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91. 发明授权

US08238392B2 Temperature controller for gas laser 有权
标题翻译：气体激光器温度控制器
公开(公告)号：US08238392B2
公开(公告)日：2012-08-07
申请号：US12710722
申请日：2010-02-23
申请人： Yukio Watanabe , Hideyuki Hayashi , Kouji Kakizaki , Michio Shinozaki , Hideo Hoshino
发明人： Yukio Watanabe , Hideyuki Hayashi , Kouji Kakizaki , Michio Shinozaki , Hideo Hoshino
IPC分类号： H01S3/00 , H01S3/04 , H01S3/22 , H01S3/223
CPC分类号： H01S3/0407 , F25B2400/06 , F25D17/02 , H01S3/03 , H01S3/041 , H01S3/22
摘要： A temperature controller for a gas laser which controls temperatures of a plurality of temperature-controlled apparatuses including a first temperature-controlled portion requiring a high-precision temperature-control and a second temperature-controlled portion requiring a low-precision temperature-control as compared with the first temperature-controlled portion and allowing a temperature-control with a low or high temperature as compared with the first temperature-controlled portion, comprises a first temperature control portion generating a cooling agent or a heating agent for adjusting a temperature of each first temperature-controlled portion, a second temperature control portion generating a cooling agent or a heating agent for adjusting a temperature of each second temperature-controlled portion, a first piping system connecting the first temperature control portion and each first temperature-controlled portion in parallel, and a second piping system connecting the second temperature control portion and each second temperature-controlled portion in parallel.
摘要翻译：一种用于气体激光器的温度控制器，其控制多个温度控制装置的温度，包括需要高精度温度控制的第一温度控制部分和需要低精度温度控制的第二温度控制部分与第一温度控制部分相比，第一温度控制部分与低温或高温的温度控制相比，包括产生冷却剂的第一温度控制部分或用于调节每个第一温度控制部分的温度的加热剂温度控制部分，产生冷却剂的第二温度控制部分或用于调节每个第二温度控制部分的温度的加热剂，将第一温度控制部分和第一温度控制部分并联连接的第一管道系统，以及连接第二回火的第二管道系统所述控制部分和每个第二温度控制部分并联。

92. 发明申请

US20110309260A1 CHAMBER APPARATUS AND EXTREME ULTRAVIOLET LIGHT GENERATION SYSTEM 有权
标题翻译：室外设备和极光紫外线发光系统
公开(公告)号：US20110309260A1
公开(公告)日：2011-12-22
申请号：US13122354
申请日：2011-03-11
申请人： Toshihiro Nishisaka , Yukio Watanabe , Tamotsu Abe , Osamu Wakabayashi
发明人： Toshihiro Nishisaka , Yukio Watanabe , Tamotsu Abe , Osamu Wakabayashi
IPC分类号： G21K5/00 , G01J1/42
CPC分类号： H05G2/008 , G03B27/54 , G03F7/70033 , G03F7/70175 , G03F7/70916 , H05G2/003
摘要： A chamber apparatus used with an external apparatus having an obscuration region may include: a chamber in which extreme ultraviolet light is generated; a collector mirror provided in the chamber for collecting the extreme ultraviolet light; a support for securing the collector mirror to the chamber; and an output port provided to the chamber for allowing the extreme ultraviolet light collected by the collector mirror to be introduced therethrough into the external apparatus.
摘要翻译：与具有遮蔽区域的外部设备一起使用的室设备可以包括：产生极紫外光的室; 设置在室中的用于收集极紫外光的收集器反射镜; 用于将收集器镜固定到腔室的支撑件; 以及设置到室的输出端口，用于允许由集光镜收集的极紫外光通过其引入外部设备。

93. 发明申请

US20080268558A1 Semiconductor Light Emitting Element and Method for Manufacturing the Same 审中-公开
公开(公告)号：US20080268558A1
公开(公告)日：2008-10-30
申请号：US11875759
申请日：2007-10-19
申请人： Hideto Sugawara , Yukio Watanabe , Hirohisa Abe , Kuniaki Konno
发明人： Hideto Sugawara , Yukio Watanabe , Hirohisa Abe , Kuniaki Konno
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/0079 , H01L33/16 , H01L33/22 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/10155 , H01L2924/00014 , H01L2924/00
摘要： A high-luminance light emitting element is manufactured by a method comprising: forming a light emitting layer on a first surface of a GaP substrate including the first surface and a second surface opposed to the first surface and having an area smaller than the first area, the light emitting layer emitting light of a wavelength λ permitted to pass through the GaP substrate; forming a plurality of side surfaces on the GaP substrate to be respectively aslant by substantially the same angle to become narrower toward the second surface; and forming a plurality of depressions and protrusions as high as 0.1λ to 3λ on the side surfaces.

94. 发明申请

US20080008640A1 Cluster-Free Amorphous Silicon Film, and Method and Apparatus for Producing the Same 审中-公开
标题翻译：无簇无定形硅膜及其制造方法和装置
公开(公告)号：US20080008640A1
公开(公告)日：2008-01-10
申请号：US11661053
申请日：2005-08-17
申请人： Yukio Watanabe , Masaharu Shiratani , Kazunori Koga
发明人： Yukio Watanabe , Masaharu Shiratani , Kazunori Koga
IPC分类号： H01L21/205 , C01B33/027 , H01L31/04 , C23C16/24
CPC分类号： C23C16/24 , C23C16/45502 , C23C16/509 , H01L21/0245 , H01L21/02532 , H01L21/0262 , H01L31/03767 , H01L31/202 , Y02E10/50 , Y02P70/521
摘要： The intention is to clarify characteristics of a cluster-free amorphous silicon film which is practically produceable without incorporation of large clusters having a size of 1 nm or more, and provide a method and an apparatus for producing the amorphous silicon film. In the cluster-free amorphous silicone (a-Si:H) film, an in-film Si—H2 bond density is 10−2 atomic % or less, and an in-film volume fraction of the large clusters is 10−1% or less. The a-Si:H film is produced by depositing, on a substrate, a deposition material in a plasma flow of any one of a silane gas, a disilane gas and a gas obtained by diluting a silane or disilane gas with one or a combination of two or more selected from the group consisting of hydrogen, Ar, He, Ne and Xe. The a-Si:H film has prominent characteristics, such that: a light-induced defect density is reduced from 2×1016 cm−3 or more in conventional a-Si:H films to substantially zero; a stabilized efficiency (%), i.e., a light-energy conversion efficiency, is increased from 9% at the highest in existing a-Si:H films up to 14% or more; and a light-induced degradation rate, i.e., [(initial efficiency−stabilized efficiency)/initial efficiency]×100%, is reduced from 20% at the lowest in the existing a-Si:H films to substantially zero.
摘要翻译：本发明是为了阐明实际上可产生的无簇非晶硅膜的特征，而不引入具有1nm或更大尺寸的大簇的聚簇，并提供一种制造非晶硅膜的方法和装置。在无簇无定形硅氧烷（a-Si：H）膜中，膜内Si-H 2键密度为原子百分比的10％以下，大簇的膜内体积分数为10〜1％以下。 a-Si：H膜通过在硅烷气体，乙硅烷气体和通过用一种或组合稀释硅烷或乙硅烷气体获得的气体中的任何一种的等离子体流中沉积在基板上的沉积材料来制备选自氢，Ar，He，Ne和Xe中的两种或更多种。 a-Si：H膜具有突出的特性，使得：在常规a-Si：H膜中，光诱导缺陷密度从2×10 16 cm -3以下降低， H电影基本为零; 稳定效率（％），即光能转换效率从现有a-Si：H膜最高的14％增加到14％以上; 并且光诱导的降解速率，即[（初始效率稳定效率）/初始效率]×100％从现有的a-Si：H膜中最低的20％降低到基本上为零。

95. 发明申请

US20070022277A1 Method and system for an enhanced microprocessor 审中-公开
标题翻译：增强微处理器的方法和系统
公开(公告)号：US20070022277A1
公开(公告)日：2007-01-25
申请号：US11185462
申请日：2005-07-20
申请人： Kenji Iwamura , Takeki Osanai , Yukio Watanabe
发明人： Kenji Iwamura , Takeki Osanai , Yukio Watanabe
IPC分类号： G06F9/40
CPC分类号： G06F9/30181 , G06F9/30189 , G06F9/3802 , G06F9/383 , G06F9/3836 , G06F9/3838 , G06F9/3857 , G06F9/3885
摘要： Systems and methods for modes of operation for processing data are disclosed. While executing a program in one mode the hazard checking logic present in the microprocessor system may be utilized to check or ameliorate the hazards caused by the execution of this program. However, when a program does not need this hazard checking, the microprocessor may execute this program in a mode where some portion of the hazard checking logic of the microprocessor may not be utilized in conjunction with the execution of this program. This allows the higher speed execution of these types of programs by eliminating checking for dependencies, the detection of false load/store dependencies, the insertion of unnecessary stalls into the execution pipeline of the microprocessor or other hardware operations. Furthermore, by reducing the use of hazard detection logic a decrease in power consumption may also be effectuated.
摘要翻译：公开了用于处理数据的操作模式的系统和方法。当以一种模式执行程序时，微处理器系统中存在的危险检查逻辑可用于检查或改善由该程序的执行引起的危害。然而，当程序不需要这种危险检查时，微处理器可以以这种方式执行该程序，其中微处理器的危险检查逻辑的某些部分可能不与该程序的执行结合使用。这允许通过消除检查依赖关系，检测虚假加载/存储相关性，将不必要的停顿插入微处理器的执行流水线或其他硬件操作来更快速地执行这些类型的程序。此外，通过减少危害检测逻辑的使用，还可以实现功耗的降低。

96. 发明申请

US20060105583A1 Formation technology of nano-particle films having low dielectric constant 审中-公开
标题翻译：具有低介电常数的纳米颗粒膜的形成技术
公开(公告)号：US20060105583A1
公开(公告)日：2006-05-18
申请号：US10990562
申请日：2004-11-17
申请人： Shingo Ikeda , Nobuo Matsuki , Yoshinori Morisada , Yukio Watanabe , Masaharu Shiratani , Kazunori Koga , Shota Nunomura
发明人： Shingo Ikeda , Nobuo Matsuki , Yoshinori Morisada , Yukio Watanabe , Masaharu Shiratani , Kazunori Koga , Shota Nunomura
IPC分类号： H01L21/31
CPC分类号： C23C16/509 , C23C16/401 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02274 , H01L21/0228 , H01L21/0234 , H01L21/31695
摘要： A method for forming a low dielectric constant film includes the steps of: introducing reaction gas comprising an organo Si gas and an inert gas into a reactor of a capacitively-coupled CVD apparatus; adjusting a size of fine particles being generated in the vapor phase to a nanometer order size as a function of a plasma discharge period inside the reactor; and depositing fine particles generated on a substrate being placed inside the reactor.
摘要翻译：形成低介电常数膜的方法包括以下步骤：将包含有机硅气体和惰性气体的反应气体引入电容耦合CVD设备的反应器中; 将在气相中产生的细颗粒的尺寸调节为纳米级尺寸作为反应器内的等离子体放电周期的函数; 并沉积在放置在反应器内的衬底上产生的微粒。

97. 发明申请

US20050147765A1 Method for producing particles with diamond structure 审中-公开
标题翻译：用金刚石结构生产颗粒的方法
公开(公告)号：US20050147765A1
公开(公告)日：2005-07-07
申请号：US10499260
申请日：2002-11-22
申请人： Volker Dose , Gregor Morfill , Vladimir Fortov , Noriyoshi Sato , Yukio Watanabe
发明人： Volker Dose , Gregor Morfill , Vladimir Fortov , Noriyoshi Sato , Yukio Watanabe
IPC分类号： C23C16/26 , C23C16/27 , C23C16/44 , C30B25/10 , C30B29/04 , C30B30/08 , B05D1/22
CPC分类号： C30B30/08 , C23C16/27 , C23C16/4417 , C30B25/105 , C30B29/04
摘要： A method for producing particles having a monocrystalline diamond structure, comprises the steps of operating a plasma chamber (100) containing a reaction gas with at least one carbon compound and generating a reactive plasma, providing seed particles in said plasma chamber (100) which are arranged under the influence of external gravity compensating forces within the reactive plasma, and polydirectional growing carbon with diamond structure on said seed particles, so that growing diamond containing particles are formed.
摘要翻译：一种用于生产具有单晶金刚石结构的颗粒的方法，包括以下步骤：将含有反应气体的等离子体室（100）与至少一种碳化合物一起操作并产生反应性等离子体，在所述等离子体室（100）中提供种子颗粒，在反应性等离子体内的外部重力补偿力的影响下排列，并且在所述种子颗粒上形成具有金刚石结构的多向生长碳，从而形成生长的含金刚石的颗粒。

98. 发明授权

US06846686B2 Semiconductor light-emitting device and method of manufacturing the same 有权
标题翻译：半导体发光装置及其制造方法
公开(公告)号：US06846686B2
公开(公告)日：2005-01-25
申请号：US10429462
申请日：2003-05-05
申请人： Ryo Saeki , Hideto Sugawara , Yukio Watanabe , Tamotsu Jitosho
发明人： Ryo Saeki , Hideto Sugawara , Yukio Watanabe , Tamotsu Jitosho
IPC分类号： H01L33/42 , H01L21/205 , H01L33/00 , H01L33/06 , H01L33/12 , H01L33/14 , H01L33/16 , H01L33/30 , H01L21/00
CPC分类号： H01L33/16 , H01L33/0079 , H01L33/30
摘要： A semiconductor light-emitting device, including a first substrate of a first conductivity type, a first bonding layer provided on the first substrate and consisting essentially of a GaP material of the first conductivity type, a second bonding layer provided on the first bonding layer, coincident with the first bonding layer in the planar direction of the crystal, having the first conductivity type, and consisting essentially of a material represented by a formula InxGayP, where 0≦x, y≦1, and x+y=1, and a light-emitting layer comprising a first cladding layer, an active layer, and a second cladding layer, which are successively provided on the second bonding layer, each of the active layer and first and second cladding layers consisting essentially of a material represented by a formula InxGayAlzP, where x+y+z=1, and 0≦x, y, z≦1.
摘要翻译：一种半导体发光器件，包括第一导电类型的第一衬底，设置在第一衬底上并基本上由第一导电类型的GaP材料组成的第一接合层，设置在第一接合层上的第二接合层，与晶体的平面方向上的第一结合层重合，具有第一导电类型，并且基本上由由式InxGayP表示的材料组成，其中0 <= x，y <= 1，x + y = 1，以及连续设置在所述第二接合层上的包括第一包层，有源层和第二包层的发光层，所述有源层和所述第一和第二包层中的每一个基本上由以公式InxGayAlzP，其中x + y + z = 1，0 <= X，Y，Z＆LE; 1。

99. 发明授权

US06808380B1 Hardness taper tube and production method and device therefor 有权
标题翻译：硬度锥管及其制造方法及装置
公开(公告)号：US06808380B1
公开(公告)日：2004-10-26
申请号：US10019658
申请日：2002-01-02
申请人： Yukio Watanabe , Takeshi Kizuka
发明人： Yukio Watanabe , Takeshi Kizuka
IPC分类号： B29C4700
CPC分类号： B29C47/62 , A61M25/001 , B29C47/0023 , B29C47/02 , B29C47/10 , B29C47/1054 , B29C47/28 , B29C47/362 , B29C47/6006
摘要： An apparatus for manufacturing stiffness-taper tubing includes a die having an extrusion hole, a die holder for holding the die, and a mandrel mounted inside the die holder and that fits in the extrusion hole. The apparatus forms stiffness-taper tubing by switching between and supplying resins having different stiffnesses over the mandrel from a plurality of resin-supply ports formed in the die holder such that the stiffness gradually changes in the lengthwise direction. A mandrel insertion hole connecting to the extrusion hole is formed in the die holder and the mandrel is mounted in this mandrel insertion hole. The plurality of resin-supply ports open to a cylindrical space formed between the inner surface of the mandrel insertion hole and the outer surface of the mandrel at a position separated from the extrusion hole in the die, and the plurality of resins flow together in this space.
摘要翻译：用于制造刚度锥形管的装置包括具有挤压孔的模具，用于保持模具的模具夹持器和安装在模具夹持器内并适合于挤出孔中的心轴。该设备通过在模具座中形成的多个树脂供给口之间切换并且在心轴上提供具有不同刚度的树脂，从而刚度在长度方向上逐渐变化而形成刚度锥形管。在模座中形成连接到挤压孔的芯棒插入孔，心轴安装在该心轴插入孔中。所述多个树脂供给口与形成在所述芯棒插入孔的内表面和所述心轴的外表面之间的圆筒形空间开放，所述圆筒状空间与所述模具中的所述挤出孔分离，所述多个树脂在该空间。

100. 发明授权

US06565695B2 Transfer sheet for electrophotographic printer 失效
公开(公告)号：US06565695B2
公开(公告)日：2003-05-20
申请号：US09794103
申请日：2001-02-28
申请人： Tatsuo Takeuchi , Yukio Watanabe , Kenji Nakama , Shinichi Morisuna
发明人： Tatsuo Takeuchi , Yukio Watanabe , Kenji Nakama , Shinichi Morisuna
IPC分类号： B41M500
CPC分类号： B41M5/0355 , D06P5/003 , G03G7/00 , G03G7/0093 , G03G13/16 , Y10T428/24802
摘要： The transfer sheet comprises a support and a transfer layer capable of separating from the support and of fixing a toner image formed by an electrophotographic printer, wherein an average value of a surface roughness of the transfer layer is 0.5 to 3.5 &mgr;m. The transfer layer may comprise a thermoplastic resin and a fine particle. A weight ratio of the thermoplastic resin to the fine particle is about 50/50 to 99/1. The thermoplastic resin may be a thermoplastic polyurethane-series resin, and the fine particle may be a polyethylene fine particle having a mean particle size of about 1 to 100 &mgr;m.

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