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91. 发明申请

US20080113876A1 Probe array and associated methods 审中-公开
标题翻译：探头数组及相关方法
公开(公告)号：US20080113876A1
公开(公告)日：2008-05-15
申请号：US11889455
申请日：2007-08-13
申请人： Won-sun Kim , Sung-min Chi , Jung-hwan Hah , Kyoung-seon Kim , Sang-jun Choi , Man-hyoung Ryoo
发明人： Won-sun Kim , Sung-min Chi , Jung-hwan Hah , Kyoung-seon Kim , Sang-jun Choi , Man-hyoung Ryoo
IPC分类号： C40B30/04 , C40B40/00 , C40B50/18
CPC分类号： C40B40/06 , B01J19/0046 , B01J2219/00432 , B01J2219/00529 , B01J2219/00608 , B01J2219/00621 , B01J2219/00626 , B01J2219/00637 , B01J2219/00659 , B01J2219/00675 , B01J2219/00711 , B01J2219/00722 , B82Y30/00 , C40B30/04 , C40B50/14 , G01N33/54353
摘要： A probe array includes a substrate having at least two projecting features adjacent to one another, each feature including a top surface and a side surface, an isolation region separating the at least two features, at least two active regions, the at least two active regions including the top surfaces of the at least two features, and an inactive region separating the at least two active regions, the inactive region including the isolation region.
摘要翻译：探针阵列包括具有彼此相邻的至少两个突出特征的基底，每个特征包括顶表面和侧表面，隔离区域将至少两个特征区分开，至少两个活性区域，所述至少两个活性区域包括所述至少两个特征的顶表面，以及分离所述至少两个活性区域的非活性区域，所述非活性区域包括所述隔离区域。

92. 发明申请

US20080113300A2 Coating Compositions for Use in Forming Patterns and Methods of Forming Patterns 审中-公开
标题翻译：用于形成图案的涂料组合物和形成图案的方法
公开(公告)号：US20080113300A2
公开(公告)日：2008-05-15
申请号：US11397882
申请日：2006-04-05
申请人： Sang-jun Choi , Mitsuhiro Hata , Man-hyoung Ryoo , Jung-hwan Hah
发明人： Sang-jun Choi , Mitsuhiro Hata , Man-hyoung Ryoo , Jung-hwan Hah
IPC分类号： G03C5/00
CPC分类号： G03F7/40 , H01L21/0273 , H01L21/31144
摘要： A coating composition for forming etch mask patterns may include a polymer and an organic solvent. The polymer may have an aromatic ring substituted by a vinyl ether functional group. The polymer may be, for example, a Novolak resin partially substituted by a vinyl ether functional group or poly(hydroxystyrene) partially substituted by a vinyl ether functional group.
摘要翻译：用于形成蚀刻掩模图案的涂料组合物可以包括聚合物和有机溶剂。聚合物可以具有被乙烯基醚官能团取代的芳环。聚合物可以是例如部分被乙烯基醚官能团取代的酚醛清漆树脂或部分被乙烯基醚官能团取代的聚（羟基苯乙烯）。

93. 发明申请

US20080051298A1 Microarrays including probe cells formed within substrates and methods of making the same 审中-公开
标题翻译：微阵列包括在底物内形成的探针细胞及其制备方法
公开(公告)号：US20080051298A1
公开(公告)日：2008-02-28
申请号：US11891767
申请日：2007-08-13
申请人： Won-sun Kim , Sung-min Chi , Jung-hwan Hah , Kyoung-seon Kim , Sang-jun Choi , Man-hyoung Ryoo
发明人： Won-sun Kim , Sung-min Chi , Jung-hwan Hah , Kyoung-seon Kim , Sang-jun Choi , Man-hyoung Ryoo
IPC分类号： C40B40/04 , C40B50/14
CPC分类号： B82Y30/00 , B01J19/0046 , B01J2219/00317 , B01J2219/00585 , B01J2219/00596 , B01J2219/00605 , B01J2219/00608 , B01J2219/00612 , B01J2219/00621 , B01J2219/00626 , B01J2219/00659 , B01J2219/00662 , B01J2219/00711 , B01J2219/00722
摘要： According to some embodiments of the invention, provided herein is a microarray comprising a substrate; a plurality of probe cells formed in the substrate, wherein at least one probe cell includes a linker; and a probe cell separation area. In addition, in some embodiments, the microarray may include a molecular probe coupled to the linker. Related methods are also described herein.
摘要翻译：根据本发明的一些实施方案，本文提供了包含底物的微阵列; 形成在所述底物中的多个探针单元，其中至少一个探针单元包括接头; 和探针细胞分离区域。此外，在一些实施方案中，微阵列可以包括耦合到接头的分子探针。本文还描述了相关方法。

94. 发明申请

US20070196984A1 Nonvolatile memory device, layer deposition apparatus and method of fabricating a nonvolatile memory device using the same 审中-公开
标题翻译：非挥发性存储器件，层淀积设备和使用其的非易失性存储器件的制造方法
公开(公告)号：US20070196984A1
公开(公告)日：2007-08-23
申请号：US11655191
申请日：2007-01-19
申请人： Jung-hyun Lee , Sang-bong Bang , Sang-jun Choi , Bum-seok Seo , Chang-soo Lee
发明人： Jung-hyun Lee , Sang-bong Bang , Sang-jun Choi , Bum-seok Seo , Chang-soo Lee
IPC分类号： H01L21/336
CPC分类号： C23C14/46 , C23C14/0052 , C23C14/08 , H01L27/2436 , H01L45/04 , H01L45/1233 , H01L45/146 , H01L45/1625 , H01L45/1675
摘要： Provided are a nonvolatile memory device, a layer deposition apparatus and a method of fabricating a nonvolatile memory device using the same. The apparatus may include a chamber capable of holding a substrate, a particle-discharging target discharging particles toward the substrate, and a first ion beam gun accelerating a first plurality of ions and irradiating the accelerated ions toward the substrate. The method of fabricating a nonvolatile memory device may include discharging particles from a target toward a substrate, accelerating and irradiating a first plurality of ions toward the substrate, forming a reaction product by reacting the discharged particles and the accelerated and irradiated first plurality of ions, and forming a data storage layer having a deposited layer on the substrate. The nonvolatile memory device may include a data storage layer including a transition metal oxide layer formed by reacting discharged transition metal particles and accelerated and irradiated oxygen ions.
摘要翻译：提供一种非易失性存储器件，层淀积设备和使用其的非易失性存储器件的制造方法。该装置可以包括能够保持基板的室，向基板排出颗粒的颗粒排放目标，以及加速第一多个离子并将加速离子朝向基板照射的第一离子束枪。制造非易失性存储器件的方法可以包括将靶从靶向衬底排放，加速和照射第一多个离子朝向衬底，通过使排出的微粒和加速和照射的第一多个离子反应形成反应产物，以及在所述基板上形成具有沉积层的数据存储层。非易失性存储装置可以包括数据存储层，该数据存储层包括通过使放电的过渡金属颗粒和加速和照射的氧离子反应而形成的过渡金属氧化物层。

95. 发明申请

US20070172760A1 Photosensitive polymer and photoresist composition having the same 失效
标题翻译：光敏聚合物和具有相同的光致抗蚀剂组合物
公开(公告)号：US20070172760A1
公开(公告)日：2007-07-26
申请号：US11655977
申请日：2007-01-22
申请人： Sang-jun Choi , Han-ku Cho
发明人： Sang-jun Choi , Han-ku Cho
IPC分类号： G03C1/00
CPC分类号： G03F7/0395 , C08F220/18 , C08F232/08 , C08F236/20 , G03F7/0397
摘要： A photosensitive polymer for a photoresist and a photoresist composition having the same are provided. The photosensitive polymer for a photoresist includes the repeating unit represented by the formula below: wherein R1 is a C1-C20 hydrocarbon group or a C1-C20 hetero hydrocarbon group including at least one hetero atom selected from the group consisting of nitrogen, fluorine and sulfur.
摘要翻译：提供了用于光致抗蚀剂的光敏聚合物和具有该光致抗蚀剂组合物的光致抗蚀剂组合物。用于光致抗蚀剂的光敏聚合物包括由下式表示的重复单元：其中R 1是C 1 -C 20烃基或包括至少一个选自氮，氟和硫的杂原子的C 1 -C 20 -C 20杂烃基。

96. 发明申请

US20070082471A1 Method of fabricating semiconductor memory device having plurality of storage node electrodes 有权
标题翻译：制造具有多个存储节点电极的半导体存储器件的方法
公开(公告)号：US20070082471A1
公开(公告)日：2007-04-12
申请号：US11546420
申请日：2006-10-12
申请人： Dae-hyuk Kang , Jung-min Oh , Chang-ki Hong , Sang-jun Choi , Woo-gwan Shim
发明人： Dae-hyuk Kang , Jung-min Oh , Chang-ki Hong , Sang-jun Choi , Woo-gwan Shim
IPC分类号： H01L21/3205
CPC分类号： H01L28/90 , H01L21/0334 , H01L21/31144 , H01L27/10852
摘要： In one aspect, a method of fabricating a semiconductor memory device is provided which includes forming a mold insulating film over first and second portions of a semiconductor substrate, where the mold insulating film includes a plurality of storage node electrode holes spaced apart over the first portion of the semiconductor substrate. The method further includes forming a plurality of storage node electrodes on inner surfaces of the storage node electrode holes, respectively, and forming a capping film which covers the storage node electrodes and a first portion of the mold insulating film located over the first portion of the semiconductor substrate, and which exposes a second portion of the mold insulating film located over the second portion of the semiconductor substrate. The method further includes selectively removing, including wet etching, the mold insulating film to expose a sidewall of at least one storage node electrode among the storage node electrodes covered by the capping film, and removing the capping film by dry etching to expose upper portions of the storage node electrodes.
摘要翻译：一方面，提供一种制造半导体存储器件的方法，其包括在半导体衬底的第一和第二部分上形成模绝缘膜，其中所述模绝缘膜包括在所述第一部分上分开的多个存储节点电极孔的半导体衬底。该方法还包括分别在存储节点电极孔的内表面上形成多个存储节点电极，并且形成覆盖存储节点电极的封盖膜和位于第一部分上的模具绝缘膜的第一部分半导体衬底，并且暴露位于半导体衬底的第二部分上方的模具绝缘膜的第二部分。该方法还包括选择性地去除包括湿式蚀刻的模具绝缘膜，以暴露由覆盖膜覆盖的存储节点电极中的至少一个存储节点电极的侧壁，以及通过干蚀刻去除封盖膜以暴露存储节点电极。

97. 发明授权

US07129015B2 Silicon-containing polymer, negative type resist composition comprising the same, and patterning method for semiconductor device using the same 有权
标题翻译：含硅聚合物，含有它们的负型抗蚀剂组合物和使用其的半导体器件的图案化方法
公开(公告)号：US07129015B2
公开(公告)日：2006-10-31
申请号：US10702778
申请日：2003-11-06
申请人： Sang-jun Choi
发明人： Sang-jun Choi
IPC分类号： G03C1/73 , G03F7/038 , G03F7/30 , G03F7/36 , G03F7/38 , C08F30/08
CPC分类号： C08F220/26 , C08F230/08 , G03F7/0382 , G03F7/0758 , G03F7/095 , Y10S430/111 , Y10S430/115 , Y10S430/122 , Y10S430/126 , Y10S430/146
摘要： A polymer used for a negative type resist composition having a first repeating unit of a Si-containing monomer unit, a second repeating unit having a hydroxy group or an epoxy ring and copolymerized with the first repeating unit is provided. The first repeating unit is represented by the following formula: wherein R1 is a hydrogen atom or a methyl group, X is a C1–C4 alkyl or alkoxy group, and n is an integer from 2 to 4. Also, there is provided a negative type resist composition including the polymer which is an alkali soluble base polymer, a photoacid generator and a crosslinking agent cross linkable in the presence of an acid.
摘要翻译：提供了用于具有含Si单体单元的第一重复单元，具有羟基或环氧环并与第一重复单元共聚的第二重复单元的负型抗蚀剂组合物的聚合物。第一重复单元由下式表示：其中R 1是氢原子或甲基，X是C 1 -C 4烷基， SUB>烷基或烷氧基，n为2〜4的整数。另外，提供一种负型抗蚀剂组合物，其包含作为碱溶性基础聚合物的聚合物，光致酸产生剂和可交联的交联剂的酸。

98. 发明申请

US20060172229A1 Alignment system used in nano-imprint lithography and nano imprint lithography method using the alignment system 审中-公开
标题翻译：对准系统用于纳米压印光刻和纳米压印光刻法使用对准系统
公开(公告)号：US20060172229A1
公开(公告)日：2006-08-03
申请号：US11340696
申请日：2006-01-27
申请人： Sang-jun Choi , Jung-hyun Lee , Suk-won Lee , Moon-gu Lee
发明人： Sang-jun Choi , Jung-hyun Lee , Suk-won Lee , Moon-gu Lee
IPC分类号： H01L21/00 , G03C5/00
CPC分类号： B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F9/00
摘要： An alignment system used in nano-imprint lithography and a nano-imprint lithography method using the alignment system are provided. The alignment system includes: a plurality of electron emission devices, which are provided in the mold and emit electrons; and a plurality of electrodes, which are provided to face the electron emission devices and at which the electrons emitted from the electron emission devices arrive. The mold and the substrate are aligned with each other by maximizing the amount of current in each of the electrodes.
摘要翻译：提供了用于纳米压印光刻的对准系统和使用对准系统的纳米压印光刻方法。对准系统包括：多个电子发射装置，其设置在模具中并发射电子; 以及设置成面对电子发射器件并且从电子发射器件发射的电子到达的多个电极。通过使每个电极中的电流量最大化，模具和衬底彼此对准。

99. 发明授权

US07084227B2 Photosensitive polymer and chemically amplified photoresist composition containing the same 失效
标题翻译：光敏聚合物和含有其的化学放大光致抗蚀剂组合物
公开(公告)号：US07084227B2
公开(公告)日：2006-08-01
申请号：US10925983
申请日：2004-08-26
申请人： Dong-won Jung , Sang-jun Choi , Si-hyeung Lee , Sook Lee
发明人： Dong-won Jung , Sang-jun Choi , Si-hyeung Lee , Sook Lee
IPC分类号： C08F10/00
CPC分类号： G03F7/0395
摘要： The photosensitive polymer includes a first monomer which is norbornene ester having C1 to C12 aliphatic alcohol as a substituent, and a second monomer which is maleic anhydride. A chemically amplified photoresist composition, containing the photosensitive polymer, has an improved etching resistance and adhesion to underlying layer materials, and exhibits wettability to developing solutions.
摘要翻译：感光性高分子包含作为取代基具有C 1〜C 12脂肪族醇的降冰片烯的第一单体和作为马来酸酐的第二单体。含有光敏聚合物的化学放大光致抗蚀剂组合物具有改善的抗蚀刻性和对下层材料的粘附性，并且显示出对显影溶液的润湿性。

100. 发明授权

US07045267B2 Resist composition comprising photosensitive polymer having lactone in its backbone 有权
标题翻译：抗蚀剂组合物包含其主链中具有内酯的光敏聚合物
公开(公告)号：US07045267B2
公开(公告)日：2006-05-16
申请号：US10349917
申请日：2003-01-24
申请人： Kwang-sub Yoon , Dong-won Jung , Si-hyeung Lee , Hyun-woo Kim , Sook Lee , Sang-gyun Woo , Sang-jun Choi
发明人： Kwang-sub Yoon , Dong-won Jung , Si-hyeung Lee , Hyun-woo Kim , Sook Lee , Sang-gyun Woo , Sang-jun Choi
IPC分类号： G03F7/038 , C07D307/00
CPC分类号： G03F7/0395 , G03F7/0392 , G03F7/0397 , Y10S430/106
摘要： This invention is directed to a coating composition used for original equipment manufacturing or refinishing uses in the automotive industry, which coating composition utilizes an acrylic polymer which contains substituted or unsubstituted exomethylene lactones or lactams as a comonomer.
摘要翻译：本发明涉及用于汽车工业的原始设备制造或修补用途的涂料组合物，该涂料组合物使用含有取代或未取代的异亚丙基内酯或内酰胺作为共聚单体的丙烯酸类聚合物。

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