专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

91. 发明申请

US20110108841A1 SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, AND DISPLAY APPARATUS USING THE SEMICONDUCTOR DEVICE 失效
标题翻译：半导体器件及其制造方法以及使用半导体器件的显示器件
公开(公告)号：US20110108841A1
公开(公告)日：2011-05-12
申请号：US13001428
申请日：2009-06-26
申请人： Junichi Hanna , Isao Suzumura , Mieko Matsumura , Mutsuko Hatano , Kenichi Onisawa , Masatoshi Wakagi , Etsuko Nishimura , Akiko Kagatsume
发明人： Junichi Hanna , Isao Suzumura , Mieko Matsumura , Mutsuko Hatano , Kenichi Onisawa , Masatoshi Wakagi , Etsuko Nishimura , Akiko Kagatsume
IPC分类号： H01L29/04 , H01L21/20
CPC分类号： H01L21/02422 , H01L21/02532 , H01L21/0262 , H01L21/02639 , H01L21/02645 , H01L27/1277 , H01L27/1281 , H01L27/3262 , H01L29/66742 , H01L29/78687
摘要： Provided is a method of promoting a deposition of semiconductor crystal nuclei on an insulating film such as a silicon oxide film even at a low temperature of 450° C. or lower in a reactive thermal CVD method. As one means thereof, a first semiconductor film is formed on an insulating substrate, and then semiconductor crystal nuclei are formed on parts of the first semiconductor film and simultaneously the first semiconductor film other than that in forming regions of the semiconductor crystal nuclei and their peripheries is removed by etching. Thereafter, a second semiconductor film is formed with using the semiconductor crystal nuclei as seeds.
摘要翻译：提供了即使在450℃以下的低温反应性热CVD法中也能够使半导体晶体核沉积在氧化硅膜等绝缘膜上的方法。作为其一种方法，在绝缘基板上形成第一半导体膜，然后在第一半导体膜的部分上形成半导体晶体核，并且同时形成第一半导体膜，而不是形成半导体晶体核的区域及其周边通过蚀刻去除。此后，使用半导体晶体核作为晶种形成第二半导体膜。

92. 发明授权

US07939826B2 Thin film semiconductor device 有权
标题翻译：薄膜半导体器件
公开(公告)号：US07939826B2
公开(公告)日：2011-05-10
申请号：US12258738
申请日：2008-10-27
申请人： Shinya Yamaguchi , Mutsuko Hatano , Mitsuharu Tai , Sedng-Kee Park , Takeo Shiba
发明人： Shinya Yamaguchi , Mutsuko Hatano , Mitsuharu Tai , Sedng-Kee Park , Takeo Shiba
IPC分类号： H01L29/10
CPC分类号： H01L27/1285 , H01L21/02422 , H01L21/02532 , H01L21/02595 , H01L21/02609 , H01L21/02675 , H01L21/02691 , H01L27/1296 , H01L29/04 , H01L29/66757 , H01L29/78675
摘要： A thin film semiconductor device is provided which includes an insulating substrate, a Si thin film formed over the insulating substrate, and a transistor with the Si thin film as a channel thereof. The Si thin film includes a polycrystal where a plurality of narrow, rectangular crystal grains are arranged. A surface of the polycrystal is flat at grain boundaries thereof. Also, an average film thickness of the boundaries of crystals of the Si thin film ranges from 90 to 110% of an intra-grain average film thickness.
摘要翻译：提供一种薄膜半导体器件，其包括绝缘衬底，形成在绝缘衬底上的Si薄膜，以及具有Si薄膜作为其沟道的晶体管。 Si薄膜包括其中布置有多个窄的矩形晶粒的多晶体。多晶的表面在其晶界处是平坦的。此外，Si薄膜的晶体边界的平均膜厚度在晶粒内平均膜厚度的90〜110％的范围内。

93. 发明申请

US20110102700A1 IMAGE DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：图像显示装置及其制造方法
公开(公告)号：US20110102700A1
公开(公告)日：2011-05-05
申请号：US12938524
申请日：2010-11-03
申请人： Naoya OKADA , Takashi Hattori , Takahide Kuranaga , Mutsuko Hatano
发明人： Naoya OKADA , Takashi Hattori , Takahide Kuranaga , Mutsuko Hatano
IPC分类号： G02F1/1333 , H01L51/52 , H01L51/56
CPC分类号： H01L29/78603 , G02F1/133305 , G02F2001/133337 , H01L27/1218 , H01L27/3262
摘要： Provided is an image display device including: a resin member; a TFT circuit layer formed above the resin member; and an inorganic film formed on a surface of the resin member to be formed between the resin member and the TFT circuit layer, in which the inorganic film has a stress acting thereon, the stress being, at a glass transition point (Tg) of the resin member, in the range of equal to or higher than −300 MPa to equal to or lower than 200 MPa, while, at a room temperature, in the range of equal to or higher than −400 MPa to equal to or lower than 50 MPa.
摘要翻译：提供一种图像显示装置，包括：树脂构件; 形成在树脂部件上方的TFT电路层; 以及形成在树脂构件的表面上的无机膜，以形成在树脂构件和TFT电路层之间，其中无机膜具有作用在其上的应力，应力在玻璃化转变点（Tg）处树脂构件在等于或高于-300MPa至等于或低于200MPa的范围内，而在室温下，在等于或高于-400MPa至等于或低于50MPa的范围内 MPa。

94. 发明申请

US20110042667A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110042667A1
公开(公告)日：2011-02-24
申请号：US12838451
申请日：2010-07-17
申请人： Tetsufumi KAWAMURA , Hiroyuki Uchiyama , Hironori Wakana , Mutsuko Hatano , Takeshi Sato
发明人： Tetsufumi KAWAMURA , Hiroyuki Uchiyama , Hironori Wakana , Mutsuko Hatano , Takeshi Sato
IPC分类号： H01L29/24 , H01L21/34
CPC分类号： H01L29/7869
摘要： A method for manufacturing a thin film transistor (TFT) through a process including back exposure, in which oxide semiconductor is used for a channel layer; using an electrode over a substrate as a mask, negative resist is exposed to light from the back of the substrate; the negative resist except its exposed part is removed; and an electrode is shaped by etching a conductive film using the exposed part as an etching mask.
摘要翻译：一种通过包括反向曝光的工艺制造薄膜晶体管（TFT）的方法，其中将氧化物半导体用于沟道层; 使用基板上的电极作为掩模，负光刻胶从基板的背面暴露于光; 去除其外露部分的负光刻胶; 并且通过使用暴露部分作为蚀刻掩模蚀刻导电膜来成形电极。

95. 发明授权

US07755142B2 Thin-film transistor and image display device 有权
标题翻译：薄膜晶体管和图像显示装置
公开(公告)号：US07755142B2
公开(公告)日：2010-07-13
申请号：US11761930
申请日：2007-06-12
申请人： Mieko Matsumura , Mutsuko Hatano , Mitsuhide Miyamoto
发明人： Mieko Matsumura , Mutsuko Hatano , Mitsuhide Miyamoto
IPC分类号： H01L27/01
CPC分类号： H01L29/78612 , H01L27/12 , H01L29/42384
摘要： In either of a source side and a drain side of an insular semiconductor thin film, a gate electrode is extended without a break along the contour of the insular semiconductor thin film to provide a branch closed circuit, thereby removing a current component path to server as a sub-channel in the edge of the insular semiconductor thin film, in order to eliminate current components due to the concentration of a gate electric field in silicon thin-film edges occurring in edges of an insular semiconductor thin film of top gate type thin-film transistors and a shift of threshold due to fixed charges in the periphery of the silicon thin-file edges.
摘要翻译：在岛状半导体薄膜的源极侧和漏极侧的任意一个中，栅电极沿着半导体薄膜的轮廓延伸而不发生断裂，从而提供分支闭合电路，从而将作为电流分量路径的电流消除为服务器，作为在岛状半导体薄膜的边缘的子通道中，为了消除由顶栅型薄膜的半导体薄膜的边缘出现的硅薄膜边缘中的栅极电场的集中而导致的电流成分，薄膜晶体管和由于硅薄文件边缘的外围的固定电荷引起的阈值偏移。

96. 发明申请

US20090015760A1 Method for manufacturing thin film transistors 有权
标题翻译：制造薄膜晶体管的方法
公开(公告)号：US20090015760A1
公开(公告)日：2009-01-15
申请号：US12216445
申请日：2008-07-03
申请人： Takashi Hattori , Mutsuko Hatano
发明人： Takashi Hattori , Mutsuko Hatano
IPC分类号： G02F1/1333 , H01L33/00
CPC分类号： H01L27/1266 , G02F1/133305 , H01L27/1214 , H01L27/1218 , H01L29/78603
摘要： A method for manufacturing a thin film transistor including a step of forming a polymer film (a) to a layer above a support substrate, a step of forming a semiconductor element above the polymer film (a), and a step of separating the support substrate from the polymer film (a) formed with the semiconductor element in which the polymer film (a) has a thickness of 1 μm or more and 30 μm or less, a transmittance of 80% or higher to a visible light at a wavelength of 400 nm or more and 800 nm or less, a 3 wt % loss temperature of 300° C. or higher, and a melting point of 280° C. or higher.
摘要翻译：一种制造薄膜晶体管的方法，包括在支撑基板上形成聚合物膜（a）的步骤，在聚合物膜（a）上方形成半导体元件的步骤，以及分离支撑基板从聚合物膜（a）的厚度为1μm以上至30μm以下的半导体元件形成的聚合物膜（a）的透过率为400以下的可见光的透射率为80％以上以上且800nm以下，3重量％的损失温度为300℃以上，熔点为280℃以上。

97. 发明授权

US07442958B2 Thin film semiconductor device 有权
标题翻译：薄膜半导体器件
公开(公告)号：US07442958B2
公开(公告)日：2008-10-28
申请号：US11768588
申请日：2007-06-26
申请人： Shinya Yamaguchi , Mutsuko Hatano , Mitsuharu Tai , Sedng-Kee Park , Takeo Shiba
发明人： Shinya Yamaguchi , Mutsuko Hatano , Mitsuharu Tai , Sedng-Kee Park , Takeo Shiba
IPC分类号： H01L29/76
CPC分类号： H01L27/1285 , H01L21/02422 , H01L21/02532 , H01L21/02595 , H01L21/02609 , H01L21/02675 , H01L21/02691 , H01L27/1296 , H01L29/04 , H01L29/66757 , H01L29/78675
摘要： A thin film semiconductor device is provided which includes an insulating substrate, a Si thin film formed over the insulating substrate, and a transistor with the Si thin film as a channel thereof. The Si thin film includes a polycrystal where a plurality of narrow, rectangular crystal grains are arranged. A surface of the polycrystal is flat at grain boundaries thereof. Also, an average film thickness of the boundaries of crystals of the Si thin film ranges from 90 to 100% of an intra-grain average film thickness.
摘要翻译：提供一种薄膜半导体器件，其包括绝缘衬底，形成在绝缘衬底上的Si薄膜，以及具有Si薄膜作为其沟道的晶体管。 Si薄膜包括其中布置有多个窄的矩形晶粒的多晶体。多晶的表面在其晶界处是平坦的。此外，Si薄膜的晶体边界的平均膜厚度在晶粒内平均膜厚度的90〜100％的范围内。

98. 发明授权

US07384810B2 Image display device and method for manufacturing the same 有权
标题翻译：图像显示装置及其制造方法
公开(公告)号：US07384810B2
公开(公告)日：2008-06-10
申请号：US11441021
申请日：2006-05-26
申请人： Mitsuharu Tai , Mutsuko Hatano , Takeshi Sato , Seongkee Park , Kiyoshi Ouchi
发明人： Mitsuharu Tai , Mutsuko Hatano , Takeshi Sato , Seongkee Park , Kiyoshi Ouchi
IPC分类号： H01L21/00
CPC分类号： H01L21/02691 , H01L21/02675 , H01L21/2026 , H01L27/1285 , H01L27/1296 , Y10S438/949
摘要： Only a region where TFTs constituting a high-performance circuit will be disposed in a precursor semiconductor film PCS on an insulating substrate GLS with an insulating layer UCL serving as an undercoat is irradiated with a first energy beam LSR so as to be poly-crystallized while growing crystal grains laterally. Further a second rapid thermal treatment is performed all over the panel so as to reduce defects in the crystal grains in a region PSI poly-crystallized by the aforementioned energy beam. Thus, a high-quality polycrystalline semiconductor thin film serving as TFTs for a high-performance circuit and having a high on-current, a low threshold value, a low variation and a sharp leading edge characteristic is obtained. Concurrently, the precursor semiconductor layer in the other region is poly-crystallized by the second rapid thermal treatment so as to obtain a low-quality polycrystalline semiconductor thin film serving as pixel circuit TFTs and having a low on-current and properties of a low leak current and a high withstand voltage due to its high resistance. Accordingly, it is possible to form polycrystalline semiconductor TFTs high in driving performance and TFTs having properties of a low leak current and a high withstand voltage concurrently on one and the same insulating substrate.
摘要翻译：用作为底涂层的绝缘层UCL的绝缘基板GLS上的前体半导体膜PCS中，仅配置构成高性能电路的TFT的区域，用第一能量束LSR照射多晶化，横向生长晶粒。此外，在整个面板上进行第二快速热处理，以便减少通过上述能量束多晶化的区域PSI中的晶粒的缺陷。因此，获得了用作高性能电路的TFT并具有高导通电流，低阈值，低变化和尖锐前沿特性的高质量多晶半导体薄膜。同时，通过第二快速热处理，另一区域中的前体半导体层被多晶化，以获得用作像素电路TFT的低品质多晶半导体薄膜，并且具有低导通电流和低泄漏性由于其高电阻，电流和高耐压。因此，可以在同一绝缘基板上同时形成具有高驱动性能的多晶半导体TFT和具有低漏电流和高耐受电压的特性的TFT。

99. 发明授权

US07326623B2 Method of manufacturing display device 有权
标题翻译：显示装置的制造方法
公开(公告)号：US07326623B2
公开(公告)日：2008-02-05
申请号：US11209742
申请日：2005-08-24
申请人： Mikio Hongo , Sachio Uto , Mineo Nomoto , Toshihiko Nakata , Mutsuko Hatano , Shinya Yamaguchi , Makoto Ohkura
发明人： Mikio Hongo , Sachio Uto , Mineo Nomoto , Toshihiko Nakata , Mutsuko Hatano , Shinya Yamaguchi , Makoto Ohkura
IPC分类号： H01L21/336 , H01L23/58
CPC分类号： H01L29/04 , B23K26/0622 , B23K26/064 , B23K26/0648 , B23K26/066 , B23K26/0665 , B23K26/0732 , H01L21/02422 , H01L21/02532 , H01L21/02678 , H01L21/02683 , H01L21/268 , H01L27/1285 , H01L27/1296 , H01L29/66757 , H01L29/78675
摘要： Arrangements (e.g., methods) for manufacturing a display device, including irradiating an amorphous semiconductor film formed on a substrate with an excimer laser beam to convert the amorphous semiconductor film into a polycrystalline semiconductor film; and irradiating predetermined areas of the polycrystalline semiconductor film intermittently with a continuous wave laser beam while a position of the substrate with respect to the continuous wave laser beam is scanned, crystal grains larger than those of the polycrystalline semiconductor film other than the predetermined areas are formed in each of the predetermined areas locally in the polycrystalline semiconductor film, wherein first thin film transistors are formed in the predetermined areas while second thin film transistors are formed in the polycrystalline semiconductor film other than the predetermined areas thereof.
摘要翻译：包括用于制造显示装置的布置（例如，方法），包括用准分子激光束照射形成在衬底上的非晶半导体膜，以将非晶半导体膜转换为多晶半导体膜; 并且在扫描基板相对于连续波激光束的位置时，用连续波激光束间歇地照射多晶半导体膜的预定区域，形成比除了预定区域以外的多晶半导体膜的晶粒大的晶粒在多晶半导体膜中局部的每个预定区域中，其中第一薄膜晶体管形成在预定区域中，而第二薄膜晶体管形成在除了其预定区域之外的多晶半导体膜中。

100. 发明授权

US07256423B2 Thin film semiconductor device 有权
标题翻译：薄膜半导体器件
公开(公告)号：US07256423B2
公开(公告)日：2007-08-14
申请号：US11186907
申请日：2005-07-22
申请人： Shinya Yamaguchi , Mutsuko Hatano , Mitsuharu Tai , Sedng-Kee Park , Takeo Shiba
发明人： Shinya Yamaguchi , Mutsuko Hatano , Mitsuharu Tai , Sedng-Kee Park , Takeo Shiba
IPC分类号： H01L29/10
CPC分类号： H01L27/1285 , H01L21/02422 , H01L21/02532 , H01L21/02595 , H01L21/02609 , H01L21/02675 , H01L21/02691 , H01L27/1296 , H01L29/04 , H01L29/66757 , H01L29/78675
摘要： A thin film semiconductor device which includes an insulating substrate, a semiconductor polycrystal thin film formed over the substrate and a transistor with the thin film as a channel. The polycrystal includes a plurality of crystal grains, with grain boundaries between the crystal grains being recessed. The grain boundaries with the recessed surfaces are the most predominant of all grain boundaries within the channel. With this structure, the polycrystal can be a low temperature polycrystal that can be formed at a temperature of 150° C. or less, thereby achieving a low-cost device with high carrier mobility.
摘要翻译：一种薄膜半导体器件，其包括绝缘衬底，形成在衬底上的半导体多晶体薄膜和具有薄膜作为沟道的晶体管。多晶体包括多个晶粒，晶粒之间的晶界是凹陷的。具有凹陷表面的晶界是通道内所有晶界的最主要的。利用该结构，多晶体可以是能够在150℃以下的温度下形成的低温多晶体，从而实现具有高载流子迁移率的低成本器件。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式