会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 92. 发明授权
    • X-ray projection exposure apparatus and a device manufacturing method
    • X射线投影曝光装置和装置制造方法
    • US06310934B1
    • 2001-10-30
    • US09342897
    • 1999-06-29
    • Shinichi HaraMasami Tsukamoto
    • Shinichi HaraMasami Tsukamoto
    • G21K500
    • G03F7/70708G03F7/70875G21K5/10
    • An X-ray projection exposure apparatus includes a mask chuck for holding a reflection X-ray mask having a mask pattern thereon, a void being formed between the mask and the mask chuck, a wafer chuck for holding a wafer onto which the mask pattern is transferred, an X-ray illuminating system for illuminating the reflection X-ray mask, held by the mask chuck, with X-rays, an X-ray projection optical system for projecting the mask pattern of the reflection X-ray mask onto the wafer held by the wafer chuck with a predetermined magnification and a supply for supplying the void formed between the mask and the mask chuck with a cooling gas for cooling the mask.
    • X射线投影曝光装置包括:掩模卡盘,用于保持其上具有掩模图案的反射X射线掩模,在掩模和掩模卡盘之间形成空隙;晶片卡盘,用于保持掩模图案是 转移了用于照射由掩模卡盘保持的反射X射线掩模的X射线照射系统的X射线,用于将反射X射线掩模的掩模图案投影到晶片上的X射线投影光学系统 由晶片卡盘以预定的放大率保持,以及用于将形成在掩模和掩模卡盘之间的空隙供给用于冷却掩模的冷却气体的供给。
    • 93. 发明授权
    • Device manufacturing method with transfer magnification adjustment to
correct thermal distortion of substrate
    • 装置制造方法采用传输倍率调整校正基板的热变形
    • US6087053A
    • 2000-07-11
    • US72133
    • 1998-05-05
    • Shinichi Hara
    • Shinichi Hara
    • G03F7/20H01L21/027H01L21/68G03F9/00
    • G03F7/70425G03F7/70241G03F7/70258G03F7/70783
    • An exposure method includes the steps of transferring, by exposure, a pattern formed on an original to different shot regions on a substrate sequentially, and performing, during exposure of a certain shot, at least one of (i) adjusting a relative positional relation between the original and the substrate, with respect to a direction effective to correct translation of a transfer region of the substrate due to thermal distortion thereof, and (ii) adjusting a transfer magnification of the pattern of the original to the substrate so as to correct enlargement of the transfer region due to thermal distortion of the substrate. In one preferred form, the adjustment is made in accordance with a correction table related to thermal expansion of the substrate during exposure and being prepared on the basis of one of a calculation and a preparatory exposure experiment. In another preferred form, the transfer magnification is adjusted by deforming the original, and in a further preferred form, the transfer magnification is adjusted by adjusting a projection optical system for projecting the pattern of the original to the substrate.
    • 曝光方法包括以下步骤:通过曝光将形成在原稿上的图案顺序地转印到基板上的不同拍摄区域,并且在曝光期间执行以下至少之一:(i)调整相对位置关系 相对于有效地校正由于其热变形而导致的基板的转印区域的平移的方向的原稿和基板,以及(ii)调整原稿的图案到基板的转印倍率,以校正放大 由于基板的热变形而导致的转印区域。 在一个优选形式中,根据在曝光期间与衬底的热膨胀相关的校正表进行调整,并且基于计算和预备曝光实验之一进行准备。 在另一优选形式中,通过使原稿变形来调节转印倍率,并且在另一优选形式中,通过调整用于将原稿的图案投影到基底的投影光学系统来调节转印倍率。