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    • 91. 发明授权
    • Double rie damascene process for nose length control
    • 用于鼻长度控制的双重镶嵌工艺
    • US08257597B1
    • 2012-09-04
    • US12717090
    • 2010-03-03
    • Lijie GuanChangqing ShiMing JiangYun-Fei Li
    • Lijie GuanChangqing ShiMing JiangYun-Fei Li
    • B44C1/22
    • G11B5/3163G11B5/3116Y10T29/49021Y10T29/49048
    • Methods of forming a write pole are disclosed. A first photomask having a first opening over one of a yoke region and a pole tip region of the write pole is formed over an insulation layer having an insulator material. A first etch process is performed on the insulation layer via the first opening, the first etch process removing the insulator material from a corresponding one of the yoke region and the pole tip region. A second photomask having a second opening over the other one of the yoke region and the pole tip region is formed over the insulation layer. A second etch process is performed on the insulation layer via the second opening, the second etch process removing the insulator material from a corresponding one of the yoke region and the pole tip region.
    • 公开了形成写极的方法。 在具有绝缘体材料的绝缘层上形成第一光掩模,其具有位于写磁极的磁轭区域和极尖区域之一上的第一开口。 通过第一开口在绝缘层上执行第一蚀刻工艺,第一蚀刻工艺从磁轭区域和极尖区域中的对应的一个去除绝缘体材料。 在绝缘层上形成第二光掩模,该第二光掩模具有位于轭区域和极尖区域另一个之上的第二开口。 经由第二开口在绝缘层上执行第二蚀刻工艺,第二蚀刻工艺从磁轭区域和极尖区域中的对应的一个去除绝缘体材料。
    • 92. 发明授权
    • Perpendicular magnetic write head with a thin wrap around magnetic shield
    • 垂直磁写头与磁屏蔽薄环绕
    • US08000059B2
    • 2011-08-16
    • US11955305
    • 2007-12-12
    • Ming JiangChangqing Shi
    • Ming JiangChangqing Shi
    • G11B5/11G11B5/23
    • G11B5/3116G11B5/1278G11B5/315
    • A magnetic write head for perpendicular magnetic recording having a thin wrap-around magnetic shield. The small thickness and forming method of the thin wrap-around magnetic shield allow it to be electroplated using a thin photoresist frame mask. The thin photoresist frame mask has better critical dimension and straight wall control than a thicker mask, which allows the wrap-around magnetic shield to be constructed with much more straight and uniform back edge for shield throat height control than is possible when forming a thicker (i.e. taller) shield. The thin wrap-around magnetic shield can be stitched to a trailing return pole to avoid magnetic saturation of the wrap-around shield.
    • 用于垂直磁记录的磁写头,具有薄的环绕磁屏蔽。 薄环绕磁屏蔽的小厚度和形成方法允许其使用薄的光致抗蚀剂框架掩模进行电镀。 薄的光致抗蚀剂框架掩模具有比较厚的掩模更好的临界尺寸和直壁控制,这使得环绕的磁屏蔽件构造成具有更加直线和均匀的后边缘,用于在形成更厚的( 即更高)的盾牌。 薄环绕磁屏蔽可以缝合到尾部返回极,以避免环绕屏蔽的磁饱和。
    • 94. 发明授权
    • Perpendicular magnetic recording write head with magnetic shields separated by nonmagnetic layers
    • 垂直磁记录磁头,磁屏蔽由非磁性层分隔
    • US07920358B2
    • 2011-04-05
    • US11952019
    • 2007-12-06
    • Ming JiangChangqing Shi
    • Ming JiangChangqing Shi
    • G11B5/147
    • G11B5/1278G11B5/3116G11B5/315
    • A perpendicular magnetic recording write head that may be used in magnetic recording disk drives has a magnetic write pole (WP) with an end that is generally the same width as the width of the data tracks on the disk. A trailing shield (TS) is spaced from the WP in the along-the-track direction, a pair of side shields are located on opposite sides of the WP in the cross-track direction, and an optional leading shield (LS) is located on the opposite side of the WP from the TS in the along-the-track direction. The TS, side shields and LS are formed of magnetically permeable soft ferromagnetic material and are separated from each other by nonmagnetic separation layers. The TS, side shields and LS each has a throat height (TH) thickness in its region facing the WP. The throat heights for the shields may be different.
    • 可用于磁记录盘驱动器的垂直磁记录写头具有磁写磁极(WP),其端部的宽度通常与磁盘上数据磁道的宽度相同。 后沿屏蔽(TS)沿着沿轨道方向与WP间隔开,一对侧屏蔽沿着横向方向位于WP的相对侧上,并且可选择的前屏蔽(LS)位于 在WP的相对侧沿着TS沿着轨道方向。 TS,侧屏蔽和LS由导磁软铁磁材料形成,并通过非磁性分离层彼此分离。 TS,侧护罩和LS在其面向WP的区域中具有喉部高度(TH)厚度。 盾牌的喉咙高度可能不同。
    • 97. 发明申请
    • ELECTRICAL LAPPING GUIDE FOR FLARE POINT CONTROL AND TRAILING SHIELD THROAT HEIGHT IN A PERPENDICULAR MAGNETIC WRITE HEAD
    • 用于磁头控制和导航屏蔽的电气导线指南在一个完整的磁性写头
    • US20080144215A1
    • 2008-06-19
    • US11611824
    • 2006-12-15
    • Wen-Chien David HsiaoMing JiangVladimir NikitinAron PentekYi Zheng
    • Wen-Chien David HsiaoMing JiangVladimir NikitinAron PentekYi Zheng
    • G11B5/147G11B5/23
    • G11B5/3169G11B5/1278G11B5/3163G11B5/3166G11B5/3173G11B5/6005Y10T29/49021Y10T29/49039Y10T29/49043Y10T29/49044Y10T29/49046Y10T29/49048Y10T29/49052
    • A method for constructing a magnetic write head using an electrical lapping guide to carefully control critical dimensions dining a lapping operation used to define an air bearing surface. The lapping guide is photolithographically patterned in a common photolithographic step with another write head structure so that special relation between the lapping guide and critical dimensions of the write head structure can be carefully maintained. For example, the electrical lapping guide can be patterned in a common photolithographic step as the write pole so that the location of the flare point can he carefully controlled with respect to the location of the lapping guide. A stitched flare structure can also be built together with the electrical lapping guide, then a self-aligned shield can be further built over this stitched flare structure so that both flare point and shield throat can be controlled tightly together by this electrical lapping guide during lapping process. Similarly, the lapping guide can be formed in a common photolithographic step with a trailing shield, so that a critical dimension such as throat height of the trailing shield can be carefully controlled with respect to the electrical lapping guide.
    • 一种使用电研磨导向器构造磁性写入头的方法,以仔细控制关键尺寸,以用于界定空气轴承表面的研磨操作。 研磨导向器在具有另一写头结构的普通光刻步骤中光刻图案化,使得研磨引导件与写入头结构的关键尺寸之间的特殊关系可以被小心地保持。 例如,电研磨引导件可以以普通的光刻步骤图案化为写入极,使得可以相对于研磨导轨的位置仔细地控制闪光点的位置。 缝合的火炬结构也可以与电研磨导轨一起构建,然后可以在该缝合的火炬结构上进一步构建自对准的屏蔽,使得在研磨过程中这种电研磨引导件可以将喇叭口和屏蔽喉两者紧密地一起控制 处理。 类似地,研磨引导件可以在具有后挡板的普通光刻步骤中形成,使得可以相对于电研磨导轨小心地控制关键尺寸,例如后挡板的喉部高度。
    • 98. 发明申请
    • Process to open connection vias on a planarized surface
    • 在平坦化表面上打开连接通孔的过程
    • US20070245557A1
    • 2007-10-25
    • US11411555
    • 2006-04-25
    • Amanda BaerHamid BalamaneMichael FeldbaumMing JiangAron Pentek
    • Amanda BaerHamid BalamaneMichael FeldbaumMing JiangAron Pentek
    • H01K3/10
    • G11B5/3163G11B5/1278G11B5/3116Y10T29/49021Y10T29/49032Y10T29/49044Y10T29/49126Y10T29/49139Y10T29/49153Y10T29/49155Y10T29/49165Y10T29/49169
    • A method for forming a via in an alumina protective layer on a structure such as a magnetic write head for use in perpendicular magnetic recording. A substrate such as an alumina fill layer, magnetic shaping layer, etc. is formed with region having a contact pad formed therein. A structure such as a magnetic pole, and or magnetic trailing shield, is formed over the substrate and is covered with a thick layer of alumina. The alumina can be applied by a high deposition rate process that does not form voids or seams in the alumina layer. The alumina layer can then be planarized by a chemical mechanical polishing process (CMP) and then a mask structure, such as a photoresist mask, is formed over the alumina layer. The mask structure is formed with an opening disposed over the contact pad. A reactive ion mill is then performed to remove portions of the alumina layer that are exposed at the opening in the mask, thereby forming a via in the alumina layer. The mask can then be lifted off and an electrically conductive material can be deposited into the via. Forming the via by a subtractive method rather than by a liftoff process allows the alumina to be deposited in a manner that does not result in voids. The use of reactive ion milling allows the via to be well defined and formed with substantially vertical side walls rather than in a conical or outward spreading fashion as would be formed by other material removal processes such as wet etching.
    • 在用于垂直磁记录的诸如磁写头的结构上的氧化铝保护层中形成通孔的方法。 在其中形成有形成有接触垫的区域形成诸如氧化铝填充层,磁性成形层等的基板。 诸如磁极和/或磁性后屏蔽的结构形成在衬底之上,并被厚层氧化铝覆盖。 可以通过在氧化铝层中不形成空隙或接缝的高沉积速率工艺来施加氧化铝。 然后可以通过化学机械抛光工艺(CMP)将氧化铝层平坦化,然后在氧化铝层上形成诸如光致抗蚀剂掩模的掩模结构。 掩模结构形成有设置在接触垫上方的开口。 然后执行反应离子研磨机以除去在掩模中的开口处暴露的部分氧化铝层,从而在氧化铝层中形成通孔。 然后可以将掩模剥离,并且可以将导电材料沉积到通孔中。 通过减法法而不是通过剥离工艺形成通孔允许以不会导致空隙的方式沉积氧化铝。 使用反应离子研磨允许通孔被良好地限定并且形成有基本垂直的侧壁,而不是以其它材料去除工艺(例如湿蚀刻)形成的锥形或向外扩展方式。