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1. 发明申请

US20050211665A1 Methods of forming a microlens array 审中-公开
标题翻译：形成微透镜阵列的方法
公开(公告)号：US20050211665A1
公开(公告)日：2005-09-29
申请号：US10813789
申请日：2004-03-26
申请人： Wei Gao , Yoshi Ono , John Conley
发明人： Wei Gao , Yoshi Ono , John Conley
IPC分类号： G02B1/11 , B29C33/38 , B29D11/00 , B29L11/00 , G02B3/00
CPC分类号： G02B3/0012 , G02B3/0056
摘要： Methods of forming microlens structure are provided. A hard mask is formed overlying a transparent material. An opening is patterned into the hard mask. Both the patterned hard mask and the underlying transparent material are exposed to a wet etch that etches the hard mask and the transparent material. As the hard mask is etched the opening increases exposing more of the transparent material. Depending on the etch selectivity, a lens shape is formed with sloped sidewalls. The lens opening may be filled with lens material to form a lens.
摘要翻译：提供了形成微透镜结构的方法。形成覆盖透明材料的硬掩模。将开口图案化成硬掩模。图案化的硬掩模和下面的透明材料都暴露于蚀刻硬掩模和透明材料的湿蚀刻。当硬掩模被蚀刻时，开口增加了暴露更多的透明材料。根据蚀刻选择性，形成具有倾斜侧壁的透镜形状。透镜开口可以被透镜材料填充以形成透镜。

2. 发明申请

US20060197438A1 Nanotip electrode electroluminescence device with contoured phosphor layer 失效
公开(公告)号：US20060197438A1
公开(公告)日：2006-09-07
申请号：US11070051
申请日：2005-03-01
申请人： John Conley , David Evans , Wei Gao , Yoshi Ono
发明人： John Conley , David Evans , Wei Gao , Yoshi Ono
IPC分类号： H05B33/14 , H05B33/00 , H01L51/50 , H01L51/56
CPC分类号： H05B33/10 , B82Y20/00 , C09K11/54 , C09K11/642 , H01L33/18 , H05B33/14
摘要： A device and a fabrication method are provided for an EL device with a nanotip-contoured phosphor layer. The method comprises: forming a bottom electrode with nanotips; forming a phosphor layer overlying the bottom electrode, having irregularly-shaped top and bottom surfaces; and, forming a top electrode overlying the phosphor layer. The bottom electrode top surface has a nanotip contour, and the phosphor layer irregularly-shaped top and bottom surfaces have contours approximately matching the bottom electrode top surface nanotip contour. In one aspect, a contoured bottom dielectric is interposed between the bottom electrode and the phosphor layer, having top and bottoms surfaces with contours approximately matching the nanotip contour. Likewise, a top dielectric may be interposed between the top electrode and the phosphor layer, having a bottom surface with a contour approximately matching the contour of phosphor layer top surface.

3. 发明申请

US20060073623A1 METHODS OF FORMING A MICROLENS ARRAY OVER A SUBSTRATE EMPLOYING A CMP STOP 失效
标题翻译：在使用CMP停止的基板上形成微阵列的方法
公开(公告)号：US20060073623A1
公开(公告)日：2006-04-06
申请号：US10956789
申请日：2004-09-30
申请人： John Conley , Yoshi Ono , Wei Gao , David Evans
发明人： John Conley , Yoshi Ono , Wei Gao , David Evans
IPC分类号： H01L21/00
CPC分类号： H01L21/31053 , H01L21/31133 , H01L27/14627 , H01L27/14685
摘要： A method of forming a microlens structure is provided along with a CCD array structure employing a microlens array. An embodiment of the method comprises providing a substrate having a surface with photo-elements on the surface; depositing a transparent material overlying the surface of the substrate; depositing a CMP stop overlying the transparent material; depositing a lens-shaping layer overlying the CMP stop layer; depositing and patterning a photoresist layer overlying the lens-shaping layer to form openings to expose the lens-shaping layer; introducing a first isotropic etchant into the openings and etching the lens-shaping layer where exposed to form initial lens shapes having a radius; stripping the photoresist; exposing the lens-shaping layer to a second isotropic etchant to increase the radius of the lens shapes; transferring the lens shape through the CMP stop layer into the transparent material using an anisotropic etch; and depositing a lens material overlying the transparent material, whereby the lens shapes are at least partially filled with lens material. Planarizing the lens material using CMP and stopping at the CMP stop layer.
摘要翻译：提供一种形成微透镜结构的方法以及采用微透镜阵列的CCD阵列结构。该方法的一个实施例包括提供具有在表面上具有光元件的表面的基底; 沉积覆盖衬底表面的透明材料; 沉积覆盖透明材料的CMP停止点; 沉积覆盖CMP停止层的透镜成形层; 沉积和图案化覆盖透镜成形层的光致抗蚀剂层以形成露出透镜成形层的开口; 在开口中引入第一各向同性蚀刻剂并蚀刻暴露于其中形成具有半径的初始透镜形状的透镜成形层; 剥离光刻胶; 将透镜成形层暴露于第二各向同性蚀刻剂以增加透镜形状的半径; 使用各向异性蚀刻将透镜形状通过CMP停止层转移到透明材料中; 以及沉积覆盖透明材料的透镜材料，由此透镜形状至少部分地被透镜材料填充。使用CMP对透镜材料进行平面化，并在CMP停止层处停止。

4. 发明申请

US20050253136A1 Electroluminescent device 失效
标题翻译：电致发光器件
公开(公告)号：US20050253136A1
公开(公告)日：2005-11-17
申请号：US10836669
申请日：2004-04-30
申请人： Yoshi Ono , Wei Gao , John Conley , Osamu Nishio , Keizo Sakiyama
发明人： Yoshi Ono , Wei Gao , John Conley , Osamu Nishio , Keizo Sakiyama
IPC分类号： G09F9/30 , G09F9/00 , H01L27/32 , H01L29/08 , H01L33/18 , H01L33/28 , H01L33/34 , H01L35/24
CPC分类号： H01L33/28 , H01L33/18 , H01L33/34 , Y10S977/95
摘要： A method is provided for forming an electroluminescent device. The method comprises: providing a type IV semiconductor material substrate; forming a p+/n+ junction in the substrate, typically a plurality of interleaved p+/n+ junctions are formed; and, forming an electroluminescent layer overlying the p+/n+ junction(s) in the substrate. The type IV semiconductor material substrate can be Si, C, Ge, SiGe, or SiC. For example, the substrate can be Si on insulator (SOI), bulk Si, Si on glass, or Si on plastic. The electroluminescent layer can be a material such as nanocrystalline Si, nanocrystalline Ge, fluorescent polymers, or type II-VI materials such as ZnO, ZnS, ZnSe, CdSe, and CdS. In some aspect, the method further comprises forming an insulator film interposed between the substrate and the electroluminescent layer. In another aspect, the method comprises forming a conductive electrode overlying the electroluminescent layer.
摘要翻译：提供了形成电致发光器件的方法。该方法包括：提供IV型半导体材料基板; 在衬底中形成p + / n +结，通常形成多个交错的p + / n +结; 并且形成覆盖衬底中的p + / n +结的电致发光层。 IV型半导体材料基板可以是Si，C，Ge，SiGe或SiC。例如，衬底可以是绝缘体上的Si（SOI），玻璃上的体积Si，Si或塑料上的Si。电致发光层可以是诸如纳米晶体Si，纳米晶体Ge，荧光聚合物或诸如ZnO，ZnS，ZnSe，CdSe和CdS的II-VI族材料的材料。在一些方面，所述方法还包括形成介于基片和电致发光层之间的绝缘膜。另一方面，该方法包括形成覆盖电致发光层的导电电极。

5. 发明申请

US20050208432A1 Methods of forming a microlens array over a substrate 审中-公开
标题翻译：在衬底上形成微透镜阵列的方法
公开(公告)号：US20050208432A1
公开(公告)日：2005-09-22
申请号：US10805115
申请日：2004-03-19
申请人： John Conley , Yoshi Ono , Wei Gao
发明人： John Conley , Yoshi Ono , Wei Gao
IPC分类号： G02B3/00 , H01L27/14 , H04N1/028
CPC分类号： H01L27/14685 , G02B3/0012 , H01L27/14627
摘要： A method of forming a microlens structure is provided along with a CCD array structure employing a microlens array. An embodiment of the method comprises providing a substrate having a surface with photo-elements on the surface; depositing a transparent material overlying the surface of the substrate; depositing and patterning a photoresist layer overlying the transparent material to form openings to expose the transparent material; introducing a first isotropic etchant into the openings and etching the transparent material where exposed to form initial lens shapes having a radius; stripping the photoresist; exposing the transparent material to a second isotropic etchant to increase the radius of the lens shapes; and depositing a lens material overlying the transparent material, whereby the lens shapes are at least partially filled with lens material. An embodiment of the CCD array comprises an array of CCD pixels on a substrate; and a lens array in contact with the array of CCD pixels; wherein the lens array comprises a transparent material having concave indentations, and a lens material at least partially filling the concave indentations forming a plano-convex lens in contact with the transparent material.
摘要翻译：提供一种形成微透镜结构的方法以及采用微透镜阵列的CCD阵列结构。该方法的一个实施例包括提供具有在表面上具有光元件的表面的基底; 沉积覆盖衬底表面的透明材料; 沉积和图案化覆盖透明材料的光致抗蚀剂层以形成露出透明材料的开口; 在开口中引入第一各向同性蚀刻剂并蚀刻暴露以形成具有半径的初始透镜形状的透明材料; 剥离光刻胶; 将透明材料暴露于第二各向同性蚀刻剂以增加透镜形状的半径; 以及沉积覆盖透明材料的透镜材料，由此透镜形状至少部分地被透镜材料填充。 CCD阵列的一个实施例包括衬底上的CCD像素阵列; 以及与CCD像素阵列接触的透镜阵列; 其中所述透镜阵列包括具有凹陷痕的透明材料，以及透镜材料，其至少部分地填充形成与所述透明材料接触的平凸透镜的所述凹陷痕。

6. 发明申请

US20060240588A1 Method to fabricate a nanowire CHEMFET sensor device using selective nanowire deposition 失效
标题翻译：使用选择性纳米线沉积制造纳米线CHEMFET传感器器件的方法
公开(公告)号：US20060240588A1
公开(公告)日：2006-10-26
申请号：US11115814
申请日：2005-04-26
申请人： John Conley , Yoshi Ono , Lisa Stecker
发明人： John Conley , Yoshi Ono , Lisa Stecker
IPC分类号： H01L21/00
CPC分类号： G01N27/4146 , B82Y10/00 , B82Y15/00 , G11C2213/16 , H01L51/0048 , H01L51/0545
摘要： A method of fabricating a nanowire CHEMFET sensor mechanism includes preparing a silicon substrate; depositing a polycrystalline ZnO seed layer on the silicon substrate; patterning and etching the polycrystalline ZnO seed layer; depositing an insulating layer over the polycrystalline ZnO seed layer and the silicon substrate; patterning and etching the insulating layer to form contact holes to a source region and a drain region; metallizing the contact holes to form contacts for the source region and the drain region; depositing a passivation dielectric layer over the insulating layer and the contacts; patterning the passivation layer and etching to expose the polycrystalline ZnO seed layer between the source region and the drain region; and growing ZnO nanostructures on the exposed ZnO seed layer to form a ZnO nanostructure CHEMFET sensor device.
摘要翻译：制造纳米线CHEMFET传感器机构的方法包括制备硅衬底; 在硅衬底上沉积多晶ZnO种子层; 图案化和蚀刻多晶ZnO种子层; 在多晶ZnO种子层和硅衬底上沉积绝缘层; 图案化和蚀刻绝缘层以形成到源极区域和漏极区域的接触孔; 金属化接触孔以形成用于源极区域和漏极区域的触点; 在所述绝缘层和所述触点上沉积钝化介电层; 图案化钝化层并蚀刻以在源极区域和漏极区域之间暴露多晶ZnO晶种层; 并在曝光的ZnO种子层上生长ZnO纳米结构以形成ZnO纳米结构CHEMFET传感器装置。

7. 发明申请

US20060197436A1 ZnO nanotip electrode electroluminescence device on silicon substrate 审中-公开
标题翻译： ZnO纳米尖电极电致发光器件在硅衬底上
公开(公告)号：US20060197436A1
公开(公告)日：2006-09-07
申请号：US11240970
申请日：2005-09-30
申请人： John Conley , Yoshi Ono
发明人： John Conley , Yoshi Ono
IPC分类号： H01L51/00 , H05B33/00
CPC分类号： C09K11/54 , B82Y20/00 , C09K11/642 , H01L33/18 , H05B33/10 , H05B33/14
摘要： A device and a fabrication method are provided for a ZnO nanotip electroluminescence (EL) device on a silicon (Si) substrate. The method includes: forming a Si substrate; forming a bottom contact overlying the Si substrate; forming a seed layer overlying the bottom contact; forming ZnO nanotips with tops, overlying the seed layer; forming an insulating film overlying the ZnO nanotips; etching the insulating film; exposing the ZnO nanotip tops; and, forming a transparent top electrode overlying the exposed ZnO nanotip tops. In one aspect, after forming the ZnO nanotips, an ALD process can be used to coat the ZnO nanotips with a material such as Al2O3 or HfO2. The seed layer can be ZnO or ZnO:Al, formed using a deposition process such as sputtering, chemical vapor deposition (CVD), spin-on, or atomic layer deposition (ALD).
摘要翻译：提供了一种在硅（Si）衬底上的ZnO纳米管电致发光（EL）器件的器件和制造方法。该方法包括：形成Si衬底; 形成覆盖Si衬底的底部接触; 形成覆盖底部接触的种子层; 用顶部形成ZnO纳米片，覆盖种子层; 形成覆盖ZnO纳米尖端的绝缘膜; 蚀刻绝缘膜; 暴露ZnO纳米尖顶; 并且形成覆盖曝光的ZnO纳米尖顶部的透明顶部电极。在一个方面，在形成ZnO纳米片之后，可以使用ALD工艺来用诸如Al 2 O 3 3或HfO 2的材料涂覆ZnO纳米片。种子层可以是使用沉积工艺如溅射，化学气相沉积（CVD），旋涂或原子层沉积（ALD）形成的ZnO或ZnO：Al。

8. 发明申请

US20070193974A1 Method to manipulate selectivity of a metal oxide sensor 失效
标题翻译：操纵金属氧化物传感器选择性的方法
公开(公告)号：US20070193974A1
公开(公告)日：2007-08-23
申请号：US11361519
申请日：2006-02-23
申请人： John Conley , Yoshi Ono
发明人： John Conley , Yoshi Ono
IPC分类号： C03C25/68 , B44C1/22
CPC分类号： G01N33/0027
摘要： A method of selectively enhancing the sensitivity of a metal oxide sensor includes fabricating a ZnO sensor having a ZnO sensor element therein; and exposing the ZnO sensor element to a plasma stream.
摘要翻译：选择性提高金属氧化物传感器的灵敏度的方法包括制造其中具有ZnO传感器元件的ZnO传感器; 并将ZnO传感器元件暴露于等离子体流。

9. 发明申请

US20060281321A1 Nanowire sensor device structures 审中-公开
标题翻译：纳米线传感器装置结构
公开(公告)号：US20060281321A1
公开(公告)日：2006-12-14
申请号：US11152289
申请日：2005-06-13
申请人： John Conley , Yoshi Ono , Lisa Stecker
发明人： John Conley , Yoshi Ono , Lisa Stecker
IPC分类号： H01L21/311
CPC分类号： B81C1/00182 , B81B2201/0214 , B82Y10/00 , H01L29/0673 , H01L29/0676 , H01L29/775
摘要： A method of fabricating a nanowire sensor device structure includes preparing a substrate, having a silicon base layer, a buried oxide layer in the silicon base layer, a top silicon layer on the buried oxide layer, and a doped well in the silicon base layer; forming a silicon island from the top silicon layer; etching the buried oxide layer to undercut the silicon island in some instances; depositing a seed layer of polycrystalline ZnO over the silicon island, the buried oxide layer, the doped well and the silicon base layer; selectively removing the polycrystalline ZnO from the silicon island; growing and structuring ZnO nanostructures on the seed layer of ZnO; treating the ZnO nanostructures to sensitize the ZnO nanostructures to a desired application; depositing a layer of insulating material; patterning and etching the insulating material; and metallizing the nanowire device structure.
摘要翻译：制造纳米线传感器器件结构的方法包括制备具有硅基底层，硅基底层中的掩埋氧化物层，掩埋氧化物层上的顶部硅层和硅基底层中的掺杂阱的衬底; 从顶层硅层形成硅岛; 在一些情况下蚀刻掩埋氧化物层以切割硅岛; 在硅岛，掩埋氧化物层，掺杂阱和硅基层上沉积多晶ZnO晶种层; 从硅岛选择性去除多晶ZnO; 在ZnO的种子层上生长和构造ZnO纳米结构; 处理ZnO纳米结构以使ZnO纳米结构对所需的应用敏化; 沉积一层绝缘材料; 图案化和蚀刻绝缘材料; 并且对纳米线器件结构进行金属化。

10. 发明申请

US20060240662A1 Method to perform selective atomic layer deposition of zinc oxide 有权
标题翻译：执行氧化锌选择性原子层沉积的方法
公开(公告)号：US20060240662A1
公开(公告)日：2006-10-26
申请号：US11114862
申请日：2005-04-25
申请人： John Conley , Yoshi Ono , David Evans
发明人： John Conley , Yoshi Ono , David Evans
IPC分类号： H01L21/4763 , H01L21/31 , H01L21/469
CPC分类号： H01L21/0228 , C23C16/042 , C23C16/407 , C23C16/45525 , H01L21/0217 , H01L21/02175 , H01L21/02334 , H01L21/0234 , H01L21/3141
摘要： A method for selective ALD of ZnO on a wafer preparing a silicon wafer; patterning the silicon wafer with a blocking agent in selected regions where deposition of ZnO is to be inhibited, wherein the blocking agent is taken from a group of blocking agents includes isopropyl alcohol, acetone and deionized water; depositing a layer of ZnO on the wafer by ALD using diethyl zinc and H2O at a temperature of between about 140° C. to 170° C.; and removing the blocking agent from the wafer.
摘要翻译：在准备硅晶片的晶片上的ZnO的选择性ALD的方法; 在其中要抑制ZnO沉积的选定区域中用封闭剂对硅晶片进行图案化，其中封闭剂取自一组封闭剂，包括异丙醇，丙酮和去离子水; 在约140℃至170℃的温度下，使用二乙基锌和H 2 O 2，通过ALD在晶片上沉积ZnO层。并从晶片上除去封闭剂。

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