专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20040022528A1 Batch furnace 失效
标题翻译：批炉
公开(公告)号：US20040022528A1
公开(公告)日：2004-02-05
申请号：US10313707
申请日：2002-12-05
申请人： WaferMasters, Inc.
发明人： Woo Sik Yoo , Takashi Fukada
IPC分类号： F26B003/30 , H01L021/26
CPC分类号： H01L21/67115 , C23C16/46 , H01L21/67109
摘要： A system and method for isothermally distributing a temperature across a semiconductor device. A furnace assembly is provided, which includes a processing tube configured to removably receive a wafer carrier having a full compliment of semiconductor wafers. A heating assembly is provided which can include a heating element positioned to heat air or other gases allowed to enter the process tube. The furnace assembly and process tube are capable of being vertically raised and lowered into a position enclosing the heating assembly within the process tube. Once the heating assembly forms a seal with the process tube, the process tube is exhausted and purged of air. Gas is then allowed to flow into the process tube and exchange heat with the heating element. The heated gas circulates through the process tube to convectively change the temperature of the wafers.
摘要翻译：一种用于在半导体器件上等温分布温度的系统和方法。提供一种炉组件，其包括配置成可移除地接收具有完全补充半导体晶片的晶片载体的处理管。提供一种加热组件，其可包括加热元件，该加热元件定位成加热允许进入过程管的空气或其它气体。炉组件和处理管能够被垂直地升高和降低到包围加热组件在处理管内的位置。一旦加热组件与处理管形成密封，则处理管被排出并吹扫空气。然后允许气体流入处理管并与加热元件交换热量。加热的气体通过处理管循环以对流地改变晶片的温度。

IPRDB

热门服务

关于我们

友情链接

联系方式