014 , H01L2924/01004 , H01L2924/19041 , H01L2924/19051 , H01L2924/30107 , H01L2924/3011 , H03K2005/00026 , H03K2217/0018 , H04L25/085 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要：高周波数の信号の送信に好適な信号伝送配線を有しており、かつこの信号伝送配線の特性を調整することができる半導体装置を提供する。本発明に係る半導体装置は、信号を伝送する信号伝送配線２０と、信号伝送配線２０にゲート電極が接続されたＭＯＳ容量素子１０と、ＭＯＳ容量素子１０のソース及びドレインそれぞれに接続され、該ソース及びドレインに電位を与える第１の電位設定配線３０と、ＭＯＳ容量素子１０のウェルに接続され、該ウェルに電位を与える第２の電位設定配線４０とを具備する。第１の電位設定配線３０及び第２の電位設定配線４０それぞれの電位を調節することにより、信号伝送配線２０で生じるジッターを調節することができる。
摘要翻译：半导体器件具有适于发送高频信号的信号传输线路，并且可以调整信号传输线路的特性。半导体器件包括用于发送信号的信号传输布线（20），连接到信号传输线（20）的栅电极的MOS电容器元件（10），连接到源极的第一电压设定布线（30）和 MOS电容器元件（10）的漏极并且向源极和漏极提供电压，以及连接到MOS电容器元件（10）的阱并向阱提供电压的第二电压设定布线（40）。通过调整第一电压设定布线（30）和第二电压设定布线（40）上的每个电压，可以调整发生在信号传输布线（20）上的抖动。

93. 发明申请

WO2004093186A1 金属ベース回路基板とその製造方法审中-公开
标题翻译：金属基板电路板及其制造方法
公开(公告)号：WO2004093186A1
公开(公告)日：2004-10-28
申请号：PCT/JP2004/005365
申请日：2004-04-15
申请人：電気化学工業株式会社 , 米村直己 , 八島克憲 , 辻村好彦 , 石倉秀則 , 齊木高志
发明人：米村直己 , 八島克憲 , 辻村好彦 , 石倉秀則 , 齊木高志
IPC分类号： H01L23/12
CPC分类号： H01L23/66 , H01L21/4857 , H01L23/142 , H01L23/3735 , H01L23/3736 , H01L23/49822 , H01L24/45 , H01L24/48 , H01L24/49 , H01L25/16 , H01L2224/05611 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/0566 , H01L2224/05666 , H01L2224/45111 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/45155 , H01L2224/4516 , H01L2224/45166 , H01L2224/48091 , H01L2224/48227 , H01L2224/48237 , H01L2224/48472 , H01L2224/48611 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48647 , H01L2224/48655 , H01L2224/48666 , H01L2224/48711 , H01L2224/48724 , H01L2224/48739 , H01L2224/48747 , H01L2224/48755 , H01L2224/48766 , H01L2224/48839 , H01L2224/48844 , H01L2224/48847 , H01L2224/48855 , H01L2224/4886 , H01L2224/48866 , H01L2224/4911 , H01L2224/85411 , H01L2224/85424 , H01L2224/85439 , H01L2224/85455 , H01L2224/8546 , H01L2224/85466 , H01L2924/00011 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01039 , H01L2924/01045 , H01L2924/01047 , H01L2924/0105 , H01L2924/01056 , H01L2924/01061 , H01L2924/01063 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/07802 , H01L2924/13091 , H01L2924/14 , H01L2924/19043 , H01L2924/19051 , H01L2924/30105 , H05K1/0224 , H05K1/024 , H05K1/025 , H05K3/0061 , H05K2201/0187 , H05K2201/0209 , H05K2201/09745 , H01L2924/00014 , H01L2924/00 , H01L2224/48811 , H01L2224/48824 , H01L2224/48744 , H01L2224/4876 , H01L2224/4866
摘要：混成集積回路の高周波動作時に発生する半導体の誤動作時を大幅に低減し、熱放散性に優れた金属ベース回路基板を提供する。　金属板上に絶縁層（Ａ、Ｂ）を介して設けられた回路と、前記回路上に実装される出力用半導体と、前記出力用半導体を制御し、前記回路上に設けられる制御用半導体とからなる混成集積回路に用いられる金属ベース回路基板であって、前記制御用半導体を搭載する回路部分（パッド部分）の下部に低静電容量部分を埋設していることを特徴とする金属ベース回路基板であり、好ましくは、低静電容量部分が、無機質充填材を含有してなる樹脂からなり、しかも誘電率が２～９であることを特徴とする前記の金属ベース回路基板。
摘要翻译：金属基电路板能够显着降低在混合集成电路的高频工作中发生的半导体器件的故障，并且具有优异的散热能力。用于混合集成电路的金属基底电路板包括：设置在绝缘层（A，B）之间的金属片上的电路，安装在电路上的输出半导体器件和用于控制输出半导体器件的控制半导体器件并安装在电路上。金属基电路板的特征在于，在安装有控制半导体器件的电路部分（焊盘部分）的下方埋设有小电容部分，优选地，小电容部分由含有无机填料的树脂并且具有2至9的介电常数。

94. 发明申请

WO2017186627A1 SEMICONDUCTOR PACKAGE 审中-公开
标题翻译：半导体封装
公开(公告)号：WO2017186627A1
公开(公告)日：2017-11-02
申请号：PCT/EP2017/059627
申请日：2017-04-24
申请人： TECHNISCHE HOCHSCHULE INGOLSTADT
发明人： ELGER, Gordon , PFORR, Johannes
IPC分类号： H01L25/07
CPC分类号： H01L23/3675 , H01L21/50 , H01L23/10 , H01L23/147 , H01L23/315 , H01L23/3735 , H01L23/5385 , H01L23/5389 , H01L24/32 , H01L25/071 , H01L2224/32157 , H01L2224/8384 , H01L2924/1203 , H01L2924/1301 , H01L2924/13033 , H01L2924/13055 , H01L2924/13091 , H01L2924/14252 , H01L2924/19051 , H01L2924/19105 , H02P27/08
摘要： FDST Patentanwälte, Nürnberg Seite A semiconductor package (1, 1', 1''), the package (1, 1', 1'') comprising a first substrate (2) comprising at a front cavity side (5') a plurality of cavities (6, 6'), each of the cavities (6, 6') having a bottom wall (7) and side walls (8), and having a conductive path (10) forming an electric contact surface (9) located at the inner side of the bottom wall (7) of the cavity (6, 6'), a plurality of semiconductor elements (16, 7), each of the semiconductor elements (16, 17) comprising a first electric contact surface (9) on a first side (26) and a second electric contact surface (9) on a second side (28) opposite to the first side (26), wherein at least one of the semiconductor elements (16, 17) is placed within a corresponding cavity (6, 6') at the front cavity side (5') of the first substrate (2), wherein the first electric contact (27) of the semiconductor element (16, 17) and the electric contact surface (9) at the inner side of the bottom wall (7) of the corresponding cavity (6, 6') are electrically conductive bonded in a material-locking manner, and a second substrate (3), the seond substrate (3) being attached with a connection side (12, 13) to the front cavity side (5') of the first substrate (2) thereby encapsulating the semiconductor elements (16, 17) located within the corresponding cavities (6, 6') at the front cavity side (5') of the first substrate (2).
摘要翻译：一种半导体封装（1,1'，1“），该封装（1,1'，1”）包括第一基板（2）和第二基板包括在前腔侧（5'）处的多个空腔（6,6'），每个空腔（6,6'）具有底壁（7）和侧壁（8），并且具有导电路径（10）形成位于空腔（6,6'）的底壁（7）的内侧的电接触表面（9），多个半导体元件（16,7），每个半导体元件包括在第一侧（26）上的第一电接触表面（9）和在与第一侧（26）相对的第二侧（28）上的第二电接触表面（9），其中至少一个所述半导体元件（16,17）被放置在所述第一基板（2）的所述前腔侧（5'）处的相应空腔（6,6'）内，其中所述半导体元件（16,17）的所述第一电触点（27）内部si处的电接触表面（9）（6,6'）的底壁（7）的第一基板（3）以材料锁定的方式导电结合;以及第二基板（3），所述第二基板（3）以连接侧（2'）的前腔侧（5'），从而将位于相应腔（6,6'）内的半导体元件（16,17）封装在前腔侧（5'）处，的第一衬底（2）。

95. 发明申请

WO2009099912A3 DIFFERENTIAL INTERNALLY MATCHED WIRE-BOND INTERFACE 审中-公开
标题翻译：差异内部匹配的线接口
公开(公告)号：WO2009099912A3
公开(公告)日：2013-03-28
申请号：PCT/US2009032531
申请日：2009-01-30
申请人： VIASAT INC , MENON GAURAV
发明人： MENON GAURAV
IPC分类号： H01L23/49 , H01L23/66
CPC分类号： H03H7/38 , H01L23/3121 , H01L23/66 , H01L24/45 , H01L24/48 , H01L24/49 , H01L2223/6611 , H01L2223/6627 , H01L2223/6638 , H01L2224/45015 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/49111 , H01L2224/49171 , H01L2924/01006 , H01L2924/01014 , H01L2924/01015 , H01L2924/01029 , H01L2924/01031 , H01L2924/01033 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/14 , H01L2924/1423 , H01L2924/19032 , H01L2924/19051 , H01L2924/20752 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H01L2924/30111 , H01L2924/00014 , H01L2924/00
摘要： In wireless communication devices, internally matching impedance in millimeter wave packaging enables better signal retention at high frequencies in the range of 15 GHz and above. Through the use of differential wire bond signal transmission, the inherent inductance of a millimeter wave package can be matched by the capacitance of the package wire bonds if the capacitance is tailored. The capacitance can be tailored by calculating a suitable distance between wire bonds and tuning the dielectric constant of the over-mold material. A differential set of wire bonds act like a differential transmission line whose characteristic impedance can be tuned by configuring the dielectric constant of the over- mold of the millimeter wave package.
摘要翻译：在无线通信设备中，毫米波封装中的内部匹配阻抗可在15 GHz及以上的高频下实现更好的信号保持。通过使用差分接线信号传输，如果电容被定制，则毫米波封装的固有电感可以通过封装引线接合的电容来匹配。可以通过计算引线键合之间的合适距离并调整外模材料的介电常数来调整电容。差分组合引线的作用就像差分传输线，其特性阻抗可以通过配置毫米波封装的覆盖模的介电常数进行调节。

96. 发明申请

WO2011100207A3 INTERCONNECT PATTERN FOR TRANSCEIVER PACKAGE 审中-公开
标题翻译：收发器包装的互连模式
公开(公告)号：WO2011100207A3
公开(公告)日：2011-11-17
申请号：PCT/US2011023964
申请日：2011-02-08
申请人： ALTERA CORP , JIANG XIAOHONG , SHI HONG
发明人： JIANG XIAOHONG , SHI HONG
IPC分类号： H01L23/48 , H01L21/60 , H01L23/535
CPC分类号： H01L23/66 , H01L23/50 , H01L23/5286 , H01L2223/6638 , H01L2924/0002 , H01L2924/19051 , H01L2924/3011 , H01L2924/00
摘要： In one embodiment, signaling and ground contacts are located in at least two parallel, rectilinear rows along at least one edge of an interconnect package such as a BGA package. In one row, each of a plurality of ground contacts is located between two pairs of contacts for receiving differential signals. In the second row, each of a plurality of ground contacts is located between two pairs of contacts for transmitting differential signals and the ground contacts in the second row are offset by one column from the ground contacts in the first row. As a result, the ratio of signaling pairs to ground contacts is 2:2. Additional pairs of rows may also be used. In other embodiments, signaling and ground contacts are located in three parallel, rectilinear rows along at least one edge of the package. In the first row, ground contacts alternate with contacts for receiving differential signals and in the second row ground contacts alternate with contacts for transmitting differential signals. The third row of contacts is located between the first and second rows and contains contacts for receiving differential signals that alternate with contacts for transmitting differential signals. The ground contacts in the second row are offset by one column from the ground contacts in the first row. In a second embodiment, the receiving contacts in the third row are in the same column as the receiving contacts in the first row; and the transmitting contacts in the third row are in the same column as the transmitting contacts in the second row. In a third embodiment, the contacts in the third row are offset by one column from the corresponding contacts in the first or second rows. Each pair of contacts for receiving differential signals is formed by a contact in the first row and an adjacent contact in the third row; and each pair of contacts for transmitting differential signals is formed by a contact in the second row and an adjacent contact in the third row.
摘要翻译：在一个实施例中，信令和接地触点位于沿着诸如BGA封装的互连封装的至少一个边缘的至少两个平行直线排中。在一行中，多个接地触点中的每一个位于用于接收差分信号的两对触点之间。在第二行中，多个接地触点中的每一个位于用于传输差分信号的两对触点之间，并且第二行中的接地触点与第一行中的接地触点偏移一列。结果，信令对与接地触点的比例为2：2。还可以使用另外的行对。在其他实施例中，信号和接地触点沿着包装的至少一个边缘位于三个平行的直线行中。在第一行中，接地触点与用于接收差分信号的触点交替，而在第二行中，接地触点与用于传输差分信号的触点交替。第三行触点位于第一行和第二行之间，并且包含用于接收与用于传输差分信号的触点交替的差分信号的触点。第二行的接地触点与第一行的接地触点偏移一列。在第二实施例中，第三行中的接收触点与第一行中的接收触点在同一列中; 并且第三行中的发送触点与第二行中的发送触点在同一列中。在第三实施例中，第三行中的触点从第一行或第二行中的对应触点偏移一列。用于接收差分信号的每对触点由第一行中的触点和第三行中的相邻触点形成; 并且用于传输差分信号的每对触点由第二行中的触点和第三行中的相邻触点形成。

97. 发明申请

WO2007069224A3 ENHANCED SUBSTRATE USING METAMATERIALS 审中-公开
标题翻译：使用金属材料的增强基材
公开(公告)号：WO2007069224A3
公开(公告)日：2007-11-15
申请号：PCT/IB2006054899
申请日：2006-12-15
申请人： NXP BV , WYLAND CHRIS
发明人： WYLAND CHRIS
IPC分类号： H01L23/66 , H01P3/08 , H01Q15/00 , H05K1/02
CPC分类号： H01Q15/0086 , H01L23/64 , H01L2924/0002 , H01L2924/19051 , H01L2924/3011 , H05K1/0236 , H01L2924/00
摘要： In enhancing signal quality through packages, meta-materials may be used. Meta-materials are designed to make the signal act in such a way as to make the shape of the signal behave as though the permittivity and permeability are different than the real permittivity and permeability of the insulator used. In an example embodiment, a substrate (10) is configured as a meta-material. The meta-material provides noise protection for a signal line (15) having a pre-determined length disposed on the meta-material. The substrate comprises a dielectric material (2, 4, 6) having a topside surface and an underside surface. A conductive material (30) is arranged into pre-determined shapes (35) having a collective length. Dielectric material envelops the conductive material and the conductive material is disposed at a first predetermined distance (55) from the topside surface and at a second predetermined distance from the underside surface. The collective length of the conductive material (30) is comparable to the pre-determined length of the signal line (15).
摘要翻译：通过包装提高信号质量，可以使用超材料。元材料被设计成使信号的作用方式使得信号的形状表现得如同介电常数和磁导率不同于使用的绝缘体的实际介电常数和磁导率。在示例性实施例中，衬底（10）被配置为超常材料。超临界材料为具有设置在超常材料上的预定长度的信号线（15）提供噪声保护。衬底包括具有顶侧表面和下表面的电介质材料（2,4,6）。导电材料（30）被布置成具有共同长度的预定形状（35）。电介质材料包围导电材料，并且导电材料设置在与顶侧表面相距第一预定距离（55）处并且距离下表面第二预定距离。导电材料（30）的总长度与信号线（15）的预定长度相当。

98. 发明申请

WO2006097893A2 METHOD AND SYSTEM FOR OUTPUT MATCHING OF RF TRANSISTORS 审中-公开
标题翻译：射频晶体管输出匹配的方法与系统
公开(公告)号：WO2006097893A2
公开(公告)日：2006-09-21
申请号：PCT/IB2006/050791
申请日：2006-03-14
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , BLEDNOV, Igor
发明人： BLEDNOV, Igor
CPC分类号： H01L23/66 , H01L24/48 , H01L24/49 , H01L2223/6611 , H01L2223/6644 , H01L2224/45015 , H01L2224/48011 , H01L2224/48091 , H01L2224/4813 , H01L2224/48137 , H01L2224/48247 , H01L2224/49111 , H01L2224/49175 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01031 , H01L2924/01032 , H01L2924/01033 , H01L2924/01049 , H01L2924/01055 , H01L2924/01061 , H01L2924/01074 , H01L2924/01082 , H01L2924/10329 , H01L2924/1305 , H01L2924/1306 , H01L2924/13062 , H01L2924/13091 , H01L2924/19041 , H01L2924/19043 , H01L2924/19051 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , Y10T29/49018 , H01L2924/00 , H01L2224/45099 , H01L2924/207 , H01L2924/20753
摘要： A high frequency power device (100) is described comprising a high frequency power transistor (102) having a first main electrode, a second main electrode acting as output electrode and a control electrode, and an output compensation circuit (104) for compensating parasitic output capacitance of the transistor (102). The output compensation circuit is physically positioned relative to the transistor such that a shorter bond wire between the output electrode of the transistor and an output lead of the high frequency power device is obtained. The output compensation circuit (104) therefore is physically located in between an input lead (108) of the high frequency power device (100) and the transistor (102). The inductance introduced by the bond wire Lcomp from the output compensation circuit (104) to the output electrode of the transistor (102) can be used as a feedback signal. Selection of the mutual inductive coupling between the bond wire LcOmP and a bond wire connected to the pre-matching circuit (106) allows to further optimize the properties of the high frequency power device.
摘要翻译：一种高频功率器件（100）被描述为包括具有第一主电极，作为输出电极的第二主电极和控制电极的高频功率晶体管（102）和用于补偿寄生输出的输出补偿电路（104）晶体管（102）的电容。输出补偿电路相对于晶体管物理定位，使得在晶体管的输出电极和高频功率器件的输出引线之间获得较短的接合线。因此，输出补偿电路（104）物理地位于高频功率器件（100）的输入引线（108）和晶体管（102）之间。由接合线Lcomp从输出补偿电路（104）引入到晶体管（102）的输出电极的电感可以用作反馈信号。选择接合线LcOmP和连接到预匹配电路（106）的接合线之间的互感耦合允许进一步优化高频功率器件的特性。

99. 发明申请

WO1992017905A1 METHOD FOR PRODUCING COAXIAL CONNECTIONS FOR ELECTRONIC COMPONENTS, AND COMPONENT CASING CONTAINING SUCH CONNECTIONS 审中-公开
标题翻译：用于生产电子部件的同轴连接的方法以及包含这种连接的组件盒
公开(公告)号：WO1992017905A1
公开(公告)日：1992-10-15
申请号：PCT/FR1992000241
申请日：1992-03-17
申请人： THOMSON-CSF , VAL, Christian
发明人： THOMSON-CSF
IPC分类号： H01L23/498
CPC分类号： H01L23/66 , H01L21/486 , H01L23/49822 , H01L23/49827 , H01L24/28 , H01L24/29 , H01L24/45 , H01L24/48 , H01L2223/6611 , H01L2223/6622 , H01L2224/45014 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48095 , H01L2224/48227 , H01L2224/48472 , H01L2224/48599 , H01L2224/48699 , H01L2224/8592 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01024 , H01L2924/01028 , H01L2924/01029 , H01L2924/01058 , H01L2924/01079 , H01L2924/014 , H01L2924/15153 , H01L2924/1517 , H01L2924/157 , H01L2924/15787 , H01L2924/1579 , H01L2924/16152 , H01L2924/167 , H01L2924/1679 , H01L2924/19051 , H01L2924/20752 , H01L2924/3011 , H05K1/0243 , H05K3/3421 , H05K2201/09809 , H05K2201/10689 , Y10T29/49123 , Y10T29/49144 , H01L2924/00012 , H01L2924/00 , H01L2224/05599
摘要： A method for producing coaxial connections for the input/output links of the component and/or the casing in which it is encapsulated. Specifically, the component is placed in a casing (B) and connected thereto in a conventional manner via wires, whereafter the wires are covered with a first insulating layer (21) followed by a second, conductive layer (24), so that said second layer is connected to the casing's earth contacts (PE1). The layers (21, 24) thereby form collectively produced coaxial structures with the connecting wires (F). A similar process is used for the casing's own input/output connections (P).
摘要翻译： PCT No.PCT / FR92 / 00241 Sec。 371日期：1992年11月10日 102（e）日期1992年11月10日PCT 1991年3月17日PCT公布。出版物WO92 / 17905 日期为1992年10月15日。本发明的一个目的是生产用于封装该部件和/或壳体的输入/输出链路的同轴连接。更准确地说，放置在包装（B）中的部件通常通过电线连接到其包装; 导线接下来被第一绝缘层（21）覆盖，然后由第二导电层（24）覆盖，使得该第二层连接到封装的接地焊盘（PE1）。因此，层（21,24）与连接线（F）形成共同生产的同轴结构。类似的过程用于包装本身的输入/输出连接（P）。

100. 发明授权

KR101101490B1 차폐 기능을 갖는 무선 장치 失效
标题翻译：具有屏蔽功能的无线设备
公开(公告)号：KR101101490B1
公开(公告)日：2012-01-03
申请号：KR1020090114097
申请日：2009-11-24
申请人： 삼성전기주식회사
发明人： 김기중 , 박태준 , 송영진 , 원준구 , 김윤석
IPC分类号： H05K9/00 , H01L23/50 , H04B1/38
CPC分类号： H03F3/211 , H01L23/552 , H01L23/645 , H01L23/66 , H01L24/48 , H01L2223/6677 , H01L2224/05554 , H01L2224/48137 , H01L2924/00014 , H01L2924/19051 , H01L2924/3011 , H01L2924/3025 , H03F3/195 , H03F2200/537 , H03F2200/541 , H01L2924/00 , H01L2224/45099
摘要： 본 발명은 전력 증폭기로부터의 구동 전원과 결합기의 도전 선로 간에 신호 간섭을 차폐하는 차폐 기능을 갖는 무선 장치에 관한 것으로, 사전에 설정된 구동 전원을 입력받아 무선 입력 신호를 사전에 설정된 이득으로 증폭하는 증폭부와, 적어도 하나의 코일을 갖고, 상기 증폭부로부터 상기 구동 전원을 공급받아 상기 증폭부로부터의 증폭된 신호의 경로를 상기 코일을 통해 임피던스 매칭하는 임피던스 매칭부와, 상기 증폭부로부터의 구동 전원의 전달 경로와 상기 코일간의 신호 간섭을 제거하는 차폐부를 포함하는 것을 특징으로 하는 차폐 기능을 갖는 무선 장치를 제공한다.
전력 증폭기(Power Amplifier), 신호 간섭(Signal Interference), 하모닉스(Harmonics)

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