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1. 发明授权

US06727109B2 Method of fabricating long wavelength vertical-cavity surface-emitting lasers 失效
标题翻译：制造长波长垂直腔表面发射激光器的方法
公开(公告)号：US06727109B2
公开(公告)日：2004-04-27
申请号：US10210668
申请日：2002-07-31
申请人： Young Gu Ju , Won Seok Han , O Kyun Kwon , Jae Heon Shin , Byueng Su Yoo , Jung Rae Ro
发明人： Young Gu Ju , Won Seok Han , O Kyun Kwon , Jae Heon Shin , Byueng Su Yoo , Jung Rae Ro
IPC分类号： H01L2100
CPC分类号： H01S5/18308 , H01L33/145 , H01S5/02461 , H01S5/0421 , H01S5/18341 , H01S5/18369 , H01S5/2063
摘要： The present invention relates to a method of fabricating vertical-cavity surface emitting lasers being watched as a light source for long wavelength communication. The present invention includes forming a layer having a high resistance near the surface by implanting heavy ions such as silicon (Si), so that the minimum current injection diameter is made very smaller unlike implantation of a proton. Further, the present invention includes regrowing crystal so that current can flow the epi surface in parallel to significantly reduce the resistance up to the current injection part formed by silicon (Si) ions. Therefore, the present invention can not only effectively reduce the current injection diameter but also significantly reduce the resistance of a device to reduce generation of a heat. Further, the present invention can further improve dispersion of a heat using InP upon regrowth and thus improve the entire performance of the device.
摘要翻译：本发明涉及一种垂直腔表面发射激光器的制造方法，该激光器被视为用于长波长通信的光源。本发明包括通过注入诸如硅（Si）的重离子在表面附近形成具有高电阻的层，使得最小电流注入直径不像植入质子那样非常小。此外，本发明包括再生晶体，使得电流可以平行地流动外延表面，以显着降低直到由硅（Si）离子形成的电流注入部分的电阻。因此，本发明不仅可以有效地降低电流注入直径，而且可以显着降低器件的电阻以减少发热。此外，本发明可以进一步改善在再生后使用InP的散热分散，从而提高装置的整体性能。

2. 发明授权

US07394104B2 Semiconductor optical device having current-confined structure 有权
标题翻译：具有限流结构的半导体光学器件
公开(公告)号：US07394104B2
公开(公告)日：2008-07-01
申请号：US11698418
申请日：2007-01-25
申请人： Hyun Woo Song , O Kyun Kwon , Won Seok Han , Sang Hee Park , Jong Hee Kim , Jae Heon Shin , Young Gu Ju
发明人： Hyun Woo Song , O Kyun Kwon , Won Seok Han , Sang Hee Park , Jong Hee Kim , Jae Heon Shin , Young Gu Ju
IPC分类号： H01L27/15
CPC分类号： H01L33/145 , H01S5/18308 , H01S5/18316 , H01S5/18347 , H01S5/3095 , H01S2301/176
摘要： Provided is a semiconductor optical device having a current-confined structure. The device includes a first semiconductor layer of a first conductivity type which is formed on a semiconductor substrate and includes one or more material layers, a second semiconductor layer which is formed on the first semiconductor layer and includes one or more material layers, and a third semiconductor layer of a second conductivity type which is formed on the second semiconductor layer and includes one or more material layers. One or more layers among the first semiconductor layer, the second semiconductor, and the third semiconductor layer have a mesa structure. A lateral portion of at least one of the material layers constituting the first semiconductor layer, the second semiconductor layer, and the third semiconductor layer is recessed, and the recess is partially or wholly filled with an oxide layer, a nitride layer or a combination of them. The semiconductor optical device having the current-confined region is mechanically reliable, highly thermally conductive, and commercially preferable and can be used in a wavelength range for optical communications.
摘要翻译：提供了具有限流结构的半导体光学器件。该器件包括：第一导电类型的第一半导体层，其形成在半导体衬底上并且包括一个或多个材料层;第二半导体层，形成在第一半导体层上并包括一个或多个材料层;第三半导体层，第二导电类型的半导体层，其形成在第二半导体层上并且包括一个或多个材料层。第一半导体层，第二半导体和第三半导体层中的一层或多层具有台面结构。构成第一半导体层，第二半导体层和第三半导体层的至少一个材料层的侧面部分被凹入，并且凹部被部分地或全部地填充有氧化物层，氮化物层或者他们。具有电流限制区域的半导体光学器件是机械可靠的，高导热性的，并且是商业上优选的，并且可以用于光通信的波长范围。

3. 发明授权

US07230276B2 Semiconductor optical device having current-confined structure 有权
公开(公告)号：US07230276B2
公开(公告)日：2007-06-12
申请号：US10699127
申请日：2003-10-30
申请人： Hyun Woo Song , O Kyun Kwon , Won Seok Han , Sang Hee Park , Jong Hee Kim , Jae Heon Shin , Young Gu Ju
发明人： Hyun Woo Song , O Kyun Kwon , Won Seok Han , Sang Hee Park , Jong Hee Kim , Jae Heon Shin , Young Gu Ju
IPC分类号： H01L27/15
CPC分类号： H01L33/145 , H01S5/18308 , H01S5/18316 , H01S5/18347 , H01S5/3095 , H01S2301/176
摘要： Provided is a semiconductor optical device having a current-confined structure. The device includes a first semiconductor layer of a first conductivity type which is formed on a semiconductor substrate and includes one or more material layers, a second semiconductor layer which is formed on the first semiconductor layer and includes one or more material layers, and a third semiconductor layer of a second conductivity type which is formed on the second semiconductor layer and includes one or more material layers. One or more layers among the first semiconductor layer, the second semiconductor, and the third semiconductor layer have a mesa structure. A lateral portion of at least one of the material layers constituting the first semiconductor layer, the second semiconductor layer, and the third semiconductor layer is recessed, and the recess is partially or wholly filled with an oxide layer, a nitride layer or a combination of them. The semiconductor optical device having the current-confined region is mechanically reliable, highly thermally conductive, and commercially preferable and can be used in a wavelength range for optical communications.

4. 发明授权

US06475818B1 Method for fabricating multi-channel array optical device 有权
标题翻译：制造多通道阵列光学器件的方法
公开(公告)号：US06475818B1
公开(公告)日：2002-11-05
申请号：US09498507
申请日：2000-02-04
申请人： O Kyun Kwon , Byueng Su Yoo , Jae Heon Shin , Jong Heob Baek
发明人： O Kyun Kwon , Byueng Su Yoo , Jae Heon Shin , Jong Heob Baek
IPC分类号： G01R3126
CPC分类号： H01L27/1443 , H01L27/1462 , H01L27/14625 , H01L31/0232 , Y10S438/942
摘要： A method for fabricating a multi-channel array optical device having uniform spacing between different wavelengths and for having precise wavelengths by accomplishing wavelength adjustment and by the forming of mirror layers simultaneously through a multi-layer binary mask and a selective oxidization process. This method is especially useful for fabricating multi-channel array optical devices including multi-channel passive filters and multi-channel surface emitting laser arrays. The method includes forming a plurality of semiconductor mirror layers on a semiconductor substrate; forming an oxidization protective layer on the plurality of semiconductor mirror layers; selectively removing the oxidization protective layer by using a binary mask to expose the semiconductor mirror layer which will adjust a wavelength; oxidizing the exposed semiconductor mirror layer.
摘要翻译：一种通过实现波长调整和通过多层二进制掩模和选择性氧化过程同时形成镜层来制造具有不同波长之间具有均匀间隔并且具有精确波长的多通道阵列光学器件的方法。该方法对于制造包括多通道无源滤波器和多通道表面发射激光器阵列的多通道阵列光学器件尤其有用。该方法包括在半导体衬底上形成多个半导体镜层; 在所述多个半导体镜层上形成氧化保护层; 通过使用二元掩模选择性地去除氧化保护层以暴露将调节波长的半导体镜层; 氧化暴露的半导体镜层。

5. 发明授权

US06989312B2 Method for fabricating semiconductor optical device 有权
标题翻译：制造半导体光学器件的方法
公开(公告)号：US06989312B2
公开(公告)日：2006-01-24
申请号：US10800680
申请日：2004-03-16
申请人： Hyun Woo Song , Won Seok Han , Jong Hee Kim , Young Gu Ju , O Kyun Kwon , Sang Hee Park
发明人： Hyun Woo Song , Won Seok Han , Jong Hee Kim , Young Gu Ju , O Kyun Kwon , Sang Hee Park
IPC分类号： H01L21/20
CPC分类号： H01S5/18341 , H01S5/02461 , H01S5/18305 , H01S5/18308 , H01S5/18363
摘要： Provided is a method for fabricating a semiconductor optical device that can be used as a reflecting semiconductor mirror or an optical filter, in which two or more types of semiconductor layers having different etch rates are alternately stacked, at least one type of semiconductor layers is selectively etched to form an air-gap structure, and an oxide or a nitride having a good heat transfer property is deposited so that the air gap is buried, whereby it is possible to effectively implement the semiconductor reflector or the optical filter having a high reflectance in a small period because of the large index contrast between the oxide or the nitride buried in the air gap and the semiconductor layer.
摘要翻译：提供一种制造半导体光学器件的方法，该半导体光学器件可以用作反射半导体镜或光学滤波器，其中具有不同蚀刻速率的两种或更多种类型的半导体层被交替堆叠，至少一种类型的半导体层是选择性的蚀刻以形成气隙结构，并且沉积具有良好传热特性的氧化物或氮化物，从而使气隙被埋入，由此可以有效地实现具有高反射率的半导体反射器或滤光器这是由于在空气间隙和半导体层中埋入的氧化物或氮化物之间的大的折射率造成的对比度小的周期。

6. 发明授权

US07776752B2 Method of etching for multi-layered structure of semiconductors in group III-V and method for manufacturing vertical cavity surface emitting laser device 有权
标题翻译： III-V族半导体多层结构蚀刻方法及垂直腔面发射激光器件制造方法
公开(公告)号：US07776752B2
公开(公告)日：2010-08-17
申请号：US11635223
申请日：2006-12-07
申请人： O Kyun Kwon , Mi Ran Park , Won Seok Han , Hyun Woo Song
发明人： O Kyun Kwon , Mi Ran Park , Won Seok Han , Hyun Woo Song
IPC分类号： H01L21/302
CPC分类号： H01L21/30621 , H01S5/183 , H01S5/2081
摘要： Provided are an etching method for a multi-layered structure of semiconductors in groups III-V and a method of manufacturing a VCSEL using the etching method. According to the etching method, a stacked structure including a first semiconductor layer and a second semiconductor layer is exposed to a plasma of a mixture consisting of Cl2, Ar, CH4, and H2 to etch the stacked structure, so that a mirror layer of the VCSEL is formed. The first semiconductor layer is formed of a semiconductor in groups III-V and the second semiconductor layer is formed of a semiconductor in groups III-V, other than the semiconductor of the first semiconductor layer. At least part of a lower mirror layer, a lower electrode layer, an optical gain layer, an upper electrode layer, and an upper mirror layer is etched using one time of an etching process, so that a clean and smooth etched surface is obtained.
摘要翻译：提供了III-V族半导体的多层结构的蚀刻方法和使用该蚀刻方法制造VCSEL的方法。根据蚀刻方法，将包括第一半导体层和第二半导体层的堆叠结构暴露于由Cl 2，Ar，CH 4和H 2组成的混合物的等离子体中，以蚀刻层叠结构，使得形成VCSEL。第一半导体层由III-V族的半导体形成，第二半导体层由除了第一半导体层的半导体之外的III-V族的半导体形成。使用一次蚀刻工艺蚀刻下镜面层，下电极层，光增益层，上电极层和上镜层的至少一部分，从而获得清洁且光滑的蚀刻表面。

7. 发明授权

US6055087A Photo-induced electro-optic oscillator using a multiple quantum well pin diode 失效
标题翻译：使用多量子阱针二极管的光感应电光振荡器
公开(公告)号：US6055087A
公开(公告)日：2000-04-25
申请号：US118958
申请日：1998-07-17
申请人： O Kyun Kwon , Kyu Seok Lee , Hye Yong Chu
发明人： O Kyun Kwon , Kyu Seok Lee , Hye Yong Chu
IPC分类号： H01L51/00 , G02F1/015 , G02F3/02 , H01L31/10 , H01S3/10
CPC分类号： G02F3/028 , G02F1/015
摘要： A photo-induced electro-optic oscillator using a multiple quantum well structure PIN diode using a negative resistance characteristic of a photocurrent-voltage is disclosed. The present invention can generate the modulated optical signal as well as the electrical AC signal of a high output by using the multiple quantum well structure having the electro-absorption as the intrinsic layer of the PIN diode, regulate the electrical AC signal frequency and signal amplitude by means of regulating the PIN diode and electrical elements, regulate the modulated optical signal frequency and the modulated signal difference and extinction ratio by means of regulating the multiple quantum well structure, as a result, to generate the electrical and optical signal of a high output, high frequency.
摘要翻译：公开了一种使用具有光电流电压的负电阻特性的多量子阱结构PIN二极管的光感应电光振荡器。本发明可以通过使用具有电吸收的多量子阱结构作为PIN二极管的本征层来产生高输出的调制光信号以及高交流信号，调节电AC信号频率和信号幅度通过调节PIN二极管和电气元件，通过调节多重量子阱结构来调节调制光信号频率和调制信号差和消光比，从而产生高输出的电光信号，高频。

8. 发明授权

US6115375A Multistage optical packet switching apparatus using self electro-optic-effect devices 失效
标题翻译：使用自电光效应器件的多级光分组交换设备
公开(公告)号：US6115375A
公开(公告)日：2000-09-05
申请号：US967797
申请日：1997-11-10
申请人： Kwang Joon Kim , O Kyun Kwon , Kyung Sook Hyun , Seok Ho Song , El Hang Lee
发明人： Kwang Joon Kim , O Kyun Kwon , Kyung Sook Hyun , Seok Ho Song , El Hang Lee
IPC分类号： H04B10/00 , H04Q11/00 , H04L12/50
CPC分类号： H04Q11/0003 , H04Q11/0005 , H04Q2011/0035
摘要： A multistage optical packet switching apparatus with self electro-optic-effect device is disclosed. The apparatus is formed with multistage structure using a plurality of symmetrical self electro-optic-effect devices, self-routing being performed by the control for a header part of optical packets after self-duplication and amplification for the input optical signal. The optical packet switching apparatus using a plurality of symmetrical self electro-optic-effect devices includes a front stage having first and second self electro-optic-effect devices interconnected and a back stage having third and fourth self electro-optic-effect devices interconnected, the 1.quadrature. multistage structure comprising the unit switching modules interconnected each comprising the front and the back stages, the self-duplication and amplification being performed in the front stage and the switching being performed in the back stage. The use of the apparatus is an optical exchange.
摘要翻译：公开了具有自电光效应装置的多级光分组交换装置。该装置使用多个对称的自电光效应装置形成多级结构，通过对输入光信号的自复制和放大之后的光分组的标题部分的控制执行自路由。使用多个对称的自电光效应装置的光分组交换装置包括具有互连的第一和第二自电光效应装置的前级和具有互连的第三和第四自电光效应装置的后级，包括各自包括前级和后级的单元切换模块的1＆amp;多级结构，在前级执行自复制和放大，并且在后级执行切换。该装置的使用是光交换。

9. 发明授权

US07804875B2 Vertical cavity surface emitting laser module having monitoring photodiode and method of fabricating the same 有权
标题翻译：具有监测光电二极管的垂直腔表面发射激光器模块及其制造方法
公开(公告)号：US07804875B2
公开(公告)日：2010-09-28
申请号：US11635938
申请日：2006-12-08
申请人： Mi Ran Park , O Kyun Kwon
发明人： Mi Ran Park , O Kyun Kwon
IPC分类号： H01S5/026 , H01S5/183
CPC分类号： H01S5/02296 , H01S5/0264 , H01S5/0421 , H01S5/0425 , H01S5/18341 , H01S5/18369 , H01S5/3095
摘要： Provided are a vertical cavity surface emitting laser (VCSEL) module providing accurate alignment between a VCSEL and a monitoring photodiode (MPD) for efficiently detecting light emitted by the VCSEL and a method of fabricating the VCSEL module. The VCSEL module includes: a first mirror layer, a first semiconductor conducting layer, an active layer, a tunnel junction layer, and a second semiconductor conducting layer sequentially formed on a first region in a substrate having first and second regions; a MPD disposed on a portion of the second semiconductor conducting layer in the first region; and a VCSEL including layers having the same shapes as the first mirror layer, the first semiconductor conducting layer, the active layer, the tunnel junction layer and the second semiconductor conducting layer in the first region, and a second mirror layer formed on a portion of the second semiconductor conducting layer, and sequentially formed on the second region in the substrate. The predetermined distance is set so that light emitted by the VCSEL can be detected by the MPD.
摘要翻译：提供了垂直腔表面发射激光器（VCSEL）模块，其提供VCSEL和监视光电二极管（MPD）之间的精确对准，用于有效地检测由VCSEL发射的光以及制造VCSEL模块的方法。 VCSEL模块包括：第一半导体层，第一半导体导电层，有源层，隧道结层和顺序地形成在具有第一和第二区域的衬底的第一区域上的第二半导体导电层; 设置在所述第一区域中的所述第二半导体导电层的一部分上的MPD; 以及VCSEL，其包括在第一区域中具有与第一镜像层，第一半导体层，有源层，隧道结层和第二半导体导电层相同形状的层，以及形成在第一区域的一部分上的第二镜层第二半导体导电层，并顺序地形成在基板的第二区域上。设定预定距离，使得能够通过MPD检测由VCSEL发出的光。

10. 发明申请

US20070133642A1 Vertical cavity surface emitting laser module having monitoring photodiode and method of fabricating the same 有权
标题翻译：具有监测光电二极管的垂直腔表面发射激光器模块及其制造方法
公开(公告)号：US20070133642A1
公开(公告)日：2007-06-14
申请号：US11635938
申请日：2006-12-08
申请人： Mi Ran Park , O Kyun Kwon
发明人： Mi Ran Park , O Kyun Kwon
IPC分类号： H01S5/00
CPC分类号： H01S5/02296 , H01S5/0264 , H01S5/0421 , H01S5/0425 , H01S5/18341 , H01S5/18369 , H01S5/3095
摘要： Provided are a vertical cavity surface emitting laser (VCSEL) module providing accurate alignment between a VCSEL and a monitoring photodiode (MPD) for efficiently detecting light emitted by the VCSEL and a method of fabricating the VCSEL module. The VCSEL module includes: a first mirror layer, a first semiconductor conducting layer, an active layer, a tunnel junction layer, and a second semiconductor conducting layer sequentially formed on a first region in a substrate having first and second regions; a MPD disposed on a portion of the second semiconductor conducting layer in the first region; and a VCSEL including layers having the same shapes as the first mirror layer, the first semiconductor conducting layer, the active layer, the tunnel junction layer and the second semiconductor conducting layer in the first region, and a second mirror layer formed on a portion of the second semiconductor conducting layer, and sequentially formed on the second region in the substrate. The predetermined distance is set so that light emitted by the VCSEL can be detected by the MPD.
摘要翻译：提供了垂直腔表面发射激光器（VCSEL）模块，其提供VCSEL和监视光电二极管（MPD）之间的精确对准，用于有效地检测由VCSEL发射的光以及制造VCSEL模块的方法。 VCSEL模块包括：第一半导体层，第一半导体导电层，有源层，隧道结层和顺序地形成在具有第一和第二区域的衬底的第一区域上的第二半导体导电层; 设置在所述第一区域中的所述第二半导体导电层的一部分上的MPD; 以及VCSEL，其包括在第一区域中具有与第一镜像层，第一半导体层，有源层，隧道结层和第二半导体导电层相同形状的层，以及形成在第一区域的一部分上的第二镜层第二半导体导电层，并顺序地形成在基板的第二区域上。设定预定距离，使得能够通过MPD检测由VCSEL发出的光。

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