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1. 发明授权

US5501766A Minimizing overetch during a chemical etching process 失效
标题翻译：在化学蚀刻过程中最小化过蚀刻
公开(公告)号：US5501766A
公开(公告)日：1996-03-26
申请号：US269864
申请日：1994-06-30
申请人： Steven G. Barbee , Tony F. Heinz , Yiping Hsiao , Leping Li , Eugene H. Ratzlaff , Justin W. Wong
发明人： Steven G. Barbee , Tony F. Heinz , Yiping Hsiao , Leping Li , Eugene H. Ratzlaff , Justin W. Wong
IPC分类号： G01N27/02 , G01N27/46 , H01L21/00
CPC分类号： G01N27/02
摘要： A contactless method and apparatus for real-time in-situ monitoring of a chemical etching process to minimize overetch of at least one wafer in a wet chemical etchant bath are disclosed. The method comprises the steps of providing two conductive electrodes in the wet chemical bath, wherein the two electrodes are proximate to but not in contact with a wafer; monitoring an electrical characteristic between the two electrodes as a function of time in the etchant bath of the at least one wafer, wherein a prescribed change in the electrical characteristic is indicative of a prescribed condition of the etching process; detecting a minimum and maximum value of the electrical characteristic during etching; determining the times of the minimum and maximum values; and comparing the times of the minimum and maximum values to determine an overetch value. The overetch value may be compared to a desired value to control the etching process. Such a method and the apparatus therefor are particularly useful in a wet chemical etch station.
摘要翻译：公开了一种用于实时地原位监测化学蚀刻工艺的非接触式方法和装置，以使湿化学蚀刻剂浴中的至少一个晶片的过蚀刻最小化。该方法包括以下步骤：在湿化学浴中提供两个导电电极，其中两个电极接近但不与晶片接触; 在所述至少一个晶片的蚀刻液浴中监测所述两个电极之间的电特性作为时间的函数，其中所述电特性的规定变化表示所述蚀刻工艺的规定条件; 检测蚀刻期间的电特性的最小值和最大值; 确定最小和最大值的时间; 并比较最小值和最大值的时间以确定过蚀值。将过蚀刻值与期望值进行比较以控制蚀刻工艺。这种方法及其装置在湿化学蚀刻站中特别有用。

2. 发明授权

US5489361A Measuring film etching uniformity during a chemical etching process 失效
标题翻译：在化学蚀刻过程中测量膜蚀刻均匀性
公开(公告)号：US5489361A
公开(公告)日：1996-02-06
申请号：US354567
申请日：1994-12-13
申请人： Steven G. Barbee , Tony F. Heinz , Yiping Hsiao , Leping Li , Eugene H. Ratzlaff , Justin W. Wong
发明人： Steven G. Barbee , Tony F. Heinz , Yiping Hsiao , Leping Li , Eugene H. Ratzlaff , Justin W. Wong
IPC分类号： G01N29/34 , G01N29/42 , G03F7/30 , H01L21/66 , H01L21/00
CPC分类号： B24B37/013 , G01N29/348 , G01N29/42 , G03F7/3028 , H01L22/26 , G01N2291/0231 , G01N2291/2694 , H01L2924/0002
摘要： A contactless method and apparatus for real-time in-situ monitoring of a chemical etching process during etching of at least one wafer in a wet chemical etchant bath are disclosed. The method comprises the steps of providing two conductive electrodes in the wet chemical bath, wherein the two electrodes are proximate to but not in contact with a wafer; monitoring an electrical characteristic between the two electrodes as a function of time in the etchant bath of the at least one wafer, wherein a prescribed change in the electrical characteristic is indicative of a prescribed condition of the etching process; detecting a minimum and maximum value of the electrical characteristic during etching; determining the times of the minimum and maximum values; and comparing the times of the minimum and maximum values to determine a film etching uniformity value. Such a method and the apparatus therefor are particularly useful in a wet chemical etch station, and are useful for film deposition process quality control.
摘要翻译：公开了一种用于在湿式化学蚀刻剂浴中蚀刻至少一个晶片期间对化学蚀刻工艺进行实时原位监测的非接触式方法和装置。该方法包括以下步骤：在湿化学浴中提供两个导电电极，其中两个电极接近但不与晶片接触; 在所述至少一个晶片的蚀刻液浴中监测所述两个电极之间的电特性作为时间的函数，其中所述电特性的规定变化表示所述蚀刻工艺的规定条件; 检测蚀刻期间的电特性的最小值和最大值; 确定最小和最大值的时间; 并比较最小和最大值的时间以确定膜蚀刻均匀度值。这种方法及其装置在湿化学蚀刻站中特别有用，并且可用于膜沉积工艺质量控制。

3. 发明授权

US5582746A Real time measurement of etch rate during a chemical etching process 失效
公开(公告)号：US5582746A
公开(公告)日：1996-12-10
申请号：US269862
申请日：1994-06-30
申请人： Steven G. Barbee , Tony F. Heinz , Yiping Hsiao , Leping Li , Eugene H. Ratzlaff , Justin W. Wong
发明人： Steven G. Barbee , Tony F. Heinz , Yiping Hsiao , Leping Li , Eugene H. Ratzlaff , Justin W. Wong
IPC分类号： C23F1/00 , G01N17/00 , G01N27/02 , G01N29/34 , G01N29/42 , G03F7/30 , H01L21/306 , H01L21/66
CPC分类号： B24B37/013 , G01N29/348 , G01N29/42 , G03F7/3028 , H01L22/26 , G01N2291/0231 , G01N2291/2694 , H01L2924/0002
摘要： A contactless method and apparatus for real-time in-situ monitoring of a chemical etching process during etching of at least one wafer in a wet chemical etchant bath are disclosed. The method comprises the steps of providing two conductive electrodes in the wet chemical bath, wherein the two electrodes are proximate to but not in contact with a wafer; monitoring an electrical characteristic between the two electrodes as a function of time in the etchant bath of the at least one wafer, wherein a prescribed change in the electrical characteristic is indicative of a prescribed condition of the etching process; and recording a plurality of values of the electrical characteristic as a function of time during etching. From the plurality of recorded values and corresponding times, instantaneous etch rates, average etch rates, and etching end points may be determined. Such a method and the apparatus therefor are particularly useful in a wet chemical etch station.

4. 发明授权

US5573624A Chemical etch monitor for measuring film etching uniformity during a chemical etching process 失效
标题翻译：用于在化学蚀刻过程中测量膜蚀刻均匀性的化学蚀刻监测器
公开(公告)号：US5573624A
公开(公告)日：1996-11-12
申请号：US269861
申请日：1994-06-30
申请人： Steven G. Barbee , Tony F. Heinz , Yiping Hsiao , Leping Li , Eugene H. Ratzlaff , Justin W. Wong
发明人： Steven G. Barbee , Tony F. Heinz , Yiping Hsiao , Leping Li , Eugene H. Ratzlaff , Justin W. Wong
IPC分类号： G01N17/00 , G01N27/02 , G01N29/34 , G01N29/42 , G03F7/30 , H01L21/66 , C23F1/02
CPC分类号： B24B37/013 , G01N29/348 , G01N29/42 , G03F7/3028 , H01L22/26 , G01N2291/0231 , G01N2291/2694 , H01L2924/0002
摘要： A contactless method and apparatus for real-time in-situ monitoring of a chemical etching process during etching of at least one wafer in a wet chemical etchant bath are disclosed. The method comprises the steps of providing two conductive electrodes in the wet chemical bath, wherein the two electrodes are proximate to but not in contact with a wafer; monitoring an electrical characteristic between the two electrodes as a function of time in the etchant bath of the at least one wafer, wherein a prescribed change in the electrical characteristic is indicative of a prescribed condition of the etching process; detecting a minimum and maximum value of the electrical characteristic during etching; determining the times of the minimum and maximum values; and comparing the times of the minimum and maximum values to determine a film etching uniformity value. Such a method and the apparatus therefor are particularly useful in a wet chemical etch station, and are useful for film deposition process quality control.
摘要翻译：公开了一种用于在湿式化学蚀刻剂浴中蚀刻至少一个晶片期间对化学蚀刻工艺进行实时原位监测的非接触式方法和装置。该方法包括以下步骤：在湿化学浴中提供两个导电电极，其中两个电极接近但不与晶片接触; 在所述至少一个晶片的蚀刻液浴中监测所述两个电极之间的电特性作为时间的函数，其中所述电特性的规定变化表示所述蚀刻工艺的规定条件; 检测蚀刻期间的电特性的最小值和最大值; 确定最小和最大值的时间; 并比较最小和最大值的时间以确定膜蚀刻均匀度值。这种方法及其装置在湿化学蚀刻站中特别有用，并且可用于膜沉积工艺质量控制。

5. 发明授权

US5500073A Real time measurement of etch rate during a chemical etching process 失效
标题翻译：在化学蚀刻过程中实时测量蚀刻速率
公开(公告)号：US5500073A
公开(公告)日：1996-03-19
申请号：US435059
申请日：1995-05-08
申请人： Steven G. Barbee , Tony F. Heinz , Yiping Hsiao , Leping Li , Eugene H. Ratzlaff , Justin W. Wong
发明人： Steven G. Barbee , Tony F. Heinz , Yiping Hsiao , Leping Li , Eugene H. Ratzlaff , Justin W. Wong
IPC分类号： C23F1/00 , G01N17/00 , G01N27/02 , G01N29/34 , G01N29/42 , G03F7/30 , H01L21/306 , H01L21/66 , H01L21/00 , B44C1/22
CPC分类号： B24B37/013 , G01N29/348 , G01N29/42 , G03F7/3028 , H01L22/26 , G01N2291/0231 , G01N2291/2694 , H01L2924/0002
摘要： A contactless method and apparatus for real-time in-situ monitoring of a chemical etching process during etching of at least one wafer in a wet chemical etchant bath are disclosed. The method comprises the steps of providing two conductive electrodes in the wet chemical bath, wherein the two electrodes are proximate to but not in contact with a wafer; monitoring an electrical characteristic between the two electrodes as a function of time in the etchant bath of the at least one wafer, wherein a prescribed change in the electrical characteristic is indicative of a prescribed condition of the etching process; and recording a plurality of values of the electrical characteristic as a function of time during etching. From the plurality of recorded values and corresponding times, instantaneous etch rates, average etch rates, and etching end points may be determined. Such a method and the apparatus therefor are particularly useful in a wet chemical etch station.
摘要翻译：公开了一种用于在湿式化学蚀刻剂浴中蚀刻至少一个晶片期间对化学蚀刻工艺进行实时原位监测的非接触式方法和装置。该方法包括以下步骤：在湿化学浴中提供两个导电电极，其中两个电极接近但不与晶片接触; 在所述至少一个晶片的蚀刻液浴中监测所述两个电极之间的电特性作为时间的函数，其中所述电特性的规定变化表示所述蚀刻工艺的规定条件; 并且在蚀刻期间记录多个电特性值作为时间的函数。从多个记录值和对应的时间，可以确定瞬时蚀刻速率，平均蚀刻速率和蚀刻终点。这种方法及其装置在湿化学蚀刻站中特别有用。

6. 发明授权

US5516399A Contactless real-time in-situ monitoring of a chemical etching 失效
标题翻译：非接触式实时化学蚀刻实时监测
公开(公告)号：US5516399A
公开(公告)日：1996-05-14
申请号：US269863
申请日：1994-06-30
申请人： Michael J. Balconi-Lamica , Steven G. Barbee , Tony F. Heinz , Yiping Hsiao , Leping Li , Eugene H. Ratzlaff , Justin Wai-chow Wong
发明人： Michael J. Balconi-Lamica , Steven G. Barbee , Tony F. Heinz , Yiping Hsiao , Leping Li , Eugene H. Ratzlaff , Justin Wai-chow Wong
IPC分类号： G01N27/02 , H01L21/306 , H01L21/66 , H01L21/00
CPC分类号： B24B37/013 , H01L22/26 , H01L2924/0002
摘要： A contactless method and apparatus for real-time in-situ monitoring of a chemical etching process for the etching of at least one wafer in a wet chemical etchant bath are disclosed. The method comprises the steps of providing at least two conductive electrodes in the wet chemical bath, wherein the at least two electrodes are proximate to but not in contact with the at least one wafer, and further wherein said two electrodes are positioned on the same side of the wafer; and monitoring an electrical characteristic between the at least two electrodes, wherein a prescribed change in the electrical characteristic is indicative of a prescribed condition of the etching process. Such a method and apparatus are particularly useful in a wet chemical etch station.
摘要翻译：公开了一种用于在湿化学蚀刻剂浴中蚀刻至少一个晶片的化学蚀刻工艺的实时原位监测的非接触式方法和装置。该方法包括以下步骤：在湿化学浴中提供至少两个导电电极，其中所述至少两个电极接近但不与所述至少一个晶片接触，并且其中所述两个电极位于同一侧的晶片; 以及监测所述至少两个电极之间的电特性，其中所述电特性的规定变化指示所述蚀刻工艺的规定条件。这种方法和装置在湿化学蚀刻站中特别有用。

7. 发明授权

US5788801A Real time measurement of etch rate during a chemical etching process 失效
公开(公告)号：US5788801A
公开(公告)日：1998-08-04
申请号：US827437
申请日：1997-03-27
申请人： Steven George Barbee , Tony Frederick Heinz , Yiping Hsiao , Leping Li , Eugene Henry Ratzlaff , Justin Wai-chow Wong
发明人： Steven George Barbee , Tony Frederick Heinz , Yiping Hsiao , Leping Li , Eugene Henry Ratzlaff , Justin Wai-chow Wong
IPC分类号： G01N17/00 , G01N27/02 , H01L21/66 , G01N27/00
CPC分类号： B24B37/013 , H01L22/26
摘要： A contactless method and apparatus for real-time in-situ monitoring of a chemical etching process during etching of at least one wafer in a wet chemical etchant bath are disclosed. The method comprises the steps of providing two conductive electrodes in the wet chemical bath, wherein the two electrodes are proximate to but not in contact with a wafer; monitoring an electrical characteristic between the two electrodes as a function of time in the etchant bath of the at least one wafer, wherein a prescribed change in the electrical characteristic is indicative of a prescribed condition of the etching process; and recording a plurality of values of the electrical characteristic as a function of time during etching. From the plurality of recorded values and corresponding times, instantaneous etch rates, average etch rates, and etching end points may be determined. Such a method and the apparatus therefor are particularly useful in a wet chemical etch station.

8. 发明授权

US07137190B2 Method for fabricating a magnetic transducer with a corrosion resistant layer on metallic thin films by nitrogen exposure 失效
标题翻译：通过氮气曝光在金属薄膜上制造具有耐腐蚀层的磁换能器的方法
公开(公告)号：US07137190B2
公开(公告)日：2006-11-21
申请号：US10264663
申请日：2002-10-03
申请人： Yiping Hsiao , Cherngye Hwang , Jila Tabib
发明人： Yiping Hsiao , Cherngye Hwang , Jila Tabib
IPC分类号： G11B5/127 , H01R31/00
CPC分类号： G11B5/3169 , G11B5/102 , G11B5/1871 , G11B5/3106 , G11B5/3163 , G11B5/40 , Y10T29/49032 , Y10T29/49034 , Y10T29/49041 , Y10T29/49043 , Y10T29/49046 , Y10T29/49798
摘要： A process is described for fabricating magnetic transducers with metallic thin films with a corrosion resistant surface produced by exposing the thin films to a nitrogen in a plasma chamber. The exposure to the nitrogen is believed to increase the corrosion resistance of the metallic thin films by causing nitrides to form in a thin surface region. In the preferred embodiment the thin film metals of a magnetic transducer are treated with the nitrogen after being cut from the wafer and lapped. Typical metals used in magnetic transducers are NiMn, FeMn, NiFe, cobalt, CoFe, copper, IrMn and PtMn. The films may be further protected by the addition of prior art protective layers such as carbon.
摘要翻译：描述了一种用于制造具有金属薄膜的磁性换能器的方法，其具有通过将薄膜暴露于等离子体室中的氮而产生的耐腐蚀表面。认为暴露于氮气可以通过在较薄的表面区域形成氮化物来提高金属薄膜的耐腐蚀性。在优选实施例中，在从晶片切割并研磨之后，用氮气处理磁换能器的薄膜金属。在磁换能器中使用的典型金属是NiMn，FeMn，NiFe，钴，CoFe，铜，IrMn和PtMn。可以通过添加现有技术的保护层例如碳来进一步保护膜。

9. 发明授权

US06804878B1 Method of improving the reliability of magnetic head sensors by ion milling smoothing 失效
标题翻译：通过离子铣削平滑提高磁头传感器可靠性的方法
公开(公告)号：US06804878B1
公开(公告)日：2004-10-19
申请号：US09468603
申请日：1999-12-21
申请人： Richard Thomas Campbell , Richard Hsiao , Yiping Hsiao , Son Van Nguyen , Thao John Pham
发明人： Richard Thomas Campbell , Richard Hsiao , Yiping Hsiao , Son Van Nguyen , Thao John Pham
IPC分类号： G11B5112
CPC分类号： G11B5/6005 , G11B5/102 , G11B5/3106 , G11B5/3116 , G11B5/3163 , G11B5/3173 , G11B5/60 , Y10T29/49041 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A method is provided of smoothing the perturbations on a surface, in particular the surface of a magnetic head slider, the method comprising several steps. At least one air-bearing surface to be smoothed is exposed to an ion species generated from a defined source to form a beam of incident radiation. The beam has a linear axis emanating from the source and thus forms an angle of incident radiation with respect to the surface to be smoothed. The at least one surface is smoothed by exposing the surface(s) to be smoothed to the beam of incident radiation, where the angle of incident radiation is less than 90° relative to a vertical axis drawn perpendicular to the surface to be smoothed. To make a corrosion resistant magnetic head slider, the method further comprises coating the smoothed surface with a layer of amorphous carbon.
摘要翻译：提供了一种平滑表面上的扰动的方法，特别是磁头滑块的表面，该方法包括几个步骤。待平滑的至少一个空气轴承表面暴露于从限定的源产生的离子物质以形成入射辐射束。光束具有从光源发出的线性轴线，并且因此相对于待平滑的表面形成入射辐射角。通过将要平滑的表面暴露于入射辐射束来平滑所述至少一个表面，其中入射辐射角相对于垂直于待平滑表面绘制的垂直轴小于90°。为了制造耐腐蚀磁头滑块，该方法还包括用无定形碳层涂覆平滑的表面。

10. 发明授权

US06515826B1 Magnetic head induction coil fabrication method utilizing aspect ratio dependent etching 失效
标题翻译：磁头感应线圈制造方法利用纵横比依赖蚀刻
公开(公告)号：US06515826B1
公开(公告)日：2003-02-04
申请号：US09638665
申请日：2000-08-14
申请人： Richard Hsiao , Yiping Hsiao
发明人： Richard Hsiao , Yiping Hsiao
IPC分类号： G11B517
CPC分类号： G11B5/17 , G11B5/012 , G11B5/313 , G11B5/3163
摘要： A magnetic head including a dual layer induction coil. Following the deposition of a first magnetic pole (P1) a first induction coil is fabricated. Following a chemical mechanical polishing (CMP) step a layer of etchable insulation material is deposited followed by the fabrication of a second induction coil etching mask. A reactive ion etch process is then conducted to etch the second induction coil trenches into the second etchable insulation material layer. The etching depth is controlled by the width of the trenches in an aspect ratio dependent etching process step. The second induction coil is next fabricated into the second induction coil trenches, preferably utilizing electrodeposition techniques. Thereafter, an insulation layer is deposited upon the second induction coil, followed by the fabrication of a second magnetic pole (P2) upon the insulation layer.
摘要翻译：包括双层感应线圈的磁头。在沉积第一磁极（P1）之后，制造第一感应线圈。在化学机械抛光（CMP）步骤之后，沉积一层可蚀刻的绝缘材料，随后制造第二感应线圈蚀刻掩模。然后进行反应离子蚀刻工艺以将第二感应线圈沟槽蚀刻到第二可蚀刻绝缘材料层中。在纵横比依赖蚀刻工艺步骤中，蚀刻深度由沟槽的宽度控制。接下来，将第二感应线圈制造成第二感应线圈沟槽，优选利用电沉积技术。此后，在第二感应线圈上沉积绝缘层，随后在绝缘层上制造第二磁极（P2）。

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