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1. 发明申请

US20040266072A1 Focused ion beam treatment method and semiconductor device suitable for its implementation 有权
标题翻译：聚焦离子束处理方法和半导体器件适用于其实施
公开(公告)号：US20040266072A1
公开(公告)日：2004-12-30
申请号：US10782724
申请日：2004-02-19
申请人： STMICROELECTRONICS SA
发明人： Thierry Parrassin
IPC分类号： H01L021/26 , H01L021/00 , H01L021/337 , H01L021/84 , H01L021/42 , H01L021/324 , H01L021/477
CPC分类号： H01L23/60 , H01L21/76892 , H01L23/5256 , H01L2924/0002 , H01L2924/00
摘要： A buried oxide layer of an SOI substrate beneath a structure electrically isolated from the rest of a semiconductor device is made to break down so as to open a bias path for the substrate through the structure. It then suffices to connect the electrical ground of the semiconductor device to this bias path so that the ions flow away into the substrate during a focused ion beam treatment of the semiconductor device.

2. 发明申请

US20040253840A1 Method of crystallizing silicon 有权
标题翻译：硅结晶方法
公开(公告)号：US20040253840A1
公开(公告)日：2004-12-16
申请号：US10847287
申请日：2004-05-18
申请人： LG.PHILIPS LCD CO., LTD.
发明人： JaeSung You
IPC分类号： H01L021/76 , H01L021/26 , H01L021/20
CPC分类号： H01L21/0268 , H01L21/02532 , H01L21/2026 , H01L21/268
摘要： A method of crystallizing silicon including preparing a substrate having an amorphous silicon film formed thereon, aligning a mask having a first energy region and a second energy region over a first region of the amorphous silicon film formed on the substrate, irradiating a laser beam through the first and second energy regions of the mask onto the first region of the amorphous silicon film, crystallizing the first region of the amorphous silicon film by irradiating the laser beam through the first energy region of the mask, and activating the crystallized first region by irradiating the laser beam through the second energy region.
摘要翻译：一种使硅结晶的方法，包括制备其上形成有非晶硅膜的衬底，在形成在衬底上的非晶硅膜的第一区域上对准具有第一能量区和第二能区的掩模，照射激光束通过将掩模的第一和第二能量区域放置在非晶硅膜的第一区域上，通过照射穿过掩模的第一能量区域的激光束使非晶硅膜的第一区域结晶，并通过照射激光束通过第二能量区。

3. 发明申请

US20040203257A1 Processing method of semiconductor substrate 审中-公开
标题翻译：半导体衬底的加工方法
公开(公告)号：US20040203257A1
公开(公告)日：2004-10-14
申请号：US10697277
申请日：2003-10-31
申请人： Renesas Technology Corp.
发明人： Takeshi Yoshida , Tohru Koyama , Yoji Mashiko
IPC分类号： H01L021/26 , H01L021/00 , G02B003/00 , H01L031/0232 , C03C015/00
CPC分类号： H01L21/268 , G02B3/00
摘要： A processing technique of a semiconductor substrate which can improve a capability of a solid immersion lens in case of processing the semiconductor substrate and forming the solid immersion lens on its surface is provided. A focused ion beam (5) is irradiated on a semiconductor substrate (1), and a salient part (2) acting as a solid immersion lens is formed on its main surface (3a). At this time, a cutting amount of the semiconductor substrate (1) by the focused ion beam (5) is adjusted by making the irradiation time of the focused ion beam (5) to the semiconductor substrate (1) change. According to this, a surface of the salient part (2) has a curved surface of high precision, and a capability of the salient part (2) as the solid immersion lens is improved.
摘要翻译：提供了半导体衬底的处理技术，其可以在处理半导体衬底并在其表面上形成固体浸没透镜的情况下提高固体浸没透镜的能力。聚焦离子束（5）照射在半导体衬底（1）上，并且在其主表面（3a）上形成用作固体浸没透镜的突出部分（2）。此时，通过使聚焦离子束（5）对半导体基板（1）的照射时间发生变化来调整通过聚焦离子束（5）的切割量的半导体基板（1）。据此，突出部（2）的表面具有高精度的曲面，提高了作为固体浸没透镜的突出部（2）的能力。

4. 发明申请

US20040092088A1 Heat reflecting material and heating device using the material 失效
标题翻译：使用材料的热反射材料和加热装置
公开(公告)号：US20040092088A1
公开(公告)日：2004-05-13
申请号：US10469765
申请日：2003-09-04
发明人： Takao Abe
IPC分类号： H01L021/42 , H01L021/26
CPC分类号： H01L21/67115
摘要： A heating apparatus 20 comprises a container 2 having a work housing space 1 formed therein, and a heat source 3 for heating a work W in the work housing space 1. The apparatus further comprises a heat ray reflecting member 10 having a heat reflecting surface 10a thereof composed of a heat ray reflecting material, so as to allow the heat ray generated in the work housing space 1 to reflect on the heat reflecting surface 10a to thereby change the direction thereof towards the works W. The heat reflecting material is provided for reflecting heat ray in a specific wavelength band, comprises a stack of a plurality of element reflecting layers comprising materials having transparent properties to the heat ray, in which in the element reflecting layers, two adjacent layers are composed of a combination of materials differed from each other in refractive indices to the heat ray, while keeping difference between the refractive indices of 1.1 or larger.
摘要翻译：一个加热装置20包括一个形成有工件收纳空间1的容器2和用于加热工件收纳空间1中的工件W的热源3.该装置还包括具有热反射表面10a的热射线反射构件10 由热射线反射材料构成，以使得在工作容纳空间1中产生的热线在热反射表面10a上反射，从而将其朝向工件W的方向改变。反射材料被设置用于反射特定波长带的热射线包括多个元件反射层的叠层，其包括对热射线具有透明特性的材料，其中在元件反射层中，两个相邻层由彼此不同的材料组合构成在折射率为1.1以上的同时保持热射线的折射率。

5. 发明申请

US20040063333A1 Method and apparatus for an improved baffle plate in a plasma processing system 有权
公开(公告)号：US20040063333A1
公开(公告)日：2004-04-01
申请号：US10259380
申请日：2002-09-30
申请人： TOKYO ELECTRON LIMITED
发明人： Hidehito Saigusa , Taira Takase , Kouji Mitsuhashi , Hiroyuki Nakayama
IPC分类号： H01L021/44 , H01L021/31 , H01L021/469 , H01L021/26 , H01L021/324 , H01L021/42 , H01L021/477
CPC分类号： H01J37/32431
摘要： The present invention presents an improved baffle plate for a plasma processing system, wherein the design and fabrication of the baffle plate advantageously provides for a uniform processing plasma in the process space with substantially minimal erosion of the baffle plate.

6. 发明申请

US20040053514A1 Apparatus for cooling a substrate through thermal conduction in the viscous regime 审中-公开
标题翻译：用于通过粘性状态下的热传导来冷却衬底的装置
公开(公告)号：US20040053514A1
公开(公告)日：2004-03-18
申请号：US10228655
申请日：2002-08-27
发明人： Ali Shajii , David Tao , Mathias Koch , Douglas Brown , Hossein Zarrin
IPC分类号： G05D023/00 , C23C016/00 , H01L021/26 , H01L021/477
CPC分类号： H01L21/67109 , G05D23/27
摘要： The present invention is directed to a semiconductor thermal processing system and an apparatus for thermally cooling a semiconductor substrate. According to one aspect of the present invention, a semiconductor thermal processing system and associated apparatus and method are disclosed which provides a segmented cold plate situated within a process chamber, wherein a plurality of segments of the cold plate are operable to radially translate between an engaged position and a disengaged position, wherein a substrate holder may pass between the plurality of segments when the segments are in the disengaged position. According to another aspect, an elevator is operable to linearly translate a substrate residing on a substrate holder between a heating position proximate to a heater assembly and a cooling position proximate to the segmented cold plate. According to another aspect, the cold plate comprises a plurality of holes through which one or more gases may flow, wherein an amount or mixture of the one or more gases is controllable via a controller, and wherein one or more temperature sensors are operable to provide temperature feedback at the substrate. According to another aspect the substrate resides within close proximity to the cold plate, wherein when gas is flowed through the holes, the substrate is cooled in the viscous regime, and the amount and/or mixture of gases flowed through the holes is controlled, based, at least in part, on the one or more measured temperatures.
摘要翻译：本发明涉及半导体热处理系统和用于热冷却半导体衬底的装置。根据本发明的一个方面，公开了一种半导体热处理系统及相关设备和方法，其提供位于处理室内的分段冷板，其中冷板的多个段可操作以在啮合位置和脱离位置，其中当所述段处于分离位置时，衬底保持器可以在所述多个段之间通过。根据另一方面，电梯可操作以将位于基板保持器上的基板线性平移在靠近加热器组件的加热位置和靠近分段冷板的冷却位置之间。根据另一方面，冷板包括一个或多个气体可流过的多个孔，其中一个或多个气体的量或混合物可经由控制器控制，并且其中一个或多个温度传感器可操作以提供衬底温度反馈。根据另一方面，衬底位于紧邻冷板的位置，其中当气体流过孔时，衬底在粘性状态下被冷却，并且基于孔流动的气体的量和/或混合物被基于，至少部分地基于一个或多个测量的温度。

7. 发明申请

US20040033702A1 Deposition of thin films by laser ablation 审中-公开
标题翻译：通过激光烧蚀沉积薄膜
公开(公告)号：US20040033702A1
公开(公告)日：2004-02-19
申请号：US10380843
申请日：2003-08-01
发明人： Astghik Tamanyan , Grigori Tamanyan
IPC分类号： H01L021/26 , H05B006/00
CPC分类号： C23C14/0611 , C23C14/28
摘要： A method of depositing a thin film on a substrate (2), including ablating a target (16) with a laser beam (12) to create a plume (19) of evaporants extending in a propagation direction away from the target surface (17). The laser beam is focussed a finite distance (d) before the target surface (17) and within the plume (19), thereby imparting increased energy to the evaporants within the plume (19). The target can also be rotated a hihg speed in order to impart a predetermined component of velocity to the evaporants which causes the slower moving evaporants to deflect from the propagation direction and are prevented from being deposited on the substrate. The method is useful in the formation of diamond film and has application in the fields of microchip manufacture, visual display units, solar energy conversion, optics, photonics, protective surfaces, medical uses, and cutting and drilling applications.
摘要翻译：一种在衬底（2）上沉积薄膜的方法，包括用激光束（12）烧蚀靶（16）以产生沿远离目标表面（17）的传播方向延伸的蒸发器的羽流（19）。激光束在目标表面（17）之前和在羽流（19）内聚焦有限距离（d），由此对羽流（19）内的蒸发器赋予增加的能量。目标也可以旋转高速，以便赋予蒸发器预定的速度分量，这导致较慢运动的蒸发器从传播方向偏转并防止沉积在基板上。该方法在金刚石膜的形成中是有用的，并且可用于微芯片制造，视觉显示单元，太阳能转换，光学，光子学，保护表面，医疗用途以及切割和钻孔应用领域。

8. 发明申请

US20040022528A1 Batch furnace 失效
标题翻译：批炉
公开(公告)号：US20040022528A1
公开(公告)日：2004-02-05
申请号：US10313707
申请日：2002-12-05
申请人： WaferMasters, Inc.
发明人： Woo Sik Yoo , Takashi Fukada
IPC分类号： F26B003/30 , H01L021/26
CPC分类号： H01L21/67115 , C23C16/46 , H01L21/67109
摘要： A system and method for isothermally distributing a temperature across a semiconductor device. A furnace assembly is provided, which includes a processing tube configured to removably receive a wafer carrier having a full compliment of semiconductor wafers. A heating assembly is provided which can include a heating element positioned to heat air or other gases allowed to enter the process tube. The furnace assembly and process tube are capable of being vertically raised and lowered into a position enclosing the heating assembly within the process tube. Once the heating assembly forms a seal with the process tube, the process tube is exhausted and purged of air. Gas is then allowed to flow into the process tube and exchange heat with the heating element. The heated gas circulates through the process tube to convectively change the temperature of the wafers.
摘要翻译：一种用于在半导体器件上等温分布温度的系统和方法。提供一种炉组件，其包括配置成可移除地接收具有完全补充半导体晶片的晶片载体的处理管。提供一种加热组件，其可包括加热元件，该加热元件定位成加热允许进入过程管的空气或其它气体。炉组件和处理管能够被垂直地升高和降低到包围加热组件在处理管内的位置。一旦加热组件与处理管形成密封，则处理管被排出并吹扫空气。然后允许气体流入处理管并与加热元件交换热量。加热的气体通过处理管循环以对流地改变晶片的温度。

9. 发明申请

US20030228771A1 ELIMINATION OF DENDRITE FORMATION DURING METAL/CHALCOGENIDE GLASS DEPOSITION 有权
标题翻译：在金属/氯化铝玻璃沉积期间消除沉积物
公开(公告)号：US20030228771A1
公开(公告)日：2003-12-11
申请号：US10164646
申请日：2002-06-06
发明人： Jiutao Li , Allen McTeer
IPC分类号： H01L021/26
CPC分类号： H01L45/143 , C23C14/0688 , C23C14/541 , H01L45/085 , H01L45/141 , H01L45/1625 , H01L45/1641
摘要： A method of forming a programmable conductor memory cell array is disclosed wherein metal and chalcogenide glass are co-sputtered to fill an array of cell vias in a prepared substrate. The prepared substrate is heated above room temperature before the metal and chalcogenide glass film is deposited, and the heating is maintained throughout the deposition. The resulting metal/chalcogenide glass film has good homogeneity, a desired ratio of components, and has a regular surface.
摘要翻译：公开了一种形成可编程导体存储单元阵列的方法，其中金属和硫族化物玻璃被共溅射以填充制备的衬底中的一组电池通孔。在将金属和硫属元素化物玻璃膜沉积之前将制备的基材加热至室温以上，并且在整个沉积期间保持加热。所得的金属/硫族化物玻璃膜具有良好的均匀性，所需的组分比例，并且具有规则的表面。

10. 发明申请

US20030190823A1 Method of loading a wafer onto a wafer holder to reduce thermal shock 有权
标题翻译：将晶片装载到晶片架上以减少热冲击的方法
公开(公告)号：US20030190823A1
公开(公告)日：2003-10-09
申请号：US10118073
申请日：2002-04-05
发明人： Tony J. Keeton , Michael R. Stamp , Mark R. Hawkins
IPC分类号： H01L021/31 , H01L021/26 , H01L021/42 , H01L021/477 , H01L021/469 , H01L021/324
CPC分类号： H01L21/67109 , H01L21/67115 , H01L21/67748
摘要： One or more of three different measures are taken to preheat a wafer before it is loaded into direct contact with a wafer holder, in order to provide optimal throughput while reducing the risk of thermal shock to the wafer. The first measure is to move the wafer holder to a raised position prior to inserting the wafer into the reaction chamber and holding the wafer above the wafer holder. The second measure is to provide an increased flow rate of a heat-conductive gas (such as Hs purge gas) through the chamber prior to inserting the wafer therein. The third measure is to provide a power bias to radiative heat elements (e.g., heat lamps) above the reaction chamber.
摘要翻译：在将晶片加载到与晶片保持器直接接触之前，采用三种不同的措施来预热晶片，以便提供最佳的吞吐量，同时降低对晶片的热冲击的风险。第一个措施是在将晶片插入反应室并将晶片保持在晶片保持器上方之前将晶片保持器移动到升高位置。第二个措施是在将晶片插入其中之前提供通过腔室的导热气体（例如Hs吹扫气体）的增加的流速。第三个措施是向反应室上方的辐射热元件（例如，加热灯）提供功率偏压。

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