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    • 7. 发明授权
    • X-ray projection exposure apparatus and a device manufacturing method
    • X射线投影曝光装置和装置制造方法
    • US06310934B1
    • 2001-10-30
    • US09342897
    • 1999-06-29
    • Shinichi HaraMasami Tsukamoto
    • Shinichi HaraMasami Tsukamoto
    • G21K500
    • G03F7/70708G03F7/70875G21K5/10
    • An X-ray projection exposure apparatus includes a mask chuck for holding a reflection X-ray mask having a mask pattern thereon, a void being formed between the mask and the mask chuck, a wafer chuck for holding a wafer onto which the mask pattern is transferred, an X-ray illuminating system for illuminating the reflection X-ray mask, held by the mask chuck, with X-rays, an X-ray projection optical system for projecting the mask pattern of the reflection X-ray mask onto the wafer held by the wafer chuck with a predetermined magnification and a supply for supplying the void formed between the mask and the mask chuck with a cooling gas for cooling the mask.
    • X射线投影曝光装置包括:掩模卡盘,用于保持其上具有掩模图案的反射X射线掩模,在掩模和掩模卡盘之间形成空隙;晶片卡盘,用于保持掩模图案是 转移了用于照射由掩模卡盘保持的反射X射线掩模的X射线照射系统的X射线,用于将反射X射线掩模的掩模图案投影到晶片上的X射线投影光学系统 由晶片卡盘以预定的放大率保持,以及用于将形成在掩模和掩模卡盘之间的空隙供给用于冷却掩模的冷却气体的供给。
    • 10. 发明授权
    • X-ray reduction exposure apparatus and device manufacturing method using
the same
    • X射线减少曝光装置及其制造方法
    • US5995582A
    • 1999-11-30
    • US835721
    • 1997-04-10
    • Shigeru TerashimaMasami Tsukamoto
    • Shigeru TerashimaMasami Tsukamoto
    • G21K5/02G03F7/20G21K1/06H01L21/027G21K5/00
    • G03F7/70891G21K1/06
    • A deflection mirror is disposed before an X-ray mask so as to reflect an X-ray beam and to project it to the X-ray mask. The X-ray mask is disposed opposed to a wafer with a distance D therebetween, and the X-ray beam reflected by the X-ray mask is projected onto the wafer through a reduction projection optical system. The deflecting mirror is disposed, in an example, at a position satisfying a relation D>L>d/(tan .delta.1+tan .delta.2) where L is the distance from the X-ray mask to an edge of the deflection mirror closer to the path of the X-ray beam reflected by the X-ray mask, d is the width of irradiation of the X-ray beam upon the X-ray mask, and .delta.1 and .delta.2 are incidence angles of the X-ray beam at upper and lower edges of the irradiation width d, respectively, upon the X-ray mask. This assures a compact structure wherein, even when a wafer of a large diameter is used, illumination light to the mask is not intercepted.
    • 偏转镜设置在X射线掩模之前,以便反射X射线束并将其投影到X射线掩模。 X射线掩模与其间具有距离D的晶片相对设置,并且由X射线掩模反射的X射线束通过还原投影光学系统投影到晶片上。 偏转镜例如设置在满足关系D> L> d /(tanδ1 +tanδ2)的位置处,其中L是从X射线掩模到偏转镜的边缘的距离更近 到由X射线掩模反射的X射线束的路径,d是X射线掩模上的X射线束的照射宽度,δ1和δ2是X射线的入射角 在X射线掩模上分别照射宽度d的上边缘和下边缘。 这确保了紧凑的结构,其中即使当使用大直径的晶片时,不遮挡对掩模的照明光。