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1. 发明申请

US20060269690A1 Formation technology for nanoparticle films having low dielectric constant 审中-公开
标题翻译：具有低介电常数的纳米颗粒膜的形成技术
公开(公告)号：US20060269690A1
公开(公告)日：2006-11-30
申请号：US11139311
申请日：2005-05-27
申请人： Yukio Watanabe , Masaharu Shiratani , Kazunori Koga , Shota Nunomura , Shingo Ikeda , Nobuo Matsuki , Atsuki Fukazawa
发明人： Yukio Watanabe , Masaharu Shiratani , Kazunori Koga , Shota Nunomura , Shingo Ikeda , Nobuo Matsuki , Atsuki Fukazawa
IPC分类号： H05H1/24 , C23C16/00
CPC分类号： C23C16/401 , B82Y30/00 , H01L21/02126 , H01L21/02167 , H01L21/02203 , H01L21/02216 , H01L21/02274 , H01L21/02337 , H01L21/02348 , H01L21/3121 , H01L21/3148 , H01L21/31633 , H01L21/7682 , H01L2221/1047
摘要： A method for forming a low dielectric constant film includes the steps of: introducing reaction gas comprising an organo Si gas and an inert gas into a reactor of a capacitively-coupled CVD apparatus; adjusting a size of fine particles being generated in the vapor phase to a nanometer order size as a function of a plasma discharge period inside the reactor; and depositing fine particles generated on a substrate being placed between upper and lower electrodes inside the reactor while controlling a temperature gradient between the substrate and the upper electrode at about 100° C./cm or less.
摘要翻译：形成低介电常数膜的方法包括以下步骤：将包含有机硅气体和惰性气体的反应气体引入电容耦合CVD设备的反应器中; 将在气相中产生的细颗粒的尺寸调节为纳米级尺寸作为反应器内的等离子体放电周期的函数; 并且将在基板上产生的细颗粒沉积在反应器内部的上下电极之间，同时以约100℃/ cm以下的方式控制基板和上电极之间的温度梯度。

2. 发明申请

US20120315684A1 Plasma Oxidation-Reduction Method, Method for Promoting Plant/Animal Growth Using the Same, and Plasma-Generating Device for Use in Method for Promoting Plant/Animal Growth 审中-公开
标题翻译：等离子体氧化还原方法，使用该方法促进植物/动物生长的方法和用于促进植物/动物生长的方法中的等离子体发生装置
公开(公告)号：US20120315684A1
公开(公告)日：2012-12-13
申请号：US13575986
申请日：2011-01-31
申请人： Nobuya Hayashi , Akari Nakahigashi , Masaharu Shiratani , Kazunori Koga
发明人： Nobuya Hayashi , Akari Nakahigashi , Masaharu Shiratani , Kazunori Koga
IPC分类号： C12N13/00 , A01G7/04 , B01J19/12
CPC分类号： A01H3/00 , H05H1/2406 , H05H2001/2431
摘要： Provided is a plasma oxidation-reduction method with which it is possible to control the structure of amino acids and proteins with high and stable reproducibility, by using plasma in order to control the amino acids and proteins that make up a living body, particularly by using plasma in order to oxidize or reduce amino acids and proteins. Also provided are a method for promoting plant/animal growth using the plasma oxidation-reduction method, and a plasma-generating device for use in the method for promoting plant/animal growth. Amino acids or proteins are oxidized or reduced in the plasma oxidation-reduction method by using an active oxygen species or active hydrogen in the plasma. Preferably, the active oxygen species comprises any one of singlet oxygen atoms, excited oxygen molecules, or hydroxyl radicals, and the active hydrogen comprises excited hydrogen atoms.
摘要翻译：提供了一种等离子体氧化还原方法，可以通过使用等离子体来控制构成活体的氨基酸和蛋白质，特别是通过使用等离子体氧化还原方法，可以以高而稳定的再现性来控制氨基酸和蛋白质的结构血浆以氧化或还原氨基酸和蛋白质。还提供了使用等离子体氧化还原法促进植物/动物生长的方法，以及用于促进植物/动物生长的方法中的等离子体产生装置。通过在等离子体中使用活性氧或活性氢，在等离子体氧化 - 还原方法中氧化或还原氨基酸或蛋白质。优选地，活性氧物质包括单线态氧原子，被激发的氧分子或羟基自由基中的任何一种，活性氢包括激发的氢原子。

3. 发明申请

US20080008640A1 Cluster-Free Amorphous Silicon Film, and Method and Apparatus for Producing the Same 审中-公开
标题翻译：无簇无定形硅膜及其制造方法和装置
公开(公告)号：US20080008640A1
公开(公告)日：2008-01-10
申请号：US11661053
申请日：2005-08-17
申请人： Yukio Watanabe , Masaharu Shiratani , Kazunori Koga
发明人： Yukio Watanabe , Masaharu Shiratani , Kazunori Koga
IPC分类号： H01L21/205 , C01B33/027 , H01L31/04 , C23C16/24
CPC分类号： C23C16/24 , C23C16/45502 , C23C16/509 , H01L21/0245 , H01L21/02532 , H01L21/0262 , H01L31/03767 , H01L31/202 , Y02E10/50 , Y02P70/521
摘要： The intention is to clarify characteristics of a cluster-free amorphous silicon film which is practically produceable without incorporation of large clusters having a size of 1 nm or more, and provide a method and an apparatus for producing the amorphous silicon film. In the cluster-free amorphous silicone (a-Si:H) film, an in-film Si—H2 bond density is 10−2 atomic % or less, and an in-film volume fraction of the large clusters is 10−1% or less. The a-Si:H film is produced by depositing, on a substrate, a deposition material in a plasma flow of any one of a silane gas, a disilane gas and a gas obtained by diluting a silane or disilane gas with one or a combination of two or more selected from the group consisting of hydrogen, Ar, He, Ne and Xe. The a-Si:H film has prominent characteristics, such that: a light-induced defect density is reduced from 2×1016 cm−3 or more in conventional a-Si:H films to substantially zero; a stabilized efficiency (%), i.e., a light-energy conversion efficiency, is increased from 9% at the highest in existing a-Si:H films up to 14% or more; and a light-induced degradation rate, i.e., [(initial efficiency−stabilized efficiency)/initial efficiency]×100%, is reduced from 20% at the lowest in the existing a-Si:H films to substantially zero.
摘要翻译：本发明是为了阐明实际上可产生的无簇非晶硅膜的特征，而不引入具有1nm或更大尺寸的大簇的聚簇，并提供一种制造非晶硅膜的方法和装置。在无簇无定形硅氧烷（a-Si：H）膜中，膜内Si-H 2键密度为原子百分比的10％以下，大簇的膜内体积分数为10〜1％以下。 a-Si：H膜通过在硅烷气体，乙硅烷气体和通过用一种或组合稀释硅烷或乙硅烷气体获得的气体中的任何一种的等离子体流中沉积在基板上的沉积材料来制备选自氢，Ar，He，Ne和Xe中的两种或更多种。 a-Si：H膜具有突出的特性，使得：在常规a-Si：H膜中，光诱导缺陷密度从2×10 16 cm -3以下降低， H电影基本为零; 稳定效率（％），即光能转换效率从现有a-Si：H膜最高的14％增加到14％以上; 并且光诱导的降解速率，即[（初始效率稳定效率）/初始效率]×100％从现有的a-Si：H膜中最低的20％降低到基本上为零。

4. 发明申请

US20060105583A1 Formation technology of nano-particle films having low dielectric constant 审中-公开
标题翻译：具有低介电常数的纳米颗粒膜的形成技术
公开(公告)号：US20060105583A1
公开(公告)日：2006-05-18
申请号：US10990562
申请日：2004-11-17
申请人： Shingo Ikeda , Nobuo Matsuki , Yoshinori Morisada , Yukio Watanabe , Masaharu Shiratani , Kazunori Koga , Shota Nunomura
发明人： Shingo Ikeda , Nobuo Matsuki , Yoshinori Morisada , Yukio Watanabe , Masaharu Shiratani , Kazunori Koga , Shota Nunomura
IPC分类号： H01L21/31
CPC分类号： C23C16/509 , C23C16/401 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02274 , H01L21/0228 , H01L21/0234 , H01L21/31695
摘要： A method for forming a low dielectric constant film includes the steps of: introducing reaction gas comprising an organo Si gas and an inert gas into a reactor of a capacitively-coupled CVD apparatus; adjusting a size of fine particles being generated in the vapor phase to a nanometer order size as a function of a plasma discharge period inside the reactor; and depositing fine particles generated on a substrate being placed inside the reactor.
摘要翻译：形成低介电常数膜的方法包括以下步骤：将包含有机硅气体和惰性气体的反应气体引入电容耦合CVD设备的反应器中; 将在气相中产生的细颗粒的尺寸调节为纳米级尺寸作为反应器内的等离子体放电周期的函数; 并沉积在放置在反应器内的衬底上产生的微粒。

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