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1. 发明授权

US07608390B2 Top antireflective coating composition containing hydrophobic and acidic groups 有权
标题翻译：顶级抗反射涂料组合物含有疏水和酸性基团
公开(公告)号：US07608390B2
公开(公告)日：2009-10-27
申请号：US11462527
申请日：2006-08-04
申请人： Mahmoud Khojasteh , Wu-Song Huang , Margaret C. Lawson , Kaushal S. Patel , Irene Popova , Pushkara R. Varanasi
发明人： Mahmoud Khojasteh , Wu-Song Huang , Margaret C. Lawson , Kaushal S. Patel , Irene Popova , Pushkara R. Varanasi
IPC分类号： G03F7/40 , G03F7/11
CPC分类号： G03F7/091 , G03F7/0046 , Y10S438/952
摘要： The present invention discloses a composition suitable for use as a top antireflective coating and barrier layer for immersion lithography. The inventive composition is soluble in aqueous base solutions and insoluble in water. The inventive composition comprises a polymer having at least one hydrophobic moiety, at least one acidic moiety with a pKa of 1 or less, and at least one aqueous base soluble moiety. The present invention also discloses a method of forming a patterned layer on a substrate by using the inventive composition in lithography.
摘要翻译：本发明公开了一种适合用作浸没式光刻的顶部抗反射涂层和阻挡层的组合物。本发明的组合物可溶于碱性水溶液并且不溶于水。本发明的组合物包含具有至少一个疏水部分，至少一个pKa为1或更小的酸性部分和至少一种碱可溶性部分的聚合物。本发明还公开了通过在光刻中使用本发明的组合物在衬底上形成图案化层的方法。

2. 发明授权

US08304178B2 Top antireflective coating composition containing hydrophobic and acidic groups 有权
标题翻译：含有疏水和酸性基团的顶级抗反射涂料组合物
公开(公告)号：US08304178B2
公开(公告)日：2012-11-06
申请号：US12605771
申请日：2009-10-26
申请人： Mahmoud Khojasteh , Wu-Song Huang , Margaret C. Lawson , Kaushal S. Patel , Irene Popova , Pushkara R. Varanasi
发明人： Mahmoud Khojasteh , Wu-Song Huang , Margaret C. Lawson , Kaushal S. Patel , Irene Popova , Pushkara R. Varanasi
IPC分类号： G03F7/11 , G03F7/40 , C08F18/20
CPC分类号： G03F7/091 , G03F7/0046 , Y10S438/952
摘要： The present invention discloses a composition suitable for use as a top antireflective coating and barrier layer for immersion lithography. The inventive composition is soluble in aqueous base solutions and insoluble in water. The inventive composition comprises a polymer having at least one hydrophobic moiety, at least one acidic moiety with a pKa of 1 or less, and at least one aqueous base soluble moiety. The present invention also discloses a method of forming a patterned layer on a substrate by using the inventive composition in lithography.
摘要翻译：本发明公开了一种适合用作浸没式光刻的顶部抗反射涂层和阻挡层的组合物。本发明的组合物可溶于碱性水溶液并且不溶于水。本发明的组合物包含具有至少一个疏水部分，至少一个pKa为1或更小的酸性部分和至少一种碱可溶性部分的聚合物。本发明还公开了通过在光刻中使用本发明的组合物在衬底上形成图案化层的方法。

3. 发明申请

US20100047712A1 TOP ANTIREFLECTIVE COATING COMPOSITION CONTAINING HYDROPHOBIC AND ACIDIC GROUPS 有权
标题翻译：含有疏水性和酸性组合物的顶级抗反射涂料组合物
公开(公告)号：US20100047712A1
公开(公告)日：2010-02-25
申请号：US12605771
申请日：2009-10-26
申请人： Mahmoud Khojasteh , Wu-Song Huang , Margaret C. Lawson , Kaushal S. Patel , Irene Popova , Pushkara R. Varanasi
发明人： Mahmoud Khojasteh , Wu-Song Huang , Margaret C. Lawson , Kaushal S. Patel , Irene Popova , Pushkara R. Varanasi
IPC分类号： G03F7/20 , G03F7/004
CPC分类号： G03F7/091 , G03F7/0046 , Y10S438/952
摘要： The present invention discloses a composition suitable for use as a top antireflective coating and barrier layer for immersion lithography. The inventive composition is soluble in aqueous base solutions and insoluble in water. The inventive composition comprises a polymer having at least one hydrophobic moiety, at least one acidic moiety with a pKa of 1 or less, and at least one aqueous base soluble moiety. The present invention also discloses a method of forming a patterned layer on a substrate by using the inventive composition in lithography.
摘要翻译：本发明公开了一种适合用作浸没式光刻的顶部抗反射涂层和阻挡层的组合物。本发明的组合物可溶于碱性水溶液并且不溶于水。本发明的组合物包含具有至少一个疏水部分，至少一个pKa为1或更小的酸性部分和至少一种水溶性基团可溶部分的聚合物。本发明还公开了通过在光刻中使用本发明的组合物在衬底上形成图案化层的方法。

4. 发明申请

US20080032228A1 TOP ANTIREFLECTIVE COATING COMPOSITION CONTAINING HYDROPHOBIC AND ACIDIC GROUPS 有权
标题翻译：含有疏水性和酸性组合物的顶级抗反射涂料组合物
公开(公告)号：US20080032228A1
公开(公告)日：2008-02-07
申请号：US11462527
申请日：2006-08-04
申请人： Mahmoud Khojasteh , Wu-Song Huang , Margaret C. Lawson , Kaushal S. Patel , Irene Popova , Pushkara R. Varanasi
发明人： Mahmoud Khojasteh , Wu-Song Huang , Margaret C. Lawson , Kaushal S. Patel , Irene Popova , Pushkara R. Varanasi
IPC分类号： G03C1/00
CPC分类号： G03F7/091 , G03F7/0046 , Y10S438/952
摘要： The present invention discloses a composition suitable for use as a top antireflective coating and barrier layer for immersion lithography. The inventive composition is soluble in aqueous base solutions and insoluble in water. The inventive composition comprises a polymer having at least one hydrophobic moiety, at least one acidic moiety with a pKa of 1 or less, and at least one aqueous base soluble moiety. The present invention also discloses a method of forming a patterned layer on a substrate by using the inventive composition in lithography.
摘要翻译：本发明公开了一种适合用作浸没式光刻的顶部抗反射涂层和阻挡层的组合物。本发明的组合物可溶于碱性水溶液并且不溶于水。本发明的组合物包含具有至少一个疏水部分，至少一个pKa为1或更小的酸性部分和至少一种碱可溶性部分的聚合物。本发明还公开了通过在光刻中使用本发明的组合物在衬底上形成图案化层的方法。

5. 发明申请

US20090291392A1 WET DEVELOPABLE BOTTOM ANTIREFLECTIVE COATING COMPOSITION AND METHOD FOR USE THEREOF 有权
标题翻译：可湿性底漆抗反射涂料组合物及其使用方法
公开(公告)号：US20090291392A1
公开(公告)日：2009-11-26
申请号：US12478442
申请日：2009-06-04
申请人： Kuang-Jung J. Chen , Mahmoud Khojasteh , Ranee Wai-Ling Kwong , Margaret C. Lawson , Wenjie Li , Kaushal S. Patel , Pushkara R. Varanasi
发明人： Kuang-Jung J. Chen , Mahmoud Khojasteh , Ranee Wai-Ling Kwong , Margaret C. Lawson , Wenjie Li , Kaushal S. Patel , Pushkara R. Varanasi
IPC分类号： G03F7/004 , C08G73/10 , C08G63/08 , C08L67/04 , C08L79/08 , G03F7/20
CPC分类号： G03F7/091 , C08F220/28 , C08F222/40 , C08F232/08 , Y10S430/151
摘要： The present invention discloses an antireflective coating composition for applying between a substrate surface and a positive photoresist composition. The antireflective coating composition is developable in an aqueous alkaline developer. The antireflective coating composition comprises a polymer, which comprises at least one monomer unit containing one or more moieties selected from the group consisting of a lactone, maleimide, and an N-alkyl maleimide; and at least one monomer unit containing one or more absorbing moieties. The polymer does not comprise an acid labile group. The present invention also discloses a method of forming and transferring a relief image by using the inventive antireflective coating composition in photolithography.
摘要翻译：本发明公开了一种用于在基材表面和正性光致抗蚀剂组合物之间施加的抗反射涂料组合物。抗反射涂料组合物可在含水碱性显影剂中显影。抗反射涂料组合物包括聚合物，其包含至少一种含有一个或多个选自内酯，马来酰亚胺和N-烷基马来酰亚胺的部分的单体单元; 和含有一个或多个吸收部分的至少一个单体单元。聚合物不包含酸不稳定基团。本发明还公开了一种通过在光刻中使用本发明的抗反射涂料组合物来形成和转印浮雕图像的方法。

6. 发明授权

US07563563B2 Wet developable bottom antireflective coating composition and method for use thereof 失效
标题翻译：湿可显影底部抗反射涂料组合物及其使用方法
公开(公告)号：US07563563B2
公开(公告)日：2009-07-21
申请号：US11405879
申请日：2006-04-18
申请人： Kuang-Jung J. Chen , Mahmoud Khojasteh , Ranee Wai-Ling Kwong , Margaret C. Lawson , Wenjie Li , Kaushal S. Patel , Pushkara R. Varanasi
发明人： Kuang-Jung J. Chen , Mahmoud Khojasteh , Ranee Wai-Ling Kwong , Margaret C. Lawson , Wenjie Li , Kaushal S. Patel , Pushkara R. Varanasi
IPC分类号： G03C1/825 , G03F7/039 , G03F7/20 , G03F7/30 , G03F7/36
CPC分类号： G03F7/091 , C08F220/28 , C08F222/40 , C08F232/08 , Y10S430/151
摘要： The present invention discloses an antireflective coating composition for applying between a substrate surface and a positive photoresist composition. The antireflective coating composition is developable in an aqueous alkaline developer. The antireflective coating composition comprises a polymer, which comprises at least one monomer unit containing one or more moieties selected from the group consisting of a lactone, maleimide, and an N-alkyl maleimide; and at least one monomer unit containing one or more absorbing moieties. The polymer does not comprise an acid labile group. The present invention also discloses a method of forming and transferring a relief image by using the inventive antireflective coating composition in photolithography.
摘要翻译：本发明公开了一种用于在基材表面和正性光致抗蚀剂组合物之间施加的抗反射涂料组合物。抗反射涂料组合物可在含水碱性显影剂中显影。抗反射涂料组合物包括聚合物，其包含至少一种含有一个或多个选自内酯，马来酰亚胺和N-烷基马来酰亚胺的部分的单体单元; 和含有一个或多个吸收部分的至少一个单体单元。聚合物不包含酸不稳定基团。本发明还公开了一种通过在光刻中使用本发明的抗反射涂料组合物来形成和转印浮雕图像的方法。

7. 发明授权

US08202678B2 Wet developable bottom antireflective coating composition and method for use thereof 有权
标题翻译：湿可显影底部抗反射涂料组合物及其使用方法
公开(公告)号：US08202678B2
公开(公告)日：2012-06-19
申请号：US12478442
申请日：2009-06-04
申请人： Kuang-Jung J. Chen , Mahmoud Khojasteh , Ranee Wai-Ling Kwong , Margaret C. Lawson , Wenjie Li , Kaushal S. Patel , Pushkara R. Varanasi
发明人： Kuang-Jung J. Chen , Mahmoud Khojasteh , Ranee Wai-Ling Kwong , Margaret C. Lawson , Wenjie Li , Kaushal S. Patel , Pushkara R. Varanasi
IPC分类号： G03F7/09 , G03F7/20 , G03F7/30 , G03F7/36 , G03C1/825
CPC分类号： G03F7/091 , C08F220/28 , C08F222/40 , C08F232/08 , Y10S430/151
摘要： The present invention discloses an antireflective coating composition for applying between a substrate surface and a positive photoresist composition. The antireflective coating composition is developable in an aqueous alkaline developer. The antireflective coating composition comprises a polymer, which comprises at least one monomer unit containing one or more moieties selected from the group consisting of a lactone, maleimide, and an N-alkyl maleimide; and at least one monomer unit containing one or more absorbing moieties. The polymer does not comprise an acid labile group. The present invention also discloses a method of forming and transferring a relief image by using the inventive antireflective coating composition in photolithography.
摘要翻译：本发明公开了一种用于在基材表面和正性光致抗蚀剂组合物之间施加的抗反射涂料组合物。抗反射涂料组合物可在含水碱性显影剂中显影。抗反射涂料组合物包括聚合物，其包含至少一种含有一个或多个选自内酯，马来酰亚胺和N-烷基马来酰亚胺的部分的单体单元; 和含有一个或多个吸收部分的至少一个单体单元。聚合物不包含酸不稳定基团。本发明还公开了一种通过在光刻中使用本发明的抗反射涂料组合物来形成和转印浮雕图像的方法。

8. 发明授权

US07709187B2 High resolution imaging process using an in-situ image modifying layer 有权
标题翻译：使用原位图像修改层的高分辨率成像过程
公开(公告)号：US07709187B2
公开(公告)日：2010-05-04
申请号：US11551824
申请日：2006-10-23
申请人： Kaushal Patel , Wu-Song Huang , Margaret C. Lawson , Jaione Tirapu Azpiroz
发明人： Kaushal Patel , Wu-Song Huang , Margaret C. Lawson , Jaione Tirapu Azpiroz
IPC分类号： G03F7/26
CPC分类号： G03F7/095 , G03F1/56 , G03F7/70466
摘要： A method of forming a patterned material layer on a substrate. A photoresist layer is formed on the substrate followed by an image modifying material formed on the photoresist. The image modifying material is patterned to form an image modifying pattern. The image modifying pattern and underlying photoresist are then exposed to suitable radiation. The image modifying pattern modifies the image intensity within the photoresist layer beneath the image modifying pattern. The resulting pattern is then transferred into the substrate.
摘要翻译：在衬底上形成图案化材料层的方法。在基板上形成光致抗蚀剂层，然后在光致抗蚀剂上形成图像改性材料。图像修改材料被图案化以形成图像修改图案。然后将图像修改图案和下面的光致抗蚀剂暴露于合适的辐射。图像修改图案修改图像修改图案下方的光致抗蚀剂层内的图像强度。然后将所得图案转移到基底中。

9. 发明申请

US20080145793A1 High Resolution Imaging Process Using an In-Situ Image Modifying Layer 有权
标题翻译：使用原位图像修改层的高分辨率成像过程
公开(公告)号：US20080145793A1
公开(公告)日：2008-06-19
申请号：US11551824
申请日：2006-10-23
申请人： Kaushal Patel , Wu-Song Huang , Margaret C. Lawson , Jaione Tirapu Azpiroz
发明人： Kaushal Patel , Wu-Song Huang , Margaret C. Lawson , Jaione Tirapu Azpiroz
IPC分类号： G03C5/00
CPC分类号： G03F7/095 , G03F1/56 , G03F7/70466
摘要： A method of forming a patterned material layer on a substrate. A photoresist layer is formed on the substrate followed by an image modifying material formed on the photoresist. The image modifying material is patterned to form an image modifying pattern. The image modifying pattern and underlying photoresist are then exposed to suitable radiation. The image modifying pattern modifies the image intensity within the photoresist layer beneath the image modifying pattern. The resulting pattern is then transferred into the substrate.
摘要翻译：在衬底上形成图案化材料层的方法。在基板上形成光致抗蚀剂层，然后在光致抗蚀剂上形成图像改性材料。图像修改材料被图案化以形成图像修改图案。然后将图像修改图案和下面的光致抗蚀剂暴露于合适的辐射。图像修改图案修改图像修改图案下方的光致抗蚀剂层内的图像强度。然后将所得图案转移到基底中。

10. 发明授权

US07335456B2 Top coat material and use thereof in lithography processes 有权
标题翻译：面漆材料及其在光刻工艺中的应用
公开(公告)号：US07335456B2
公开(公告)日：2008-02-26
申请号：US10855045
申请日：2004-05-27
申请人： Wenjie Li , Margaret C. Lawson , Pushkara Rao Varanasi
发明人： Wenjie Li , Margaret C. Lawson , Pushkara Rao Varanasi
IPC分类号： G03F7/00 , G03F7/004
CPC分类号： G03F7/11 , G03F7/0046 , G03F7/2041 , Y10T428/3154
摘要： A top coat material for applying on top of a photoresist material is disclosed. The top coat material includes a polymer, which includes at least one fluorosulfonamide monomer unit having one of the following two structures: wherein: M is a polymerizable backbone moiety; Z is a linking moiety selected from the group consisting of —C(O)O—, —C(O)—, —OC(O)—, and —O—C(O)—C(O)—O—; R1 is selected from the group consisting of an alkylene, an arylene, a semi- or perfluorinated alkylene, and a semi- or perfluorinated arylene; p and q are 0 or 1; R2 is selected from the group consisting of hydrogen, fluorine, an alkyl group of 1 to 6 carbons, and a semi- or perfluorinated alkyl group of 1 to 6 carbons; n is an integer from 1 to 6; and R3 is selected from the group consisting of hydrogen, an alkyl, an aryl, a semi- or perfluorinated alkyl, and a semi- or perfluorinated aryl. The top coat material may be used in lithography processes, wherein the top coat material is applied on a photoresist layer. The top coat material is preferably soluble in aqueous alkaline developer. The top coat material is also preferably insoluble in water, and is therefore particularly useful in immersion lithography techniques using water as the imaging medium.
摘要翻译：公开了一种用于涂覆在光致抗蚀剂材料上的顶涂层材料。面漆材料包括聚合物，其包括至少一种具有以下两种结构之一的氟磺酰胺单体单元：其中：M是可聚合主链部分; Z是选自-C（O）O-，-C（O） - ， - OC（O） - 和-O-C（O）-C（O）-O-的连接部分; R 1选自亚烷基，亚芳基，半或全氟亚烷基，以及半或全氟化亚芳基; p和q为0或1; R 2选自氢，氟，1至6个碳的烷基和1至6个碳的半或全氟化烷基; n是1至6的整数; 和R 3 3选自氢，烷基，芳基，半或全氟烷基和半或全氟芳基。面漆材料可以用在光刻工艺中，其中将顶涂层材料施加在光致抗蚀剂层上。顶涂层材料优选可溶于含水碱性显影剂。面漆材料也优选不溶于水，因此特别适用于使用水作为成像介质的浸渍光刻技术。

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