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1. 发明授权

US06291351B1 Endpoint detection in chemical-mechanical polishing of cloisonne structures 失效
标题翻译：化妆机械抛光景泰蓝结构的端点检测
公开(公告)号：US06291351B1
公开(公告)日：2001-09-18
申请号：US09605729
申请日：2000-06-28
申请人： Leping Li , Steven George Barbee , Eric James Lee , Francisco A. Martin , Cong Wei
发明人： Leping Li , Steven George Barbee , Eric James Lee , Francisco A. Martin , Cong Wei
IPC分类号： H01L21302
CPC分类号： B24B37/013 , B24B37/042 , B24B49/12 , G11B5/3116 , G11B5/3163
摘要： A method is described for fabricating a cloisonné structure, in which a top surface of a metal oxide layer is made coplanar with a top surface of a metallic structure formed on a substrate. A nitride layer is deposited on at least the top surface of the metallic structure, and the metal oxide layer is deposited over the metallic structure and the nitride layer. The metal oxide layer is then polished by a chemical-mechanical polishing (CMP) process using a slurry, to expose the nitride layer on the top surface of the metallic structure. Polishing of the nitride layer causes ammonia to be generated in the slurry. The ammonia is extracted as a gas from the slurry, and a signal is generated in accordance with the ammonia concentration. The CMP process is terminated in accordance with a change in the signal. In a preferred embodiment, the metal oxide is aluminum oxide, the nitride is aluminum nitride, and the nitride layer is deposited as a conformal layer on the substrate and the metallic structure.
摘要翻译：描述了一种用于制造景泰蓝结构的方法，其中金属氧化物层的顶表面与形成在基底上的金属结构的顶表面共面。氮化物层沉积在金属结构的至少顶表面上，金属氧化物层沉积在金属结构和氮化物层上。然后通过使用浆料的化学机械抛光（CMP）工艺来抛光金属氧化物层，以暴露金属结构的顶表面上的氮化物层。氮化物层的抛光在浆料中产生氨。从浆液中提取氨作为气体，根据氨浓度产生信号。 CMP过程根据信号的变化而终止。在优选的实施方案中，金属氧化物是氧化铝，氮化物是氮化铝，氮化物层作为保形层沉积在衬底和金属结构上。

2. 发明授权

US5788801A Real time measurement of etch rate during a chemical etching process 失效
公开(公告)号：US5788801A
公开(公告)日：1998-08-04
申请号：US827437
申请日：1997-03-27
申请人： Steven George Barbee , Tony Frederick Heinz , Yiping Hsiao , Leping Li , Eugene Henry Ratzlaff , Justin Wai-chow Wong
发明人： Steven George Barbee , Tony Frederick Heinz , Yiping Hsiao , Leping Li , Eugene Henry Ratzlaff , Justin Wai-chow Wong
IPC分类号： G01N17/00 , G01N27/02 , H01L21/66 , G01N27/00
CPC分类号： B24B37/013 , H01L22/26
摘要： A contactless method and apparatus for real-time in-situ monitoring of a chemical etching process during etching of at least one wafer in a wet chemical etchant bath are disclosed. The method comprises the steps of providing two conductive electrodes in the wet chemical bath, wherein the two electrodes are proximate to but not in contact with a wafer; monitoring an electrical characteristic between the two electrodes as a function of time in the etchant bath of the at least one wafer, wherein a prescribed change in the electrical characteristic is indicative of a prescribed condition of the etching process; and recording a plurality of values of the electrical characteristic as a function of time during etching. From the plurality of recorded values and corresponding times, instantaneous etch rates, average etch rates, and etching end points may be determined. Such a method and the apparatus therefor are particularly useful in a wet chemical etch station.

3. 发明授权

US5663637A Rotary signal coupling for chemical mechanical polishing endpoint detection with a westech tool 失效
标题翻译：用于西化工具的化学机械抛光终点检测的旋转信号耦合
公开(公告)号：US5663637A
公开(公告)日：1997-09-02
申请号：US620720
申请日：1996-03-19
申请人： Leping Li , Steven George Barbee , Gary Richard Doyle , Arnold Halperin , Kevin L. Holland , Francis Walter Kazak , Robert B. Lipori , Anne Elizabeth McGuire , Rock Nadeau , William Joseph Surovic
发明人： Leping Li , Steven George Barbee , Gary Richard Doyle , Arnold Halperin , Kevin L. Holland , Francis Walter Kazak , Robert B. Lipori , Anne Elizabeth McGuire , Rock Nadeau , William Joseph Surovic
IPC分类号： B24B37/04 , B24B49/00 , H01L21/66 , G01R27/00
CPC分类号： B24B37/013 , B24B37/04 , B24B49/00 , H01L22/26 , H01L2924/0002
摘要： Rotary signal coupling in in-situ monitoring of a chemical-mechanical polishing process. A sensor fixed to a rotatable wafer carrier for creating a signal responsive to the chemical mechanical polishing process is coupled to a bottom half of a rotary transformer fixed to a rotating portion of the polisher. A top half of the rotary transformer, coupled to the bottom half of the rotary transformer, is fixed to a stationary portion of the polisher. The signal from the sensor is thus coupled through the rotary transformer to a process monitor.
摘要翻译：旋转信号耦合在原位监测化学机械抛光过程。固定到可旋转晶片载体上的用于产生响应于化学机械抛光工艺的信号的传感器耦合到固定到抛光机旋转部分的旋转变压器的下半部分。旋转变压器的上半部分，连接到旋转变压器的下半部分，固定在抛光机的静止部分。因此，来自传感器的信号通过旋转变压器耦合到过程监视器。

4. 发明授权

US5644221A Endpoint detection for chemical mechanical polishing using frequency or amplitude mode 失效
标题翻译：使用频率或振幅模式进行化学机械抛光的端点检测
公开(公告)号：US5644221A
公开(公告)日：1997-07-01
申请号：US620722
申请日：1996-03-19
申请人： Leping Li , Steven George Barbee , Arnold Halperin
发明人： Leping Li , Steven George Barbee , Arnold Halperin
IPC分类号： H01L21/304 , B24B37/04 , B24B49/02 , G01B7/06 , G01N27/00 , G01R27/00 , G01B27/00
CPC分类号： G01B7/105
摘要： A method and apparatus for endpoint detection in removal of a film from a semiconductor wafer is provided, with a sensor for creating a signal responsive to the film removal process, a positive feedback amplifier coupled to the sensor, the positive feedback amplifier having a mode selector, and an analyzer coupled to the positive feedback amplifier.
摘要翻译：提供了一种用于从半导体晶片去除膜的端点检测的方法和装置，具有响应于膜去除处理产生信号的传感器，耦合到传感器的正反馈放大器，正反馈放大器具有模式选择器以及耦合到正反馈放大器的分析器。

5. 发明授权

US6072313A In-situ monitoring and control of conductive films by detecting changes in induced eddy currents 失效
标题翻译：通过检测诱导涡流的变化来原位监测和控制导电膜
公开(公告)号：US6072313A
公开(公告)日：2000-06-06
申请号：US876774
申请日：1997-06-17
申请人： Leping Li , Steven George Barbee , Arnold Halperin , Tony Frederick Heinz
发明人： Leping Li , Steven George Barbee , Arnold Halperin , Tony Frederick Heinz
IPC分类号： G01B7/00 , G01B7/06 , H01L21/20 , H01L21/302 , H01L21/66
CPC分类号： G01B7/06 , G01B7/10
摘要： The change in thickness of a film on an underlying body such as a semiconductor substrate is monitored in situ by inducing a current in the film, and as the thickness of the film changes (either increase or decrease), the changes in the current are detected. With a conductive film, eddy currents are induced in the film by a generating an alternating electromagnetic field with a sensor which includes a capacitor and an inductor.
摘要翻译：通过在膜中感应电流来原位监测半导体衬底等底层上的膜的厚度变化，随着膜的厚度变化（增加或减小），检测电流的变化。利用导电膜，通过与包括电容器和电感器的传感器产生交变电磁场，在膜中引起涡流。

6. 发明授权

US5731697A In-situ monitoring of the change in thickness of films 失效
公开(公告)号：US5731697A
公开(公告)日：1998-03-24
申请号：US641470
申请日：1996-05-01
申请人： Leping Li , Steven George Barbee , Arnold Halperin , Tony Frederick Heinz
发明人： Leping Li , Steven George Barbee , Arnold Halperin , Tony Frederick Heinz
IPC分类号： G01B7/00 , G01B7/06 , H01L21/20 , H01L21/302 , H01L21/66
CPC分类号： G01B7/06 , G01B7/10
摘要： The change in thickness of a film on an underlying body such as a semiconductor substrate is monitored in situ by inducing a current in the film, and as the thickness of the film changes (either increase or decrease), the changes in the current are detected. With a conductive film, eddy currents are induced in the film by a generating an alternating electromagnetic field with a sensor which includes a capacitor and an inductor.

7. 发明授权

US5659492A Chemical mechanical polishing endpoint process control 失效
标题翻译：化学机械抛光终点过程控制
公开(公告)号：US5659492A
公开(公告)日：1997-08-19
申请号：US620721
申请日：1996-03-19
申请人： Leping Li , Steven George Barbee , Arnold Halperin
发明人： Leping Li , Steven George Barbee , Arnold Halperin
IPC分类号： B24B37/013 , B24B49/03 , H01L21/66 , B24B49/16
CPC分类号： B24B37/013 , B24B49/03 , H01L22/26
摘要： A method and apparatus are provided for determining the endpoint for chemical mechanical polishing a film on a wafer. First, a reference point polishing time indicating when a breakthrough of the film has occurred is determined, then an overpolishing time indicating an interval between the reference point polishing time and when the film has been completely polished is determined. To get the total polishing time to the endpoint, the reference point polishing time and the overpolishing time are added.
摘要翻译：提供了一种用于确定化学机械抛光晶片上的薄膜的终点的方法和装置。首先，确定指示膜的突破何时发生的参考点抛光时间，然后确定指示参考点研磨时间与膜完全抛光之间的间隔的过度抛光时间。为了得到终点的总抛光时间，添加了参考点抛光时间和过度抛光时间。

8. 发明授权

US5770948A Rotary signal coupling for chemical mechanical polishing endpoint detection with a strasbaugh tool 失效
标题翻译：旋转信号耦合用于化学机械抛光终点检测与strasbaugh工具
公开(公告)号：US5770948A
公开(公告)日：1998-06-23
申请号：US620723
申请日：1996-03-19
申请人： Leping Li , Steven George Barbee , Arnold Halperin , Richard Mars Ruggiero , William Joseph Surovie
发明人： Leping Li , Steven George Barbee , Arnold Halperin , Richard Mars Ruggiero , William Joseph Surovie
IPC分类号： B24B37/013 , B24B37/24 , B24B37/26 , G01B7/06 , H01L21/302
CPC分类号： B24B37/013 , B24B37/245 , B24B37/26 , B24B49/12 , G01B7/06
摘要： An apparatus for rotary signal coupling in in-situ monitoring of a chemical-mechanical polishing process by a polisher is provided with a sensor fixed to a rotatable wafer carrier for creating a signal responsive to the chemical mechanical polishing process, a conductor coupled to the sensor for receiving the signal, the conductor fixed to the rotatable wafer carrier, a contact coupled to the conductor, the contact fixed to a stationary drive arm, and signal transfer means coupled to the contact for transferring the signal to a monitoring means.
摘要翻译：用于通过抛光机原位监测化学机械抛光工艺的旋转信号耦合装置设置有固定到可旋转晶片载体的传感器，用于产生响应于化学机械抛光工艺的信号，耦合到传感器的导体为了接收信号，固定到可旋转晶片载体的导体，耦合到导体的触点，固定到固定驱动臂的触点和耦合到触点的信号传送装置，用于将信号传送到监视装置。

9. 发明授权

US5660672A In-situ monitoring of conductive films on semiconductor wafers 失效
标题翻译：半导体晶片导电膜的原位监测
公开(公告)号：US5660672A
公开(公告)日：1997-08-26
申请号：US419208
申请日：1995-04-10
申请人： Leping Li , Steven George Barbee , Arnold Halperin , Tony Frederick Heinz
发明人： Leping Li , Steven George Barbee , Arnold Halperin , Tony Frederick Heinz
IPC分类号： G01B7/00 , G01B7/06 , G01R31/26 , H01L21/302 , H01L21/3205 , H01L21/66
CPC分类号： G01B7/105
摘要： The change in thickness of a film on an underlying body such as a semiconductor substrate is monitored in situ by inducing a current in the film, and as the thickness of the film changes (either increase or decrease), the changes in the current are detected. With a conductive film, eddy currents are induced in the film by a generating an alternating electromagnetic field with a sensor which includes a capacitor and an inductor.
摘要翻译：通过在膜中感应电流来原位监测半导体衬底等底层上的膜的厚度变化，随着膜的厚度变化（增加或减小），检测电流的变化。利用导电膜，通过与包括电容器和电感器的传感器产生交变电磁场，在膜中引起涡流。

10. 发明授权

US06254453B1 Optimization of chemical mechanical process by detection of oxide/nitride interface using CLD system 有权
标题翻译：通过使用CLD系统检测氧化物/氮化物界面来优化化学机械过程
公开(公告)号：US06254453B1
公开(公告)日：2001-07-03
申请号：US09409243
申请日：1999-09-30
申请人： Leping Li , James A. Gilhooly , Clifford O. Morgan, III , Cong Wei
发明人： Leping Li , James A. Gilhooly , Clifford O. Morgan, III , Cong Wei
IPC分类号： B26B100
CPC分类号： G01N21/76
摘要： A method is provided to optimize the chemical mechanical planarization process of wafers having a target removal layer and a stop layer. A slurry is added to a polishing table which includes a polishing pad and a platen adapted for rotation; a portion of the slurry is allowed to engage an interface between the polishing pad and the wafer. A gaseous sample is continuously extracted from the slurry; the gaseous sample includes a reactant product created when the polishing pad engages the stop layer. The gaseous sample is introduced into a reactant product detector. A first time is determined, corresponding to an initial detection of the reactant product in the slurry, thereby creating a first reference point. A second time is determined, corresponding to the detection of a maximum volume of the reactant in said slurry, thereby creating a second reference point. The first and second reference points are then processed to obtain a signal, wherein the signal reflects the uniformity of removal of the layer containing the reactant product.
摘要翻译：提供了一种用于优化具有目标去除层和停止层的晶片的化学机械平坦化处理的方法。将浆料添加到包括抛光垫和适于旋转的压板的抛光台上; 允许一部分浆料与抛光垫和晶片之间的界面接合。从浆料中连续提取气态样品; 气态样品包括当抛光垫接合停止层时产生的反应物产物。将气态样品引入反应物产物检测器。确定第一次，对应于浆料中反应物产物的初始检测，从而产生第一参考点。确定第二次，对应于所述浆料中反应物的最大体积的检测，从而产生第二参考点。然后处理第一和第二参考点以获得信号，其中信号反映了含有反应物产物的层的去除的均匀性。

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