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1. 发明授权

US07209382B2 Magnetic random access memory 失效
标题翻译：磁性随机存取存储器
公开(公告)号：US07209382B2
公开(公告)日：2007-04-24
申请号：US11305203
申请日：2005-12-19
申请人： Yoshihisa Iwata , Kentaro Nakajima
发明人： Yoshihisa Iwata , Kentaro Nakajima
IPC分类号： G11C11/14 , G11C11/15 , G11C7/22 , G11C7/12 , G11C8/18 , G11C8/08
CPC分类号： G11C11/16
摘要： In a magnetic random access memory (MRAM), setting data which determines the supply/cutoff timing, magnitude, and temporal change (current waveform) of a write word/bit line current is registered in a setting circuit. A write current waveform control circuit generates a write word line drive signal, write word line sink signal, write bit line drive signal, and write bit line sink signal on the basis of the setting data. The current waveform of the write word/bit line current is controlled for each chip or memory cell array.
摘要翻译：在磁性随机存取存储器（MRAM）中，将设定数据确定为写入字/位线电流的供给/截止时间，幅度和时间变化（电流波形）。写入电流波形控制电路根据设定数据生成写字线驱动信号，写字线吸收信号，写位线驱动信号和写位线吸收信号。对每个芯片或存储单元阵列控制写入字/位线电流的当前波形。

2. 发明授权

US07050325B2 Magnetic random access memory 失效
标题翻译：磁性随机存取存储器
公开(公告)号：US07050325B2
公开(公告)日：2006-05-23
申请号：US10438015
申请日：2003-05-15
申请人： Yoshihisa Iwata , Kentaro Nakajima
发明人： Yoshihisa Iwata , Kentaro Nakajima
IPC分类号： G11C11/14 , G11C11/15 , G11C7/00
CPC分类号： G11C11/16
摘要： In a magnetic random access memory (MRAM), setting data which determines the supply/cutoff timing, magnitude, and temporal change (current waveform) of a write word/bit line current is registered in a setting circuit. A write current waveform control circuit generates a write word line drive signal, write word line sink signal, write bit line drive signal, and write bit line sink signal on the basis of the setting data. The current waveform of the write word/bit line current is controlled for each chip or memory cell array.
摘要翻译：在磁性随机存取存储器（MRAM）中，将设定数据确定为写入字/位线电流的供给/截止时间，幅度和时间变化（电流波形）。写入电流波形控制电路根据设定数据生成写字线驱动信号，写字线吸收信号，写位线驱动信号和写位线吸收信号。对每个芯片或存储单元阵列控制写入字/位线电流的当前波形。

3. 发明申请

US20060092692A1 Magnetic random access memory 失效
标题翻译：磁性随机存取存储器
公开(公告)号：US20060092692A1
公开(公告)日：2006-05-04
申请号：US11305203
申请日：2005-12-19
申请人： Yoshihisa Iwata , Kentaro Nakajima
发明人： Yoshihisa Iwata , Kentaro Nakajima
IPC分类号： G11C11/00
CPC分类号： G11C11/16
摘要： Setting data which determines the supply/cutoff timing, magnitude, and temporal change (current waveform) of a write word/bit line current is registered in a setting circuit. A write current waveform control circuit generates a write word line drive signal, write word line sink signal, write bit line drive signal, and write bit line sink signal on the basis of the setting data. The current waveform of the write word/bit line current is controlled for each chip or memory cell array.
摘要翻译：确定写入字/位线电流的供应/截止时间，幅度和时间变化（电流波形）的设置数据被登记在设置电路中。写入电流波形控制电路根据设定数据生成写字线驱动信号，写字线吸收信号，写位线驱动信号和写位线吸收信号。对每个芯片或存储单元阵列控制写入字/位线电流的当前波形。

4. 发明授权

US07376003B2 Magnetic random access memory 有权
标题翻译：磁性随机存取存储器
公开(公告)号：US07376003B2
公开(公告)日：2008-05-20
申请号：US10465616
申请日：2003-06-20
申请人： Yoshihisa Iwata , Yoshiaki Asao , Kentaro Nakajima
发明人： Yoshihisa Iwata , Yoshiaki Asao , Kentaro Nakajima
IPC分类号： G11C11/00
CPC分类号： G11C11/16
摘要： A magnetic field H1 in the hard-axis direction and a magnetic field H2 in the easy-axis direction are caused to simultaneously act on a MTJ element having an ideal asteroid curve, thereby reversing the magnetizing direction of the storing layer of the MTJ element. When the actual asteroid curve shifts in the hard-axis direction by Ho, a corrected synthesized magnetic field ({right arrow over (H1)}+{right arrow over (H2)}+{right arrow over (Ho)}) is generated in write operation to reliably reverse the magnetizing direction. The corrected synthesized magnetic field can easily be generated by individually controlling a write word/bit line current on the basis of programmed setting data.
摘要翻译：使硬轴方向的磁场H 1和易轴方向的磁场H 2同时作用于具有理想的小行星曲线的MTJ元件，从而使MTJ的存储层的磁化方向反转元件。当实际的小行星曲线在硬轴方向上移动Ho时，产生校正的合成磁场（{H 1}} + {右箭头（H 2）} +（向右箭头（Ho））上的右箭头在写入操作中可靠地反转磁化方向，通过基于编程的设置数据单独地控制写入字/位线电流，可以容易地产生校正的合成磁场。

5. 发明授权

US07035137B2 Semiconductor memory device having memory cells including ferromagnetic films and control method thereof 失效
标题翻译：具有包含铁磁膜的存储单元的半导体存储器件及其控制方法
公开(公告)号：US07035137B2
公开(公告)日：2006-04-25
申请号：US10807454
申请日：2004-03-24
申请人： Yoshihisa Iwata , Kentaro Nakajima , Masayuki Sagoi , Yuui Shimizu
发明人： Yoshihisa Iwata , Kentaro Nakajima , Masayuki Sagoi , Yuui Shimizu
IPC分类号： G11C11/00 , G11C7/04
CPC分类号： G11C11/15
摘要： A semiconductor memory device comprises word lines, bit lines, memory cells, a row decoder, a column decoder, and a write circuit. The word lines are formed along a first direction. The bit lines are formed along a second direction. Memory cells include magneto-resistive elements and are arranged at intersections of the word lines and the bit lines. The row decoder selects at least one of the word lines. The column decoder selects at least one of the bit lines. The write circuit supplies first and second write currents to a selected word line and selected bit line respectively and writes data into a selected memory cell arranged at the intersection of the selected word line and the selected bit line. The write circuit changes the current values of the first and second write currents according to a temperature change.
摘要翻译：半导体存储器件包括字线，位线，存储单元，行解码器，列解码器和写电路。字线沿着第一方向形成。位线沿着第二方向形成。存储单元包括磁阻元件，并且布置在字线和位线的交点处。行解码器选择至少一个字线。列解码器选择至少一个位线。写入电路分别向所选择的字线和所选位线提供第一和第二写入电流，并将数据写入布置在所选择的字线和所选位线的交点处的选定存储单元。写入电路根据温度变化改变第一和第二写入电流的电流值。

6. 发明申请

US20050036362A1 Semiconductor memory device having memory cells including ferromagnetic films and control method thereof 失效
标题翻译：具有包含铁磁膜的存储单元的半导体存储器件及其控制方法
公开(公告)号：US20050036362A1
公开(公告)日：2005-02-17
申请号：US10807454
申请日：2004-03-24
申请人： Yoshihisa Iwata , Kentaro Nakajima , Masayuki Sagoi , Yuui Shimizu
发明人： Yoshihisa Iwata , Kentaro Nakajima , Masayuki Sagoi , Yuui Shimizu
IPC分类号： G11C11/15 , G11C29/04 , H01L21/8246 , H01L27/105 , H01L43/08 , G11C11/00
CPC分类号： G11C11/15
摘要： A semiconductor memory device comprises word lines, bit lines, memory cells, a row decoder, a column decoder, and a write circuit. The word lines are formed along a first direction. The bit lines are formed along a second direction. Memory cells include magneto-resistive elements and are arranged at intersections of the word lines and the bit lines. The row decoder selects at least one of the word lines. The column decoder selects at least one of the bit lines. The write circuit supplies first and second write currents to a selected word line and selected bit line respectively and writes data into a selected memory cell arranged at the intersection of the selected word line and the selected bit line. The write circuit changes the current values of the first and second write currents according to a temperature change.
摘要翻译：半导体存储器件包括字线，位线，存储单元，行解码器，列解码器和写电路。字线沿着第一方向形成。位线沿着第二方向形成。存储单元包括磁阻元件，并且布置在字线和位线的交点处。行解码器选择至少一个字线。列解码器选择至少一个位线。写入电路分别向所选择的字线和所选位线提供第一和第二写入电流，并将数据写入布置在所选择的字线和所选位线的交点处的选定存储单元。写入电路根据温度变化改变第一和第二写入电流的电流值。

7. 发明授权

US07291506B2 Magnetic memory device and method of manufacturing the same 有权
标题翻译：磁记忆体装置及其制造方法
公开(公告)号：US07291506B2
公开(公告)日：2007-11-06
申请号：US11171323
申请日：2005-07-01
申请人： Kentaro Nakajima , Minoru Amano , Tomomasa Ueda , Shigeki Takahashi
发明人： Kentaro Nakajima , Minoru Amano , Tomomasa Ueda , Shigeki Takahashi
IPC分类号： H01L21/00
CPC分类号： C23F4/00 , B82Y10/00 , B82Y25/00 , B82Y40/00 , H01F10/3254 , H01F41/308 , H01L27/228 , H01L43/08 , H01L43/12
摘要： A method of manufacturing a magnetic memory device includes forming an insulation layer on a substrate, forming a lower electrode on the insulation layer, forming a magneto-resistive film on an upper surface of the lower electrode, the magneto-resistive film including an insulation barrier layer and a plurality of magnetic films stacked on both sides of the insulation barrier layer, stacking a mask layer on the magneto-resistive film, performing ion etching on the magneto-resistive film, using the mask layer as a mask, thereby forming a magneto-resistive element, forming an insulation film on upper surfaces of the mask, the magneto-resistive element and the lower electrode, and etching the insulation film with an ion beam such that a side surface of the magneto-resistive element is exposed.
摘要翻译：一种制造磁存储器件的方法包括在衬底上形成绝缘层，在绝缘层上形成下电极，在下电极的上表面上形成磁阻膜，该磁阻膜包括绝缘屏障层和层叠在绝缘阻挡层的两侧的多个磁性膜，使用掩模层作为掩模将掩模层堆叠在磁阻膜上，对磁阻膜进行离子蚀刻，从而形成磁电阻元件，在掩模的上表面，磁阻元件和下电极上形成绝缘膜，并用离子束蚀刻绝缘膜，使得磁阻元件的侧表面露出。

8. 发明授权

US07140096B2 Method of manufacturing a magnetoresistance effect device 失效
标题翻译：制造磁阻效应器件的方法
公开(公告)号：US07140096B2
公开(公告)日：2006-11-28
申请号：US10626707
申请日：2003-07-25
申请人： Tatsuya Kishi , Shigeki Takahashi , Kentaro Nakajima , Minoru Amano , Masayuki Sagoi , Yoshiaki Saito
发明人： Tatsuya Kishi , Shigeki Takahashi , Kentaro Nakajima , Minoru Amano , Masayuki Sagoi , Yoshiaki Saito
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： H01L27/228 , B82Y10/00 , B82Y25/00 , G11B5/3903 , G11B5/3909 , G11B5/398 , G11B2005/3996 , G11C11/16 , H01F10/3254 , H01L43/08 , Y10S428/90 , Y10T29/49043 , Y10T29/49048 , Y10T29/4905 , Y10T29/49052 , Y10T428/24942 , Y10T428/26 , Y10T428/265 , Y10T428/32
摘要： A method of manufacturing a magnetoresistance effect device, including: forming a first ferromagnetic body, a nonmagnetic dielectric layer on the first ferromagnetic body, and a second ferromagnetic body on the nonmagnetic dielectric layer; etching part of an external region of a predetermined ferromagnetic tunnel junction region using a first linear mask pattern which is traversing the predetermined ferromagnetic tunnel junction region; and etching another part of the external region of the predetermined ferromagnetic tunnel junction region using a second linear mask pattern which is traversing the predetermined ferromagnetic tunnel junction region and intersecting with the first linear mask pattern.
摘要翻译：一种制造磁阻效应器件的方法，包括：在第一铁磁体上形成第一铁磁体，非磁性介质层和非磁介质层上的第二铁磁体; 使用穿过所述预定铁磁隧道结区域的第一线性掩模图案来蚀刻预定铁磁隧道结区域的外部区域的一部分; 以及使用穿过所述预定铁磁隧道结区并与所述第一线性掩模图案相交的第二线性掩模图案来蚀刻所述预定铁磁隧道结区域的外部区域的另一部分。

9. 发明授权

US06995962B2 Ferromagnetic double tunnel junction element with asymmetric energy band 有权
标题翻译：具有不对称能带的铁磁双隧道结元件
公开(公告)号：US06995962B2
公开(公告)日：2006-02-07
申请号：US10968336
申请日：2004-10-20
申请人： Yoshiaki Saito , Masayuki Sagoi , Minoru Amano , Kentaro Nakajima , Shigeki Takahashi , Tatsuya Kishi
发明人： Yoshiaki Saito , Masayuki Sagoi , Minoru Amano , Kentaro Nakajima , Shigeki Takahashi , Tatsuya Kishi
IPC分类号： G11B5/39
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G11B5/3903 , G11B5/3909 , G11B5/3954 , G11C11/15 , G11C11/16 , H01L27/224 , H01L27/228
摘要： There is provided a magnetoresistance effect element including a first pinned ferromagnetic layer, a second pinned ferromagnetic layer facing the first pinned ferromagnetic layer, surface regions of the first and second pinned ferromagnetic layer facing each other being different from each other in composition, a free ferromagnetic layer intervening between the first and second pinned ferromagnetic layers, a first tunnel barrier layer intervening between the first pinned ferromagnetic layer and the free ferromagnetic layer, and a second tunnel barrier layer intervening between the second pinned ferromagnetic layer and the free ferromagnetic layer.
摘要翻译：提供了一种磁阻效应元件，包括第一被钉扎铁磁层，面对第一被钉扎铁磁层的第二钉扎铁磁层，第一和第二钉扎铁磁层彼此面对的表面区域在组成上彼此不同，自由铁磁性介于第一和第二被钉扎铁磁层之间的介电层，介于第一被钉扎铁磁层和自由铁磁层之间的第一隧道势垒层以及介于第二钉扎铁磁层与自由铁磁层之间的第二隧道势垒层。

10. 发明授权

US06965138B2 Magnetic memory device and method of manufacturing the same 有权
公开(公告)号：US06965138B2
公开(公告)日：2005-11-15
申请号：US10702574
申请日：2003-11-07
申请人： Kentaro Nakajima , Minoru Amano , Tomomasa Ueda , Shigeki Takahashi
发明人： Kentaro Nakajima , Minoru Amano , Tomomasa Ueda , Shigeki Takahashi
IPC分类号： H01L27/105 , C23F4/00 , G11C11/00 , G11C11/02 , H01F10/32 , H01F41/30 , H01L21/336 , H01L21/8246 , H01L27/00 , H01L27/22 , H01L29/76 , H01L31/119 , H01L43/08 , H01L43/12
CPC分类号： C23F4/00 , B82Y10/00 , B82Y25/00 , B82Y40/00 , H01F10/3254 , H01F41/308 , H01L27/228 , H01L43/08 , H01L43/12
摘要： A method of manufacturing a magnetic memory device includes forming an insulation layer on a substrate, forming a lower electrode on the insulation layer, forming a magneto-resistive film on an upper surface of the lower electrode, the magneto-resistive film including an insulation barrier layer and a plurality of magnetic films stacked on both sides of the insulation barrier layer, stacking a mask layer on the magneto-resistive film, performing ion etching on the magneto-resistive film, using the mask layer as a mask, thereby forming a magneto-resistive element, forming an insulation film on upper surfaces of the mask, the magneto-resistive element and the lower electrode, and etching the insulation film with an ion beam such that a side surface of the magneto-resistive element is exposed.

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