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91. 发明授权

US07859881B2 Magnetic memory device and write/read method of the same 有权
标题翻译：磁存储器件和写/读方法相同
公开(公告)号：US07859881B2
公开(公告)日：2010-12-28
申请号：US11672261
申请日：2007-02-07
申请人： Yoshihisa Iwata , Katsuyuki Fujita , Yuui Shimizu
发明人： Yoshihisa Iwata , Katsuyuki Fujita , Yuui Shimizu
IPC分类号： G11C19/00
CPC分类号： G11C19/0841 , G11C5/02 , G11C11/14 , G11C21/00 , Y10S977/933
摘要： A magnetic memory device includes a first magnetic line which has a plurality of cells made of magnetic domains partitioned by domain walls, and in which information is recorded in each cell, a first write element formed at one end portion of the first magnetic line, and a first read element formed at the other end portion of the first magnetic line.
摘要翻译：一种磁存储器件包括：第一磁线，其具有由畴壁分隔的磁畴构成的多个单元，并且其中信息被记录在每个单元中，形成在第一磁线的一个端部处的第一写入元件，以及形成在第一磁性线的另一端部的第一读取元件。

92. 发明申请

US20100124116A1 NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE 有权
标题翻译：非挥发性半导体存储器件
公开(公告)号：US20100124116A1
公开(公告)日：2010-05-20
申请号：US12564576
申请日：2009-09-22
申请人： Takashi Maeda , Yoshihisa Iwata
发明人： Takashi Maeda , Yoshihisa Iwata
IPC分类号： G11C16/04
CPC分类号： G11C16/0483 , G11C5/02 , G11C7/18 , G11C16/10 , G11C16/14 , H01L27/11565 , H01L27/11578 , H01L27/11582
摘要： Memory strings includes: a first semiconductor layer including a columnar portion extending in a direction perpendicular to a substrate; a first electric charge storage layer formed to surround a side surface of the columnar portion; and a first conductive layer formed to surround the first electric charge storage layer. First selection transistors includes: a second semiconductor layer extending upward from a top surface of the columnar portion; a second electric charge storage layer formed to surround a side surface of the second semiconductor layer; and a second conductive layer formed to surround the second electric charge storage layer. The non-volatile semiconductor storage device further includes a control circuit that causes, prior to reading data from a selected one of the memory strings, electric charges to be accumulated in the second electric charge storage layer of one of the first selection transistors connected to an unselected one of the memory strings.
摘要翻译：存储器串包括：第一半导体层，包括沿垂直于衬底的方向延伸的柱状部分; 形成为围绕所述柱状部的侧面的第一电荷存储层; 以及形成为围绕所述第一电荷存储层的第一导电层。第一选择晶体管包括：从柱状部分的顶表面向上延伸的第二半导体层; 形成为包围第二半导体层的侧面的第二电荷存储层; 以及形成为围绕所述第二电荷存储层的第二导电层。非易失性半导体存储装置还包括控制电路，其在从所选择的一个存储器串中读取数据之前，将电荷累积在连接到第一选择晶体管的第一选择晶体管的第二电荷存储层中取消选择一个内存字符串。

93. 发明授权

US07209382B2 Magnetic random access memory 失效
标题翻译：磁性随机存取存储器
公开(公告)号：US07209382B2
公开(公告)日：2007-04-24
申请号：US11305203
申请日：2005-12-19
申请人： Yoshihisa Iwata , Kentaro Nakajima
发明人： Yoshihisa Iwata , Kentaro Nakajima
IPC分类号： G11C11/14 , G11C11/15 , G11C7/22 , G11C7/12 , G11C8/18 , G11C8/08
CPC分类号： G11C11/16
摘要： In a magnetic random access memory (MRAM), setting data which determines the supply/cutoff timing, magnitude, and temporal change (current waveform) of a write word/bit line current is registered in a setting circuit. A write current waveform control circuit generates a write word line drive signal, write word line sink signal, write bit line drive signal, and write bit line sink signal on the basis of the setting data. The current waveform of the write word/bit line current is controlled for each chip or memory cell array.
摘要翻译：在磁性随机存取存储器（MRAM）中，将设定数据确定为写入字/位线电流的供给/截止时间，幅度和时间变化（电流波形）。写入电流波形控制电路根据设定数据生成写字线驱动信号，写字线吸收信号，写位线驱动信号和写位线吸收信号。对每个芯片或存储单元阵列控制写入字/位线电流的当前波形。

94. 发明授权

US07203088B2 Magnetoresistive random access memory and driving method thereof 有权
标题翻译：磁阻随机存取存储器及其驱动方法
公开(公告)号：US07203088B2
公开(公告)日：2007-04-10
申请号：US11067670
申请日：2005-03-01
申请人： Sumio Ikegawa , Yoshihisa Iwata , Kenji Tsuchida
发明人： Sumio Ikegawa , Yoshihisa Iwata , Kenji Tsuchida
IPC分类号： G11C11/00
CPC分类号： G11C11/16
摘要： The number of read errors can be reduced, and a large read signal can be produced. A method of driving a magnetoresistive random access memory including memory cells, a state of which is switched between binary resistance values using a single kind of write pulses is proposed, the method comprising: selecting a memory cell; reading a resistance value, which is one of the binary resistance values, of the selected memory cell, the resistance value read being defined as a first resistance value; performing a first write operation on the selected memory cell using the write pulse to change the resistance value of the selected memory cell to the other of the binary resistance values; reading the other of the binary resistance values, which is defined as a second resistance value; comparing the second resistance value with the first resistance value, and determining data originally stored in the selected memory cell based on the comparison result; and performing a second write operation on the selected memory cell using the write pulse to change the second resistance value of the selected memory cell to the first resistance value.
摘要翻译：可以减少读取错误的数量，并且可以产生大的读取信号。提出一种驱动包含存储单元的磁阻随机存取存储器的方法，该存储单元的状态是使用单种写入脉冲在二进制电阻值之间切换的，该方法包括：选择存储单元; 读取所选存储单元的二进制电阻值之一的电阻值，读取的电阻值被定义为第一电阻值; 使用所述写入脉冲对所选择的存储单元执行第一写入操作，以将所选择的存储单元的电阻值改变为所述二进制电阻值中的另一个; 读取被定义为第二电阻值的二进制电阻值中的另一个; 将所述第二电阻值与所述第一电阻值进行比较，并且基于所述比较结果确定原始存储在所选存储单元中的数据; 以及使用所述写入脉冲对所选择的存储单元执行第二写入操作，以将所选存储单元的第二电阻值改变为所述第一电阻值。

95. 发明授权

US07167389B2 Magnetic random access memory with a reference cell array and dummy cell arrays 失效
标题翻译：具有参考单元阵列和虚拟单元阵列的磁性随机存取存储器
公开(公告)号：US07167389B2
公开(公告)日：2007-01-23
申请号：US10805315
申请日：2004-03-22
申请人： Yoshihisa Iwata
发明人： Yoshihisa Iwata
IPC分类号： G11C11/14 , G11C11/15 , G11C7/14 , G11C5/02 , G11C5/06
CPC分类号： G11C11/16 , G11C11/14
摘要： Memory cell arrays include a data cell array, a reference cell array and a dummy cell array. First read word lines are connected respectively to the gates of the read selection switches of the data cells. Second read word lines are connected respectively to the gates of the read selection switches of the reference cells. The gates of the read selection switches of the dummy cells are also connected respectively to the first and second read word lines but the dummy cells do not function as memory cells because the read selection switch and the MTJ element are cut apart in each of the dummy cells.
摘要翻译：存储单元阵列包括数据单元阵列，参考单元阵列和虚拟单元阵列。第一读取字线分别连接到数据单元的读取选择开关的栅极。第二读取字线分别连接到参考单元的读取选择开关的栅极。虚拟单元的读取选择开关的栅极也分别连接到第一和第二读取字线，但是由于读取选择开关和MTJ元件在每个虚拟元件中被分开，所以虚设单元不用作存储单元细胞。

96. 发明申请

US20070013015A1 Magnetoresistive effect element and magnetic memory 有权
标题翻译：磁阻效应元件和磁存储器
公开(公告)号：US20070013015A1
公开(公告)日：2007-01-18
申请号：US11378358
申请日：2006-03-20
申请人： Tadashi Kai , Masahiko Nakayama , Sumio Ikegawa , Yoshiaki Fukuzumi , Yoshihisa Iwata
发明人： Tadashi Kai , Masahiko Nakayama , Sumio Ikegawa , Yoshiaki Fukuzumi , Yoshihisa Iwata
IPC分类号： H01L43/00
CPC分类号： H01L43/08 , G11C11/16 , H01L27/222
摘要： A magnetoresistive effect element includes a nonmagnetic layer having mutually facing first and second surfaces. A reference layer is provided on the first surface and has a fixed magnetization direction. A magnetization variable layer is provided on the second surface, has variable magnetization direction, and has a planer shape including a rectangular part, a first projected part, and a second projected part. The rectangular part has mutually facing first and second longer sides and mutually facing first and second shorter sides. The first projected part projects from the first longer side at a position shifted from the center toward the first shorter side. The second projected part projects from the second longer side at a position shifted from the center toward the second shorter side.
摘要翻译：磁阻效应元件包括具有相互面对的第一和第二表面的非磁性层。参考层设置在第一表面上并具有固定的磁化方向。磁化变化层设置在第二表面上，具有可变的磁化方向，并且具有包括矩形部分，第一突出部分和第二突出部分的平面形状。矩形部分具有相互面对的第一和第二长边以及相互面对的第一和第二短边。第一突出部从第一长边突出的位置从中心向第一短边移动。第二突出部从第二长边突出的位置从中心向第二短边移动。

97. 发明授权

US07158406B2 Data write method of magnetic random access memory 失效
标题翻译：磁随机存取存储器的数据写入方法
公开(公告)号：US07158406B2
公开(公告)日：2007-01-02
申请号：US11052810
申请日：2005-02-09
申请人： Yoshihisa Iwata
发明人： Yoshihisa Iwata
IPC分类号： G11C11/00
CPC分类号： G11C11/15
摘要： A data write method of a magnetic random access memory including a magnetoresistive element which has axis of easy and hard magnetizations, a first write wiring which runs in a direction of the axis of easy magnetization, and a second write wiring which runs in a direction of the axis of hard magnetization, includes a first phase of supplying a first current to the first write wiring in a first direction and supplying a second current to the second write wiring in a second direction, a second phase of stopping supplying the first current to the first write wiring and supplying the second current to the second write wiring in the second direction, and a third phase of supplying the first current to the first write wiring in a third direction reverse to the first direction and supplying the second current to the second write wiring in the second direction.
摘要翻译：一种磁性随机存取存储器的数据写入方法，包括具有容易且硬磁化的轴的磁阻元件，沿着容易磁化的轴线方向延伸的第一写入布线和沿着易磁化的方向延伸的第二写入布线所述硬磁化轴包括在第一方向上向所述第一写入配线提供第一电流的第一相位，并且在第二方向上向所述第二写入配线提供第二电流;停止向所述第二写入电流供给所述第一电流的第二相位，第一写入布线并且在第二方向上将第二电流提供给第二写入布线;以及第三阶段，在与第一方向相反的第三方向上将第一电流提供给第一写入布线，并将第二电流提供给第二写入在第二个方向接线。

98. 发明申请

US20060279982A1 Magnetic random access memory 失效
标题翻译：磁性随机存取存储器
公开(公告)号：US20060279982A1
公开(公告)日：2006-12-14
申请号：US11217296
申请日：2005-09-02
申请人： Yuui Shimizu , Yoshihisa Iwata
发明人： Yuui Shimizu , Yoshihisa Iwata
IPC分类号： G11C11/00
CPC分类号： G11C11/16 , G11C5/025 , G11C5/063
摘要： A magnetic random access memory includes memory cells which store information using an internal magnetization direction. A first write line includes a first extending portion, a second extending portion and a first connection portion. The first extends portion extends along a first direction and has a first end and a second end. The second extending portion extends along the first direction and has a third end facing the first end and a fourth end facing the second end. The first connection portion connects the first end and the third end. A second write line and the first write line sandwiches one of the memory cells. First peripheral circuits are connected to the first connection portion and to at least one of the second end and the fourth end.
摘要翻译：磁性随机存取存储器包括使用内部磁化方向存储信息的存储单元。第一写入线包括第一延伸部分，第二延伸部分和第一连接部分。第一延伸部分沿着第一方向延伸并且具有第一端部和第二端部。第二延伸部分沿着第一方向延伸并且具有面向第一端的第三端和面向第二端的第四端。第一连接部分连接第一端和第三端。第二个写入行和第一个写入行夹在其中一个存储单元中。第一外围电路连接到第一连接部分和第二端部和第四端部中的至少一个。

99. 发明申请

US20060114729A1 Non-volatile semiconductor memory device and memory system using the same 失效
公开(公告)号：US20060114729A1
公开(公告)日：2006-06-01
申请号：US11243985
申请日：2005-10-06
申请人： Tomoharu Tanaka , Masaki Momodomi , Hideo Kato , Hiroto Nakai , Yoshiyuki Tanaka , Riichiro Shirota , Seiichi Aritome , Yasuo Itoh , Yoshihisa Iwata , Hiroshi Nakamura , Hideko Odaira , Yutaka Okamoto , Masamichi Asano , Kaoru Tokushige
发明人： Tomoharu Tanaka , Masaki Momodomi , Hideo Kato , Hiroto Nakai , Yoshiyuki Tanaka , Riichiro Shirota , Seiichi Aritome , Yasuo Itoh , Yoshihisa Iwata , Hiroshi Nakamura , Hideko Odaira , Yutaka Okamoto , Masamichi Asano , Kaoru Tokushige
IPC分类号： G11C7/10 , G11C11/34
CPC分类号： G11C29/785 , G06F11/1008 , G06F11/1068 , G06F2201/81 , G06F2212/2022 , G11C16/10 , G11C16/12 , G11C16/24 , G11C16/3436 , G11C16/344 , G11C16/3445 , G11C16/3454 , G11C16/3459 , G11C29/34 , G11C29/52
摘要： The time required for the program verify and erase verify operations can be shortened. The change of threshold values of memory cells can be suppressed even if the write and erase operations are executed repetitively. After the program and erase operations, whether the operations were properly executed can be judged simultaneously for all bit lines basing upon a change, after the pre-charge, of the potential at each bit line, without changing the column address. In the data rewrite operation, the rewrite operation is not effected for a memory cell with the data once properly written, by changing the data in the data register.

100. 发明授权

US07050325B2 Magnetic random access memory 失效
标题翻译：磁性随机存取存储器
公开(公告)号：US07050325B2
公开(公告)日：2006-05-23
申请号：US10438015
申请日：2003-05-15
申请人： Yoshihisa Iwata , Kentaro Nakajima
发明人： Yoshihisa Iwata , Kentaro Nakajima
IPC分类号： G11C11/14 , G11C11/15 , G11C7/00
CPC分类号： G11C11/16
摘要： In a magnetic random access memory (MRAM), setting data which determines the supply/cutoff timing, magnitude, and temporal change (current waveform) of a write word/bit line current is registered in a setting circuit. A write current waveform control circuit generates a write word line drive signal, write word line sink signal, write bit line drive signal, and write bit line sink signal on the basis of the setting data. The current waveform of the write word/bit line current is controlled for each chip or memory cell array.
摘要翻译：在磁性随机存取存储器（MRAM）中，将设定数据确定为写入字/位线电流的供给/截止时间，幅度和时间变化（电流波形）。写入电流波形控制电路根据设定数据生成写字线驱动信号，写字线吸收信号，写位线驱动信号和写位线吸收信号。对每个芯片或存储单元阵列控制写入字/位线电流的当前波形。

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