专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

91. 发明授权

US06878629B1 Method for detecting CMP endpoint in acidic slurries 失效
标题翻译：在酸性浆液中检测CMP终点的方法
公开(公告)号：US06878629B1
公开(公告)日：2005-04-12
申请号：US10185818
申请日：2002-06-27
申请人： Leping Li , Steven G. Barbee , Scott R. Cline , James A. Gilhooly , Xinhui Wang , Cong Wei
发明人： Leping Li , Steven G. Barbee , Scott R. Cline , James A. Gilhooly , Xinhui Wang , Cong Wei
IPC分类号： B24B37/005 , B24B37/013 , H01L21/302 , H01L21/304 , H01L21/3105
CPC分类号： B24B37/013 , B24B37/0056 , H01L21/31053
摘要： An apparatus for measuring ammonia gas concentration in an ongoing mechanical polishing (CMP) cycle utilizing an acidic CMP slurry, having the following components: a. A transferring means to collect a sample of the acidic CMP slurry; b. A converting means to convert the acidic CMP slurry to a basic slurry; c. A measuring means to measure the ammonia gas present in the basic slurry; d. A detection means to signal the end of an ongoing CMP cycle.
摘要翻译：一种利用酸性CMP浆料在正在进行的机械抛光（CMP）循环中测量氨气浓度的装置，具有以下组分：a。用于收集酸性CMP浆料样品的转移装置; b。 A转化装置将酸性CMP浆料转化成碱性浆料; c。测量基本浆料中存在的氨气的测量方法; d。检测装置，用于指示正在进行的CMP周期的结束。

92. 发明授权

US06419785B1 Endpoint detection by chemical reaction 有权
标题翻译：通过化学反应进行端点检测
公开(公告)号：US06419785B1
公开(公告)日：2002-07-16
申请号：US09678633
申请日：2000-10-03
申请人： Leping Li , James Albert Gilhooly , Clifford Owen Morgan, III , Cong Wei , Chienfan Yu
发明人： Leping Li , James Albert Gilhooly , Clifford Owen Morgan, III , Cong Wei , Chienfan Yu
IPC分类号： C23F102
CPC分类号： B24B37/30 , B24B37/013 , H01L21/31053
摘要： Detection of the endpoint for removal of a target film overlying a stopping film by removing the target film with a process that selectively generates a chemical reaction product (for example, ammonia when polishing a wafer with a nitride film in a slurry containing KOH) with either the target or stopping film, and monitoring the level of chemical reaction product as the target film is removed. The reaction product is extracted as a gas from the slurry and monitored using a threshold photoionization mass spectrometer.
摘要翻译：通过用选择性地产生化学反应产物的方法（例如，用含有KOH的浆料中的氮化物膜研磨晶片的氨），通过用任一种方法选择性地生成化学反应产物的方法（例如，氨）目标或停止膜，并且在去除靶膜时监测化学反应产物的水平。反应产物从浆液中提取为气体，并使用阈值光电离质谱仪进行监测。

93. 发明授权

US06291351B1 Endpoint detection in chemical-mechanical polishing of cloisonne structures 失效
标题翻译：化妆机械抛光景泰蓝结构的端点检测
公开(公告)号：US06291351B1
公开(公告)日：2001-09-18
申请号：US09605729
申请日：2000-06-28
申请人： Leping Li , Steven George Barbee , Eric James Lee , Francisco A. Martin , Cong Wei
发明人： Leping Li , Steven George Barbee , Eric James Lee , Francisco A. Martin , Cong Wei
IPC分类号： H01L21302
CPC分类号： B24B37/013 , B24B37/042 , B24B49/12 , G11B5/3116 , G11B5/3163
摘要： A method is described for fabricating a cloisonné structure, in which a top surface of a metal oxide layer is made coplanar with a top surface of a metallic structure formed on a substrate. A nitride layer is deposited on at least the top surface of the metallic structure, and the metal oxide layer is deposited over the metallic structure and the nitride layer. The metal oxide layer is then polished by a chemical-mechanical polishing (CMP) process using a slurry, to expose the nitride layer on the top surface of the metallic structure. Polishing of the nitride layer causes ammonia to be generated in the slurry. The ammonia is extracted as a gas from the slurry, and a signal is generated in accordance with the ammonia concentration. The CMP process is terminated in accordance with a change in the signal. In a preferred embodiment, the metal oxide is aluminum oxide, the nitride is aluminum nitride, and the nitride layer is deposited as a conformal layer on the substrate and the metallic structure.
摘要翻译：描述了一种用于制造景泰蓝结构的方法，其中金属氧化物层的顶表面与形成在基底上的金属结构的顶表面共面。氮化物层沉积在金属结构的至少顶表面上，金属氧化物层沉积在金属结构和氮化物层上。然后通过使用浆料的化学机械抛光（CMP）工艺来抛光金属氧化物层，以暴露金属结构的顶表面上的氮化物层。氮化物层的抛光在浆料中产生氨。从浆液中提取氨作为气体，根据氨浓度产生信号。 CMP过程根据信号的变化而终止。在优选的实施方案中，金属氧化物是氧化铝，氮化物是氮化铝，氮化物层作为保形层沉积在衬底和金属结构上。

94. 发明授权

US06213846B1 Real-time control of chemical-mechanical polishing processes using a shaft distortion measurement 失效
标题翻译：使用轴失真测量实时控制化学机械抛光工艺
公开(公告)号：US06213846B1
公开(公告)日：2001-04-10
申请号：US09351436
申请日：1999-07-12
申请人： Leping Li , Xinhui Wang
发明人： Leping Li , Xinhui Wang
IPC分类号： B24B4900
CPC分类号： B24B37/013 , B24B49/16
摘要： A method is provided for detecting the endpoint of a film removal process such as chemical-mechanical polishing (CMP). The process uses a device having a shaft, and friction in the film removal causes torque on the shaft. Two axially displaced reflecting portions are provided on the shaft. Light reflected from these portions generates first and second reflected signals, respectively. A phase difference between the reflected signals is detected, and an output signal is generated in accordance therewith. A change in the output signal indicates a change in deformation of the shaft resulting from change in the torque, thereby indicating the endpoint of the film removal process.
摘要翻译：提供了用于检测诸如化学机械抛光（CMP）的膜去除过程的终点的方法。该方法使用具有轴的装置，并且膜去除中的摩擦导致轴上的扭矩。两个轴向位移的反射部分设置在轴上。从这些部分反射的光分别产生第一和第二反射信号。检测反射信号之间的相位差，并根据其产生输出信号。输出信号的变化表示由转矩变化引起的轴的变形的变化，由此表示膜去除过程的终点。

95. 发明授权

US6126848A Indirect endpoint detection by chemical reaction and chemiluminescence 失效
公开(公告)号：US6126848A
公开(公告)日：2000-10-03
申请号：US073604
申请日：1998-05-06
申请人： Leping Li , James Albert Gilhooly , Clifford Owen Morgan, III , William Joseph Surovic , Cong Wei
发明人： Leping Li , James Albert Gilhooly , Clifford Owen Morgan, III , William Joseph Surovic , Cong Wei
IPC分类号： B24B37/013 , B24B49/12 , G01N21/76 , H01L21/306 , G01N21/00
CPC分类号： B24B37/013 , B24B49/12 , G01N21/766 , H01L21/30625 , Y10T436/175383
摘要： Detection of the endpoint for removal of a target film overlying a stopping film by removing the target film with a process that selectively generates a chemical reaction product (for example ammonia when polishing a wafer with a nitride film in a slurry containing KOH) with one of the stopping film and the target film, converting the chemical reaction product to a separate product, producing excited molecules from the separate product, and monitoring the level of light emitted from the excited molecules as the target film is removed.

96. 发明授权

US6046171A 6,11-bridged erythromycin derivatives 有权
标题翻译： 6,11桥梁红霉素衍生物
公开(公告)号：US6046171A
公开(公告)日：2000-04-04
申请号：US158459
申请日：1998-09-22
申请人： Yat Sun Or , George Griesgraber , Leping Li , Daniel T. Chu
发明人： Yat Sun Or , George Griesgraber , Leping Li , Daniel T. Chu
IPC分类号： C07H17/08 , A61K31/70 , C07H1/00
CPC分类号： C07H17/08
摘要： Novel 6,11-bridged erythromycin compounds and pharmaceutically acceptable salts and esters thereof having antibacterial activity having a formula ##STR1## compositions comprising a therapeutically effective amount of a compound of the invention in combination with a pharmaceutically acceptable carrier, a method for treating bacterial infections by administering to a mammal a pharmaceutical composition containing a therapeutically-effective amount of a compound of the invention, and processes for their preparation.
摘要翻译：具有抗细菌活性的新型6,11-桥接的红霉素化合物及其药学上可接受的盐和酯，其组成包括治疗有效量的本发明化合物与药学上可接受的载体的组合，通过给予哺乳动物含有治疗有效量的本发明化合物的药物组合物及其制备方法。

97. 发明授权

US5770948A Rotary signal coupling for chemical mechanical polishing endpoint detection with a strasbaugh tool 失效
标题翻译：旋转信号耦合用于化学机械抛光终点检测与strasbaugh工具
公开(公告)号：US5770948A
公开(公告)日：1998-06-23
申请号：US620723
申请日：1996-03-19
申请人： Leping Li , Steven George Barbee , Arnold Halperin , Richard Mars Ruggiero , William Joseph Surovie
发明人： Leping Li , Steven George Barbee , Arnold Halperin , Richard Mars Ruggiero , William Joseph Surovie
IPC分类号： B24B37/013 , B24B37/24 , B24B37/26 , G01B7/06 , H01L21/302
CPC分类号： B24B37/013 , B24B37/245 , B24B37/26 , B24B49/12 , G01B7/06
摘要： An apparatus for rotary signal coupling in in-situ monitoring of a chemical-mechanical polishing process by a polisher is provided with a sensor fixed to a rotatable wafer carrier for creating a signal responsive to the chemical mechanical polishing process, a conductor coupled to the sensor for receiving the signal, the conductor fixed to the rotatable wafer carrier, a contact coupled to the conductor, the contact fixed to a stationary drive arm, and signal transfer means coupled to the contact for transferring the signal to a monitoring means.
摘要翻译：用于通过抛光机原位监测化学机械抛光工艺的旋转信号耦合装置设置有固定到可旋转晶片载体的传感器，用于产生响应于化学机械抛光工艺的信号，耦合到传感器的导体为了接收信号，固定到可旋转晶片载体的导体，耦合到导体的触点，固定到固定驱动臂的触点和耦合到触点的信号传送装置，用于将信号传送到监视装置。

98. 发明授权

US5660672A In-situ monitoring of conductive films on semiconductor wafers 失效
标题翻译：半导体晶片导电膜的原位监测
公开(公告)号：US5660672A
公开(公告)日：1997-08-26
申请号：US419208
申请日：1995-04-10
申请人： Leping Li , Steven George Barbee , Arnold Halperin , Tony Frederick Heinz
发明人： Leping Li , Steven George Barbee , Arnold Halperin , Tony Frederick Heinz
IPC分类号： G01B7/00 , G01B7/06 , G01R31/26 , H01L21/302 , H01L21/3205 , H01L21/66
CPC分类号： G01B7/105
摘要： The change in thickness of a film on an underlying body such as a semiconductor substrate is monitored in situ by inducing a current in the film, and as the thickness of the film changes (either increase or decrease), the changes in the current are detected. With a conductive film, eddy currents are induced in the film by a generating an alternating electromagnetic field with a sensor which includes a capacitor and an inductor.
摘要翻译：通过在膜中感应电流来原位监测半导体衬底等底层上的膜的厚度变化，随着膜的厚度变化（增加或减小），检测电流的变化。利用导电膜，通过与包括电容器和电感器的传感器产生交变电磁场，在膜中引起涡流。

99. 发明授权

US5582746A Real time measurement of etch rate during a chemical etching process 失效
公开(公告)号：US5582746A
公开(公告)日：1996-12-10
申请号：US269862
申请日：1994-06-30
申请人： Steven G. Barbee , Tony F. Heinz , Yiping Hsiao , Leping Li , Eugene H. Ratzlaff , Justin W. Wong
发明人： Steven G. Barbee , Tony F. Heinz , Yiping Hsiao , Leping Li , Eugene H. Ratzlaff , Justin W. Wong
IPC分类号： C23F1/00 , G01N17/00 , G01N27/02 , G01N29/34 , G01N29/42 , G03F7/30 , H01L21/306 , H01L21/66
CPC分类号： B24B37/013 , G01N29/348 , G01N29/42 , G03F7/3028 , H01L22/26 , G01N2291/0231 , G01N2291/2694 , H01L2924/0002
摘要： A contactless method and apparatus for real-time in-situ monitoring of a chemical etching process during etching of at least one wafer in a wet chemical etchant bath are disclosed. The method comprises the steps of providing two conductive electrodes in the wet chemical bath, wherein the two electrodes are proximate to but not in contact with a wafer; monitoring an electrical characteristic between the two electrodes as a function of time in the etchant bath of the at least one wafer, wherein a prescribed change in the electrical characteristic is indicative of a prescribed condition of the etching process; and recording a plurality of values of the electrical characteristic as a function of time during etching. From the plurality of recorded values and corresponding times, instantaneous etch rates, average etch rates, and etching end points may be determined. Such a method and the apparatus therefor are particularly useful in a wet chemical etch station.

100. 发明授权

US5573624A Chemical etch monitor for measuring film etching uniformity during a chemical etching process 失效
标题翻译：用于在化学蚀刻过程中测量膜蚀刻均匀性的化学蚀刻监测器
公开(公告)号：US5573624A
公开(公告)日：1996-11-12
申请号：US269861
申请日：1994-06-30
申请人： Steven G. Barbee , Tony F. Heinz , Yiping Hsiao , Leping Li , Eugene H. Ratzlaff , Justin W. Wong
发明人： Steven G. Barbee , Tony F. Heinz , Yiping Hsiao , Leping Li , Eugene H. Ratzlaff , Justin W. Wong
IPC分类号： G01N17/00 , G01N27/02 , G01N29/34 , G01N29/42 , G03F7/30 , H01L21/66 , C23F1/02
CPC分类号： B24B37/013 , G01N29/348 , G01N29/42 , G03F7/3028 , H01L22/26 , G01N2291/0231 , G01N2291/2694 , H01L2924/0002
摘要： A contactless method and apparatus for real-time in-situ monitoring of a chemical etching process during etching of at least one wafer in a wet chemical etchant bath are disclosed. The method comprises the steps of providing two conductive electrodes in the wet chemical bath, wherein the two electrodes are proximate to but not in contact with a wafer; monitoring an electrical characteristic between the two electrodes as a function of time in the etchant bath of the at least one wafer, wherein a prescribed change in the electrical characteristic is indicative of a prescribed condition of the etching process; detecting a minimum and maximum value of the electrical characteristic during etching; determining the times of the minimum and maximum values; and comparing the times of the minimum and maximum values to determine a film etching uniformity value. Such a method and the apparatus therefor are particularly useful in a wet chemical etch station, and are useful for film deposition process quality control.
摘要翻译：公开了一种用于在湿式化学蚀刻剂浴中蚀刻至少一个晶片期间对化学蚀刻工艺进行实时原位监测的非接触式方法和装置。该方法包括以下步骤：在湿化学浴中提供两个导电电极，其中两个电极接近但不与晶片接触; 在所述至少一个晶片的蚀刻液浴中监测所述两个电极之间的电特性作为时间的函数，其中所述电特性的规定变化表示所述蚀刻工艺的规定条件; 检测蚀刻期间的电特性的最小值和最大值; 确定最小和最大值的时间; 并比较最小和最大值的时间以确定膜蚀刻均匀度值。这种方法及其装置在湿化学蚀刻站中特别有用，并且可用于膜沉积工艺质量控制。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式