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1. 发明申请

US20050253136A1 Electroluminescent device 失效
标题翻译：电致发光器件
公开(公告)号：US20050253136A1
公开(公告)日：2005-11-17
申请号：US10836669
申请日：2004-04-30
申请人： Yoshi Ono , Wei Gao , John Conley , Osamu Nishio , Keizo Sakiyama
发明人： Yoshi Ono , Wei Gao , John Conley , Osamu Nishio , Keizo Sakiyama
IPC分类号： G09F9/30 , G09F9/00 , H01L27/32 , H01L29/08 , H01L33/18 , H01L33/28 , H01L33/34 , H01L35/24
CPC分类号： H01L33/28 , H01L33/18 , H01L33/34 , Y10S977/95
摘要： A method is provided for forming an electroluminescent device. The method comprises: providing a type IV semiconductor material substrate; forming a p+/n+ junction in the substrate, typically a plurality of interleaved p+/n+ junctions are formed; and, forming an electroluminescent layer overlying the p+/n+ junction(s) in the substrate. The type IV semiconductor material substrate can be Si, C, Ge, SiGe, or SiC. For example, the substrate can be Si on insulator (SOI), bulk Si, Si on glass, or Si on plastic. The electroluminescent layer can be a material such as nanocrystalline Si, nanocrystalline Ge, fluorescent polymers, or type II-VI materials such as ZnO, ZnS, ZnSe, CdSe, and CdS. In some aspect, the method further comprises forming an insulator film interposed between the substrate and the electroluminescent layer. In another aspect, the method comprises forming a conductive electrode overlying the electroluminescent layer.
摘要翻译：提供了形成电致发光器件的方法。该方法包括：提供IV型半导体材料基板; 在衬底中形成p + / n +结，通常形成多个交错的p + / n +结; 并且形成覆盖衬底中的p + / n +结的电致发光层。 IV型半导体材料基板可以是Si，C，Ge，SiGe或SiC。例如，衬底可以是绝缘体上的Si（SOI），玻璃上的体积Si，Si或塑料上的Si。电致发光层可以是诸如纳米晶体Si，纳米晶体Ge，荧光聚合物或诸如ZnO，ZnS，ZnSe，CdSe和CdS的II-VI族材料的材料。在一些方面，所述方法还包括形成介于基片和电致发光层之间的绝缘膜。另一方面，该方法包括形成覆盖电致发光层的导电电极。

2. 发明授权

US07208768B2 Electroluminescent device 失效
标题翻译：电致发光器件
公开(公告)号：US07208768B2
公开(公告)日：2007-04-24
申请号：US10836669
申请日：2004-04-30
申请人： Yoshi Ono , Wei Gao , John F. Conley, Jr. , Osamu Nishio , Keizo Sakiyama
发明人： Yoshi Ono , Wei Gao , John F. Conley, Jr. , Osamu Nishio , Keizo Sakiyama
IPC分类号： H01L27/15
CPC分类号： H01L33/28 , H01L33/18 , H01L33/34 , Y10S977/95
摘要： A method is provided for forming an electroluminescent device. The method comprises: providing a type IV semiconductor material substrate; forming a p+/n+ junction in the substrate, typically a plurality of interleaved p+/n+ junctions are formed; and, forming an electroluminescent layer overlying the p+/n+ junction(s) in the substrate. The type IV semiconductor material substrate can be Si, C, Ge, SiGe, or SiC. For example, the substrate can be Si on insulator (SOI), bulk Si, Si on glass, or Si on plastic. The electroluminescent layer can be a material such as nanocrystalline Si, nanocrystalline Ge, fluorescent polymers, or type II–VI materials such as ZnO, ZnS, ZnSe, CdSe, and CdS. In some aspect, the method further comprises forming an insulator film interposed between the substrate and the electroluminescent layer. In another aspect, the method comprises forming a conductive electrode overlying the electroluminescent layer.
摘要翻译：提供了形成电致发光器件的方法。该方法包括：提供IV型半导体材料基板; 在衬底中形成p + / n +结，通常形成多个交错的p + / n +结; 并且形成覆盖衬底中的p + / n +结的电致发光层。 IV型半导体材料基板可以是Si，C，Ge，SiGe或SiC。例如，衬底可以是绝缘体上的硅（SOI），玻璃上的体积Si，Si或塑料上的Si。电致发光层可以是诸如纳米晶体Si，纳米晶体Ge，荧光聚合物或诸如ZnO，ZnS，ZnSe，CdSe和CdS的II-VI族材料的材料。在一些方面，所述方法还包括形成介于基片和电致发光层之间的绝缘膜。另一方面，该方法包括形成覆盖电致发光层的导电电极。

3. 发明申请

US20050211665A1 Methods of forming a microlens array 审中-公开
标题翻译：形成微透镜阵列的方法
公开(公告)号：US20050211665A1
公开(公告)日：2005-09-29
申请号：US10813789
申请日：2004-03-26
申请人： Wei Gao , Yoshi Ono , John Conley
发明人： Wei Gao , Yoshi Ono , John Conley
IPC分类号： G02B1/11 , B29C33/38 , B29D11/00 , B29L11/00 , G02B3/00
CPC分类号： G02B3/0012 , G02B3/0056
摘要： Methods of forming microlens structure are provided. A hard mask is formed overlying a transparent material. An opening is patterned into the hard mask. Both the patterned hard mask and the underlying transparent material are exposed to a wet etch that etches the hard mask and the transparent material. As the hard mask is etched the opening increases exposing more of the transparent material. Depending on the etch selectivity, a lens shape is formed with sloped sidewalls. The lens opening may be filled with lens material to form a lens.
摘要翻译：提供了形成微透镜结构的方法。形成覆盖透明材料的硬掩模。将开口图案化成硬掩模。图案化的硬掩模和下面的透明材料都暴露于蚀刻硬掩模和透明材料的湿蚀刻。当硬掩模被蚀刻时，开口增加了暴露更多的透明材料。根据蚀刻选择性，形成具有倾斜侧壁的透镜形状。透镜开口可以被透镜材料填充以形成透镜。

4. 发明申请

US20060197438A1 Nanotip electrode electroluminescence device with contoured phosphor layer 失效
公开(公告)号：US20060197438A1
公开(公告)日：2006-09-07
申请号：US11070051
申请日：2005-03-01
申请人： John Conley , David Evans , Wei Gao , Yoshi Ono
发明人： John Conley , David Evans , Wei Gao , Yoshi Ono
IPC分类号： H05B33/14 , H05B33/00 , H01L51/50 , H01L51/56
CPC分类号： H05B33/10 , B82Y20/00 , C09K11/54 , C09K11/642 , H01L33/18 , H05B33/14
摘要： A device and a fabrication method are provided for an EL device with a nanotip-contoured phosphor layer. The method comprises: forming a bottom electrode with nanotips; forming a phosphor layer overlying the bottom electrode, having irregularly-shaped top and bottom surfaces; and, forming a top electrode overlying the phosphor layer. The bottom electrode top surface has a nanotip contour, and the phosphor layer irregularly-shaped top and bottom surfaces have contours approximately matching the bottom electrode top surface nanotip contour. In one aspect, a contoured bottom dielectric is interposed between the bottom electrode and the phosphor layer, having top and bottoms surfaces with contours approximately matching the nanotip contour. Likewise, a top dielectric may be interposed between the top electrode and the phosphor layer, having a bottom surface with a contour approximately matching the contour of phosphor layer top surface.

5. 发明申请

US20060073623A1 METHODS OF FORMING A MICROLENS ARRAY OVER A SUBSTRATE EMPLOYING A CMP STOP 失效
标题翻译：在使用CMP停止的基板上形成微阵列的方法
公开(公告)号：US20060073623A1
公开(公告)日：2006-04-06
申请号：US10956789
申请日：2004-09-30
申请人： John Conley , Yoshi Ono , Wei Gao , David Evans
发明人： John Conley , Yoshi Ono , Wei Gao , David Evans
IPC分类号： H01L21/00
CPC分类号： H01L21/31053 , H01L21/31133 , H01L27/14627 , H01L27/14685
摘要： A method of forming a microlens structure is provided along with a CCD array structure employing a microlens array. An embodiment of the method comprises providing a substrate having a surface with photo-elements on the surface; depositing a transparent material overlying the surface of the substrate; depositing a CMP stop overlying the transparent material; depositing a lens-shaping layer overlying the CMP stop layer; depositing and patterning a photoresist layer overlying the lens-shaping layer to form openings to expose the lens-shaping layer; introducing a first isotropic etchant into the openings and etching the lens-shaping layer where exposed to form initial lens shapes having a radius; stripping the photoresist; exposing the lens-shaping layer to a second isotropic etchant to increase the radius of the lens shapes; transferring the lens shape through the CMP stop layer into the transparent material using an anisotropic etch; and depositing a lens material overlying the transparent material, whereby the lens shapes are at least partially filled with lens material. Planarizing the lens material using CMP and stopping at the CMP stop layer.
摘要翻译：提供一种形成微透镜结构的方法以及采用微透镜阵列的CCD阵列结构。该方法的一个实施例包括提供具有在表面上具有光元件的表面的基底; 沉积覆盖衬底表面的透明材料; 沉积覆盖透明材料的CMP停止点; 沉积覆盖CMP停止层的透镜成形层; 沉积和图案化覆盖透镜成形层的光致抗蚀剂层以形成露出透镜成形层的开口; 在开口中引入第一各向同性蚀刻剂并蚀刻暴露于其中形成具有半径的初始透镜形状的透镜成形层; 剥离光刻胶; 将透镜成形层暴露于第二各向同性蚀刻剂以增加透镜形状的半径; 使用各向异性蚀刻将透镜形状通过CMP停止层转移到透明材料中; 以及沉积覆盖透明材料的透镜材料，由此透镜形状至少部分地被透镜材料填充。使用CMP对透镜材料进行平面化，并在CMP停止层处停止。

6. 发明申请

US20050208432A1 Methods of forming a microlens array over a substrate 审中-公开
标题翻译：在衬底上形成微透镜阵列的方法
公开(公告)号：US20050208432A1
公开(公告)日：2005-09-22
申请号：US10805115
申请日：2004-03-19
申请人： John Conley , Yoshi Ono , Wei Gao
发明人： John Conley , Yoshi Ono , Wei Gao
IPC分类号： G02B3/00 , H01L27/14 , H04N1/028
CPC分类号： H01L27/14685 , G02B3/0012 , H01L27/14627
摘要： A method of forming a microlens structure is provided along with a CCD array structure employing a microlens array. An embodiment of the method comprises providing a substrate having a surface with photo-elements on the surface; depositing a transparent material overlying the surface of the substrate; depositing and patterning a photoresist layer overlying the transparent material to form openings to expose the transparent material; introducing a first isotropic etchant into the openings and etching the transparent material where exposed to form initial lens shapes having a radius; stripping the photoresist; exposing the transparent material to a second isotropic etchant to increase the radius of the lens shapes; and depositing a lens material overlying the transparent material, whereby the lens shapes are at least partially filled with lens material. An embodiment of the CCD array comprises an array of CCD pixels on a substrate; and a lens array in contact with the array of CCD pixels; wherein the lens array comprises a transparent material having concave indentations, and a lens material at least partially filling the concave indentations forming a plano-convex lens in contact with the transparent material.
摘要翻译：提供一种形成微透镜结构的方法以及采用微透镜阵列的CCD阵列结构。该方法的一个实施例包括提供具有在表面上具有光元件的表面的基底; 沉积覆盖衬底表面的透明材料; 沉积和图案化覆盖透明材料的光致抗蚀剂层以形成露出透明材料的开口; 在开口中引入第一各向同性蚀刻剂并蚀刻暴露以形成具有半径的初始透镜形状的透明材料; 剥离光刻胶; 将透明材料暴露于第二各向同性蚀刻剂以增加透镜形状的半径; 以及沉积覆盖透明材料的透镜材料，由此透镜形状至少部分地被透镜材料填充。 CCD阵列的一个实施例包括衬底上的CCD像素阵列; 以及与CCD像素阵列接触的透镜阵列; 其中所述透镜阵列包括具有凹陷痕的透明材料，以及透镜材料，其至少部分地填充形成与所述透明材料接触的平凸透镜的所述凹陷痕。

7. 发明授权

US07811837B2 Terbium-doped, silicon-rich oxide electroluminescent devices and method of making the same 有权
标题翻译：铽掺杂，富硅氧化物电致发光器件及其制造方法
公开(公告)号：US07811837B2
公开(公告)日：2010-10-12
申请号：US11582275
申请日：2006-10-16
申请人： Tingkai Li , Wei Gao , Yoshi Ono , Sheng Teng Hsu
发明人： Tingkai Li , Wei Gao , Yoshi Ono , Sheng Teng Hsu
IPC分类号： H01L29/00
CPC分类号： H01L27/15 , H01L33/0004 , H01L33/343
摘要： A method of fabricating an electroluminescent device includes, on a prepared substrate, depositing a rare earth-doped silicon-rich layer on gate oxide layer as a light emitting layer; and annealing and oxidizing the structure to repair any damage caused to the rare earth-doped silicon-rich layer; and incorporating the electroluminescent device into a CMOS IC. An electroluminescent device fabricated according to the method of the invention includes a substrate, a rare earth-doped silicon-rich layer formed on the gate oxide layer for emitting a light of a pre-determined wavelength; a top electrode formed on the rare earth-doped silicon-rich layer; and associated CMOS IC structures fabricated thereabout.
摘要翻译：一种制造电致发光器件的方法包括：在制备的衬底上，在作为发光层的栅极氧化物层上沉积稀土掺杂的富硅层; 并对该结构进行退火和氧化以修复对稀土掺杂的富硅层造成的任何损伤; 并将电致发光器件并入CMOS IC。根据本发明的方法制造的电致发光器件包括：衬底，形成在栅极氧化物层上的用于发射预定波长的光的稀土掺杂富硅层; 在稀土掺杂的富硅层上形成的顶部电极; 并在其附近制造相关的CMOS IC结构。

8. 发明申请

US20100040959A1 Error Diffusion-Derived Sub-Resolutional Grayscale Reticle 有权
标题翻译：误差扩散次级分辨灰度光栅
公开(公告)号：US20100040959A1
公开(公告)日：2010-02-18
申请号：US12247130
申请日：2008-10-07
申请人： Bruce D. Ulrich , Yoshi Ono , Wei Gao
发明人： Bruce D. Ulrich , Yoshi Ono , Wei Gao
IPC分类号： G03F1/00
CPC分类号： G03F1/50 , G03F7/0005
摘要： A method is provided for forming an error diffusion-derived sub-resolutional grayscale reticle. The method forms at least one partial-light transmissive layer overlying a transparent substrate. At least one unit cell in formed in the transmissive layer. The unit cell is formed by selecting the number of reduced-transmission pixels in the unit cell, and forming a sub-pattern of reduced-transmission pixels in the unit cell. The unit cell is sub-resolutional at a first wavelength.
摘要翻译：提供了一种用于形成误差扩散衍生的子分辨灰度掩模版的方法。该方法形成了覆盖透明衬底的至少一个部分透光层。在透射层中形成至少一个单电池。通过选择单位单元中的缩小透射像素的数量，并且在单位单元中形成减少透射像素的子图案来形成单位单元。单元在第一波长处是次分辨的。

9. 发明申请

US20100040958A1 Sub-Resolutional Grayscale Reticle 有权
标题翻译：子分辨灰度光栅
公开(公告)号：US20100040958A1
公开(公告)日：2010-02-18
申请号：US12193568
申请日：2008-08-18
申请人： Bruce D. Ulrich , Yoshi Ono , Wei Gao
发明人： Bruce D. Ulrich , Yoshi Ono , Wei Gao
IPC分类号： G03F1/00
CPC分类号： G03F1/50 , G03F7/0005
摘要： A sub-resolutional grayscale reticle and associated fabrication method have been presented. The method provides a transparent substrate, and forms a plurality of coincident partial-light transmissive layers overlying the transparent substrate. A pattern is formed, sub-resolutional at a first wavelength, in at least one of the transmissive layers. If there are n transmissive layers, the reticle transmits at least (n+1) intensities of light. In one aspect, each of the plurality of transmissive layers has the same extinction coefficient and the same thickness. In other aspects, the transmissive layers may have different thickness. Then, even if the extinction coefficients are the same, the attenuation of light through each layer is different. The transmission characteristics of the reticle can be further varied if the transmissive layers have different extinction coefficients. Likewise, the transmission characteristics through the sub-resolutional patterns can be varied.
摘要翻译：已经提出了一种亚分辨灰度标线和相关的制造方法。该方法提供透明基板，并且形成覆盖透明基板的多个重合部分透光层。在至少一个透射层中形成在第一波长处副溶液的图案。如果存在n个透射层，则光罩传播至少（n + 1）个光强。在一个方面，多个透射层中的每一个具有相同的消光系数和相同的厚度。在其它方面，透射层可以具有不同的厚度。那么即使消光系数相同，每层的光的衰减也是不同的。如果透射层具有不同的消光系数，则可以进一步改变掩模版的透射特性。同样，可以改变通过子解决图案的传输特性。

10. 发明授权

US07087526B1 Method of fabricating a p-type CaO-doped SrCu2O2 thin film 有权
标题翻译：制造p型CaO掺杂SrCu2O2薄膜的方法
公开(公告)号：US07087526B1
公开(公告)日：2006-08-08
申请号：US11261020
申请日：2005-10-27
申请人： Wei-Wei Zhuang , Wei Gao , Yoshi Ono
发明人： Wei-Wei Zhuang , Wei Gao , Yoshi Ono
IPC分类号： H01L23/02
CPC分类号： C23C26/00
摘要： A method of CaO-doped SrCu2O2 spin-on precursor synthesis and low temperature p-type thin film deposition, includes preparing a wafer to receive a spin-coating thereon; selecting metalorganic compounds to form a SrCu2O2 precursor, mixing and refluxing the metalorganic compounds to form a precursor mixture; filtering the precursor mixture to produce a spin-coating precursor; applying the spin-coating precursor to the wafer in a two-step spin coating procedure; baking the spin-coated wafer using a hot-plate bake to evaporate substantially all of the solvents; and annealing the spin-coated wafer to form a CaO-doped SrCu2O2 layer thereon.
摘要翻译：掺有CaO的SrCu 2 O 2 O 2旋涂前体合成和低温p型薄膜沉积的方法包括制备晶片以在其上接受旋涂法 ; 选择金属有机化合物以形成SrCu 2 O 2 O 2前体，将金属有机化合物混合并回流以形成前体混合物; 过滤前体混合物以产生旋涂前体; 以两步旋涂方法将旋涂前驱体施加到晶片上; 使用热板烘烤烘烤旋涂的晶片以基本上蒸发所有溶剂; 以及对旋涂的晶片退火以在其上形成掺杂CaO的SrCu 2 O 2 O 2层。

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