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    • 94. 发明申请
    • Methods and compositions for identifying target cell cytolytic lymphocytes in a sample
    • 用于鉴定样品中靶细胞溶细胞淋巴细胞的方法和组合物
    • US20060240490A1
    • 2006-10-26
    • US11396349
    • 2006-03-30
    • Peter Lee
    • Peter Lee
    • G01N33/567G01N33/574
    • G01N33/56972G01N2333/70517G01N2333/70596
    • Methods and compositions for identifying target cell cytolytic lymphocytes, e.g., T-cells, such as neoplastic cell cytolytic T-cells, in a subject are provided. In practicing the subject methods, the sample is contacted with a target cell stimulator, e.g., a neoplastic cell, and a detectably labeled granule membrane protein specific binding agent. Following contact, any resultant labeled lymphocytes, e.g., T-cells, are identified as lymphocytes cytolytic for the target cell. Also provided are compositions, kits, and systems for practicing the subject methods. The subject methods find use in a variety of different applications, including disease/therapy monitoring applications and therapeutic applications.
    • 提供了用于鉴定受试者中靶细胞溶细胞淋巴细胞如T细胞如肿瘤细胞溶细胞T细胞的方法和组合物。 在实施本发明方法时,将样品与目标细胞刺激剂例如肿瘤细胞和可检测标记的颗粒膜蛋白特异性结合剂接触。 在接触之后,任何得到的标记的淋巴细胞(例如T细胞)被鉴定为靶细胞溶细胞淋巴细胞。 还提供了用于实践本发明方法的组合物,试剂盒和系统。 主题方法可用于各种不同的应用,包括疾病/治疗监测应用和治疗应用。
    • 95. 发明授权
    • Output buffer circuit with control circuit for modifying supply voltage and transistor size
    • 输出缓冲电路,具有用于修改电源电压和晶体管尺寸的控制电路
    • US07123049B2
    • 2006-10-17
    • US11188980
    • 2005-07-26
    • Takashi SatouShigezumi MatsuiPeter LeeGouichi Yokomizo
    • Takashi SatouShigezumi MatsuiPeter LeeGouichi Yokomizo
    • H03K19/003
    • G06F1/3228G06F1/324G06F1/3296H03K19/0005H03K19/0016H04L25/0278H04L25/028H04L25/0292H04L25/03885Y02D10/126Y02D10/172
    • In this invention, a control circuit (111) controls both the power supply voltage (VDDQ) and the transistor size of the external output buffer to thereby select the lowest supply voltage that achieves the impedance matching with the transmission line (100), to thereby save bus termination by a resistor, thus consequently achieving both the lowering of the power consumption and the speeding-up in the data transmission. The power consumption during the data transmission is proportional to the square of the supply voltage. If the operational supply voltage of the external output buffer is lowered, the power consumption will be reduced accordingly. If the operational supply voltage of the external output buffer is lowered, the impedance thereof will be increased apparently; and at the same time, if the transistor size of the external output buffer is increased, the increased impedance will be decreased. By bringing the output impedance (ON-resistance) of the external output buffer into conformity with the impedance of the transmission line, it becomes possible to output the signal without distortions on the waveform.
    • 在本发明中,控制电路(111)控制电源电压(VDDQ)和外部输出缓冲器的晶体管尺寸,从而选择实现与传输线(100)的阻抗匹配的最低电源电压,从而 通过电阻节省总线终端,从而实现了功耗的降低和数据传输的加速。 数据传输期间的功耗与电源电压的平方成比例。 如果外部输出缓冲器的工作电源电压降低,则功耗将相应降低。 如果外部输出缓冲器的工作电源电压降低,其阻抗将明显增加; 并且同时,如果外部输出缓冲器的晶体管尺寸增加,则增加的阻抗将减小。 通过使外部输出缓冲器的输出阻抗(导通电阻)与传输线的阻抗一致,可以在波形上输出信号而没有失真。
    • 97. 发明申请
    • Novel combo memory design and technology for multiple-function java card, sim-card, bio-passport and bio-id card applications
    • 用于多功能java卡,SIM卡,生物护照和生物识别卡应用的新型组合存储器设计和技术
    • US20060138245A1
    • 2006-06-29
    • US11305700
    • 2005-12-16
    • Peter Lee
    • Peter Lee
    • G06K19/06
    • G11C11/005G11C16/0408G11C16/0483G11C17/12H01L27/115H01L29/0646H01L29/7885
    • A combination volatile and nonvolatile memory integrated circuit has at least one volatile memory array placed on the substrate and multiple nonvolatile memory arrays. The volatile and nonvolatile memory arrays have address space associated with each other such that each array may be addressed with common addressing signals. The combination volatile and nonvolatile memory integrated circuit further has a memory control circuit in communication with external circuitry to receive address, command, and data signals. The memory control circuit interprets the address, command, and data signals, and for transfer to the volatile memory array and the nonvolatile memory arrays for reading, writing, programming, and erasing the volatile and nonvolatile memory arrays. The volatile memory array is may be a SRAM, a pseudo SRAM, or a DRAM. Any of the nonvolatile memory arrays maybe masked programmed ROM arrays, NAND configured flash memory NAND configured EEPROM.
    • 易失性和非易失性存储器集成电路的组合具有放置在基板和多个非易失性存储器阵列上的至少一个易失性存储器阵列。 易失性和非易失性存储器阵列具有彼此相关联的地址空间,使得每个阵列可以用公共寻址信号寻址。 组合易失性和非易失性存储器集成电路还具有与外部电路通信的存储器控​​制电路,以接收地址,命令和数据信号。 存储器控制电路解释地址,命令和数据信号,并且用于传送到易失性存储器阵列和用于读取,写入,编程和擦除易失性和非易失性存储器阵列的非易失性存储器阵列。 易失性存储器阵列可以是SRAM,伪SRAM或DRAM。 任何非易失性存储器阵列都可以屏蔽编程的ROM阵列,NAND配置闪存NAND配置的EEPROM。