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1. 发明授权

US08431879B2 Solid-state imaging device and drive control method for the same 有权
公开(公告)号：US08431879B2
公开(公告)日：2013-04-30
申请号：US12231365
申请日：2008-09-02
申请人： Keiji Mabuchi , Eiichi Funatsu , Masanori Kasai
发明人： Keiji Mabuchi , Eiichi Funatsu , Masanori Kasai
IPC分类号： H01L27/00
CPC分类号： H04N5/378 , H04N5/2253 , H04N5/3559 , H04N5/365 , H04N5/3698 , H04N5/37213 , H04N5/374 , H04N5/376 , H04N5/3765
摘要： A CMOS sensor has unit pixels each structured by a light receiving element and three transistors, to prevent against the phenomenon of saturation shading and the reduction of dynamic range. The transition time (fall time), in switching off the voltage on a drain line shared in all pixels, is given longer than the transition time in turning of any of the reset line and the transfer line. For this reason, the transistor constituting a DRN drive buffer is made proper in its W/L ratio. Meanwhile, a control resistance or current source is inserted on a line to the GND, to make proper the operation current during driving. This reduces saturation shading amount. By making a reset transistor in a depression type, the leak current to a floating diffusion is suppressed to broaden the dynamic range.

2. 发明授权

US08035105B2 Solid state image pickup device and method of producing solid state image pickup device 有权
标题翻译：固体摄像装置及固体摄像装置的制造方法
公开(公告)号：US08035105B2
公开(公告)日：2011-10-11
申请号：US12795442
申请日：2010-06-07
申请人： Takashi Abe , Nobuo Nakamura , Keiji Mabuchi , Tomoyuki Umeda , Hiroaki Fujita , Eiichi Funatsu , Hiroki Sato
发明人： Takashi Abe , Nobuo Nakamura , Keiji Mabuchi , Tomoyuki Umeda , Hiroaki Fujita , Eiichi Funatsu , Hiroki Sato
IPC分类号： H01L29/76
CPC分类号： H01L27/14643 , H01L23/544 , H01L27/14603 , H01L27/14607 , H01L27/14609 , H01L27/14612 , H01L27/1462 , H01L27/14623 , H01L27/14625 , H01L27/14627 , H01L27/1463 , H01L27/14632 , H01L27/14636 , H01L27/1464 , H01L27/14683 , H01L27/14685 , H01L27/14687 , H01L31/02162 , H01L31/0232 , H01L31/02327 , H01L2223/54426 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
摘要： Forming a back-illuminated type CMOS image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during formation of an active region or a gate electrode. A silicide film using an active region may also be used for the registration mark. Thereafter, the registration mark is read from the back side by use of red light or near infrared rays, and registration of the stepper is accomplished. It is also possible to form a registration mark in a silicon oxide film on the back side (illuminated side) in registry with the registration mark on the wiring side, and to achieve the desired registration by use of the registration mark thus formed.
摘要翻译：形成背照式CMOS图像传感器包括在形成有源区或栅电极期间在硅衬底的布线侧上形成配准标记的工艺。使用活性区域的硅化物膜也可以用于配准标记。此后，通过使用红光或近红外线从背面读取对准标记，并且完成步进机的配准。也可以在背面（照明侧）的氧化硅膜上形成配准标记，与配线侧的配准标记对准，并且通过使用由此形成的配准标记来实现所需的配准。

3. 发明申请

US20110221021A1 Solid state image pickup device and method of producing solid state image pickup device 有权
公开(公告)号：US20110221021A1
公开(公告)日：2011-09-15
申请号：US13064787
申请日：2011-04-15
申请人： Takashi Abe , Nobuo Nakamura , Keiji Mabuchi , Tomoyuki Umeda , Hiroaki Fujita , Eiichi Funatsu , Hiroki Sato
发明人： Takashi Abe , Nobuo Nakamura , Keiji Mabuchi , Tomoyuki Umeda , Hiroaki Fujita , Eiichi Funatsu , Hiroki Sato
IPC分类号： H01L31/0232
CPC分类号： H01L27/14643 , H01L23/544 , H01L27/14603 , H01L27/14607 , H01L27/14609 , H01L27/14612 , H01L27/1462 , H01L27/14623 , H01L27/14625 , H01L27/14627 , H01L27/1463 , H01L27/14632 , H01L27/14636 , H01L27/1464 , H01L27/14683 , H01L27/14685 , H01L27/14687 , H01L31/02162 , H01L31/0232 , H01L31/02327 , H01L2223/54426 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
摘要： Forming a back-illuminated type CMOS image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during formation of an active region or a gate electrode. A silicide film using an active region may also be used for the registration mark. Thereafter, the registration mark is read from the back side by use of red light or near infrared rays, and registration of the stepper is accomplished. It is also possible to form a registration mark in a silicon oxide film on the back side (illuminated side) in registry with the registration mark on the wiring side, and to achieve the desired registration by use of the registration mark thus formed.

4. 发明授权

US07582503B2 Solid state image pickup device and method of producing solid state image pickup device 有权
标题翻译：固体摄像装置及固体摄像装置的制造方法
公开(公告)号：US07582503B2
公开(公告)日：2009-09-01
申请号：US11973237
申请日：2007-10-05
申请人： Takashi Abe , Nobuo Nakamura , Keiji Mabuchi , Tomoyuki Umeda , Hiroaki Fujita , Eiichi Funatsu , Hiroki Sato
发明人： Takashi Abe , Nobuo Nakamura , Keiji Mabuchi , Tomoyuki Umeda , Hiroaki Fujita , Eiichi Funatsu , Hiroki Sato
IPC分类号： H01L21/00
CPC分类号： H01L27/14643 , H01L23/544 , H01L27/14603 , H01L27/14607 , H01L27/14609 , H01L27/14612 , H01L27/1462 , H01L27/14623 , H01L27/14625 , H01L27/14627 , H01L27/1463 , H01L27/14632 , H01L27/14636 , H01L27/1464 , H01L27/14683 , H01L27/14685 , H01L27/14687 , H01L31/02162 , H01L31/0232 , H01L31/02327 , H01L2223/54426 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
摘要： Forming a back-illuminated type CMOS image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during formation of an active region or a gate electrode. A silicide film using an active region may also be used for the registration mark. Thereafter, the registration mark is read from the back side by use of red light or near infrared rays, and registration of the stepper is accomplished. It is also possible to form a registration mark in a silicon oxide film on the back side (illuminated side) in registry with the registration mark on the wiring side, and to achieve the desired registration by use of the registration mark thus formed.
摘要翻译：形成背照式CMOS图像传感器包括在形成有源区或栅电极期间在硅衬底的布线侧上形成配准标记的工艺。使用活性区域的硅化物膜也可以用于配准标记。此后，通过使用红光或近红外线从背面读取对准标记，并且完成步进机的配准。也可以在背面（照明侧）的氧化硅膜上形成配准标记，与配线侧的配准标记对准，并且通过使用由此形成的配准标记来实现所需的配准。

5. 发明授权

US07515185B2 Solid-state imaging device 有权
标题翻译：固态成像装置
公开(公告)号：US07515185B2
公开(公告)日：2009-04-07
申请号：US10509977
申请日：2003-04-04
申请人： Nobuo Nakamura , Tomoyuki Umeda , Keiji Mabuchi , Hiroaki Fujita , Takashi Abe , Eiichi Funatsu , Hiroki Sato
发明人： Nobuo Nakamura , Tomoyuki Umeda , Keiji Mabuchi , Hiroaki Fujita , Takashi Abe , Eiichi Funatsu , Hiroki Sato
IPC分类号： H04N5/335 , H01L27/148
CPC分类号： H04N5/3597 , H04N5/3698 , H04N5/3741
摘要： A solid-state imaging device for enlarging an operating margin of a pixel portion and achieving complete transfer of a signal charge by using a plurality of power supply voltages, wherein a plurality of power supplies having different power supply voltage values are supplied to portions of a semiconductor chip 1. For example, as a first power supply system, a first digital power supply voltage (DVDD1) is supplied from a power supply terminal 45, a first digital ground voltage (DVSS1) is supplied from a power supply terminal 46, a second digital power supply voltage (DVDD2) is supplied from a power supply terminal 47, a second digital ground voltage (DVSS2) is supplied from a power supply terminal 48, a third digital power supply (DVDD3) is supplied from a power supply terminal 49, and a third digital ground voltage (DVSS3) is supplied from a power supply terminal 50, and as a second power supply system, a first analog power supply voltage (AVDD1) is supplied from a power supply terminal 40, a first analog ground voltage (AVSS1) is supplied from a power supply terminal 41, a second analog power supply voltage (AVDD2) is supplied from a power supply terminal 42, and a second analog ground voltage (AVSS2) is supplied from a power supply terminal 43.
摘要翻译：一种固态成像装置，用于放大像素部分的工作裕度并通过使用多个电源电压实现信号电荷的完全传送，其中具有不同电源电压值的多个电源被提供给半导体芯片1.例如，作为第一电源系统，从电源端子45供给第一数字电源电压（DVDD1），从电源端子46供给第一数字接地电压（DVSS1）从电源端子47供给第二数字电源电压（DVDD2），从电源端子48供给第二数字接地电压（DVSS2），从电源端子49供给第三数字电源（DVDD3），并且从电源端子50提供第三数字接地电压（DVSS3），作为第二电源系统，从电源端子提供第一模拟电源电压（AVDD1）如图40所示，从电源端子41提供第一模拟地电压（AVSS1），从电源端子42提供第二模拟电源电压（AVDD2），从第二模拟电源电压（AVSS2）供给第二模拟接地电压电源端子43。

6. 发明申请

US20080102554A1 Solid state image pickup device and method of producing solid state image pickup device 有权
标题翻译：固体摄像装置及固体摄像装置的制造方法
公开(公告)号：US20080102554A1
公开(公告)日：2008-05-01
申请号：US11973237
申请日：2007-10-05
申请人： Takashi Abe , Nobuo Nakamura , Keiji Mabuchi , Tomoyuki Umeda , Hiroaki Fujita , Eiichi Funatsu , Hiroki Sato
发明人： Takashi Abe , Nobuo Nakamura , Keiji Mabuchi , Tomoyuki Umeda , Hiroaki Fujita , Eiichi Funatsu , Hiroki Sato
IPC分类号： H01L31/18
CPC分类号： H01L27/14643 , H01L23/544 , H01L27/14603 , H01L27/14607 , H01L27/14609 , H01L27/14612 , H01L27/1462 , H01L27/14623 , H01L27/14625 , H01L27/14627 , H01L27/1463 , H01L27/14632 , H01L27/14636 , H01L27/1464 , H01L27/14683 , H01L27/14685 , H01L27/14687 , H01L31/02162 , H01L31/0232 , H01L31/02327 , H01L2223/54426 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
摘要： Forming a back-illuminated type CMOS image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during formation of an active region or a gate electrode. A silicide film using an active region may also be used for the registration mark. Thereafter, the registration mark is read from the back side by use of red light or near infrared rays, and registration of the stepper is accomplished. It is also possible to form a registration mark in a silicon oxide film on the back side (illuminated side) in registry with the registration mark on the wiring side, and to achieve the desired registration by use of the registration mark thus formed.
摘要翻译：形成背照式CMOS图像传感器包括在形成有源区或栅电极期间在硅衬底的布线侧上形成配准标记的工艺。使用活性区域的硅化物膜也可以用于配准标记。此后，通过使用红光或近红外线从背面读取对准标记，并且完成步进机的配准。也可以在背面（照明侧）的氧化硅膜上形成配准标记，与配线侧的配准标记对准，并且通过使用由此形成的配准标记来实现所需的配准。

7. 发明申请

US20080042175A1 Solid state image pickup device and method of producing solid state image pickup device 有权
公开(公告)号：US20080042175A1
公开(公告)日：2008-02-21
申请号：US11973562
申请日：2007-10-09
申请人： Takashi Abe , Nobuo Nakamura , Keiji Mabuchi , Tomoyuki Umeda , Hiroaki Fujita , Eiichi Funatsu , Hiroki Sato
发明人： Takashi Abe , Nobuo Nakamura , Keiji Mabuchi , Tomoyuki Umeda , Hiroaki Fujita , Eiichi Funatsu , Hiroki Sato
IPC分类号： H01L31/0232 , H01L27/146
CPC分类号： H01L27/14643 , H01L23/544 , H01L27/14603 , H01L27/14607 , H01L27/14609 , H01L27/14612 , H01L27/1462 , H01L27/14623 , H01L27/14625 , H01L27/14627 , H01L27/1463 , H01L27/14632 , H01L27/14636 , H01L27/1464 , H01L27/14683 , H01L27/14685 , H01L27/14687 , H01L31/02162 , H01L31/0232 , H01L31/02327 , H01L2223/54426 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
摘要： Forming a back-illuminated type CMOS image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during formation of an active region or a gate electrode. A silicide film using an active region may also be used for the registration mark. Thereafter, the registration mark is read from the back side by use of red light or near infrared rays, and registration of the stepper is accomplished. It is also possible to form a registration mark in a silicon oxide film on the back side (illuminated side) in registry with the registration mark on the wiring side, and to achieve the desired registration by use of the registration mark thus formed.

8. 发明申请

US20080029837A1 Solid-state imaging device 有权
标题翻译：固态成像装置
公开(公告)号：US20080029837A1
公开(公告)日：2008-02-07
申请号：US11825579
申请日：2007-07-06
申请人： Shinjiro Kameda , Eiichi Funatsu
发明人： Shinjiro Kameda , Eiichi Funatsu
IPC分类号： H01L31/00
CPC分类号： H01L27/14601 , H01L27/14603
摘要： A solid-state imaging device is provided. The solid-state imaging device includes an imaging region having a plurality of pixels arranged in a two-dimensional array, in which the imaging region includes an effective pixel and a black reference pixel; and a shape of a floating diffusion portion in the effective pixel is different from that of a floating diffusion portion in the black reference pixel.
摘要翻译：提供固态成像装置。该固态成像装置包括具有以二维阵列排列的多个像素的成像区域，其中成像区域包括有效像素和黑色参考像素; 并且有效像素中的浮动扩散部分的形状与黑色参考像素中的浮动扩散部分的形状不同。

9. 发明申请

US20060203113A1 Solid-state image pickup device and drive method thereof 失效
标题翻译：固体摄像装置及其驱动方法
公开(公告)号：US20060203113A1
公开(公告)日：2006-09-14
申请号：US10545740
申请日：2004-02-20
申请人： Takamasa Wada , Eiichi Funatsu , Keiji Mabuchi , Ken Nakajima , Katsuaki Hirota , Nobuyuki Satou , Takashi Abe , Tomoyuki Umeda , Nobuo Nakamura , Hiroaki Fujita , Hiroki Sato
发明人： Takamasa Wada , Eiichi Funatsu , Keiji Mabuchi , Ken Nakajima , Katsuaki Hirota , Nobuyuki Satou , Takashi Abe , Tomoyuki Umeda , Nobuo Nakamura , Hiroaki Fujita , Hiroki Sato
IPC分类号： H04N3/14 , H04N5/335
CPC分类号： H04N9/045 , H04N5/3456 , H04N5/3458 , H04N5/347 , H04N5/374
摘要： When pixels are simply skipped while keeping both an order of pixel information and a spatial positional relation the same as those in all-pixel readout, since a distance between pixels to be read out increases, the Nyquist frequency decreases and aliasing noise increases. A 5×5 pixel block is set as a unit pixel block and pieces of pixel information in first, third, and fifth columns of first, third, and fifth rows of a pixel arrangement are added and outputted as an output in an ath row and an ath column of the unit pixel block. Then, pieces of pixel information in sixth, eighth, and tenth columns of the first, the third, and the fifth rows of the pixel arrangement are added and outputted as an output in the ath row and a bth column of the unit pixel block. Subsequently, pieces of pixel information are added and outputted up to a last column or a column near the last column. Thereafter, pieces of pixel information in the first, the third, and the fifth columns of the sixth, the eighth, and the tenth rows of the pixel arrangement are added and outputted as an output in a bth row and the ath column of the unit pixel block. Subsequently, all arbitrary pixels are read out while repeating the same operation and skipping and adding pieces of pixel information.
摘要翻译：当像素被简单地跳过同时保持像素信息的顺序和空间位置关系与全像素读出中的顺序相同时，由于要读出的像素之间的距离增加，所以奈奎斯特频率降低并且混叠噪声增加。将5×5像素块设置为单位像素块，并且将像素布置的第一，第三和第五行的第一，第三和第五列中的像素信息的像素信息相加并输出为运动行中的输出，并且运动单位像素块的列。然后，将像素配置的第一，第三和第五行的第六列，第八列和第五列中的像素信息的像素信息相加并输出为单位像素块的运动行和第b列中的输出。随后，将像素信息添加并输出到最后一列或靠近最后一列的列。此后，将像素配置的第六行，第八行和第十行的第一列，第三列和第五列中的像素信息相加并输出为第b行的输出和单元的运动列像素块。随后，在重复相同的操作并跳过和添加像素信息的同时读出所有任意像素。

10. 发明授权

US08519502B2 Solid-state imaging device 有权
标题翻译：固态成像装置
公开(公告)号：US08519502B2
公开(公告)日：2013-08-27
申请号：US11825579
申请日：2007-07-06
申请人： Shinjiro Kameda , Eiichi Funatsu
发明人： Shinjiro Kameda , Eiichi Funatsu
IPC分类号： H01L31/115
CPC分类号： H01L27/14601 , H01L27/14603
摘要： A solid-state imaging device is provided. The solid-state imaging device includes an imaging region having a plurality of pixels arranged in a two-dimensional array, in which the imaging region includes an effective pixel and a black reference pixel; and a shape of a floating diffusion portion in the effective pixel is different from that of a floating diffusion portion in the black reference pixel.
摘要翻译：提供固态成像装置。该固态成像装置包括具有以二维阵列排列的多个像素的成像区域，其中成像区域包括有效像素和黑色参考像素; 并且有效像素中的浮动扩散部分的形状与黑色参考像素中的浮动扩散部分的形状不同。

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