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    • 93. 发明申请
    • Solid state image pickup device
    • 固态图像拾取装置
    • US20070235781A1
    • 2007-10-11
    • US11810440
    • 2007-06-05
    • Hiroaki FujitaRyoji SuzukiNobuo NakamuraYasushi Maruyama
    • Hiroaki FujitaRyoji SuzukiNobuo NakamuraYasushi Maruyama
    • H01L31/06
    • H01L27/14609H01L27/1463H01L27/14643
    • P type semiconductor well regions 8 and 9 for device separation are provided in an upper and lower two layer structure in conformity with the position of a high sensitivity type photodiode PD, and the first P type semiconductor well region 8 at the upper layer is provided in the state of being closer to the pixel side than an end portion of a LOCOS layer 1A, for limiting a dark current generated at the end portion of the LOCOS layer 1A. In addition, the second P type semiconductor well region 9 at the lower layer is formed in a narrow region receding from the photodiode PD, so that the depletion layer of the photodiode PD is prevented from being obstructed, and the depletion is secured in a sufficiently broad region, whereby enhancement of the sensitivity of the photodiode PD can be achieved.
    • 以与高灵敏度型光电二极管PD的位置一致的上下两层结构设置用于器件分离的P型半导体阱区域8和9,并且上层的第一P型半导体阱区域8设置在 比LOCOS层1A的端部更靠近像素侧的状态,用于限制在LOCOS层11A的端部处产生的暗电流。此外,第二P型半导体阱区9 在从光电二极管PD退出的窄区域中形成下层,从而防止光电二极管PD的耗尽层受到阻碍,并且在足够宽的区域中确保了耗尽,从而提高光电二极管PD的灵敏度 实现。
    • 94. 发明授权
    • Solid-state image pickup device and signal processing method therefor
    • 固体摄像装置及其信号处理方法
    • US07227570B2
    • 2007-06-05
    • US10449125
    • 2003-06-02
    • Hiroki SatoKeiji MabuchiNobuo NakamuraTetsuya Iizuka
    • Hiroki SatoKeiji MabuchiNobuo NakamuraTetsuya Iizuka
    • H04N5/228
    • H04N5/335
    • The invention makes it possible to perform effective A/D conversion on pixel signals read from a pixel array part, to achieve a reduction in power consumption and reductions in the size and the price of an image pickup device as well as simplification of the construction of the device, and to realize a high-quality image output. The device includes an pixel array part having a plurality of unit pixels, a CDS (correlated double sampling) circuit, and an A/D converter. A pixel signal read from a pixel array part via a signal line is subjected to CDS processing (noise elimination processing) in the CDS circuit, and then this pixel signal is inputted into the A/D converter which performs A/D conversion on the pixel signal. The A/D converter includes a ΔΣ modulator and a digital filter to perform highly accurate A/D conversion. The invention can also be applied to a construction in which an A/D converter is provided at the front stage of the CDS circuit.
    • 本发明使得可以对从像素阵列部分读取的像素信号进行有效的A / D转换,以实现图像拾取装置的功耗的降低和尺寸和价格的降低以及简化的 该设备,并实现高质量的图像输出。 该装置包括具有多个单位像素的像素阵列部分,CDS(相关双采样)电路和A / D转换器。 经由信号线从像素阵列部分读取的像素信号在CDS电路中进行CDS处理(噪声消除处理),然后将该像素信号输入到对像素进行A / D转换的A / D转换器 信号。 A / D转换器包括DeltaSigma调制器和数字滤波器,以执行高精度的A / D转换。 本发明也可以应用于在CDS电路的前级设置A / D转换器的结构。
    • 98. 发明授权
    • CMOS imaging device for amplifying and fetching signal charge
    • 用于放大和取出信号电荷的CMOS成像装置
    • US06999120B1
    • 2006-02-14
    • US09680968
    • 2000-10-06
    • Yoshitaka EgawaShinji OhsawaYukio EndoNobuo Nakamura
    • Yoshitaka EgawaShinji OhsawaYukio EndoNobuo Nakamura
    • H04N5/335
    • H04N5/353H04N5/3653
    • Disclosed is a solid-state imaging device comprising pickup circuit formed by the arrangement of a unit cell in two dimensions, a plurality of reading lines provided in a horizontal direction corresponding to each pixel row in the pickup region to transmit the reading drive signal φREADi for driving each reading circuit of the unit cell of respectively corresponding pixel row, a vertical drive selection circuit configured to drive the reading circuit by selectively supplying the reading drive signal to these reading lines, and first row selection circuit and a second row selection circuit configured to control the vertical drive circuit so as to drive reading circuit of each pixel row on the basis of the first pulse and the second pulse φROREAD and φESREAD respectively. The solid-state imaging device is capable of controlling a minimum electric charge accumulation time in the photodiode to less than 1H (a horizontal cycle) and is capable of conducting an extremely high-speed shutter operation.
    • 公开了一种固态成像装置,其包括通过在二维中布置单位单元而形成的拾取电路,在与拾取区域中的每个像素行对应的水平方向上设置的多条读取线,以将读取驱动信号phiREADi传送给 驱动分别对应的像素行的单元的每个读取电路;垂直驱动选择电路,被配置为通过向这些读取线选择性地提供读取驱动信号来驱动读取电路,以及第一行选择电路和第二行选择电路, 控制垂直驱动电路,以分别基于第一脉冲和第二脉冲phiROREAD和phiESREAD来驱动每个像素行的读取电路。 固态成像装置能够将光电二极管中的最小电荷积累时间控制为小于1H(水平周期),并且能够进行极高速的快门操作。
    • 99. 发明申请
    • Magnetooptic element and process for fabricating the same and optical isolator incorporating it
    • 磁光元件及其制造方法及其结合的光隔离器
    • US20060013076A1
    • 2006-01-19
    • US10531284
    • 2003-11-11
    • Toshiki KishimotoNobuo Nakamura
    • Toshiki KishimotoNobuo Nakamura
    • G11B11/00
    • G02F1/093
    • A magnetic optical element having a Faraday rotator and a polarizer provided integrally on the light transmitting surface of the Faraday rotator; the magnetic optical element being characterized by being constituted of i) a Faraday rotator on each side of which an anti-reflection film has been formed and ii) a polarizer comprising photonic crystals which has been formed on one anti-reflection film. Then, in this magnetic optical element, insofar as no substrate for the polarizer is present, the whole magnetic optical element integrally made up of the Faraday rotator and the photonic-crystal polarizer can be made small in thickness, and hence, when cut into small chips, the chips can not easily scatter, also having the effect of enabling production of inexpensive optical isolators.
    • 一种具有法拉第旋转器和偏振器的磁性光学元件整体设置在法拉第旋转器的透光表面上; 磁性光学元件的特征在于:i)在其每一侧上形成有防反射膜的法拉第旋转器,以及ii)包括在一个防反射膜上形成的光子晶体的偏振器。 然后,在该磁性光学元件中,只要不存在用于偏振器的基板,则可以使由法拉第旋转器和光子晶体偏振器一体地组成的整个磁光学元件的厚度较小,因此当切割成小 芯片,芯片不易散射,还具有能够生产便宜的光隔离器的效果。