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91. 发明申请

US20110129652A1 Chemical Trim of Photoresist Lines by Means of A Tuned Overcoat 有权
标题翻译：通过调整大衣的光刻胶线的化学修剪
公开(公告)号：US20110129652A1
公开(公告)日：2011-06-02
申请号：US12983297
申请日：2011-01-01
申请人： Sean David Burns , Matthew E. Colburn , Steven John Holmes , Wu-Song Huang
发明人： Sean David Burns , Matthew E. Colburn , Steven John Holmes , Wu-Song Huang
IPC分类号： B32B3/02 , G03F7/20
CPC分类号： G03F7/40 , Y10T428/24802
摘要： A new lithographic process comprises reducing the linewidth of an image while maintaining the lithographic process window, and using this process to fabricate pitch split structures comprising nm order (e.g., about 22 nm) node semiconductor devices. The process comprises applying a lithographic resist layer on a surface of a substrate and patterning and developing the lithographic resist layer to form a nm order node image having an initial line width. Overcoating the nm order node image with an acidic polymer produces an acidic polymer coated image. Heating the acidic polymer coated image gives a heat treated coating on the image, the heating being conducted at a temperature and for a time sufficient to reduce the initial linewidth to a subsequent narrowed linewidth. Developing the heated treated coating removes it from the image resulting in a free-standing trimmed lithographic feature on the substrate. Optionally repeating the foregoing steps further reduces the linewidth of the narrowed line. The invention also comprises a product produced by this process.
摘要翻译：新的光刻工艺包括在保持光刻工艺窗口的同时降低图像的线宽，并且使用该工艺来制造包括nm阶（例如约22nm）的节点半导体器件的间距分裂结构。该方法包括在基片的表面上施加平版印刷抗蚀剂层，并对平版印刷抗蚀剂层进行图形化和显影，以形成具有初始线宽的nm阶节点图像。用酸性聚合物覆盖nm阶节点图像产生酸性聚合物涂层图像。加热酸性聚合物涂覆的图像给图像上的热处理涂层，加热在足以将初始线宽降低到随后变窄的线宽的温度和时间内进行。显影加热处理的涂层将其从图像中去除，从而在基底上产生独立的修整光刻特征。可选地，重复前述步骤进一步减小了变窄线的线宽。本发明还包括通过该方法生产的产品。

92. 发明授权

US07901864B2 Radiation-sensitive composition and method of fabricating a device using the radiation-sensitive composition 有权
标题翻译：辐射敏感组合物和使用该辐射敏感组合物制造器件的方法
公开(公告)号：US07901864B2
公开(公告)日：2011-03-08
申请号：US10948826
申请日：2004-09-23
申请人： Wu-Song Huang , Marie Angelopoulos , Timothy A. Brunner , Dirk Pfeiffer , Ratnam Sooriyakumaran
发明人： Wu-Song Huang , Marie Angelopoulos , Timothy A. Brunner , Dirk Pfeiffer , Ratnam Sooriyakumaran
IPC分类号： G03C1/00 , H01L21/00 , G03F1/00
CPC分类号： G03F7/0755 , G03F7/0382 , G03F7/0392
摘要： A radiation-sensitive composition (and method of fabricating a device using the composition) includes a nonpolymeric silsesquioxane including at least one acid labile moiety, a polymer including at least one member selected from the group consisting of an aqueous base soluble moiety and an acid labile moiety, and a radiation-sensitive acid generator. Another radiation-senstive composition (and method of fabricating a device using the composition) includes a nonpolymerc silsesquioxane including at least one aqueous base soluble moiety, a polymer including an aqueous base soluble moiety, a crosslinker, and a radiation-sensitive acid generator.
摘要翻译：辐射敏感性组合物（以及使用该组合物制造器件的方法）包括非聚合倍半硅氧烷，其包含至少一种酸不稳定部分，包含至少一种选自碱性水溶性部分和酸不稳定性的成员的聚合物部分和辐射敏感性酸产生剂。另一种辐射敏感组合物（以及使用该组合物制造器件的方法）包括非聚合物倍半硅氧烷，其包括至少一种水溶性基团可溶部分，包含水溶性基团可溶部分的聚合物，交联剂和辐射敏感性酸发生剂。

93. 发明申请

US20100196825A1 DEVELOPABLE BOTTOM ANTIREFLECTIVE COATING COMPOSITIONS ESPECIALLY SUITABLE FOR ION IMPLANT APPLICATIONS 失效
标题翻译：可开发的底部抗反射涂料组合物特别适用于离子植入应用
公开(公告)号：US20100196825A1
公开(公告)日：2010-08-05
申请号：US12363913
申请日：2009-02-02
申请人： Wu-Song Huang , Libor Vyklicky , Pushkara Rao Varanasi
发明人： Wu-Song Huang , Libor Vyklicky , Pushkara Rao Varanasi
IPC分类号： G03F7/004 , G03F7/20
CPC分类号： G03F7/091 , G03F7/0392 , G03F7/0397
摘要： Compositions characterized by the presence of an aqueous base-soluble polymer having aromatic moieties and aliphatic alcohol moieties have been found which are especially useful as developable bottom antireflective coatings in 193 nm lithographic processes. The compositions enable improved lithographic processes which are especially useful in the context of subsequent ion implantation or other similar processes where avoidance of aggressive antireflective coating removal techniques is desired.
摘要翻译：已经发现特征在于具有芳族部分和脂族醇部分的水溶性基础可溶性聚合物的存在的组合物，其特别用作193nm平版印刷方法中的可显影底部抗反射涂层。该组合物能够改进光刻过程，其在随后的离子注入或其它类似方法的背景下是特别有用的，其中需要避免侵蚀性抗反射涂层去除技术。

94. 发明申请

US20100047712A1 TOP ANTIREFLECTIVE COATING COMPOSITION CONTAINING HYDROPHOBIC AND ACIDIC GROUPS 有权
标题翻译：含有疏水性和酸性组合物的顶级抗反射涂料组合物
公开(公告)号：US20100047712A1
公开(公告)日：2010-02-25
申请号：US12605771
申请日：2009-10-26
申请人： Mahmoud Khojasteh , Wu-Song Huang , Margaret C. Lawson , Kaushal S. Patel , Irene Popova , Pushkara R. Varanasi
发明人： Mahmoud Khojasteh , Wu-Song Huang , Margaret C. Lawson , Kaushal S. Patel , Irene Popova , Pushkara R. Varanasi
IPC分类号： G03F7/20 , G03F7/004
CPC分类号： G03F7/091 , G03F7/0046 , Y10S438/952
摘要： The present invention discloses a composition suitable for use as a top antireflective coating and barrier layer for immersion lithography. The inventive composition is soluble in aqueous base solutions and insoluble in water. The inventive composition comprises a polymer having at least one hydrophobic moiety, at least one acidic moiety with a pKa of 1 or less, and at least one aqueous base soluble moiety. The present invention also discloses a method of forming a patterned layer on a substrate by using the inventive composition in lithography.
摘要翻译：本发明公开了一种适合用作浸没式光刻的顶部抗反射涂层和阻挡层的组合物。本发明的组合物可溶于碱性水溶液并且不溶于水。本发明的组合物包含具有至少一个疏水部分，至少一个pKa为1或更小的酸性部分和至少一种水溶性基团可溶部分的聚合物。本发明还公开了通过在光刻中使用本发明的组合物在衬底上形成图案化层的方法。

95. 发明申请

US20090311490A1 CHEMICAL TRIM OF PHOTORESIST LINES BY MEANS OF A TUNED OVERCOAT MATERIAL 有权
标题翻译：通过调谐过滤材料的化学品线的化学研究
公开(公告)号：US20090311490A1
公开(公告)日：2009-12-17
申请号：US12137743
申请日：2008-06-12
申请人： Sean David Burns , Matthew E. Colburn , Steven John Holmes , Wu-Song Huang
发明人： Sean David Burns , Matthew E. Colburn , Steven John Holmes , Wu-Song Huang
IPC分类号： B32B3/00 , G03F7/20
CPC分类号： G03F7/40 , Y10T428/24802
摘要： A new lithographic process comprises reducing the linewidth of an image while maintaining the lithographic process window, and using this process to fabricate pitch split structures comprising nm order (e.g., about 22 nm) node semiconductor devices. The process comprises applying a lithographic resist layer on a surface of a substrate and patterning and developing the lithographic resist layer to form a nm order node image having an initial line width. Overcoating the nm order node image with an acidic polymer produces an acidic polymer coated image. Heating the acidic polymer coated image gives a heat treated coating on the image, the heating being conducted at a temperature and for a time sufficient to reduce the initial linewidth to a subsequent narrowed linewidth. Developing the heated treated coating removes it from the image resulting in a free-standing trimmed lithographic feature on the substrate. Optionally repeating the foregoing steps further reduces the linewidth of the narrowed line. The invention also comprises a product produced by this process.
摘要翻译：新的光刻工艺包括在保持光刻工艺窗口的同时降低图像的线宽，并且使用该工艺来制造包括nm阶（例如约22nm）的节点半导体器件的间距分裂结构。该方法包括在基片的表面上施加平版印刷抗蚀剂层，并对平版印刷抗蚀剂层进行图形化和显影，以形成具有初始线宽的nm阶节点图像。用酸性聚合物覆盖nm阶节点图像产生酸性聚合物涂层图像。加热酸性聚合物涂覆的图像给图像上的热处理涂层，加热在足以将初始线宽降低到随后变窄的线宽的温度和时间内进行。显影加热处理的涂层将其从图像中去除，从而在基底上产生独立的修整光刻特征。可选地，重复前述步骤进一步减小了变窄线的线宽。本发明还包括通过该方法生产的产品。

96. 发明申请

US20090286180A1 FUSED AROMATIC STRUCTURES AND METHODS FOR PHOTOLITHOGRAPHIC APPLICATIONS 有权
标题翻译：用于光刻应用的熔融芳构结构和方法
公开(公告)号：US20090286180A1
公开(公告)日：2009-11-19
申请号：US12508652
申请日：2009-07-24
申请人： James J. Bucchignano , Wu-Song Huang , Pushkara R. Varanasi , Roy R. Yu
发明人： James J. Bucchignano , Wu-Song Huang , Pushkara R. Varanasi , Roy R. Yu
IPC分类号： G03F7/20 , G03F7/004
CPC分类号： G03F7/0045 , G03F7/0392 , Y10S430/12 , Y10S430/122 , Y10S430/126 , Y10S430/143
摘要： A resist composition and a method for forming a patterned feature on a substrate. The composition comprises a molecular glass having at least one fused polycyclic moiety and at least one base soluble functional group protected with an acid labile protecting group, and a photosensitive acid generator. The method includes providing a composition including a photosensitive acid generator and a molecular glass having at least one fused polycyclic moiety and at least one base soluble functional group protected with an acid labile protecting group, forming a film of the composition on the substrate, patternwise imaging the film, wherein at least one region of the film is exposed to radiation or a beam of particles, resulting in production of an acid catalyst in the exposed region, baking the film, developing the film, resulting in removal of base-soluble exposed regions, wherein a patterned feature from the film remains following the removal.
摘要翻译：抗蚀剂组合物和在基材上形成图案化特征的方法。该组合物包含具有至少一个稠合多环部分和至少一个被酸不稳定保护基团保护的碱溶性官能团的分子玻璃和光敏酸产生剂。该方法包括提供包含光敏酸产生剂和具有至少一个稠合多环部分的分子玻璃和至少一个被酸不稳定保护基团保护的碱可溶官能团的组合物，在该基质上形成该组合物的膜，图案成像所述膜，其中所述膜的至少一个区域暴露于辐射或颗粒束，导致在所述暴露区域中产生酸催化剂，烘烤所述膜，显影所述膜，导致去除可溶于碱的暴露区域，其中来自膜的图案化特征在去除之后保持不变。

97. 发明授权

US07566527B2 Fused aromatic structures and methods for photolithographic applications 失效
标题翻译：熔融芳族结构和光刻应用的方法
公开(公告)号：US07566527B2
公开(公告)日：2009-07-28
申请号：US11769089
申请日：2007-06-27
申请人： James J. Bucchignano , Wu-Song Huang , Pushkara R. Varanasi , Roy R. Yu
发明人： James J. Bucchignano , Wu-Song Huang , Pushkara R. Varanasi , Roy R. Yu
IPC分类号： G03F7/039 , G03F7/20 , G03F7/30 , G03F7/36 , G03F7/38
CPC分类号： G03F7/0045 , G03F7/0392 , Y10S430/12 , Y10S430/122 , Y10S430/126 , Y10S430/143
摘要： A resist composition and a method for forming a patterned feature on a substrate. The composition comprises a molecular glass having at least one fused polycyclic moiety and at least one base soluble functional group protected with an acid labile protecting group, and a photosensitive acid generator. The method includes providing a composition including a photosensitive acid generator and a molecular glass having at least one fused polycyclic moiety and at least one base soluble functional group protected with an acid labile protecting group, forming a film of the composition on the substrate, patternwise imaging the film, wherein at least one region of the film is exposed to radiation or a beam of particles, resulting in production of an acid catalyst in the exposed region, baking the film, developing the film, resulting in removal of base-soluble exposed regions, wherein a patterned feature from the film remains following the removal.
摘要翻译：抗蚀剂组合物和在基材上形成图案化特征的方法。该组合物包含具有至少一个稠合多环部分和至少一个被酸不稳定保护基团保护的碱溶性官能团的分子玻璃和光敏酸产生剂。该方法包括提供包含光敏酸产生剂和具有至少一个稠合多环部分的分子玻璃和至少一个被酸不稳定保护基团保护的碱可溶官能团的组合物，在该基质上形成该组合物的膜，图案成像所述膜，其中所述膜的至少一个区域暴露于辐射或颗粒束，导致在所述暴露区域中产生酸催化剂，烘烤所述膜，显影所述膜，导致去除可溶于碱的暴露区域，其中来自膜的图案化特征在去除之后保持不变。

98. 发明申请

US20080227030A1 Use of Mixed Bases to Enhance Patterned Resist Profiles on Chrome or Sensitive Substrates 有权
标题翻译：使用混合基材来增强铬或敏感基材上的图案化抗蚀剂型材
公开(公告)号：US20080227030A1
公开(公告)日：2008-09-18
申请号：US10597904
申请日：2004-02-11
申请人： Wayne M. Moreau , Marie Angelopoulos , Wu-Song Huang , David R. Medeiros , Karen E. Petrillo
发明人： Wayne M. Moreau , Marie Angelopoulos , Wu-Song Huang , David R. Medeiros , Karen E. Petrillo
IPC分类号： G03F7/004 , G03F7/34
CPC分类号： G03F7/0045 , G03F1/78 , G03F7/0392 , G03F7/40 , Y10S430/143
摘要： Resist compositions having good footing properties even on difficult substrates are obtained by using a combination of base additives including a room temperature solid base, and a liquid low vapor pressure base. The compositions are especially useful on metal substrates such as chromium-containing layers commonly used in mask-making.
摘要翻译：通过使用包括室温固体碱和液体低蒸气压基料的基础添加剂的组合，可获得即使在困难的基材上也具有良好基础性能的抗蚀剂组合物。该组合物在通常用于掩模制造的金属基材如含铬层上特别有用。

99. 发明授权

US07314700B2 High sensitivity resist compositions for electron-based lithography 有权
标题翻译：用于电子光刻的高灵敏度抗蚀剂组合物
公开(公告)号：US07314700B2
公开(公告)日：2008-01-01
申请号：US10537259
申请日：2002-12-05
申请人： Wu-Song Huang , Wenjie Li , Wayne Moreau , David R. Medeiros , Karen E. Petrillo , Robert N. Lang , Marie Angelopoulos
发明人： Wu-Song Huang , Wenjie Li , Wayne Moreau , David R. Medeiros , Karen E. Petrillo , Robert N. Lang , Marie Angelopoulos
IPC分类号： G03C1/492 , G03C1/494 , G03C1/76 , G03C5/00
CPC分类号： G03F7/0045 , G03F7/0392
摘要： The resist compositions having an acid sensitive imaging polymer and a radiation sensitive acid generator component comprising: (i) a first radiation sensitive acid generator selected from the group consisting of dissolution-inhibiting acid generators, and (ii) a second radiation sensitive acid generator selected from the group consisting of unprotected acidic group-functionalized acid generators and acid labile group-protected acidic group-functionalized radiation sensitive acid generators; enables formation of high sensitivity resists suitable for use in EPL, EUV, soft x-ray, and other low energy intensity lithographic imaging applications. The resist compositions may be useful in other lithographic processes as well.
摘要翻译：具有酸敏感成像聚合物和辐射敏感性酸产生剂组分的抗蚀剂组合物包含：（i）选自溶解抑制酸产生剂的第一辐射敏感性酸产生剂，和（ii）选择的第二辐射敏感酸产生剂由不受保护的酸性官能化酸产生剂和酸不稳定基团保护的酸性官能化辐射敏感酸发生剂组成的组; 能够形成适用于EPL，EUV，软X射线和其他低能量光刻成像应用的高灵敏度抗蚀剂。抗蚀剂组合物也可用于其它平版印刷工艺。

100. 发明申请

US20070087285A1 Top antireflective coating composition with low refractive index at 193nm radiation wavelength 有权
$Top antireflective coating composition with low refractive index at 193nm radiation wavelength$
标题翻译：顶部抗反射涂层组合物，在193nm辐射波长下具有低折射率
公开(公告)号：US20070087285A1
公开(公告)日：2007-04-19
申请号：US11249693
申请日：2005-10-13
申请人： Wu-Song Huang , William Heath , Kaushal Patel , Pushkara Varanasi
发明人： Wu-Song Huang , William Heath , Kaushal Patel , Pushkara Varanasi
IPC分类号： G03C1/00
CPC分类号： G03F7/091 , Y10S438/952
摘要： Compositions characterized by the presence of an aqueous base-soluble polymer having aromatic moieties and a refractive index value n of less than 1.5 with respect to a radiation wavelength of 193 nm have been found which are especially useful as top antireflective coatings in 193 nm dry lithographic processes. Polymers with an ethylenic backbone and having fluorine and sulfonic acid moieties have been found to be especially useful. The compositions enable top reflection control at 193 nm while providing ease of use by virtue of their solubility in aqueous alkaline developer solutions.
摘要翻译：已经发现特征在于具有相对于193nm的辐射波长的具有芳族部分和折射率值n小于1.5的水溶性基团可溶性聚合物的组合物，其特别用作193nm干法光刻中的顶部抗反射涂层过程。已经发现具有乙烯主链并具有氟和磺酸部分的聚合物是特别有用的。该组合物能够在193nm的顶部反射控制，同时通过其在含水碱性显影剂溶液中的溶解度而提供易于使用。

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