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91. 发明专利

JPH04344096A DEVICE COOLING SYSTEM AND METHOD 失效
公开(公告)号：JPH04344096A
公开(公告)日：1992-11-30
申请号：JP14396691
申请日：1991-05-20
申请人： OMI TADAHIRO
发明人： OMI TADAHIRO
IPC分类号： F28F19/00 , F25D17/02 , F28F19/01
摘要： PURPOSE:To make cooling efficiency high and maintenance easy. CONSTITUTION:A device cooling water system comprising a water tank 1 for holding a pure water, pipes 3 and 5 adapted to conduct the pure water out from the water tank and send it back into the water tank and at least a pump 2 for passing the pure water through the pipes is characterized by a means 6 for introducing ozone into the pure water.

92. 发明专利

JPH04242933A FORMATION OF OXIDE FILM 失效
公开(公告)号：JPH04242933A
公开(公告)日：1992-08-31
申请号：JP1000891
申请日：1991-01-01
申请人： OMI TADAHIRO
发明人： OMI TADAHIRO
IPC分类号： C23C14/00 , C23C14/08 , C23C14/48 , H01L21/316
摘要： PURPOSE:To provide a method of forming an oxide film which enables a high- quality oxide film to be formed at a low temperature of less than 400 deg.C. CONSTITUTION:A method of forming an oxide film of this invention comprises irradiation of the surface of a semiconductor material, a metallic material, or an allay material with inert gas ions with a kinetic energy of less than 90eV and formation of a thin oxide film of the above-mentioned material on the surface of this material by supplying oxygen gas molecules.

93. 发明专利

JPH03222898A PUMPING PLANT 失效
公开(公告)号：JPH03222898A
公开(公告)日：1991-10-01
申请号：JP1592190
申请日：1990-01-25
申请人： NIKOKU KIKAI KOGYO KK , OMI TADAHIRO
发明人： OMI TADAHIRO , SATOU ROKUHEIJI
IPC分类号： F04D29/10 , F04D5/00 , F04D29/12
摘要： PURPOSE:To prevent any friction powder due to sliding contact from mixing into a fluid passage by installing an exhaust passage for a fluid at the fluid passage side in a range from a sliding contact part between a rotary seal body and a fixed seal body to a ring seal part lying between the rotary seal body and a turning shaft. CONSTITUTION:A liquid such as extrapure water or the like being sucked in a fluid passage 37 is enhanced of its pressure by a blade groove 35b of an impeller 35 and then discharged out of a discharge port. At time of rotation of this impeller, a fixed seal body 26 of a mechanical seal 6 and a rotary seal body 29 being pressed by a spring 30 are made slidingly contact with each other whereby some friction powder are produced there. A shaft hole 42 is formed in the central part of a turning shaft 7, while each of through holes 43, 44 is installed at both sides of an O-ring seal 28 on an outer surface of the turning shaft 7, and they are connected to the shaft hole 42, namely, used as an exhaust passage 41. Therefore no friction powder is mixed in the fluid flowing in a shaft through part 1a between the mechanical seal 6 and the turning shaft 7 from the fluid passage 37 under pressure, thus it is discharged out of the exhaust passage 41 without being mixed in the friction powder and the fluid passage 37.

94. 发明专利

JPH0376138A MEMBER CONTACTING WITH ELECTRIFIED BODY 失效
公开(公告)号：JPH0376138A
公开(公告)日：1991-04-02
申请号：JP21214689
申请日：1989-08-18
申请人： OMI TADAHIRO
发明人： OMI TADAHIRO , INABA HITOSHI
IPC分类号： H01L21/677 , H01L21/683 , H01L21/687 , H05F3/02
摘要： PURPOSE:To control wafer potential into neutralized conditions and further, eliminate completely the contamination of a wafer (especially metallic contamination) as well by forming an oxide film of about scores to 100Angstrom thickness which is formed in a high purity-oxidizing atmosphere at a part which is in contact, at least, with an electrified body at the surface of a metal. CONSTITUTION:An oxide film of about scores to 100Angstrom thickness is formed by oxide-treating the surface of a metal which is finished into a mirror face (preferably it is Rmax1mumm or less) that is free from a treatment affected layer with electrolytic polishing and the like in a high purity-oxidizing atmosphere that is extremely low in concentration of water (preferably it is 10ppb or less). Its oxidation is referred to as field assist oxidation and an oxygen molecule attached to the surface of the metal is ionized negatively (O) by a tunnel effect at the surface of the metal and, passing through the oxide film, negative ions are pulled into the interface between the oxide film and the metal by an electric field generated at the oxide film and then, they act upon the metal to form the oxide film. When a surface oxidation treatment metal that is treated is used for handling a wafer, an electric charge which is electrified the wafer is neutralized by the tunnel effect of the oxide film.

95. 发明专利

JPH0374843A DEVICE AND METHOD FOR DRY ETCHING 失效
公开(公告)号：JPH0374843A
公开(公告)日：1991-03-29
申请号：JP21110689
申请日：1989-08-16
申请人： OMI TADAHIRO , SEIKO INSTR INC
发明人： OMI TADAHIRO , MIKOSHIBA NOBUO , MUROTA JUNICHI , MATSUURA TAKASHI , UETAKE HIROAKI
IPC分类号： C23F4/00 , H01L21/302 , H01L21/3065
摘要： PURPOSE:To improve working accuracy for dry etching by measuring the potential produced on a sample during the etching through contacting a metal terminal directly with the rear surface of the sample and detecting the end point of the etching from the change of the potential. CONSTITUTION:A wafer 1 is fixed on a stage 1 provided in a reaction chamber. A metal terminal 3 is brought into sure contact with the wafer by the spring force of a coiled spring 5. The metal terminal 3 is received in a holder 4 and is not exposed to plasma space. The coiled spring 5 is also incorporated in the holder 4. The holder 4 is made of metal, and the inner and outer surfaces thereof are covered with an insulator. Measured potential is led out to the atmosphere side via a wiring 6 made of a coaxial cable and a feed through 7. A chamber 8 is grounded and is used as the potential reference. A voltage is measured by a monitoring device 9. When the end point is detected, a signal processing circuit 10 supplies a signal to a shutter driving circuit 11 to close a shutter, which was opened during the etching, to prevent the wafer 1 from being irradiated with plasma.

96. 发明专利

JPH02216042A REFLECTED ELECTRON BEAM DIFFRACTION APPARATUS 失效
公开(公告)号：JPH02216042A
公开(公告)日：1990-08-28
申请号：JP3714489
申请日：1989-02-16
申请人： MIKOSHIBA NOBUO , OMI TADAHIRO , TSUBOCHI KAZUO , EKI KAZUYA
发明人： MIKOSHIBA NOBUO , OMI TADAHIRO , TSUBOUCHI KAZUO , EKI KAZUYA
IPC分类号： G01N23/225 , G01N23/20 , G01N23/201
摘要： PURPOSE:To obtain information on a bearing and size of a crystal of a sample while enabling an analysis with high depth-wise resolutions by performing an arithmetic processing of a diffraction pattern as produced when the surface of a sample is irradiated with an electron beam converged to a fine diameter at an angle of incidence almost parallel with the surface thereof. CONSTITUTION:The surface of a sample 3 is irradiated with an electron beam converged to a fine diameter to observe a diffraction pattern. At this point, a relationship between intensities of electron beams at a plurality of points on the diffraction pattern does not change while a monocrystalline area in the surface of the sample 3 is scanned by an electron beam 4 incident into the sample 3 but changes depending on a difference in a direction or the like of a crystal face of an adjacent crystal when the scanning is shifted thereto. A change in this relationship is extracted by a arithmetic processing of a detection output at the points to be displayed two-dimensionally. Thus, only 10-20Angstrom is enough for the penetration depth of the electron beam 4 into the surface of the sample 3 to allow clear recognition of a construction of a fine area on the surface of the sample 3 and this is utilized to be combined with an ion etching of the surface of the sample 3 thereby enabling an structural analysis of the sample 3 with depth-resolutions at 10-20Angstrom .

97. 发明专利

JPH01288647A ACTIVE DAMPING BASE FOR PRECISE INSTRUMENT 失效
公开(公告)号：JPH01288647A
公开(公告)日：1989-11-20
申请号：JP11538988
申请日：1988-05-12
申请人： OMI TADAHIRO , TOKKYO KIKI KK
发明人： OMI TADAHIRO , YASUDA MASASHI
IPC分类号： G01D11/30 , F16F7/10 , F16F15/00 , F16F15/02 , G03F7/20 , H01L21/027 , H01L21/30 , H01S3/02 , H01S3/03
摘要： PURPOSE:To cut off the vibration transmission onto a high precision instrument by arranging an elastic support body having a low spring constant in the horizontal direction and high spring constant in the vertical direction and controlling the vibration of the additional mass so that its phase may reverse against a harmful vibration. CONSTITUTION:An elastic support body 2 is that which laminates a metal sheet 12 and rubber sheet 13 alternately. Pressure containers 4a, 4b are mutually communicated via the conduit 14 having an orifice 5 and communicated respectively to air springs 6a, 6b as well. A compressed air source 7 is connected via a vibration control valve 9 to one part of the pressure containers 4a, 4b and the whole body of this part becomes the actuator A for active control offsetting a harmful vibration by sensing the harmful vibration vibrating an upper part foundation 1a and applying the reaction force for control reversing its phase to the upper part foundation 1a. Consequently the upper part foundation 1a can maintain its still state despite of the input of the harmful vibration.

98. 发明专利

JPS6482547A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS6482547A
公开(公告)日：1989-03-28
申请号：JP24033287
申请日：1987-09-24
申请人： OMI TADAHIRO
发明人： OMI TADAHIRO , SHIBATA SUNAO , UMEDA MASARU
IPC分类号： H01L23/52 , H01L21/3205 , H01L23/522 , H01L23/528
摘要： PURPOSE:To provide pure aluminum wirings in which no hillock is produced even after thermal processing, by controlling a film depositing rate, energy for applying Ar ions to the surface of the aluminum and an amount of thereof. CONSTITUTION:Using a DC-RF combined bias sputtering apparatus, an N-type doped layer 113 is formed on the rear face of a wafer 111 and a tungsten silicide layer 114 is deposited on the surface of the layer 113. Further, an SiO2 film 115 is provided on the top face of the wafer 111 together with apertures 116 for providing lines for scribing the wafer. The wafer thus constructed is fixed on a wafer holder 104 of said apparatus and an aluminum thin film is formed under the conditions that a film depositing rate is 5000Angstrom /min and the Ar ions are applied with energy of 40V to the surface of the aluminum during the deposition of the film. A pair of DC power supplies 107, 108 are regulated such that six to eight Ar ions are applied per one Al atom deposited. According to this process, no hillock is produced even after a thermal processing and an extremely flat surface can be obtained.

99. 发明专利

JPS6431956A MANUFACTURE OF STAINLESS STEEL MEMBER FOR SEMICONDUCTOR-MANUFACTURING EQUIPMENT 失效
公开(公告)号：JPS6431956A
公开(公告)日：1989-02-02
申请号：JP18567387
申请日：1987-07-25
申请人： OMI TADAHIRO , KOBE STEEL LTD
发明人： OMI TADAHIRO , FUJIWARA KAZUO , TOMARI HARUO , SATO FUMIHIRO
IPC分类号： C23C8/18 , C25F3/00 , C25F3/24 , H01L21/205
摘要： PURPOSE:To manufacture a stainless steel member having an oxide film on the surface for semiconductor-manufacturing equipment excellent in smoothness and cleanliness, by subjecting a stainless steel member in which surface roughness is regulated to submicron by means of electropolishing to oxidation treatment by heating at the prescribed temp. in an atmosphere of an oxygen content in a specific range. CONSTITUTION:The surface roughness of the internal surface of a stainless steel tube stock is regulated to =25% oxygen content, by which an oxide film is formed on the internal surface of the tube. By this method, the stainless steel member for semiconductor-manufacturing equipment excellent in smoothness and cleanliness at the internal surface of the tube stock and causing no effusion of stainless steel-composing elements, such as heavy metal ions, from the internal surface of the tube stock can be manufactured.

100. 发明专利

JPS63186875A SURFACE REACTION FILM FORMING DEVICE 失效
公开(公告)号：JPS63186875A
公开(公告)日：1988-08-02
申请号：JP1903687
申请日：1987-01-29
申请人： OMI TADAHIRO
发明人： OMI TADAHIRO , UMEDA MASARU
IPC分类号： H01L21/31 , C23C16/44 , C23C16/455 , C23C16/48 , H01L21/205
摘要： PURPOSE:To improve the adsorption probability of gaseous raw materials onto a wafer surface and to efficiently and quickly form a thin film on the wafer, by providing means for activating the gaseous raw materials at the time of blowing the gaseous raw materials via a ceramic filter onto the wafer surface. CONSTITUTION:The inside of a reaction chamber 103 is evacuated by a vacuum pump 127 while a baffle plate 102 is held in tight contact with the ceramic filter 101. The wafer 116 is carried onto a wafer susceptor 104 contg. a plasma torch 117 from a conveyance chamber 122. The baffle plate 102 is then moved upward and the gaseous raw materials are blown at a prescribed flow rate through the ceramic filter 101 onto the wafer 116 from a supply system 115. Planar incident UV excitation light 208 is projected into the chamber 103 from the direction approximately perpendicular to the conveying direction of the wafer and the planar UV beam is multiple-reflected by UV reflection plates 204, 205 coated with MgF2+Al on the inside surface to decompose, excite and activate the molecules of the gaseous raw materials. The high-quality thin film is thereby formed at a high speed on the wafer 116 with good reproducibility.

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