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91. 发明申请

US20100314377A1 ANNEALING DEVICE 失效
标题翻译：退火装置
公开(公告)号：US20100314377A1
公开(公告)日：2010-12-16
申请号：US12680221
申请日：2008-09-25
申请人： Shigeru Kasai , Tomohiro Suzuki , Sumi Tanaka , Masatake Yoneda , Hiroyuki Miyashita
发明人： Shigeru Kasai , Tomohiro Suzuki , Sumi Tanaka , Masatake Yoneda , Hiroyuki Miyashita
IPC分类号： H05B1/00 , H01L21/26 , H01L33/00
CPC分类号： H01L21/67115 , H01L25/0753 , H01L33/54 , H01L2224/48091 , H01L2924/181 , H01L2924/3025 , H01L2924/00 , H01L2924/00014 , H01L2924/00012
摘要： Disclosed is an annealing device that includes a processing chamber into which a wafer is received, a heating source having a plurality of light emitting diodes (LEDs) for emitting a light toward the wafer, which faces the surface of the wafer, and a light transmissive member provided corresponding to the heating source, into which the light from the light emitting elements is transmitted. The heating source has the light emitting elements attached on a support toward the wafer. Each of the light emitting elements is individually covered with a lens layer made of a transparent resin.
摘要翻译：公开了一种退火装置，其包括接收晶片的处理室，具有朝向晶片的朝向晶片表面的光的多个发光二极管（LED）的加热源，以及透光对应于来自发光元件的光被传输到其中的加热源设置的构件。加热源具有附着在朝向晶片的支撑件上的发光元件。每个发光元件分别被透明树脂制成的透镜层覆盖。

92. 发明申请

US20100164315A1 PROCESSING APPARATUS 有权
标题翻译：加工设备
公开(公告)号：US20100164315A1
公开(公告)日：2010-07-01
申请号：US12663134
申请日：2008-05-29
申请人： Masamichi Nomura , Kenjiro Koizumi , Shigeru Kasai
发明人： Masamichi Nomura , Kenjiro Koizumi , Shigeru Kasai
IPC分类号： H02K7/09
CPC分类号： H01L21/68792 , C23C14/505 , H01J37/32761
摘要： A rotary floater (30) for supporting an object to be processed (W) is floated by the magnetic attraction of a floating electromagnet assembly (F), and the rotary floater (30) is rotated by the magnetic attraction of a rotary electromagnet assembly (R) while its horizontal position being controlled by the magnetic attraction of a positioning electromagnet assembly (H). The floating electromagnet assembly (F) causes the magnetic attraction to act vertically upwardly, so that the rotary floater (30) is floated and suspended without contact with the inner wall of a processing container (2).
摘要翻译：用于支撑待加工物体（W）的旋转浮子（30）通过浮动电磁体组件（F）的磁吸引而浮起，旋转浮子（30）通过旋转电磁体组件 R），而其水平位置由定位电磁铁组件（H）的磁吸引力控制。浮动电磁体组件（F）使得磁吸引力垂直向上作用，使得旋转浮子（30）浮动并悬挂而不与处理容器（2）的内壁接触。

93. 发明申请

US20090267669A1 Microwave Generating Apparatus and Microwave Generating Method 审中-公开
标题翻译：微波发生装置和微波发生方法
公开(公告)号：US20090267669A1
公开(公告)日：2009-10-29
申请号：US11887733
申请日：2006-03-31
申请人： Shigeru Kasai
发明人： Shigeru Kasai
IPC分类号： H03K3/00
CPC分类号： H03B28/00 , H01J37/32192 , H01J37/32311 , H05B6/686 , H05B6/705 , H05H1/46
摘要： The present invention is a microwave generating apparatus comprising: a switch signal generator that generates a square wave switch signal having a fundamental frequency of a microwave band; a switching power amplifier that performs a switching power amplification based on the switch signal so as to output an amplified signal; a variable voltage supplier that is capable of variably supplying a driving voltage for amplification to the switching power amplifier; a microwave selector that extracts from the amplified signal a sine wave signal of the same frequency as the fundamental frequency of the switch signal so as to output the same as a microwave; an output signal detector that detects the microwave; and a driving voltage controller that controls the variable voltage supplier based on a result detected by the output signal detector.
摘要翻译：本发明是一种微波发生装置，包括：开关信号发生器，其生成具有微波频带的基频的方波开关信号; 开关功率放大器，其基于所述开关信号执行开关功率放大，以输出放大信号; 能够向开关功率放大器可变地提供用于放大的驱动电压的可变电压供给器; 微波选择器，从放大信号中提取与开关信号的基频相同频率的正弦波信号，以将其输出为微波; 检测微波的输出信号检测器; 以及基于由输出信号检测器检测到的结果来控制可变电压供给器的驱动电压控制器。

94. 发明申请

US20080187299A1 HEAT TREATMENT APPARATUS, COMPUTER PROGRAM, AND STORAGE MEDIUM 有权
标题翻译：热处理设备，计算机程序和存储介质
公开(公告)号：US20080187299A1
公开(公告)日：2008-08-07
申请号：US12053336
申请日：2008-03-21
申请人： Masahiro Shimizu , Shigeru Kasai , Masatake Yoneda
发明人： Masahiro Shimizu , Shigeru Kasai , Masatake Yoneda
IPC分类号： F26B3/30
CPC分类号： H01L21/67115 , H01L21/324 , H01L21/67109
摘要： A heat treatment apparatus for performing prescribed heat treatment to a subject (W) to be treated is provided with a processing chamber in which air can be exhausted; a mounting table arranged in the processing chamber, for placing on an upper plane the subject to be treated; a plurality of thermoelectric conversion elements arranged on an upper part of the mounting table; a light transmitting window for covering a ceiling portion of the processing chamber airtight; and a gas introduction unit for introducing a required gas into the processing chamber. A heating unit which includes a plurality of heating light sources including a semiconductor light emitting element for emitting heating light to the subject to be treated, is provided above the light transmitting window. Thus, heating efficiency is improved and temperature can be increased and reduced at a higher speed for the subject to be treated.
摘要翻译：对待处理对象（W）进行规定的热处理的热处理装置设置有能够排出空气的处理室; 布置在处理室中的安装台，用于将待处理的物体放置在上平面上; 多个热电转换元件，布置在所述安装台的上部; 用于将处理室的顶部部分密封的透光窗口; 以及用于将所需气体引入处理室的气体引入单元。包括多个加热光源的加热单元设置在透光窗的上方，该多个加热光源包括用于向被处理物体发出加热光的半导体发光元件。因此，提高加热效率并且可以以更高的速度提高和降低待处理对象的温度。

95. 发明授权

US07355379B2 Coaxial type impedance matching device and impedance detecting method for plasma generation 有权
标题翻译：同轴型阻抗匹配装置及等离子体发生阻抗检测方法
公开(公告)号：US07355379B2
公开(公告)日：2008-04-08
申请号：US11370780
申请日：2006-03-08
申请人： Toshiaki Kitamura , Koichi Rokuyama , Shigeru Kasai , Takashi Ogino , Yuki Osada
发明人： Toshiaki Kitamura , Koichi Rokuyama , Shigeru Kasai , Takashi Ogino , Yuki Osada
IPC分类号： G01R23/00 , G01R25/00
CPC分类号： H01J37/32174 , H01J37/32082 , H01J37/32183 , H01P5/026 , H01P5/04
摘要： A plasma generating method generates plasma in a treating chamber by controlling a high-frequency generating unit to generate a high-frequency signal and by feeding the high-frequency signal to the treating chamber through an impedance matching device. The plasma generating method includes controlling the impedance matching device, when the plasma is generated in the treating chamber, so as to satisfy a preset matching condition, and then controlling the high-frequency generating unit to generate and feed the high-frequency signal of the power generating the plasma, to the treating chamber.
摘要翻译：等离子体产生方法通过控制高频发生单元产生高频信号并通过阻抗匹配装置将高频信号馈送到处理室来在处理室中产生等离子体。等离子体产生方法包括当在处理室中产生等离子体时，控制阻抗匹配装置，以便满足预设的匹配条件，然后控制高频产生单元以产生和馈送高频信号产生等离子体的功率到处理室。

96. 发明申请

US20060160359A1 Vacuum processing apparatus 审中-公开
标题翻译：真空加工设备
公开(公告)号：US20060160359A1
公开(公告)日：2006-07-20
申请号：US10546803
申请日：2004-02-12
申请人： Shigeru Kasai , Susumu Katoh , Tomohito Komatsu , Tetsuya Saito , Sumi Tanaka
发明人： Shigeru Kasai , Susumu Katoh , Tomohito Komatsu , Tetsuya Saito , Sumi Tanaka
IPC分类号： H01L21/44 , C23C16/00
CPC分类号： C23C16/45521 , C23C16/455
摘要： A vacuum processing apparatus is constituted of the following portions: a processing container with the bottom, capable of drawing vacuum; a placement platform installed in the container; a heating portion for heating a substrate on the platform; a processing gas-feeding portion for feeding a processing gas into the container; a partitioning portion surrounding a space between the platform and the bottom of the container and partitioning off the space from a processing space in the container; a purge gas-feeding portion for feeding a purge gas into the space surrounded by the partitioning portion; a purge gas-discharging portion for discharging the purge gas from the space surrounded by the partitioning portion; a control portion for controlling the purge gas-feeding portion and/or the purge gas-discharging portion so as to regulate the pressure in the space surrounded by the partitioning portion; and a temperature-detecting portion penetrating the bottom of the container, inserted in the space surrounded by the partitioning portion, and having the top end in contact with the platform. The partitioning portion has the lower end in surface-contact with the bottom of the container. The control portion regulates the pressure in the space surrounded by the partitioning portion to a pressure higher than that in the processing space in the container.
摘要翻译：真空处理装置由以下部分构成：具有底部的能够抽真空的处理容器; 安装在容器中的放置平台; 用于加热所述平台上的基板的加热部分; 处理气体供给部，用于将处理气体供给到所述容器中; 围绕所述平台和所述容器的底部之间的空间并将所述空间与所述容器中的处理空间分隔开的分隔部分; 净化气体供给部分，用于将净化气体供给到由分隔部分包围的空间中; 净化气体排出部，用于从由分隔部包围的空间排出净化气体; 用于控制净化气体供给部分和/或净化气体排出部分以便调节由分隔部分包围的空间中的压力的控制部分; 以及穿过容器底部的温度检测部分，插入由分隔部分包围的空间中，并且顶端与平台接触。分隔部分的下端与容器的底部表面接触。控制部将由分隔部包围的空间内的压力调整为高于容器内的处理空间的压力。

97. 发明申请

US20060086319A1 Processing gas supply mechanism, film forming apparatus and method, and computer storage medium storing program for controlling same 审中-公开
标题翻译：处理气体供给机构，成膜装置和方法以及用于控制其的计算机存储介质存储程序
公开(公告)号：US20060086319A1
公开(公告)日：2006-04-27
申请号：US11297394
申请日：2005-12-09
申请人： Shigeru Kasai , Norihiko Yamamoto
发明人： Shigeru Kasai , Norihiko Yamamoto
IPC分类号： H01L21/306 , C23F1/00 , C23C16/00
CPC分类号： C23C16/45565 , C23C16/16 , C23C16/4557
摘要： A processing gas supply mechanism installed on a processing chamber of a film forming apparatus for supplying a processing gas containing a metal organic compound onto a substrate to be processed includes a processing gas inlet opening for introducing the processing gas, a diffusion space for diffusing the processing gas introduced from the processing gas inlet opening, a processing gas supply mechanism main body for forming the processing gas diffusion space, and one or more processing gas supply holes for supplying the processing gas from the diffusion space to a processing space on the substrate in the processing chamber. Further, the processing gas supply holes are shaped to have a Peclet number of 0.5 to 2.5 when the processing gas passes therethrough.
摘要翻译：一种安装在用于将含有金属有机化合物的处理气体供给到待处理的基板上的成膜装置的处理室中的处理气体供给机构包括：用于引入处理气体的处理气体入口，用于使处理气体扩散的扩散空间从处理气体导入口导入的气体，用于形成处理气体扩散空间的处理气体供给机构主体，以及用于将处理气体从扩散空间供给到基板上的处理空间的一个或多个处理气体供给孔处理室。此外，当处理气体通过时，处理气体供给孔被成形为具有0.5至2.5的佩佩克数。

98. 发明申请

US20050082004A1 Plasma processing equipment 失效
标题翻译：等离子体处理设备
公开(公告)号：US20050082004A1
公开(公告)日：2005-04-21
申请号：US10502807
申请日：2003-01-27
申请人： Shigeru Kasai
发明人： Shigeru Kasai
IPC分类号： H01L21/302 , H01J37/32 , H01L21/3065 , H01P3/06 , H01Q1/40 , H01Q1/52 , H01Q9/04 , H01L21/306
CPC分类号： H01J37/32192 , H01P3/06 , H01Q1/40 , H01Q1/526 , H01Q9/0407
摘要： Plasma processing equipment capable of increasing the heat resistance of a wave guide by using a high dielectric material, comprising a processing container 44 formed to allow vacuuming, a loading table 46 installed in the processing container for placing a processed body W thereon, a microwave transmission plate 72 installed in an opening part at the ceiling of the processing container, a flat antenna member 76 for feeding microwave into the processing container through the microwave transmission plate, a shield cover body 80 earthed so as to cover the upper part of the flat antenna member, and a waveguide 90 for feeding the microwave from a microwave generating source to the flat antenna member, characterized in that the waveguide is formed of a high dielectric waveguide 94 using the high dielectric material, whereby the heat resistance of the waveguide can be increased.
摘要翻译：一种等离子体处理设备，其能够通过使用高介电材料来提高波导的耐热性，其包括形成为允许真空的处理容器44，安装在处理容器中的用于将加工体W放置在其上的装载台46，微波传输安装在处理容器顶棚的开口部分的板72，用于通过微波传输板将微波馈入处理容器的平面天线部件76，接地以覆盖平坦天线的上部的屏蔽罩体80 以及用于将微波从微波发生源馈送到平面天线构件的波导90，其特征在于，所述波导由使用高介电材料的高电介质波导94形成，从而可以增加波导的耐热性。

99. 发明授权

US06819052B2 Coaxial type impedance matching device and impedance detecting method for plasma generation 有权
标题翻译：同轴型阻抗匹配装置及等离子体发生阻抗检测方法
公开(公告)号：US06819052B2
公开(公告)日：2004-11-16
申请号：US10441899
申请日：2003-05-20
申请人： Toshiaki Kitamura , Koichi Rokuyama , Shigeru Kasai , Takashi Ogino , Yuki Osada
发明人： Toshiaki Kitamura , Koichi Rokuyama , Shigeru Kasai , Takashi Ogino , Yuki Osada
IPC分类号： H01J724
CPC分类号： H01J37/32174 , H01J37/32082 , H01J37/32183 , H01P5/026 , H01P5/04
摘要： For plasma generation, an impedance matching device and a process of controlling and detecting the impedance matching device are provided to satisfy a preset matching condition. The impedance matching device includes a tubular external conductor and an internal conductor disposed therein, a matching device body including a plurality of dielectrics, a moving mechanism, a storing unit for storing a data table, a measuring device, and a calculation control unit. The impedance detecting process includes inputting a progressive wave and a reflected wave outputted by a directional coupler connected to an object to be matched, generating different signals, and mixing the signals to determine relative phase differences and amplitude ratios of the signals, and detecting an input impedance of the object to be matched on a basis of the detected amplitude ratios and that of a true phase difference between the progressive wave and the reflected wave that is detected by referring to a relationship prepared in advance.
摘要翻译：对于等离子体产生，提供阻抗匹配装置和控制和检测阻抗匹配装置的过程以满足预设的匹配条件。阻抗匹配装置包括管状外部导体和布置在其中的内部导体，包括多个电介质的匹配装置主体，移动机构，用于存储数据表的存储单元，测量装置和计算控制单元。阻抗检测处理包括：输入由连接到要匹配对象的定向耦合器输出的行波和反射波，产生不同的信号，以及混合信号以确定信号的相对相位差和振幅比，以及检测输入基于检测到的振幅比来匹配的物体的阻抗以及通过参照预先准备的关系检测到的行进波和反射波之间的真相位差的阻抗。

100. 发明授权

US6092299A Vacuum processing apparatus 有权
标题翻译：真空加工设备
公开(公告)号：US6092299A
公开(公告)日：2000-07-25
申请号：US146398
申请日：1998-09-03
申请人： Koichi Yamazaki , Shigeru Kasai
发明人： Koichi Yamazaki , Shigeru Kasai
IPC分类号： C23C14/24 , H01L21/00 , H01L21/205 , H01L21/26 , H01L21/285 , F26B13/30
CPC分类号： H01L21/67115
摘要： A present vacuum treating apparatus comprises a process chamber for subjecting an object to a predetermined process in a predetermined vacuum state, a stage located in the process chamber and on which the object is placed, a lamp unit provided at the lower side of the processing chamber and having a plurality of lamps as a light source and adapted to heat the object on the stage by a heat energy of light directed from these lamps to the stage for illumination, a rotation shaft connected to the lamp unit to rotate the lamp unit, a support body rotatably supporting the rotation shaft, and a thermo-module provided at a contacting area of the support body selective to the rotation shaft and, by absorbing heat on its rotation shaft side and dissipating heat on its support body side, transferring the heat on the lamp unit to the support body through the rotation shaft.
摘要翻译：本真空处理装置包括处理室，用于使物体在预定的真空状态下进行预定的处理，位于处理室中的放置物体的台，设置在处理室的下侧的灯单元并且具有多个灯作为光源并且适于通过从这些灯指向的光的热能来加热舞台上的物体以进行照明;连接到灯单元以旋转灯单元的旋转轴，支撑体可旋转地支撑旋转轴，以及热模块，设置在支撑体的与旋转轴有选择性的接触区域处，并且通过在其旋转轴侧吸收热量并在其支撑体侧散发热量，将热量传递灯单元通过旋转轴到支撑体。

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