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1. 发明专利

JP2013089828A Semiconductor module 有权
标题翻译：半导体模块
公开(公告)号：JP2013089828A
公开(公告)日：2013-05-13
申请号：JP2011230395
申请日：2011-10-20
申请人： Toyota Central R&D Labs Inc , 株式会社豊田中央研究所 , Toyota Motor Corp , トヨタ自動車株式会社
发明人： SHOJI TOMOYUKI , OSADA YUJI , USUI MASANORI , NISHIBE YUJI , IMAI MAKOTO , TANIDA ATSUSHI , ATSUMI TAKASHI , FURUTA NORIBUMI
IPC分类号： H01L25/07 , H01L25/18
CPC分类号： H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor module having a simple configuration.SOLUTION: A semiconductor module 10 comprises a first structure 10Ua and a second structure 10Ub. The first structure 10Ua and the second structure 10Ub have common configurations. A first output bus bar Uout1 of the first structure 10Ua and a high-voltage-side bus bar 10P of the second structure 10Ub have common configurations. A low-voltage-side bus bar 10N of the first structure 10Ua and a second output bus bar Uout2 of the second structure 10Ub have common configurations.
摘要翻译：要解决的问题：提供具有简单配置的半导体模块。解决方案：半导体模块10包括第一结构10Ua和第二结构10Ub。第一结构10Ua和第二结构10Ub具有共同的结构。第一结构10Ua的第一输出汇流条Uout1和第二结构10Ub的高压侧汇流条10P具有共同的结构。第一结构10Ua的低压侧母线10N和第二结构10Ub的第二输出母线Uout2具有共同的结构。版权所有（C）2013，JPO＆INPIT

2. 发明专利

JP2013251472A Heat transfer member and module comprising the same 有权
标题翻译：传热部件和包含其的模块
公开(公告)号：JP2013251472A
公开(公告)日：2013-12-12
申请号：JP2012126705
申请日：2012-06-04
申请人： Toyota Central R&D Labs Inc , 株式会社豊田中央研究所 , Toyota Motor Corp , トヨタ自動車株式会社
发明人： ASADA TAKASHI , USUI MASANORI , SHOJI TOMOYUKI , IMAI MAKOTO , TANIDA ATSUSHI
IPC分类号： H01L23/36 , H01L21/60 , H01L23/34 , H01L23/48
CPC分类号： H01L23/49568 , H01L23/36 , H01L23/3735 , H01L23/473 , H01L23/492 , H01L24/29 , H01L24/33 , H01L2224/29111 , H01L2924/0132 , H01L2924/0133 , H01L2924/10253 , H01L2924/10272 , H01L2924/1301 , H01L2924/13055 , H01L2924/13064 , H01L2924/13091 , H01L2924/00 , H01L2924/01029 , H01L2924/0105 , H01L2924/01047
摘要： PROBLEM TO BE SOLVED: To provide a heat transfer member capable of suppressing a gap in thermal expansion between the heat transfer member and a semiconductor element, and having a high heat radiation effect as well.SOLUTION: A heat transfer member 40 is provided between a semiconductor element 30 and an electrode plate 50. The heat transfer member 40 comprises a metal part 42 extending between a first surface 40A on a side of the semiconductor element 30 and a second surface 40B on a side of the electrode plate 50, and a ceramic part 44 surrounding the metal part 42. In the metal part 42, an area of the first surface 40A is smaller than an area of the second surface 40B.
摘要翻译：要解决的问题：提供能够抑制传热构件和半导体元件之间的热膨胀间隙并且具有高散热效果的传热构件。解决方案：传热构件40设置在半导体元件30和电极板50.传热构件40包括在半导体元件30的一侧的第一表面40A和在电极板50的侧面上的第二表面40B之间延伸的金属部分42，以及陶瓷围绕金属部分42的部分44.在金属部分42中，第一表面40A的区域小于第二表面40B的面积。

3. 发明专利

JP2011210947A Insulating substrate and module with the insulating substrate 有权
标题翻译：用绝缘基板绝缘基板和模块
公开(公告)号：JP2011210947A
公开(公告)日：2011-10-20
申请号：JP2010077079
申请日：2010-03-30
申请人： Toyota Central R&D Labs Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社豊田中央研究所
发明人： USUI MASANORI , YAGI YUJI , SHOJI TOMOYUKI , SUZUKI TOMOKIYO
IPC分类号： H05K1/02
CPC分类号： H01L2224/32225
摘要： PROBLEM TO BE SOLVED: To provide an insulating substrate that passes both a cooling cycle test and a power cycle test.SOLUTION: The insulating substrate 30 is provided between a radiator 20 and a semiconductor device 50. The insulating substrate 30 includes a first wiring layer 31, a ceramic insulating layer 32 and a second wiring layer 33. The first wiring layer 31 is brazed to the radiator 20, and 0.2% proof stress has a first value. The second wiring layer 33 is soldered to the semiconductor device 50, and 0.2% proof stress has a second value. The first value of the first wiring layer 31 is smaller than the second value of the second wiring layer 33.
摘要翻译：要解决的问题：提供通过冷却循环试验和动力循环试验的绝缘基板。解决方案：绝缘基板30设置在散热器20和半导体装置50之间。绝缘基板30包括第一布线层 31是陶瓷绝缘层32和第二布线层33.第一布线层31钎焊到散热器20，0.2％的弹性应力具有第一值。第二布线层33被焊接到半导体器件50，并且0.2％的抗原应力具有第二值。第一布线层31的第一值小于第二布线层33的第二值。

4. 发明专利

JP2008258550A Igbt simulation system and igbt simulation program 有权
标题翻译： IGBT仿真系统和IGBT仿真程序
公开(公告)号：JP2008258550A
公开(公告)日：2008-10-23
申请号：JP2007102217
申请日：2007-04-09
申请人： Hiroshima Univ , Toyota Central R&D Labs Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 国立大学法人広島大学 , 株式会社豊田中央研究所
发明人： EZAKI TATSUYA , OHASHI AKIO , MIURA MICHIKO , MIYAKE MASAAKI , YOKOMICHI MASAHIRO , SHOJI TOMOYUKI , KOJIMA TAKASHI , NISHIBE YUJI , UEDA KENJI
IPC分类号： H01L21/336 , H01L29/00 , H01L29/739 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To simulate the operation of IGBT with high precision.
SOLUTION: Currents I
E , I
C , and I
Drain of IGBT are represented using a potential difference V
EB at a junction part between an internal P+ (emitter) region 20 and an N (base) region 18, and are determined with Kirchhoff principle I
E =I
C +I
Drain about the current in the IGBT. Using the determined V
EB , the currents I
E , I
C , and I
Drain are acquired. A transitional current is determined based on the change amount of internal accumulated charges.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：高精度地模拟IGBT的工作。使用电位差V SB表示IGBT的电流I C ，I C 和I 漏极 / SB>在内部P +（发射极）区域20和N（基底）区域18之间的连接部分处，并且由基尔霍夫原理I确定。 + I 漏极关于IGBT中的电流。使用确定的V EB ，获得电流I C 和I 漏极。过渡电流根据内部累积费用的变化量确定。版权所有（C）2009，JPO＆INPIT

5. 发明专利

JP2014216543A 半導体モジュール有权
标题翻译：半导体模块
公开(公告)号：JP2014216543A
公开(公告)日：2014-11-17
申请号：JP2013093978
申请日：2013-04-26
申请人：株式会社豊田中央研究所 , Toyota Central R&D Labs Inc , トヨタ自動車株式会社 , Toyota Motor Corp
发明人： SHOJI TOMOYUKI , OSADA YUJI , USUI MASANORI , IMAI MAKOTO , ORIMOTO NORIMUNE
IPC分类号： H01L23/34 , H01L25/07 , H01L25/18
CPC分类号： H01L23/34 , H01L25/04
摘要：【課題】半導体素子と配線層が圧接固定される圧接型の半導体モジュールにおいて、半導体素子が動作したときの温度分布に起因して半導体素子に加わる応力を緩和する技術を提供すること。【解決手段】圧接型の半導体モジュール1は、半導体素子4と配線層6の間に設けられており、圧接方向に直交する面内に配置されている複数の弾性機構10を備えている。弾性機構10は、半導体素子4に接触する導電性の接触体12、及び接触体12を半導体素子4に向けて付勢する弾性体14を有している。半導体素子4と配線層6は、接触体12を介して電気的に接続可能に構成されている。【選択図】図2
摘要翻译：要解决的问题：为了提供一种在半导体元件和半导体元件工作时由于温度分布而施加到半导体元件上的应力的技术，其中半导体元件和布线层是固定的压力压焊型半导体模块1包括设置在半导体元件4和布线层6之间的多个弹性机构10，并且设置在垂直于压接方向的平面中。弹性机构10包括：与半导体元件4接触的导电接触体12; 以及将接触体12朝向半导体元件4偏压的弹性体14.半导体元件4和布线层6通过接触体12形成为彼此电连接。

6. 发明专利

JP2012160548A Insulation substrate, and power module having insulation substrate 审中-公开
标题翻译：绝缘衬底和具有绝缘衬底的电源模块
公开(公告)号：JP2012160548A
公开(公告)日：2012-08-23
申请号：JP2011018624
申请日：2011-01-31
申请人： Toyota Central R&D Labs Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社豊田中央研究所
发明人： USUI MASANORI , YAGI YUJI , SHOJI TOMOYUKI , ASADA TAKASHI , SUZUKI TOMOKIYO
IPC分类号： H01L23/36
CPC分类号： H01L2224/32225
摘要： PROBLEM TO BE SOLVED: To provide an insulation substrate capable of satisfying both of a cold heat cycle test and a power cycle test.SOLUTION: An insulation substrate 50 comprises a first wiring layer 52, an insulation layer 54, and a second wiring layer 56. The first wiring layer 52 is constituted with one or more layers. The second wiring layer 56 is constituted with one or more layers. Total sum of 0.2% strength and thickness of each of the one or more layers constituting the first wiring layer 52 is smaller than total sum of 0.2% strength and thickness of each of the one or more layers constituting the second wiring layer 56. Thereby, the insulation substrate 50 is warped into a convex shape toward a radiator 30.
摘要翻译：要解决的问题：提供能够满足冷热循环试验和动力循环试验两者的绝缘基板。解决方案：绝缘基板50包括第一布线层52，绝缘层54和第二布线层56.第一布线层52由一层或多层构成。第二布线层56由一层或多层构成。构成第一布线层52的一个或多个层中的每一个的强度和厚度的0.2％的总和小于构成第二布线层56的一个或多个层中的每一个的强度的0.2％和厚度的总和。因此，绝缘基板50朝向散热器30翘曲成凸形。版权所有（C）2012，JPO＆INPIT

7. 发明专利

JP2011159662A Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：JP2011159662A
公开(公告)日：2011-08-18
申请号：JP2010017870
申请日：2010-01-29
申请人： Toyota Central R&D Labs Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社豊田中央研究所
发明人： SHOJI TOMOYUKI , YAGI YUJI , ASADA TAKASHI , OSADA YUJI , SUZUKI TOMOKIYO
IPC分类号： H01L23/36
CPC分类号： H01L24/33 , H01L2224/32225 , H01L2924/13055 , H01L2924/13091 , H01L2924/181 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device capable of dissipating heat generated by a semiconductor element through a substrate and more properly inhibiting deterioration of a junction between the semiconductor element and the substrate. SOLUTION: The semiconductor device 10 includes the semiconductor element 11, the junction 12, and a heat sink 15 laminated in order. A direction in which the semiconductor element 11 and the heat sink 15 are laminated is assumed as a thickness direction, and a direction along a plane perpendicular to the thickness direction is assumed as a plane direction. The heat sink 15 includes: a first embedded portion 16 formed in a central region corresponding to a laminate range of the semiconductor element 11, the heat sink having a thermal conductivity in the thickness direction higher than the thermal conductivity in the plane direction and the thermal conductivity of a base material of the heat sink 15; and a second embedded portion 17 formed in a peripheral region, the second embedded portion having a linear expansion coefficient in the plane direction smaller than the linear expansion coefficient in the plane direction of the first embedded portion 16 and the linear expansion coefficient of the base material of the heat sink 15 and having a rigidity in the plane direction higher than the rigidity in the plane direction of the first embedded portion 16 and the rigidity of the base material of the heat sink 15. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：解决的问题：提供一种半导体器件，其能够通过衬底散发由半导体元件产生的热量，并且更适当地抑制半导体元件和衬底之间的接合的劣化。解决方案：半导体器件10包括依次层叠的半导体元件11，接合部12和散热片15。将半导体元件11和散热片15层叠的方向作为厚度方向，将与厚度方向垂直的面的方向作为平面方向。散热器15包括：形成在对应于半导体元件11的层叠范围的中心区域中的第一嵌入部分16，散热器在厚度方向上的热传导率高于平面方向上的热导率，热量散热片15的基材的导电性; 以及形成在周边区域中的第二嵌入部分17，第二嵌入部分在平面方向上具有小于第一嵌入部分16的平面方向上的线膨胀系数的线膨胀系数和基材的线膨胀系数并且具有比第一嵌入部16的平面方向的刚性高的平面方向的刚性和散热片15的基材的刚性。（C）2011年， JPO＆INPIT

8. 发明专利

JP2014135410A Cooling type switching element module 有权
标题翻译：冷却式开关元件模块
公开(公告)号：JP2014135410A
公开(公告)日：2014-07-24
申请号：JP2013003121
申请日：2013-01-11
申请人： Toyota Central R&D Labs Inc , 株式会社豊田中央研究所 , Toyota Motor Corp , トヨタ自動車株式会社
发明人： OSADA YUJI , USUI MASANORI , SUGIYAMA TAKAHIDE , SHOJI TOMOYUKI , HIROSE SATOSHI , IMAI MAKOTO , ORIMOTO NORIMUNE
IPC分类号： H01L23/473 , H01L25/07 , H01L25/18 , H02M7/48 , H05K7/20
CPC分类号： H05K7/20927 , H01L24/34 , H01L24/37 , H01L24/40 , H01L2224/371 , H01L2224/37599 , H01L2224/40137 , H01L2924/1305 , H01L2924/13055 , H01L2924/181 , H01L2924/00 , H01L2924/00014
摘要： PROBLEM TO BE SOLVED: To improve cooling performance and electrical performance and achieve downsizing in a switching element module having a cooling function.SOLUTION: A cooling type switching element module 1 includes: an outer conductor cylinder 24; an inner conductor cylinder 26 which transmits electric power with the outer conductor cylinder 24; first switching elements (32U, 32V, 32W); and second switching elements (36U, 36V, 36W). The inner conductor cylinder 26 has a protruding portion which protrudes from an opening of the outer conductor cylinder 24. The first switching elements are provided on an outer surface of the outer conductor cylinder 24 and the second switching elements are provided on an outer surface of the protruding portion. A refrigerant circulates at the inner side of the inner conductor cylinder 26 and the outer side of the outer conductor cylinder 24. The first switching elements and the second switching elements are cooled from both sides by the refrigerant circulating at the inner side of the inner conductor cylinder 26 and the refrigerant circulating at the outer side of the outer conductor cylinder 24.
摘要翻译：要解决的问题：提高冷却性能和电气性能，并实现具有冷却功能的开关元件模块的小型化。解决方案：冷却型开关元件模块1包括：外导体筒24; 与外部导体筒24发送电力的内部导体筒26; 第一开关元件（32U，32V，32W）; 和第二开关元件（36U，36V，36W）。内导体筒26具有从外导体筒24的开口突出的突出部。第一开关元件设置在外导体筒24的外表面上，第二开关元件设置在外导体筒24的外表面上。突出部分。制冷剂在内导体筒26的内侧和外导体筒24的外侧循环。第一开关元件和第二开关元件由内侧导体的内侧循环的制冷剂从两侧冷却气缸26和在外导体筒24的外侧循环的制冷剂。

9. 发明专利

JP2013179743A Component for inverter 有权
标题翻译：逆变器组件
公开(公告)号：JP2013179743A
公开(公告)日：2013-09-09
申请号：JP2012041425
申请日：2012-02-28
申请人： Toyota Central R&D Labs Inc , 株式会社豊田中央研究所 , Toyota Motor Corp , トヨタ自動車株式会社
发明人： USUI MASANORI , OSADA YUJI , SHOJI TOMOYUKI , IMAI MAKOTO , TANIDA ATSUSHI
IPC分类号： H02M7/48 , H01L25/07 , H01L25/18
摘要： PROBLEM TO BE SOLVED: To provide a component in which a load is applied to a switching element and a bus bar to tightly adhere both with each other, and that configures a circuit for a single-phase of an inverter.SOLUTION: An inverter component comprises a tube 4, an upper stage module 20a, a lower stage module 20b, a positive electrode bus bar 12a, a negative electrode bus bar 26b, intermediate bus bars 26a and 12b, and a pressure member 6. A through-hole through which the positive electrode bus bar passes, a through-hole through which the negative electrode bus bar passes, and through-holes through which the intermediate bus bars pass, are formed on a side wall of the tube. The upper stage module and the lower stage module are inserted into the tube. The pressure member is fixed to the tube at a position where the pressure member is inserted into the tube from a shaft center direction of the tube. By means of the pressure member, a positive electrode and the positive electrode bus bar are tightly adhered with each other, an upper stage side intermediate electrode and the intermediate bus bar are tightly adhered with each other, a lower stage side intermediate electrode and the intermediate bus bar are tightly adhered with each other, and a negative electrode and the negative electrode bus bar are tightly adhered with each other. When the pressure member is removed, the upper stage module, the lower stage module, the positive electrode bus bar, the negative electrode bus bar, and the intermediate bus bar are separated.
摘要翻译：要解决的问题：提供一种对开关元件和母线施加负载以紧密地彼此粘附的部件，并且构成用于逆变器的单相的电路。解决方案：逆变器部件包括管4，上段模块20a，下段模块20b，正极母线12a，负极母线26b，中间母线26a和12b以及压力构件6。正极母线通过，负极母线通过的通孔和中间母线通过的通孔形成在管的侧壁上。上级模块和下级模块插入管中。压力构件在从管的轴心方向将压力构件插入管的位置处固定在管上。通过压力部件，正极和正极母线彼此紧密地粘合，上侧侧中间电极和中间母线彼此紧密地粘合，下侧侧中间电极和中间电极母线母线彼此紧密粘合，并且负极和负极母线彼此紧密地粘合。当去除压力构件时，分离上级模块，下级模块，正极母线，负极汇流条和中间母线。

10. 发明专利

JP2009152465A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2009152465A
公开(公告)日：2009-07-09
申请号：JP2007330404
申请日：2007-12-21
申请人： Toyota Central R&D Labs Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社豊田中央研究所
发明人： SHOJI TOMOYUKI , NISHIDA SHUICHI , ONISHI TOYOKAZU
IPC分类号： H01L29/739 , H01L29/12 , H01L29/78
CPC分类号： H01L29/7397 , H01L29/0649 , H01L29/0653 , H01L29/0696 , H01L29/0834 , H01L29/407 , H01L29/7813
摘要： PROBLEM TO BE SOLVED: To provide a technology to reduce the ON resistance (or ON voltage) in a vertical semiconductor device having a carrier shielding layer.
SOLUTION: A semiconductor substrate 20 of the semiconductor device 10 has a channel region 10A and a non-channel region 10B. A body region 25 of the channel region 10A includes an emitter region 26 which is in contact with a side surface of a trench gate 30 and electrically connected to an emitter electrode 28. The body region 25 of the non-channel region 10B includes no emitter region 26. The carrier shielding layer 52 is arranged in the non-channel region 10B and opens at least one part of the channel region 10A.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种降低具有载体屏蔽层的垂直半导体器件中的导通电阻（或导通电压）的技术。解决方案：半导体器件10的半导体衬底20具有沟道区10A和非沟道区10B。沟道区域10A的主体区域25包括与沟槽栅极30的侧表面接触并电连接到发射极电极28的发射极区域26.非沟道区域10B的主体区域25不包括发射极载体屏蔽层52布置在非沟道区域10B中并且打开沟道区域10A的至少一部分。版权所有（C）2009，JPO＆INPIT

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